arXiv subjects

Jinpeng Tian

Publications and source records attributed to Jinpeng Tian.

12 recordsLinked to original sources

arXiv2023

Room-temperature correlated states in twisted bilayer MoS$_2$

Moiré superlattices have emerged as an exciting condensed-matter quantum simulator for exploring the exotic physics of strong electronic correlations. Notable progress has been witnessed, but such correlated states are achievable usually at low temperatures. Here, we report the transport evidences of room-temperature correlated electronic states and layer-hybridized SU(4) Hubbard model simulator in AB-stacked MoS$_2$ homo-bilayer moiré superlattices. Correlated insulating states at moiré band filling factors v = 1, 2, 3 are unambiguously established in twisted bilayer MoS$_2$. Remarkably, the correlated electronic states can persist up to a record-high critical temperature of over 285 K. The realization of room-temperature correlated states in twisted bilayer MoS$_2$ can be understood as the cooperation effects of the stacking-specific atomic reconstruction and the resonantly enhanced interlayer hybridization, which largely amplify the moiré superlattice effects on electronic correlations. Furthermore, extreme large non-linear Hall responses up to room-temperature are uncovered near correlated insulating states, demonstrating the quantum geometry of moiré flat conduction band.

cond-mat.mtrl-sci↗

arXiv2023

Observation of first-order quantum phase transitions and ferromagnetism in twisted double bilayer graphene

Twisted graphene multilayers are highly tunable flatband systems for developing new phases of matter. Thus far, while orbital ferromagnetism has been observed in valley polarized phases, the long-range orders of other correlated phases as well as the quantum phase transitions between different orders mostly remain unknown. Here, we report an observation of Coulomb interaction driven first-order quantum phase transitions and ferromagnetism in twisted double bilayer graphene (TDBG). At zero magnetic field, the transitions are revealed in a series of step-like abrupt resistance jumps with prominent hysteresis loop when either the displacement field (D) or the carrier density (n) is tuned across symmetry-breaking boundary near half filling, indicating a formation of ordered domains. It is worth noting that the good turnability and switching of these states gives a rise to a memory performance with a large on/off ratio. Moreover, when both spin and valley play the roles at finite magnetic field, we observe abundant first-order quantum phase transitions among normal metallic states from charge neutral point, orbital ferromagnetic states from quarter filling, and spin-polarized states from half filling. We interpret these first-order phase transitions in the picture of phase separations and spin domain percolations driven by multi-field tunable Coulomb interactions, in agreement with Lifshitz transition from Hartree-Fock calculations. The observed multi-filed tunable domain structure and its hysteresis resembles the characteristics of multiferroics, revealing intriguing magnetoelectric properties. Our result enriches the correlated phase diagram in TDBG for discovering novel exotic phases and quantum phase transitions, and it would benefit other twisted moiré systems as well.

cond-mat.mes-hall↗

arXiv2023

Quantum oscillations in field-induced correlated insulators of a moiré superlattice

We report an observation of quantum oscillations (QOs) in the correlated insulators with valley anisotropy of twisted double bilayer graphene (TDBG). The anomalous QOs are best captured in the magneto resistivity oscillations of the insulators at v = -2, with a period of 1/B and an oscillation amplitude as high as 150 kΩ. The QOs can survive up to ~10 K, and above 12 K, the insulating behaviors are dominant. The QOs of the insulator are strongly D dependent: the carrier density extracted from the 1/B periodicity decreases almost linearly with D from -0.7 to -1.1 V/nm, suggesting a reduced Fermi surface; the effective mass from Lifshitz-Kosevich analysis depends nonlinearly on D, reaching a minimal value of 0.1 me at D = ~ -1.0 V/nm. Similar observations of QOs are also found at v = 2, as well as in other devices without graphite gate. We interpret the D sensitive QOs of the correlated insulators in the picture of band inversion. By reconstructing an inverted band model with the measured effective mass and Fermi surface, the density of state at the gap, calculated from thermal broadened Landau levels, agrees qualitatively with the observed QOs in the insulators. While more theoretical understandings are needed in the future to fully account for the anomalous QOs in this moiré system, our study suggests that TDBG is an excellent platform to discover exotic phases where correlation and topology are at play.

cond-mat.mes-hall↗

arXiv2022

Temperature-linear Resistivity in Twisted Double Bilayer Graphene

We report an experimental study of carrier density (n), displacement field (D) and twist angle (θ) dependence of temperature (T)-linear resistivity in twisted double bilayer graphene (TDBG). For a large twist angle (θ>1.5°) where correlated insulating states are absent, we observe a T-linear resistivity (with the slope of the order ~10Ω/K) over a wide range of carrier density and its slope decreases with increasing of n, in agreement with acoustic phonon scattering model semi-quantitatively. The slope of T-linear resistivity is non-monotonically dependent on the displacement field with a single peak structure. For device with θ~1.23° at which correlated states emerge, the slope of T-linear resistivity is found maximum (~100Ω/K) at the boundary of the halo structure where phase transition occurs, with signatures of continuous phase transition, Planckian dissipation, and the diverging effective mass; these observations are in line with quantum critical behaviors, which might be due to the symmetry-breaking instability at the critical points. Our results shed new light on correlated physics in TDBG and other twisted moiré systems.

