arXiv subjects

Jingsheng Chen

Publications and source records attributed to Jingsheng Chen.

At least 19 recordsLinked to original sources

arXiv2025

Coexistence of unconventional spin-orbit torque and in-plane Hall effect in a single ferromagnetic layer

The symmetry of a material fundamentally governs its spin transport properties. While unconventional spin transport phenomena have been predominantly explored in low-symmetry systems (e.g., $C_{1v}$ symmetry), high-symmetry crystals--which constitute the majority of industry-compatible materials--are generally expected to exhibit only conventional spin-transport behavior. Here, we report the coexistence of two unconventional spin transport effects, the crystal spin-orbit torque (CSOT) and the crystal in-plane Hall effect (CIHE), in a CoPt single ferromagnetic layer with $C_{3v}$ symmetry. Leveraging the CSOT, we achieve nearly 100% field-free perpendicular magnetization switching in a 6 nm CoPt layer at room temperature. Simultaneously, the CIHE observed in this material exhibits nearly identical dependencies on both current angle and growth temperature as the CSOT. Symmetry analysis confirms that both effects share a common physical origin. Our work not only establishes CoPt as a high-performance spin-orbit material, but also demonstrates that unconventional spin transport can be realized in high-symmetry systems, thereby opening a broad pathway for their application in practical spintronics.

cond-mat.mes-hall↗

arXiv2025

Effect of Magnetic Anisotropy and Gradient-Induced Dzyaloshinskii-Moriya Interaction on the Formation of Magnetic Skyrmions

Topological spin textures (e.g. skyrmions) can be stabilized by interfacial Dzyaloshinskii-Moriya interaction (DMI) in the magnetic multilayer, which has been intensively studied. Recently, Bloch-type magnetic skyrmions stabilized by composition gradient-induced DMI (g-DMI) have been observed in 10-nm thick CoPt single layer. However, magnetic anisotropy in gradient-composition engineered CoPt (g-CoPt) films is highly sensitive to both the relative Co/Pt composition and the film thickness, leading to a complex interplay with g-DMI. The stability of skyrmions under the combined influence of magnetic anisotropy and g-DMI is crucial yet remains poorly understood. Here, we conduct a systematic study on the characteristics of magnetic skyrmions as a function of gradient polarity and effective gradient (defined as gradient/thickness) in g-CoPt single layers (thickness of 10-30 nm) using magnetic force microscopy (MFM), bulk magnetometry, and topological Hall effect measurements. Brillouin light scattering spectroscopy confirms that both the sign and magnitude of g-DMI depend on the polarity and amplitude of the composition gradient in g-CoPt films. MFM reveals that skyrmion size and density vary with g-CoPt film thickness, gradient polarity, and applied magnetic field. An increased skyrmion density is observed in samples exhibiting higher magnetic anisotropy, in agreement with micromagnetic simulations and energy barrier calculations.

cond-mat.mtrl-sci↗

arXiv2024

Room-temperature nonlinear transport and microwave rectification in antiferromagnetic MnBi$_2$Te$_4$ films

The discovery of the nonlinear Hall effect provides an avenue for studying the interplay among symmetry, topology, and phase transitions, with potential applications in signal doubling and high-frequency rectification. However, practical applications require devices fabricated on large area thin film as well as room-temperature operation. Here, we demonstrate robust room-temperature nonlinear transverse response and microwave rectification in MnBi$_2$Te$_4$ films grown by molecular beam epitaxy. We observe multiple sign-reversals in the nonlinear response by tuning the chemical potential. Through theoretical analysis, we identify skew scattering and side jump, arising from extrinsic spin-orbit scattering, as the main mechanisms underlying the observed nonlinear signals. Furthermore, we demonstrate radio frequency (RF) rectification in the range of 1-8 gigahertz at 300 K. These findings not only enhance our understanding of the relationship between nonlinear response and magnetism, but also expand the potential applications as energy harvesters and detectors in high-frequency scenarios.

cond-mat.mtrl-sci↗

arXiv2024

Room Temperature Magnetic Skyrmions in Gradient-Composition Engineered CoPt Single Layers

