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Jiuming Liu

Publications and source records attributed to Jiuming Liu.

39 records · Page 3Linked to original sources

RegFormer: An Efficient Projection-Aware Transformer Network for Large-Scale Point Cloud Registration

Although point cloud registration has achieved remarkable advances in object-level and indoor scenes, large-scale registration methods are rarely explored. Challenges mainly arise from the huge point number, complex distribution, and outliers of outdoor LiDAR scans. In addition, most existing registration works generally adopt a two-stage paradigm: They first find correspondences by extracting discriminative local features and then leverage estimators (eg. RANSAC) to filter outliers, which are highly dependent on well-designed descriptors and post-processing choices. To address these problems, we propose an end-to-end transformer network (RegFormer) for large-scale point cloud alignment without any further post-processing. Specifically, a projection-aware hierarchical transformer is proposed to capture long-range dependencies and filter outliers by extracting point features globally. Our transformer has linear complexity, which guarantees high efficiency even for large-scale scenes. Furthermore, to effectively reduce mismatches, a bijective association transformer is designed for regressing the initial transformation. Extensive experiments on KITTI and NuScenes datasets demonstrate that our RegFormer achieves competitive performance in terms of both accuracy and efficiency.

cs.CV↗

Interfacial Resonance States-Induced Negative Tunneling Magneto-resistance in Orthogonally-Magnetized CoFeB/MgO/CoFeB

Magnetic tunneling junctions (MTJs) are essential for non-volatile magneto-resistive random access memory (MRAM) applications. Here, we report the observation of a large negative tunneling magneto-resistance (TMR) in the CoFeB/MgO/CoFeB system with an orthogonally-magnetized configuration. Through the thickness modulation of the MgO barrier, the negative TMR component can be enhanced up to 20% under a negative voltage bias. Moreover, the tunnel anisotropic magneto-resistance measurements unveil that the negative TMR component likely arises from the interfacial resonance states (IRS) in the minority band of the bottom ferromagnetic layer. Complementary first principle calculations further quantify the IRS location and strength with respect to the Fermi level position. Our work not only confirm the vital role of IRS in the electrical transport of MTJ, but also provide valuable insights for the design of new-generation voltage-controlled MRAM and related spintronic applications.

physics.app-ph↗

Room Temperature Gate Tunable Non Reciprocal Charge Transport in Lattice Matched InSb/CdTe Heterostructures

The manipulation of symmetry provides an effective way to tailor the physical orders in solid-state systems. With the breaking of both the inversion and time-reversal symmetries, non-reciprocal magneto-transport may emerge in assorted non-magnetic systems to enrich spintronic physics. Here, we report the observation of the uni-directional magneto-resistance (UMR) in the lattice-matched InSb/CdTe film up to room temperature. Benefiting from the strong built-in electric field of $0.13 \mathrm{~V} \cdot \mathrm{nm}^{-1}$ in the hetero-junction region, the resulting Rashba-type spin-orbit coupling and quantum confinement warrant stable angular-dependent second-order charge current with the non-reciprocal coefficient 1-2 orders of magnitude larger than most non-centrosymmetric materials at 298 K. More importantly, this heterostructure configuration enables highly-efficient gate tuning of the rectification response in which the enhancement of the UMR amplitude by 40% is realized. Our results advocate the narrow-gap semiconductor-based hybrid system with the robust two-dimensional interfacial spin texture as a suitable platform for the pursuit of controllable chiral spin-orbit devices and applications.

cond-mat.mes-hall↗