arXiv subjects

Joachim Mayer

Publications and source records attributed to Joachim Mayer.

At least 19 recordsLinked to original sources

arXiv2026

EBSD and Subtle Crystallographic Differences - A Study of Resolving Interlayer Spacings in Nb-Ni and Nb-Co mu-phases

In ordered intermetallics, slight variations in lattice site occupancy and specific interlayer spacings have been identified as the sources of significant changes in critical resolved shear stress and therefore how a given phase may affect alloy properties. So far, atom positions and lattice site occupancies have traditionally been characterised by high-resolution transmission electron microscopy (HR-TEM) and X-ray diffraction (XRD), which are methods that offer either local detail or high statistical significance but not both. Electron backscatter diffraction (EBSD), by contrast, provides high spatial resolution across large sample areas and therefore, has the potential to enable the local investigation of interlayer spacing and site lattice occupancy with improved statistical reliability. The objectives of the study are to benchmark EBSDs capability for resolving these subtle features and to correlate them with compositional and mechanical properties. In this case study, we therefore show that EBSD can resolve key crystallographic features of mu-phase intermetallics, specifically interlayer spacings. We combine pattern matching with large-scale dynamical simulations of template libraries guided by XRD based information on lattice parameters. For this, we generate structures that vary in the spacing between triple-layer and Kagome layer and in the site lattice occupancy of the 3a site. This approach successfully predicts the change of interlayer spacing between Kagome and triple layers in Nb-Co and Nb-Ni mu-phases, in good agreement with XRD and HR-TEM.

cond-mat.mtrl-sci↗

arXiv2026

Multi-Method Li Plating Characterization of a Commercial 26 Ah Li-Ion Pouch-Cell

Lithium (Li) plating on graphite is a significant degradation mechanism in Li-ion batteries. While numerous experimental techniques have been used to study Li plating in laboratory cells, investigations of commercial high-energy cells often rely on electrochemical methods. Here we present and classify various methods for detecting Li plating on a commercial A123 pouch cell. In a round robin study across multiple battery research laboratories, Li-plated graphitic electrode material was analyzed using electrochemical, microscopic, and spectroscopic methods capable of detecting metallic Li deposits. After cell opening, their overall distribution on the anode surface was examined using a flatbed scanner to ensure comparability of the samples. Optical and electron microscopy provided detailed surface and, in combination with a focused ion beam, subsurface structure and morphology. Spectroscopic methods confirmed the presence and onset of plated Li with varying sensitivity. Moreover, spectroscopic and imaging techniques were combined correlatively where possible. Availability and measurement duration of each technique was compared. Optical methods are fast and easy to use; thus, they are recommended for most samples, with spectroscopic confirmation reserved for reference samples. This multimodal study demonstrates a range of methods that can be used alone or in combination to qualitatively or quantitatively detect Li-plating.

cond-mat.mtrl-sci↗

arXiv2025

Reduced Variability in Threshold Switches Using Heterostructures of SiO${_x}$ and Vertically Aligned MoS${_2}$

Layered two-dimensional (2D) materials provide unique structural features, such as physical gaps between their layers that are only connected through van der Waals (vdW) forces. These vdW gaps can guide the migration of intercalated ions and thus regulate filament growth in resistive switching (RS) devices. Vertically aligned 2D materials and their heterostructures provide vdW gap-mediated ion transport in memristor crossbars, providing great potential for high-density integration and reliable RS performance. Nevertheless, the fundamental switching mechanisms and their contributions to the RS remain inadequately understood. In this work, we investigate silver (Ag) filament-based threshold switching (TS) in heterostructures comprising vertically aligned 2D molybdenum disulfide (VAMoS${_2}$) grown via sulfurization and silicon oxide (SiO${_x}$). Compared to SiO${_x}$-only devices, the SiO${_x}$/VAMoS${_2}$ devices exhibit TS with higher on-threshold and hold voltages, each approximately 0.4 V, faster switching times down to 356 ns under a 4 V pulse, and a lower cycle-to-cycle on-current variability of 3.0%. A physics-based, variability-aware model reveals that confined Ag ion migration within the vdW gaps in VAMoS${_2}$ forms ultrathin seed filaments, which guide filament growth in the SiO${_x}$ layer. These findings establish SiO${_x}$/VAMoS${_2}$ heterostructures as a promising concept for reliable TS in vertical device architectures for emerging memories and neuromorphic computing.