Topologically protected magnetic skyrmions in magnetic materials are stabilized by interfacial or bulk Dzyaloshinskii-Moriya interaction (DMI). Interfacial DMI decays with increase of the magnetic layer thickness in just a few nanometers and bulk DMI typically stabilizes magnetic skyrmions at low temperatures. Consequently, more flexibility in manipulation of DMI is required for utilizing nanoscale skyrmions in energy efficient memory and logic devices at room temperature (RT). Here, we demonstrate the observation of RT skyrmions stabilized by gradient DMI (g-DMI) in composition gradient engineered CoPt single layer films by employing topological Hall effect, magnetic force microscopy, and nitrogen vacancy scanning magnetometry. Skyrmions remain stable at a wide range of applied magnetic fields and are confirmed to be nearly Bloch-type from micromagnetic simulation and analytical magnetization reconstruction. Furthermore, we observe skyrmion pairs which may be explained by skyrmion-antiskyrmion interactions. Our findings expand the family of magnetic materials hosting RT magnetic skyrmions by tuning g-DMI via gradient polarity and choice of magnetic elements.

cond-mat.mes-hall↗

arXiv2024

Topological surface state dominated nonlinear transverse response and microwave rectification at room temperature

Nonlinear Hall effect (NLHE) offers a novel means of uncovering symmetry and topological properties in quantum materials, holding promise for exotic (opto)electronic applications such as microwave rectification and THz detection. The BCD-independent NLHE could exhibit a robust response even at room temperature, which is highly desirable for practical applications. However, in materials with bulk inversion symmetry, the coexistence of bulk and surface conducting channels often leads to a suppressed NLHE and complex thickness-dependent behavior. Here, we report the observation of room-temperature nonlinear transverse response in 3D topological insulator Bi2Te3 thin films, whose electrical transport properties are dominated by topological surface state (TSS). By varying the thickness of Bi2Te3 epitaxial films from 7 nm to 50 nm, we found that the nonlinear transverse response increases with thickness from 7 nm to 25 nm and remains almost constant above 25 nm. This is consistent with the thickness-dependent basic transport properties, including conductance, carrier density, and mobility, indicating a pure and robust TSS-dominated linear and nonlinear transport in thick (>25 nm) Bi2Te3 films. The weaker nonlinear transverse response in Bi2Te3 below 25 nm was attributed to Te deficiency and poorer crystallinity. By utilizing the TSS-dominated electrical second harmonic generation, we successfully achieved the microwave rectification from 0.01 to 16.6 GHz in 30 nm and bulk Bi2Te3. Our work demonstrated the room temperature nonlinear transverse response in a paradigm topological insulator, addressing the tunability of the topological second harmonic response by thickness engineering.

cond-mat.mtrl-sci↗

arXiv2023

Effective electrical manipulation of topological antiferromagnet by orbital Hall effect

Electrical control of the non-trivial topology in Weyl antiferromagnet is of great interests to develop next-generation spintronic devices. Recent works suggest that spin Hall effect can switch the topological antiferromagnetic order. However, the switching efficiency remains relatively low. Here, we demonstrate effective manipulation of antiferromagnetic order in Weyl semimetal Mn3Sn by orbital Hall effect originated from metal Mn or oxide CuOx. While Mn3Sn is proven to be able to convert orbit current to spin current by itself, we find that inserting a heavy metal layer like Pt with proper thickness can effectively reduce the critical switching current density by one order of magnitude. In addition, we show that the memristor-like switching behavior of Mn3Sn can mimic the potentiation and depression processes of a synapse with high linearity, which is beneficial for constructing artificial neural network with high accuracy. Our work paves an alternative way to manipulate topological antiferromagnetic order and may inspire more high-performance antiferromagnetic functional devices.

cond-mat.mtrl-sci↗

arXiv2022

Anomalous anisotropy of spin current in a cubic spin source with noncollinear antiferromagnetism

Cubic materials host high crystal symmetry and hence are not expected to support anisotropy in transport phenomena. In contrast to this common expectation, here we report an anomalous anisotropy of spin current can emerge in the (001) film of Mn${_3}$Pt, a noncollinear antiferromagnetic spin source with face-centered cubic structure. Such spin current anisotropy originates from the intertwined time reversal-odd ($T$-odd) and time reversal-even ($T$-even) spin Hall effects. Based on symmetry analyses and experimental characterizations of the current-induced spin torques in Mn${_3}$Pt-based heterostructures, we find that the spin current generated by Mn${_3}$Pt (001) exhibits exotic dependences on the current direction for all the spin components, deviating from that in conventional cubic systems. We also demonstrate that such an anisotropic spin current can be used to realize low-power spintronic applications such as the efficient field-free switching of the perpendicular magnetizations.

