arXiv subjects

Jinxiu Zhao

Publications and source records attributed to Jinxiu Zhao.

2 recordsLinked to original sources

arXiv2026

High-Performance Scaled P-Type SnOx Transistor by Atomic Layer Deposition with CFET Integration

The development of high-performance p-type oxide semiconductors is essential for realizing complementary logic for monolithic 3D integration, yet p-type oxide semiconductors still exhibit substantially inferior performance compared with their n-type counterparts. In this work, we demonstrate high-performance p-type SnOx transistors by atomic layer deposition (ALD), as back-end-of-line compatible devices for monolithic 3D integration. The SnOx transistors exhibit high field-effect mobility of 6.9 cm2/Vs, low subthreshold swing (SS) of 185 mV/dec, decent on/off ratio (ION/IOFF) of 1.8*104 and high bias stability. By scaling the channel length down to 80 nm, a high on-current of 38.7 mA/mm at VDS of -1 V is achieved. It is understood that precursor and reaction engineering to suppress Sn4+ component in SnOx film are the key for performance enhancement. Furthermore, a complementary field-effect transistor with ALD SnOx p-FET vertically stacking on ALD In2O3 n-FET is also demonstrated, achieving maximum voltage gain of 21 V/V at VDD of 4 V. These findings suggest ALD SnOx as a promising candidate for scaled high-performance BEOL p-type transistors.

cond-mat.mtrl-sci↗

arXiv2025

Dielectric Deposition Enhanced Crystallization in Atomic-Layer-Deposited Indium Oxide Transistors Achieving High Gated-Hall Mobility Exceeding 100 cm2/Vs at Room Temperature

In this work, we report high-performance atomic-layer-deposited indium oxide (In2O3) transistors with high gated-Hall mobility ({\mu}H) exceeding 100 cm2/Vs at room temperature (RT). It is found that the deposition of top hafnium oxide (HfO2) above the In2O3 channel significantly enhances its crystallization, leading to an average grain size of 97.2 nm in a 4.2-nm In2O3 channel. The ALD of In2O3 exhibits an epitaxy-like growth behavior, with its (222) planes aligning parallel to the (111) planes of both the top and bottom HfO2 dielectrics. As a result, bottom-gate In2O3 transistors with a high {\mu}H of 100.9 cm2/Vs and a decent subthreshold swing (SS) of 94 mV/dec are achieved by gated-Hall measurement at RT. Furthermore, the devices maintain excellent performance at low temperatures, achieving a {\mu}H of 162.2 cm2/Vs at 100 K. Our study reveals the critical role of dielectric deposition induced crystallization in enhancing carrier transport and offers a scalable pathway toward high-mobility devices.

cond-mat.mtrl-sci↗