physics.app-ph↗

arXiv2025

Intermediate Resistive State in Wafer-Scale MoS${_2}$ Memristors through Lateral Silver Filament Growth for Artificial Synapse Applications

Memristors based on two-dimensional materials (2DMs) have garnered significant attention due to their fast resistive switching (RS) behavior and atomic-level thickness, which enables low power consumption, making them promising candidates for neuromorphic computing. Among these, memristors based on molybdenum disulfide (MoS${_2}$) have been extensively studied. Their RS has been attributed to the formation and rupture of conductive filaments (CFs). However, the underlying mechanism of filament formation remains underexplored, and the inherently stochastic nature of RS leads to high variability and limited reproducibility. Additionally, the lack of scalable fabrication techniques for 2DM-based memristors restricts their integration into standard semiconductor technology. Here, we demonstrate memristors based on metal-organic chemical vapor-deposited MoS${_2}$ on the wafer-scale. Our devices exhibit volatile and nonvolatile RS behavior, tunable by modulating the current compliance. Notably, we observe stable RS characteristics in an intermediate resistive state (IRS), featuring set and reset voltages within $\pm$1 V, an endurance exceeding 2500 cycles in direct current mode, and a state retention over 10${^6}$ s. The experimental data, complemented with simulations, suggest that the IRS originates from the lateral growth of the CF within the MoS${_2}$ layer. Furthermore, the devices successfully emulate synaptic plasticity with current responses on the microsecond timescale, highlighting their potential for large-scale integration in neuromorphic computing architectures.

physics.app-ph↗

arXiv2025

Threshold Switching in Vertically Aligned MoS${_2}$/SiO${_x}$ Heterostructures based on Silver Ion Migration

Threshold switching (TS) is a phenomenon where non-permanent changes in electrical resistance of a two-terminal device can be controlled by modulating the voltage bias. TS based on silver (Ag) conductive filaments has been observed in many materials, including layered two-dimensional (2D) transition metal dichalcogenides (TMDs). 2D TMDs are particularly promising for metal ion movement due to their van der Waals (vdW) gaps between their sheets, facilitating ion migration and filament formation without disturbing covalent chemical bonds. In this work, we demonstrate the heterostructure growth of vertically aligned molybdenum disulfide (VAMoS${_2}$) with an amorphous silicon oxide (SiO${_x}$) layer on top after sulfurization. We show that Ag ions migrate through this material stack, enabling TS. Our Ag/SiO${_x}$/VAMoS${_2}$/gold (Au) devices exhibit TS at low voltages of ~0.63 V, with high on-state currents over 200 ${\mu}$A and stable switching exceeding 10${^4}$ cycles. Moreover, we identify two rate-limiting steps for filament formation through a physics-based dynamical model and simulate the switching kinetics. Our devices show a fast on-switching time of 311 ns and spontaneous relaxation in 233 ns. These findings deepen the understanding of SiOx/MoS${_2}$-based RS devices and demonstrate the promise for applications in emerging memories and neuromorphic computing systems.

cond-mat.mtrl-sci↗

arXiv2025

Volatile and Nonvolatile Resistive Switching in Lateral 2D Molybdenum Disulfide-Based Memristive Devices

