arXiv subjects

Jing Guo

Publications and source records attributed to Jing Guo.

At least 145 records · Page 8Linked to original sources

arXiv2018

Performance Assessment of Resonantly Driven Silicon Two-Qubit Quantum Gate

Two-qubit quantum gates play an essential role in quantum computing, whose operation critically depends on the entanglement between two qubits. Resonantly driven controlled-NOT (CNOT) gates based on silicon double quantum dots (DQDs) are studied theoretically. The physical mechanisms for effective gate modulation of the exchange coupling between two qubits are elucidated. Scaling behaviors of the singlet-triplet energy split, gate-switching speed, and gate fidelity are investigated as a function of the quantum dot spacing and modulation gate voltage. It is shown that the entanglement strength and gate-switching speed exponentially depend on the quantum dot spacing. A small spacing of ~10nm can promise a CNOT gate delay of <1 ns and reliable gate switching in the presence of decoherence. The results show promising performance potential of the resonantly driven two-qubit quantum gates based on aggressively scaled silicon DQDs.

cond-mat.mes-hall↗

arXiv2018

Universal superconductivity phase diagram for pressurized tetradymite topological insulators

We show that two different superconducting phases exist at high pressures in the optimized tetradymite topological insulators Bi2Te2Se (BTS) and Bi1.1Sb0.9Te2S (BSTS). The superconducting phases emerge at structural phase transitions, the first at 8.4 GPa for BTS and 12.4 GPa for BSTS, and the second at 13.6 GPa for BTS and 20.4 GPa, for BSTS. Electronic structure calculations show that these phases do not have topological character. Comparison of our results with prior work on Bi2Se3, Bi2Te3 and (Bi,Sb)2(Se,Te)3 allows us to uncover a universal phase diagram for pressure-induced superconductivity in tetradymites, providing a basis for understanding the relationships between topological behavior, crystal structure, and superconductivity for these materials.

cond-mat.supr-con↗

arXiv2018

Independence of topological surface state and bulk conductances in three-dimensional topological insulators

The archetypical 3D topological insulators Bi2Se3, Bi2Te3 and Sb2Te3 commonly exhibit high bulk conductivities, hindering the characterization of the surface state charge transport. The optimally doped topological insulators Bi2Te2Se and Bi2-xSbxTe2S, however, allow for such characterizations to be made. Here we report the first experimental comparison of the topological surface states and bulk conductances of Bi2Te2Se and Bi1.1Sb0.9Te2S, based on temperature-dependent high-pressure measurements. We find that the surface state conductance at low temperatures remains constant in the face of orders of magnitude increase in the bulk state conductance, revealing in a straightforward way that the topological surface states and bulk states are decoupled at low temperatures, consistent with theoretical models, and confirming topological insulators to be an excellent venue for studying charge transport in 2D Dirac electron systems.

cond-mat.str-el↗

arXiv2018

Uplink Coverage Performance of an Underlay Drone Cell for Temporary Events

Using a drone as an aerial base station (ABS) to provide coverage to users on the ground is envisaged as a promising solution for beyond fifth generation (beyond-5G) wireless networks. While the literature to date has examined downlink cellular networks with ABSs, we consider an uplink cellular network with an ABS. Specifically, we analyze the use of an underlay ABS to provide coverage for a temporary event, such as a sporting event or a concert in a stadium. Using stochastic geometry, we derive the analytical expressions for the uplink coverage probability of the terrestrial base station (TBS) and the ABS. The results are expressed in terms of (i) the Laplace transforms of the interference power distribution at the TBS and the ABS and (ii) the distance distribution between the ABS and an independently and uniformly distributed (i.u.d.) ABS-supported user equipment and between the ABS and an i.u.d. TBS-supported user equipment. The accuracy of the analytical results is verified by Monte Carlo simulations. Our results show that varying the ABS height leads to a trade-off between the uplink coverage probability of the TBS and the ABS. In addition, assuming a quality of service of 90% at the TBS, an uplink coverage probability of the ABS of over 85% can be achieved, with the ABS deployed at or below its optimal height of typically between 250-500 m for the considered setup.

cs.IT↗

arXiv2017

Design of Non-orthogonal Multiple Access Enhanced Backscatter Communication

Backscatter communication (BackCom), which allows a backscatter node (BN) to communicate with the reader by modulating and reflecting the incident continuous wave from the reader, is considered as a promising solution to power the future Internet-of-Things. In this paper, we consider a single BackCom system, where multiple BNs are served by a reader. We propose to use the power-domain non-orthogonal multiple access (NOMA), i.e., multiplexing the BNs in different regions or with different backscattered power levels, to enhance the spectrum efficiency of the BackCom system. To better exploit power-domain NOMA, we propose to set the reflection coefficients for multiplexed BNs to be different. Based on this considered model, we develop the reflection coefficient selection criteria. To illustrate the enhanced system with the proposed criteria, we analyze the performance of BackCom system in terms of the average number of bits that can be successfully decoded by the reader for two-node pairing case and the average number of successful BNs for the general multiplexing case. Our results shows that NOMA achieves much better performance gain in the BackCom system as compared to its performance gain in the conventional system, which highlights the importance of applying NOMA to the BackCom system.

