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Jinbiao Liu

Publications and source records attributed to Jinbiao Liu.

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Scientific Data Skills: Enabling Agent-Ready Scientific Data Services at Scale

Scientific data are increasingly used by AI agents, yet existing dataset representations provide limited support for reliable dataset discovery and interpretation, constraining their effective use in scientific workflows. This limitation arises because agents must search across heterogeneous repositories and reconstruct dataset-specific semantics and operating procedures from documentation designed primarily for human use. To address this limitation, we introduce the Scientific Data Skill (SciDSK), an agent-ready representation that packages dataset-specific knowledge and operational guidance as a reusable agent skill. A SciDSK integrates dataset descriptions, scientific context, file organization, task-specific usage procedures, quality checks, and provenance information while retaining the underlying data in its original repository. We define a structured SciDSK specification and develop a systematic construction pipeline that grounds each SciDSK in authoritative dataset records and associated supporting materials. We further establish the Scientific Data Skill Bank, a unified platform that publishes SciDSK resources across six scientific disciplines and supports package access, persistent identification, and traceability to source datasets. We evaluate SciDSK through a retrieval benchmark for dataset discovery and controlled cases for dataset interpretation. On the query retrieval benchmark, Agent-SciDSK achieves 80.77% Hit@1, exceeding Agent-Raw by 9.62 percentage points. Across controlled interpretation cases, the SciDSK condition satisfies 23 of 24 assessment criteria, compared with 22 under the web-page condition. These results indicate that SciDSK improves how agents locate and understand scientific datasets, providing a stronger foundation for actionable scientific data use.

cs.AI

High Mobility SiGe/Ge 2DHG Heterostructure Quantum Wells for Semiconductor Hole Spin Qubits

Strong spin-orbit coupling and relatively weak hyperfine interactions make germanium hole spin qubits a promising candidate for semiconductor quantum processors. The two-dimensional hole gas structure of strained Ge quantum wells serves as the primary material platform for spin hole qubits.A low disorder material environment is essential for this process. In this work, we fabricated a Ge/SiGe heterojunction with a 60 nm buried quantum well layer on a Si substrate using reduced pressure chemical vapor deposition technology. At a temperature of 16 mK, when the carrier density is 1.87*10^11/cm2, we obtained a mobility as high as 308.64*10^4cm2/Vs. Concurrently, double quantum dot and planar germanium coupling with microwave cavities were also successfully achieved.This fully demonstrates that this structure can be used for the preparation of higher-performance hole spin qubits.

cond-mat.mes-hall

Undoped Strained Ge Quantum Well with Ultrahigh Mobility Grown by Reduce Pressure Chemical Vapor Deposition

We fabricate an undoped Ge quantum well under 30 nm Ge0.8Si0.2 shallow barrier with reverse grading technology. The under barrier is deposited by Ge0.8Si0.2 followed by Ge0.9Si0.1 so that the variation of Ge content forms a sharp interface which can suppress the threading dislocation density penetrating into undoped Ge quantum well. And the Ge0.8Si0.2 barrier introduces enough in-plane parallel strain -0.41% in the Ge quantum well. The heterostructure field-effect transistors with a shallow buried channel get a high two-dimensional hole gas (2DHG) mobility over 2E6 cm2/Vs at a low percolation density of 2.51 E-11 cm2. We also discover a tunable fractional quantum Hall effect at high densities and high magnetic fields. This approach defines strained germanium as providing the material basis for tuning the spin-orbit coupling strength for fast and coherent quantum computation.

cond-mat.mes-hall