Developing electronic devices capable of emulating biological functions is essential for advancing brain-inspired computation paradigms such as neuromorphic computing. In recent years, two-dimensional materials have emerged as promising candidates for neuromorphic electronic devices. This work addresses the coexistence of volatile and nonvolatile resistive switching in lateral memristors based on molybdenum disulfide with silver as the active electrode. The fabricated devices exhibited switching voltages of ~0.16 V and ~0.52 V for volatile and nonvolatile operation, respectively, under direct-current measurements. They also displayed the essential synaptic functions of paired-pulse facilitation and short- and long-term plasticity under pulse stimulation. The operation mechanism was investigated by in-situ transmission electron microscopy, which showed lateral migration of silver ions along the molybdenum disulfide between electrodes. Based on the experimental data, a macroscopic semi-classical electron transport model was used to reproduce the current-voltage characteristics and support the proposed underlying switching mechanisms.

cond-mat.mtrl-sci↗

arXiv2025

Unraveling the dynamics of conductive filaments in MoS${_2}$ based memristors by operando transmission electron microscopy

Advanced operando transmission electron microscopy (TEM) techniques enable the observation of nanoscale phenomena in electrical devices during operation. They can be used to study the switching mechanisms in two-dimensional (2D) materials-based memristive devices, which is crucial to tailor their operating regimes and improve reliability and variability. Here, we investigate lateral memristive devices composed of 2D layered molybdenum disulfide (MoS${_2}$) with palladium (Pd) and silver (Ag) electrodes. We visualized the formation and migration of Ag conductive filaments (CFs) between the two electrodes under external bias voltage and their complete dissolution upon reversing the bias voltage polarity. The CFs exhibited a wide range of sizes, ranging from several Ångströms to tens of nanometers, and followed diverse pathways: along the MoS${_2}$ surfaces, within the van der Waals gap between MoS${_2}$ layers, and through the spacing between MoS${_2}$ bundles. Notably, the Ag electrode functioned as a reservoir for the CFs, as evidenced by the shrinking and growing of the Ag electrode upon switching. Our method enabled correlating the current-voltage responses with real-time TEM imaging, offering insights into failed and anomalous switching behavior, and providing clarity on the cycle-to-cycle variabilities. Our findings provide solid evidence for the electrochemical metallization mechanism, elucidate the formation dynamics of CFs, and reveal key parameters influencing the switching performance. Our approach can be extended to investigate similar memristive devices.

cond-mat.mtrl-sci↗

arXiv2024

Volatile MoS${_2}$ Memristors with Lateral Silver Ion Migration for Artificial Neuron Applications

Layered two-dimensional (2D) semiconductors have shown enhanced ion migration capabilities along their van der Waals (vdW) gaps and on their surfaces. This effect can be employed for resistive switching (RS) in devices for emerging memories, selectors, and neuromorphic computing. To date, all lateral molybdenum disulfide (MoS${_2}$)-based volatile RS devices with silver (Ag) ion migration have been demonstrated using exfoliated, single-crystal MoS${_2}$ flakes requiring a forming step to enable RS. Here, we present volatile RS with multilayer MoS${_2}$ grown by metal-organic chemical vapor deposition (MOCVD) with repeatable forming-free operation. The devices show highly reproducible volatile RS with low operating voltages of approximately 2 V and fast switching times down to 130 ns considering their micrometer scale dimensions. We investigate the switching mechanism based on Ag ion surface migration through transmission electron microscopy, electronic transport modeling, and density functional theory. Finally, we develop a physics-based compact model and explore the implementation of our volatile memristors as artificial neurons in neuromorphic systems.

physics.app-ph↗

arXiv2024

Tunable Doping and Mobility Enhancement in 2D Channel Field-Effect Transistors via Damage-Free Atomic Layer Deposition of AlOX Dielectrics