cs.IT↗

arXiv2017

Anomalous connection between antiferromagnetic and superconducting phases in pressurized non-centrosymmetric heavy fermion compound CeRhGe3

Unconventional superconductivity frequently emerges as the transition temperature of a magnetic phase, typically antiferromagnetic, is suppressed continuously toward zero temperature. Here, we report contrary behavior in pressurized CeRhGe3, a non-centrosymmetric heavy fermion compound. We find that its pressure-tuned antiferromagnetic transition temperature (TN) appears to avoid a continuous decrease to zero temperature by terminating abruptly above a dome of pressure-induced superconductivity. Near 21.5 GPa, evidence for TN suddenly vanishes, the electrical resistance becomes linear in temperature and the superconducting transition reaches a maximum. In light of X-ray absorption spectroscopy measurements, these characteristics appear to be related to a pressured-induced Ce valence instability, which reveals as a sharp increase in the rate of change of Ce valence with applied pressure.

cond-mat.supr-con↗

arXiv2017

Pressure-induced melting of magnetic order and emergence of new quantum state in alpha-RuCl3

Here we report the observation of pressure-induced melting of antiferromagnetic (AFM) order and emergence of a new quantum state in the honeycomb-lattice halide alpha-RuCl3, a candidate compound in the proximity of quantum spin liquid state. Our high-pressure heat capacity measurements demonstrate that the AFM order smoothly melts away at a critical pressure (Pc) of 0.7 GPa. Intriguingly, the AFM transition temperature displays an increase upon applying pressure below the Pc, in stark contrast to usual phase diagrams, for example in pressurized parent compounds of unconventional superconductors. Furthermore, in the high-pressure phase an unusual steady of magnetoresistance is observed. These observations suggest that the high-pressure phase is in an exotic gapped quantum state which is robust against pressure up to ~140 GPa.

cond-mat.str-el↗

arXiv2017

Zero resistance from one atmosphere to the pressure of earth's outer core in a superconducting high entropy alloy

We report the observation of extraordinarily robust zero-resistance superconductivity in the pressurized (TaNb)0.67(HfZrTi)0.33 high entropy alloy - a new kind of material with a body-centered cubic crystal structure made from five randomly distributed transition metal elements. The transition to superconductivity (TC) increases from an initial temperature of 7.7 K at ambient pressure to 10 K at ~ 60 GPa, and then slowly decreases to 9 K by 190.6 GPa, a pressure that falls within that of the outer core of the earth. We infer that the continuous existence of the zero-resistance superconductivity from one atmosphere up to such a high pressure requires a special combination of electronic and mechanical characteristics. This high entropy alloy superconductor thus may have a bright future for applications under extreme conditions, and also poses a challenge for understanding the underlying quantum physics.

cond-mat.supr-con↗

arXiv2017

Atomically-thin Femtojoule Filamentary Memristor

The morphology and dimension of the conductive filament formed in a memristive device are strongly influenced by the thickness of its switching medium layer. Aggressive scaling of this active layer thickness is critical towards reducing the operating current, voltage and energy consumption in filamentary type memristors. Previously, the thickness of this filament layer has been limited to above a few nanometers due to processing constraints, making it challenging to further suppress the on-state current and the switching voltage. Here, we study the formation of conductive filaments in a material medium with sub-nanometer thickness, formed through the oxidation of atomically-thin two-dimensional boron nitride. The resulting memristive device exhibits sub-nanometer filamentary switching with sub-pA operation current and femtojoule per bit energy consumption. Furthermore, by confining the filament to the atomic scale, we observe current switching characteristics that are distinct from that in thicker medium due to the profoundly different atomic kinetics. The filament morphology in such an aggressively scaled memristive device is also theoretically explored. These ultra-low energy devices are promising for realizing femtojoule and sub-femtojoule electronic computation, which can be attractive for applications in a wide range of electronics systems that desire ultra-low power operation.

