arXiv subjects

Jinxi Lu

Publications and source records attributed to Jinxi Lu.

6 recordsLinked to original sources

arXiv2026

Field-induced asymmetric band flattening and ideal quantum geometry in rhombohedral graphene

Rhombohedral graphene exhibits an exceptionally diverse array of correlated phases that depend sensitively on the displacement field. Compiling reported phases into a unified phase diagram reveals a pronounced field-dependent electron-hole asymmetry: correlated states on the hole-doped side emerge at small displacement fields, whereas the fractional quantum anomalous Hall effect (FQAHE) is observed exclusively on the electron-doped side under large displacement fields. This stark asymmetry highlights the need to understand how flat bands evolve with displacement fields. Here, we directly visualize the field-induced electron-hole asymmetric band flattening in rhombohedral pentalayer graphene (R5G) using nanospot angle-resolved photoemission spectroscopy with electrostatic gating. Beyond gap opening and spectral weight redistribution indicative of layer polarization, the gating field drives a strongly asymmetric modification of the flat bands: the flat valence band (FVB) evolves into an M-shaped dispersion at high field, whereas the flat conduction band (FCB) progressively flattens with increasing field. Comparison with calculations identifies critical parameters governing the band curvature of R5G, from which the resulting finite Berry curvature and near-ideal quantum geometry support the emergence of topological phases under electron doping at large fields. These results establish a direct link between the asymmetric phase diagram, band structure evolution, and quantum geometry, providing a microscopic framework for understanding correlated and topological phases in rhombohedral graphene.

cond-mat.mes-hall↗

arXiv2026

Observation of Floquet-induced gap in graphene

Floquet engineering provides a powerful pathway for creating non-equilibrium phases of matter with tailored electronic structures and properties through time-periodic driving. As the original theoretical prototype, graphene established the framework in which the Floquet topological insulator with light-induced anomalous Hall effect was proposed. However, the defining spectroscopic signature of Floquet engineering in graphene--light-induced hybridization (avoided-crossing) gap at Floquet band crossings, has remained experimentally elusive. Here, we report direct observation of Floquet-induced hybridization gap in monolayer graphene under resonant driving by a strong light field. Time- and angle-resolved photoemission spectroscopy reveals gap opening at Floquet band crossings, accompanied by coherent Floquet sidebands. The gap exhibits pronounced momentum anisotropy, featuring two Dirac nodes protected by the spatiotemporal symmetry and tunable by light polarization. These results provide long-sought experimental demonstration of Floquet band engineering in graphene, opening up opportunities for light-field engineered quantum phases in graphene and related materials.

cond-mat.mes-hall↗

arXiv2026

Robust Floquet-induced gap in irradiated graphite

Floquet engineering provides an emerging pathway for tailoring the electronic states of quantum materials through time-periodic drive. A critical step along this direction is achieving light-induced modifications of the dynamical electronic structure, such as avoided-crossing gap at the Floquet Brillouin zone boundary, via efficient coupling of electrons with the coherent light-field. Here, we report robust Floquet-induced gap in bulk graphite that persists despite the presence of interlayer coupling and photo-excitation. Using time- and angle-resolved photoemission spectroscopy with intense mid-infrared pumping, we directly reveal Floquet-induced gaps at resonance points both in the valence and conduction bands, accompanied by coherent Floquet sidebands. The gap and sidebands coexist with photo-excited carriers, yet their distinct timescales allow us to disentangle their origins. Our demonstration of robust Floquet-induced gaps establishes graphite as a platform for coherent manipulation of Dirac fermions and realization of light-engineered quantum phases.

cond-mat.mes-hall↗

arXiv2025

Moir\'e-modulated $\Gamma$ valley in twisted bilayer and twisted double-bilayer MoTe$_2$