cond-mat.mes-hall↗

arXiv2022

A disorder-sensitive emergent vortex phase identified in high-Tc superconductor (Li,Fe)OHFeSe

The magneto-transport properties are systematically measured under c-direction fields up to 33 T for a series of single-crystal films of intercalated iron-selenide superconductor (Li,Fe)OHFeSe. The film samples with varying degree of disorder are grown hydrothermally. We observe a magnetic-field-enhanced shoulder-like feature in the mixed state of the high-Tc (Li,Fe)OHFeSe films with weak disorder, while the feature fades away in the films with enhanced disorder. The irreversibility field is significantly suppressed to lower temperatures with the appearance of the shoulder feature. Based on the experiment and model analysis, we establish a new vortex phase diagram for the weakly disordered high-Tc (Li,Fe)OHFeSe, which features an emergent dissipative vortex phase intermediate between the common vortex glass and liquid phases. The reason for the emergence of this intermediate vortex state is further discussed based on related experiments and models.

cond-mat.supr-con↗

arXiv2022

Layer-by-Layer Epitaxy of Multilayer MoS2 Wafers

Two-dimensional (2D) semiconductor of MoS2 has great potential for advanced electronics technologies beyond silicon1-9. So far, high-quality monolayer MoS2 wafers10-12 are already available and various demonstrations from individual transistors to integrated circuits have also been shown13-15. In addition to the monolayer, multilayers have narrower band gaps but improved carrier mobilities and current capacities over the monolayer5,16-18. However, achieving high-quality multilayer MoS2 wafers remains a challenge. Here we report the growth of high quality multilayer MoS2 4-inch wafers via the layer-by-layer epitaxy process. The epitaxy leads to well-defined stacking orders between adjacent epitaxial layers and offers a delicate control of layer numbers up to 6. Systematic evaluations on the atomic structures and electronic properties were carried out for achieved wafers with different layer numbers. Significant improvements on device performances were found in thicker-layer field effect transistors (FETs), as expected. For example, the average field-effect mobility (μFE) at room temperature (RT) can increase from ~80 cm2V-1s-1 for monolayer to ~110/145 cm2V-1s-1 for bilayer/trilayer devices. The highest RT μFE=234.7 cm2V-1s-1 and a record-high on-current densities of 1.704 mAμm-1 at Vds=2 V were also achieved in trilayer MoS2 FETs with a high on/off ratio exceeding 107. Our work hence moves a step closer to practical applications of 2D MoS2 in electronics.

physics.app-ph↗

arXiv2021

Isospin competitions and valley polarized correlated insulators in twisted double bilayer graphene

New phase of matter usually emerges when a given symmetry breaks spontaneously, which can involve charge, spin, and valley degree of freedoms. Here, we report an observation of new correlated insulators evolved from spin polarized states to valley polarized states in AB-BA stacked twisted double bilayer graphene (TDBG). The transition of the isospin polarization is a result of the competition between spin and valley, driven by the displacement field (D). At a high field |D| > 0.7 V/nm, we observe valley polarized correlated insulators with a big Zeeman g factor of ~10, both at v = 2 in the moiré conduction band and more surprisingly at v = -2 in the moiré valence band. At a medium field |D| < 0.6 V/nm, by contrast, it is a conventional spin polarized correlated insulator at v = 2 and a featureless metal at v = -2. Moreover, we observe a valley polarized Chern insulator with C = 2 emanating at v = 2 in the electron side and a valley polarized Fermi surface around v = -2 in the hole side. The valley Chern insulator with C = 2 is evident from a well quantized Hall conductance plateau at 2e^2/h and correspondingly a vanishing longitudinal component. The valley polarized Fermi surface is topologically trivial with C = 0, and it shows a series of quantized Landau levels with v_LL = 0, 1, 2, 3, 4 and others. These observations are in good agreements with our band and topology calculations. Our results demonstrate a feasible way to realize isospin control and to obtain new phases of matter in TDBG by the displacement field, and might benefit other twisted or non-twisted multilayer systems.

cond-mat.mes-hall↗

arXiv2021

Spatially indirect intervalley excitons in bilayer WSe2

Spatially indirect excitons with displaced wavefunctions of electrons and holes play a pivotal role in a large portfolio of fascinating physical phenomena and emerging optoelectronic applications, such as valleytronics, exciton spin Hall effect, excitonic integrated circuit and high-temperature superfluidity. Here, we uncover three types of spatially indirect excitons (including their phonon replicas) and their quantum-confined Stark effects in hexagonal boron nitride encapsulated bilayer WSe2, by performing electric field-tunable photoluminescence measurements. Because of different out-of-plane electric dipole moments, the energy order between the three types of spatially indirect excitons can be switched by a vertical electric field. Remarkably, we demonstrate, assisted by first-principles calculations, that the observed spatially indirect excitons in bilayer WSe2 are also momentum-indirect, involving electrons and holes from Q and K/Γ valleys in the Brillouin zone, respectively. This is in contrast to the previously reported spatially indirect excitons with electrons and holes localized in the same valley. Furthermore, we find that the spatially indirect intervalley excitons in bilayer WSe2 can exhibit considerable, doping-sensitive circular polarization. The spatially indirect excitons with momentum-dark nature and highly tunable circular polarization open new avenues for exotic valley physics and technological innovations in photonics and optoelectronics.