physics.app-ph↗

arXiv2017

Power Beacon-Assisted Millimeter Wave Ad Hoc Networks

Deployment of low cost power beacons (PBs) is a promising solution for dedicated wireless power transfer (WPT) in future wireless networks. In this paper, we present a tractable model for PB-assisted millimeter wave (mmWave) wireless ad hoc networks, where each transmitter (TX) harvests energy from all PBs and then uses the harvested energy to transmit information to its desired receiver. Our model accounts for realistic aspects of WPT and mmWave transmissions, such as power circuit activation threshold, allowed maximum harvested power, maximum transmit power, beamforming and blockage. Using stochastic geometry, we obtain the Laplace transform of the aggregate received power at the TX to calculate the power coverage probability. We approximate and discretize the transmit power of each TX into a finite number of discrete power levels in log scale to compute the channel and total coverage probability. We compare our analytical predictions to simulations and observe good accuracy. The proposed model allows insights into effect of system parameters, such as transmit power of PBs, PB density, main lobe beam-width and power circuit activation threshold on the overall coverage probability. The results confirm that it is feasible and safe to power TXs in a mmWave ad hoc network using PBs.

cs.IT↗

arXiv2017

Superconductivity in pressurized CeRhGe3 and related non-centrosymmetric compounds

We report the discovery of superconductivity in pressurized CeRhGe3, until now the only remaining non-superconducting member of the isostructural family of non-centrosymmetric heavy-fermion compounds CeTX3 (T = Co, Rh, Ir and X = Si, Ge). Superconductivity appears in CeRhGe3 at a pressure of 19.6 GPa and the transition temperature Tc reaches a maximum value of 1.3 K at 21.5 GPa. This finding provides an opportunity to establish systematic correlations between superconductivity and materials properties within this family. Though ambient-pressure unit-cell volumes and critical pressures for superconductivity vary substantially across the series, all family members reach a maximum Tcmax at a common critical cell volume Vcrit, and Tcmax at Vcrit increases with increasing spin-orbit coupling strength of the d-electrons. These correlations show that substantial Kondo hybridization and spin-orbit coupling favor superconductivity in this family, the latter reflecting the role of broken centro-symmetry.

cond-mat.supr-con↗

arXiv2017

Massive Machine Type Communication with Data Aggregation and Resource Scheduling

To enable massive machine type communication (mMTC), data aggregation is a promising approach to reduce the congestion caused by a massive number of machine type devices (MTDs). In this work, we consider a two-phase cellular-based mMTC network where MTDs transmit to aggregators (i.e., aggregation phase) and the aggregated data is then relayed to base stations (i.e., relaying phase). Due to the limited resources, the aggregators not only aggregate data, but also schedule resources among MTDs. We consider two scheduling schemes: random resource scheduling (RRS) and channel-aware resource scheduling (CRS). By leveraging the stochastic geometry, we present a tractable analytical framework to investigate the signal-to-interference ratio (SIR) for each phase, thereby computing the MTD success probability, the average number of successful MTDs and probability of successful channel utilization, which are the key metrics characterizing the overall mMTC performance. Our numerical results show that, although the CRS outperforms the RRS in terms of SIR at the aggregation phase, the simpler RRS has almost the same performance as the CRS for most cases with regards to the overall mMTC performance. Furthermore, the provision of more resources at the aggregation phase is not always beneficial to the mMTC performance.

cs.IT↗

arXiv2017

Submolecular-resolution non-invasive imaging of interfacial water with atomic force microscopy

Scanning probe microscopy (SPM) has been extensively applied to probe interfacial water in many interdisciplinary fields but the disturbance of the probes on the hydrogen-bonding structure of water has remained an intractable problem. Here we report submolecular-resolution imaging of the water clusters on a NaCl(001) surface within the nearly non-invasive region by a qPlus-based noncontact atomic force microscopy. Comparison with theoretical simulations reveals that the key lies in probing the weak high-order electrostatic force between the quadrupole-like CO-terminated tip and the polar water molecules at large tip-water distances. This interaction allows the imaging and structural determination of the weakly bonded water clusters and even of their metastable states without inducing any disturbance. This work may open up new possibility of studying the intrinsic structure and electrostatics of ice or water on bulk insulating surfaces, ion hydration and biological water with atomic precision.

physics.chem-ph↗

arXiv2016

Pressuring the low-temperature orthorhombic phase with a non-trivial topological state of Ru2Sn3 to room temperature

We report high pressure studies of the structural stability of Ru2Sn3, a new type of three dimensional topological insulator (3D-TI) with unique quasi-one dimensional Dirac electron states throughout the surface Brillouin zone of its one-atmosphere low temperature orthorhombic form. Our in-situ high-pressure synchrotron x-ray diffraction and electrical resistance measurements reveal that upon increasing pressure the tetragonal to orthorhombic shifts to higher temperature. We find that the stability of the orthorhombic phase that hosts the non-trivial topological ground state can be pushed up to room temperature by an applied pressure of ~ 20 GPa. This is in contrast to the commonly known 3D-TIs whose ground state is usually destroyed under pressure. Our results indicate that pressure provides a possible pathway for realizing a room-temperature topological insulating state in Ru2Sn3.