cond-mat.mtrl-sci↗

arXiv2021

Epitaxial Growth of Ultraflat Bismuthene with Large Topological Band Inversion Enabled by Substrate-Orbital-Filtering Effect

Quantum spin Hall (QSH) systems hold promises of low-power-consuming spintronic devices, yet their practical applications are extremely impeded by the small energy gaps. Fabricating QSH materials with large gaps, especially under the guidance of design principles, is essential for both scientific research and practical applications. Here, we demonstrate that large on-site atomic spin-orbit coupling can be directly exploited via the intriguing substrate-orbital-filtering effect to generate large-gap QSH systems and experimentally realized on the epitaxially synthesized ultraflat bismuthene on Ag(111). Theoretical calculations reveal that the underlying substrate selectively filters Bi pz orbitals away from the Fermi level, leading pxy orbitals with nonzero magnetic quantum numbers, resulting in large topological gap of ~1 eV at the K point. The corresponding topological edge states are identified through scanning tunneling spectroscopy combined with density functional theory calculations. Our findings provide general strategies to design large-gap QSH systems and further explore their topology-related physics.

cond-mat.mes-hall↗

arXiv2021

Bipolar conduction and giant positive magnetoresistance in doped metallic titanium oxide heterostructures

Empowering conventional materials with unexpected magnetoelectric properties is appealing to the multi-functionalization of existing devices and the exploration of future electronics. Recently, owing to its unique effect in modulating a matter's properties, ultra-small dopants, e.g. H, D, and Li, attract enormous attention in creating emergent functionalities, such as superconductivity, and metal-insulator transition. Here, we report an observation of bipolar conduction accompanied by a giant positive magnetoresistance in D-doped metallic Ti oxide (TiOxDy) films. To overcome the challenges in intercalating the D into a crystalline oxide, a series of TiOxDy were formed by sequentially doping Ti with D and surface/interface oxidation. Intriguingly, while the electron mobility of the TiOxDy increases by an order of magnitude larger after doping, the emergent holes also exhibit high mobility. Moreover, the bipolar conduction induces a giant magnetoresistance up to 900% at 6 T, which is ~6 times higher than its conventional phase. Our study paves a way to empower conventional materials in existing electronics and induce novel electronic phases.

cond-mat.mtrl-sci↗

arXiv2021

Tunable Rashba spin-orbit coupling and its interplay with multiorbital effect and magnetic ordering at oxide interfaces

The complex oxide heterostructures such as LaAlO3/SrTiO3 (LAO/STO) interface are paradigmatic platforms to explore emerging multi-degrees of freedom coupling and the associated exotic phenomena. In this study, we reveal the effects of multiorbital and magnetic ordering on Rashba spin-orbit coupling (SOC) at the LAO/STO (001) interface. Based on first-principles calculations, we show that the Rashba spin splitting near the conduction band edge can be tuned substantially by the interfacial insulator-metal transition due to the multiorbital effect of the lowest t_2g bands. We further unravel a competition between Rashba SOC and intrinsic magnetism, in which the Rashba SOC induced spin polarization is suppressed by the interfacial magnetic ordering. These results deepen our understanding of intricate electronic and magnetic reconstruction at the perovskite oxide interfaces and shed light on the engineering of oxide heterostructures for all-oxides-based spintronic devices.

cond-mat.mtrl-sci↗

arXiv2020

Magnetic asymmetry induced anomalous spin-orbit torque in IrMn

We demonstrate an anomalous spin-orbit torque induced by the broken magnetic symmetry in the antiferromagnet IrMn. We study the magnetic structure of three phases of IrMn thin films using neutron diffraction technique. The magnetic mirror symmetry M' is broken laterally in both L10-IrMn and L12-IrMn3 but not γ-IrMn3. We observe an out-of-plane damping-like spin-orbit torque in both L10-IrMn/permalloy and L12-IrMn3/permalloy bilayers but not in γ-IrMn3/permalloy. This is consistent with both the symmetry analysis on the effects of a broken M' on spin-orbit torque and the theoretical predictions of the spin Hall effect and the Rashba-Edelstein effect. In addition, the measured spin-orbit torque efficiencies are 0.61+-0.01, 1.01+-0.03 and 0.80+-0.01 for the L10, L12 and γ phases, respectively. Our work highlights the critical roles of the magnetic asymmetry in spin-orbit torque generation.