cond-mat.mes-hall↗

arXiv2021

Optically and magnetically addressable valley pseudospin of interlayer excitons in bilayer MoS2

Interlayer valley excitons in bilayer MoS2 feature concurrently large oscillator strength and long lifetime, and hence represent an advantageous scenario for valleytronic applications. However, control of valley pseudospin of interlayer excitons in pristine bilayer MoS2, which lies at the heart of valleytronics, has remained elusive. Here we report the observation of highly circularly polarized photoluminescence from interlayer excitons of bilayer MoS2 with both optical and magnetic addressability. Under excitation of circularly polarized light near exciton resonance, interlayer excitons of bilayer MoS2 show a near-unity, but negative circular polarization. Significantly, by breaking time-reversal symmetry with an out-of-plane magnetic field, a record level of spontaneous valley polarization (7.7%/Tesla) is identified for interlayer excitons in bilayer MoS2. The giant valley polarization of the interlayer excitons in bilayer MoS2, together with the feasibility of electrical/optical/magnetic control and strong oscillator strength, provides a firm basis for the development of next-generation electronic and optoelectronic applications.

cond-mat.mes-hall↗

arXiv2020

Correlated states in twisted double bilayer graphene

Electron-electron interactions play an important role in graphene and related systems and can induce exotic quantum states, especially in a stacked bilayer with a small twist angle. For bilayer graphene where the two layers are twisted by a "magic angle", flat band and strong many-body effects lead to correlated insulating states and superconductivity. In contrast to monolayer graphene, the band structure of untwisted bilayer graphene can be further tuned by a displacement field, providing an extra degree of freedom to control the flat band that should appear when two bilayers are stacked on top of each other. Here, we report the discovery and characterization of such displacement-field tunable electronic phases in twisted double bilayer graphene. We observe insulating states at a half-filled conduction band in an intermediate range of displacement fields. Furthermore, the resistance gap in the correlated insulator increases with respect to the in-plane magnetic fields and we find that the g factor according to spin Zeeman effect is ~2, indicating spin polarization at half filling. These results establish the twisted double bilayer graphene as an easily tunable platform for exploring quantum many-body states.

cond-mat.supr-con↗

arXiv2019

Giant enhancement of critical current density at high field in superconducting (Li,Fe)OHFeSe films by Mn doping

Critical current density (Jc) is one of the major limiting factors for high field applications of iron-based superconductors. Here, we report that Mn-ions are successfully incorporated into nontoxic superconducting (Li,Fe)OHFeSe films. Remarkably, the Jc is significantly enhanced from 0.03 to 0.32 MA/cm^2 under 33 T, and the vortex pinning force density monotonically increases up to 106 GN/m^3, which is the highest record so far among all iron-based superconductors. Our results demonstrate that Mn incorporation is an effective method to optimize the performance of (Li,Fe)OHFeSe films, offering a promising candidate for high-field applications.

cond-mat.supr-con↗

arXiv2018

Electronic phase separation in iron selenide (Li, Fe)OHFeSe superconductor system

The phenomenon of phase separation into antiferromagnetic (AFM) and superconducting (SC) or normal-state regions has great implication for the origin of high-temperature (high-Tc) superconductivity. However, the occurrence of an intrinsic antiferromagnetism above the Tc of (Li, Fe)OHFeSe superconductor is questioned. Here we report a systematic study on a series of (Li, Fe)OHFeSe single crystal samples with Tc up to ~41 K. We observe an evident drop in the static magnetization at Tafm ~125 K, in some of the SC (Tc < ~38 K, cell parameter c < ~9.27 Å) and non-SC samples. We verify that this AFM signal is intrinsic to (Li, Fe)OHFeSe. Thus, our observations indicate mesoscopic-to-macroscopic coexistence of an AFM state with the normal (below Tafm) or SC (below Tc) state in (Li, Fe)OHFeSe. We explain such coexistence by electronic phase separation, similar to that in high-Tc cuprates and iron arsenides. However, such an AFM signal can be absent in some other samples of (Li, Fe)OHFeSe, particularly it is never observed in the SC samples of Tc > ~38 K, owing to a spatial scale of the phase separation too small for the macroscopic magnetic probe. For this case, we propose a microscopic electronic phase separation. It is suggested that the microscopic static phase separation reaches vanishing point in high-Tc (Li, Fe)OHFeSe, by the occurrence of two-dimensional AFM spin fluctuations below nearly the same temperature as Tafm reported previously for a (Li, Fe)OHFeSe (Tc ~42 K) single crystal. A complete phase diagram is thus established. Our study provides key information of the underlying physics for high-Tc superconductivity.

cond-mat.supr-con↗