cond-mat.str-el↗

arXiv2016

Discovery of a bi-critical point between antiferromagnetic and superconducting phases in pressurized single crystal Ca0.73La0.27FeAs2

One of the most strikingly universal features of the high temperature superconductors is that the superconducting phase emerges in the close proximity of the antiferromagnetic phase, and the interplay between these two phases poses a long standing challenge. It is commonly believed that,as the antiferromagnetic transition temperature is continuously suppressed to zero, there appears a quantum critical point, around which the existence of antiferromagnetic fluctuation is responsible for the development of the superconductivity. In contrast to this scenario, we report the discovery of a bi-critical point identified at 2.88 GPa and 26.02 K in the pressurized high quality single crystal Ca0.73La0.27FeAs2 by complementary in situ high pressure measurements. At the critical pressure, we find that the antiferromagnetism suddenly disappears and superconductivity simultaneously emerges at almost the same temperature, and that the external magnetic field suppresses the superconducting transition temperature but hardly affects the antiferromagnetic transition temperature.

cond-mat.supr-con↗

arXiv2016

The vital role of hole-carriers for superconductivity in pressurized black phosphorus

The influence of carrier type on superconductivity has been an important issue for understanding both conventional and unconventional superconductors [1-7]. For elements that superconduct, it is known that hole-carriers govern the superconductivity for transition and main group metals [8-10]. The role of hole-carriers in elements that are not normally conducting but can be converted to superconductors, however, remains unclear due to the lack of experimental data. Here we report the first in-situ high pressure Hall effect measurements on single crystal black phosphorus, measured up to ~ 50 GPa, and find a correlation between the Hall coefficient and the superconducting transition temperature (TC). Our results reveal that hole-carriers play a vital role in developing superconductivity and enhancing TC. Importantly, we also find a Lifshitz transition in the high-pressure cubic phase at ~17.2GPa, which uncovers the origin of a puzzling valley in the superconducting TC-pressure phase diagram. These results offer insight into the role of hole-carriers in developing superconductivity in simple semiconducting solids under pressure.

cond-mat.supr-con↗

arXiv2016

Correlation between non-centrosymmetry and superconductivity in quasi-one-dimensional compounds A2Cr3As3 (A=K, Rb)

Non-centrosymmetric superconductors, whose crystal structure is absent of inversion symmetry, have recently received special attentions due to the expectation of unconventional pairings and exotic physics associated with such pairings. The newly discovered superconductors A2Cr3As3 (A=K, Rb), featured by the quasi-one dimensional structure with conducting CrAs chains, belongs to such kind of superconductor. In this study, we are the first to report the finding that the superconductivity of A2Cr3As3 (A=K, Rb) has a positive correlation with the extent of non-centrosymmetry. Our in-situ high pressure ac susceptibility and synchrotron x-ray diffraction measurements reveal that the larger bond angle of As-Cr-As in the CrAs chains can be taken as a key factor controlling superconductivity. While the smaller bond angle and the distance between the CrAs chains also affect the superconductivity due to their structural connections with the angle. We find that the larger value of the difference between the larger and samller angles, which is associated with the extent of the non-centrosymmetry of the lattice structure, is in favor of superconductivity. These results are expected to shed a new light on the underlying mechanism of the superconductivity in these Q1D superconductors and also to provide new perspective in understanding other non-centrosymmetric superconductors.

cond-mat.supr-con↗

arXiv2016

Device-to-Device Communication Underlaying a Finite Cellular Network Region

Underlay in-band device-to-device (D2D) communication can improve the spectrum efficiency of cellular networks. However, the coexistence of D2D and cellular users causes inter-cell and intra-cell interference. The former can be effectively managed through inter-cell interference coordination and, therefore, is not considered in this work. Instead, we focus on the intra-cell interference and propose a D2D mode selection scheme to manage it inside a finite cellular network region. The potential D2D users are controlled by the base station (BS) to operate in D2D mode based on the average interference generated to the BS. Using stochastic geometry, we study the outage probability experienced at the BS and a D2D receiver, and spectrum reuse ratio, which quantifies the average fraction of successfully transmitting D2D users. The analysis shows that the outage probability at the D2D receiver varies for different locations. Additionally, without impairing the performance at the BS, if the path-loss exponent on the cellular link is slightly lower than that on the D2D link, the spectrum reuse ratio can have negligible decrease while the D2D users' average number of successful transmissions increases with increasing D2D node density. This indicates that an increasing level of D2D communication can be beneficial in future networks..

cs.IT↗