cond-mat.mtrl-sci↗

arXiv2020

Perpendicular magnetic anisotropy and Dzyaloshinskii-Moriya interaction at an oxide/ferromagnetic metal interface

We report on the study of both perpendicular magnetic anisotropy (PMA) and Dzyaloshinskii-Moriya interaction (DMI) at an oxide/ferromagnetic metal (FM) interface, i.e. BaTiO3 (BTO)/CoFeB. Thanks to the functional properties of the BTO film and the capability to precisely control its growth, we are able to distinguish the dominant role of the oxide termination (TiO2 vs BaO), from the moderate effect of ferroelectric polarization in the BTO film, on the PMA and DMI at the oxide/FM interface. We find that the interfacial magnetic anisotropy energy of the BaO-BTO/CoFeB structure is two times larger than that of the TiO2-BTO/CoFeB, while the DMI of the TiO2-BTO/CoFeB interface is larger. We explain the observed phenomena by first-principles calculations, which ascribe them to the different electronic states around the Fermi level at the oxide/ferromagnetic metal interfaces and the different spin-flip processes. This study paves the way for further investigation of the PMA and DMI at various oxide/FM structures and thus their applications in the promising field of energy-efficient devices.

cond-mat.mtrl-sci↗

arXiv2018

Thickness-dependent self-polarization-induced intrinsic magnetoelectric effects in La0.67Sr0.33MnO3/PbZr0.52Ti0.48O3 heterostructures

The self-polarization of PbZr0.52Ti0.48O3 thin film is switched by changing film thickness through the competition between the strain relaxation-induced flexoelectric fields and the interfacial effects. Without an applied electric field, this reversal of self-polarization is exploited to control the magnetic properties of La0.67Sr0.33MnO3 by the competition/cooperation between the charge-mediated and the strain-mediated effects. Scanning transmission electron microscopy, polarized near edge x-ray absorption spectroscopy, and half-integer diffraction measurements are employed to decode this intrinsic magnetoelectric effects in La0.67Sr0.33MnO3/PbZr0.52Ti0.48O3 heterostructures. With PbZr0.52Ti0.48O3 films < 48 nm, the self-polarization-driven carrier density modulation around La0.67Sr0.33MnO3/PbZr0.52Ti0.48O3 interface and the strain-mediated Mn 3d orbital occupancy work together to enhance magnetism of 14 unit cells La0.67Sr0.33MnO3 film; with PbZr0.52Ti0.48O3 layers > 48 nm, the strain-induced the change of bond length/angle of MnO6 accompanied with a modified spin configuration are responsible for the decrease in Curie temperature and magnetization of 14 unit cells La0.67Sr0.33MnO3 film.

cond-mat.mtrl-sci↗

arXiv2018

Electrical switching of perpendicular magnetization in L10 FePt single layer

Electrical manipulation of magnetization is essential for integration of magnetic functionalities such as magnetic memories and magnetic logic devices into electronic circuits. The current induced spin-orbit torque (SOT) in heavy metal/ferromagnet (HM/FM) bilayers via the spin Hall effect in the HM and/or the Rashba effect at the interfaces provides an efficient way to switch the magnetization. In the meantime, current induced SOT has also been used to switch the in-plane magnetization in single layers such as ferromagnetic semiconductor (Ga,Mn)As and antiferromagnetic metal CuMnAs with globally or locally broken inversion symmetry. Here we demonstrate the current induced perpendicular magnetization switching in L10 FePt single layer. The current induced spin-orbit effective fields in L10 FePt increase with the chemical ordering parameter (S). In 20 nm FePt films with high S, we observe a large charge-to-spin conversion efficiency and a switching current density as low as 7.0E6 A/cm2. We anticipate our findings may stimulate the exploration of the spin-orbit torques in bulk perpendicular magnetic anisotropic materials and the application of high-efficient perpendicular magnetization switching in single FM layer.

cond-mat.mtrl-sci↗

arXiv2018

Anisotropic Gilbert damping in perovskite La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ thin film