Twisted MoTe$_2$ hosts intriguing correlated quantum phenomena including the fractional quantum anomalous Hall effect in twisted bilayer (t-BL) MoTe$_2$ near 3.7$^\circ$, which is sensitive to the twist angle and moir\'e superlattices. Here, we directly visualize the twist-angle-modulated electronic structure of t-BL and twisted double-bilayer (t-DBL) near this critical angle. We find that the moir\'e superlattice not only modifies the relative energy between $\Gamma$ and K valleys in t-BL MoTe$_2$, but also strongly reconstructs the $\Gamma$ valley for both t-BL and t-DBL. Specifically, the deep $p_z$-derived band at $\Gamma$ exhibits a distinct splitting that systematically varies with increasing twist angle. Theoretical analysis suggests that this modulation arises from the twist-angle-dependent lattice relaxation, especially interfacial corrugations. Our work directly visualizes the moir\'e-modulated electronic structure and provides key spectroscopic information of lattice relaxation and interlayer interactions underlying the physics of twisted MoTe$_2$.

cond-mat.str-el↗

arXiv2025

Intrinsic layer polarization and multi-flatband transport in non-centrosymmetric mixed-stacked multilayer graphene

Graphene multilayers exhibit electronic spectra that depend sensitively on both the number of layers and their stacking order. Beyond trilayer graphene, mixed stacking sequences (alternating Bernal and rhombohedral layers) give rise to multiple coexisting low-energy bands. Here we investigate ABCBC-stacked pentalayer graphene, a less-studied non-centrosymmetric mixed sequence. This stacking can be regarded as an ABC (rhombohedral) trilayer on top of an AB (Bernal) bilayer, so its low-energy band structure contains both a cubic band and a parabolic band that hybridize. In transport measurements, we observe an intrinsic band gap at charge neutrality whose magnitude changes asymmetrically under an applied perpendicular displacement field. This behavior reflects the spontaneous layer polarization inherent to the broken inversion symmetry and mirror symmetry. By tuning the displacement field and carrier density, we drive multiple Lifshitz transitions in the Fermi surface topology and realize Landau levels with different degeneracies arising from the multi-flatband system. Remarkably, a v = -6 quantum Hall state emerges at an exceptionally low magnetic field (~20 mT), indicating the interplay between spontaneous symmetry breaking and Berry curvatures. Our results establish mixed-stacked multilayer graphene as a tunable platform with various broken symmetries and multiple flatbands, suitable for exploring emergent correlated electronic states.

cond-mat.mes-hall↗

arXiv2025

Moir\'e enhanced flat band in rhombohedral graphene

The fractional quantum anomalous Hall effect (FQAHE) is a fascinating emergent quantum state characterized by fractionally charged excitations in the absence of magnetic field,which could arise from the intricate interplay between electron correlation, nontrivial topology and spontaneous time-reversal symmetry breaking. Recently, FQAHE has been realized in aligned rhombohedral pentalayer graphene on BN superlattice (aligned R5G/BN), where the topological flat band is modulated by the moir\'e potential. However, intriguingly, the FQAHE is observed only when electrons are pushed away from the moir\'e interface. The apparently opposite implications from these experimental observations, along with different theoretical models, have sparked intense debates regarding the role of the moir\'e potential. Unambiguous experimental observation of the topological flat band as well as moir\'e bands with energy and momentum resolved information is therefore critical to elucidate the underlying mechanism. Here by performing nanospot angle-resolved photoemission spectroscopy (NanoARPES) measurements, we directly reveal the topological flat band electronic structures of R5G, from which key hopping parameters essential for determining the fundamental electronic structure of rhombohedral graphene are extracted. Moreover, a comparison of electronic structures between aligned and non-aligned samples reveals that the moir\'e potential plays a pivotal role in enhancing the topological flat band in the aligned sample. Our study provides experimental guiding lines to narrow down the phase space of rhombohedral graphene, laying an important foundation for understanding exotic quantum phenomena in this emerging platform.

cond-mat.mes-hall↗