The viscous Gilbert damping parameter governing magnetization dynamics is of primary importance for various spintronics applications. Although, the damping constant is believed to be anisotropic by theories. It is commonly treated as a scalar due to lack of experimental evidence. Here, we present an elaborate angle dependent broadband ferromagnetic resonance study of high quality epitaxial La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ films. Extrinsic effects are suppressed and we show convincing evidence of anisotropic damping with twofold symmetry at room temperature. The observed anisotropic relaxation is attributed to the magnetization orientation dependence of the band structure. In addition, we demonstrated that such anisotropy can be tailored by manipulating the stain. This work provides new insights to understand the mechanism of magnetization relaxation.

cond-mat.mtrl-sci↗

arXiv2017

Control of magnetic anisotropy by orbital hybridization in (La0.67Sr0.33MnO3)n/(SrTiO3)n superlattice

The asymmetry of chemical nature at the hetero-structural interface offers an unique opportunity to design desirable electronic structure by controlling charge transfer and orbital hybridization across the interface. However, the control of hetero-interface remains a daunting task. Here, we report the modulation of interfacial coupling of (La0.67Sr0.33MnO3)n/(SrTiO3)n superlattices by manipulating the periodic thickness with n unit cells of SrTiO3 and n unit cells La0.67Sr0.33MnO3. The easy axis of magnetic anisotropy rotates from in-plane (n = 10) to out-of-plane (n = 2) orientation at 150 K. Transmission electron microscopy reveals enlarged tetragonal ratio > 1 with breaking of volume conservation around the (La0.67Sr0.33MnO3)n/(SrTiO3)n interface, and electronic charge transfer from Mn to Ti 3d orbitals across the interface. Orbital hybridization accompanying the charge transfer results in preferred occupancy of 3d3z2-r2 orbital at the interface, which induces a stronger electronic hopping integral along the out-of-plane direction and corresponding out-of-plane magnetic easy axis for n = 2. We demonstrate that interfacial orbital hybridization in superlattices of strongly correlated oxides may be a promising approach to tailor electronic and magnetic properties in device applications.

cond-mat.mtrl-sci↗

arXiv2017

Static and Dynamic Magnetic Properties of FeMn/Pt Multilayers

Recently we have demonstrated the presence of spin-orbit toque in FeMn/Pt multilayers which, in combination with the anisotropy field, is able to rotate its magnetization consecutively from 0o to 360o without any external field. Here, we report on an investigation of static and dynamic magnetic properties of FeMn/Pt multilayers using combined techniques of magnetometry, ferromagnetic resonance, inverse spin Hall effect and spin Hall magnetoresistance measurements. The FeMn/Pt multilayer was found to exhibit ferromagnetic properties, and its temperature dependence of saturation magnetization can be fitted well using a phenomenological model by including a finite distribution in Curie temperature due to subtle thickness variations across the multilayer samples. The non-uniformity in static magnetic properties is also manifested in the ferromagnetic resonance spectra, which typically exhibit a broad resonance peak. A damping parameter of around 0.106 is derived from the frequency dependence of ferromagnetic resonance linewidth, which is comparable to the reported values for other types of Pt-based multilayers. Clear inverse spin Hall signals and spin Hall magnetoresistance have been observed in all samples below the Curie temperature, which corroborate the strong spin-orbit torque effect observed previously.

cond-mat.mtrl-sci↗

arXiv2016

Gate Tunable In- and Out-Of-Plane Spin-Orbit Coupling and Spin Splitting Anisotropy at LaAlO3/SrTiO3 (110) Interface

Manipulating spin-orbit coupling (SOC) is important for devices such as spin-orbit torque based memory and its understanding is neccessary to answer several fundamental open questions in triplet state superconductivity, topological insulators and Majorana fermions. Here we report spin splitting of 25 meV at the LaAlO3/SrTiO3 (110) interface for in-plane spins at a current density of 1.4x104 A/cm2, which is large compared to that found in semiconductor heterostructures or the LaAlO3/SrTiO3 (100) interface, and in addition it is anisotropic. The anisotropy arises from the difference in electron effective mass along the [001] and [1-10] directions. Our study predicts a spin splitting energy > 1000 meV at a current density of 107 A/cm2, which is enormous compared to metallic systems and will be an ideal spin polarized source. In addition to the in-plane effect, there is an unexpected gate-tunable out-of-plane SOC at the LaAlO3/SrTiO3 (110) interface when the spins lie out-of-plane due to broken symmetry in the plane of the interface. We demonstrate that this can be manipulated by varying the LaAlO3 thickness showing that this interface can be engineered for spin-orbit torque devices.

cond-mat.mes-hall↗