Two-dimensional materials (2DMs) have been widely investigated because of their potential for heterogeneous integration with modern electronics. However, several major challenges remain, such as the deposition of high-quality dielectrics on 2DMs and the tuning of the 2DM doping levels. Here, we report a scalable plasma-enhanced atomic layer deposition (PEALD) process for direct deposition of a nonstoichiometric aluminum oxide (AlOX) dielectric, overcoming the damage issues associated with conventional methods. Furthermore, we control the thickness of the dielectric layer to systematically tune the doping level of 2DMs. The experimental results demonstrate successful deposition without detectable damage, as confirmed by Raman spectroscopy and electrical measurements. Our method enables tuning of the Dirac and threshold voltages of back-gated graphene and MoS${_2}$ field-effect transistors (FETs), respectively, while also increasing the charge carrier mobility in both device types. We further demonstrate the method in top-gated MoS${_2}$ FETs with double-stack dielectric layers (AlOX+Al${_2}$O${_3}$), achieving critical breakdown field strengths of 7 MV/cm and improved mobility compared with the back gate configuration. In summary, we present a PEALD process that offers a scalable and low-damage solution for dielectric deposition on 2DMs, opening new possibilities for precise tuning of device characteristics in heterogeneous electronic circuits.

physics.app-ph↗

arXiv2024

Influence of chemical composition on the room temperature plas-ticity of C15 Ca-Al-Mg Laves phases

The influence of chemical composition changes on the room temperature mechanical proper-ties in the C15 CaAl2 Laves phase were investigated in two off-stoichiometric compositions with 5.7 at.-% Mg addition (Ca33Al61Mg6) and 10.8 at.-% Mg and 3.0 at.-% Ca addition (Ca36Al53Mg11) and compared to the stoichiometric (Ca33Al67) composition. Cubic Ca-Al-Mg Laves phases with multiple crystallographic orientations were characterised and deformed using nanoindentation. The hardness and indentation modulus were measured to be 4.1 +- 0.3 GPa and 71.3 +- 1.5 GPa for Ca36Al53Mg11, 4.6 +- 0.2 GPa and 80.4 +- 3.8 GPa for Ca33Al61Mg6 and 4.9 +- 0.3 GPa and 85.5 +- 4.0 GPa for Ca33Al67, respectively. The resulting surface traces as well as slip and crack planes, were distinguished on the indentation surfac-es, revealing the activation of several different {11n} slip systems, as further confirmed by conventional transmission electron microscopic observations. Additionally, the deformation mechanisms and corresponding energy barriers of activated slip systems were evaluated by atomistic simulations.

cond-mat.mtrl-sci↗

arXiv2023

Atomic diffusion-induced polarization and superconductivity in topological insulator-based heterostructures

The proximity effect at a highly transparent interface of an s-wave superconductor (S) and a topological insulator (TI) provides a promising platform to create Majorana zero modes in artificially designed heterostructures. However, structural and chemical issues pertinent to such interfaces are poorly explored so far. Here, we report the discovery of Pd diffusion induced polarization at interfaces between superconductive Pd$_{1+x}$(Bi$_{0.4}$Te$_{0.6}$)$_2$ (xPBT, $0\le x \le 1$) and Pd-intercalated Bi$_2$Te$_3$ by using atomic-resolution scanning transmission electron microscopy. Our quantitative image analysis reveals that nanoscale lattice strain and QL polarity synergistically suppress and promote the Pd diffusion at the normal and parallel interfaces, formed between Te-Pd-Bi triple layers (TLs) and Te-Bi-Te-Bi-Te quintuple layers (QLs), respectively. Further, our first-principles calculations unveil that the superconductivity of xPBT phase and topological nature of Pd-intercalated Bi$_2$Te$_3$ phase are robust against the broken inversion symmetry. These findings point out the necessity of considering coexistence of electric polarization with superconductivity and topology in such S-TI systems.

cond-mat.mtrl-sci↗

arXiv2023

Non-Volatile Resistive Switching of Polymer Residues in 2D Material Memristors

Two-dimensional (2D) materials are popular candidates for emerging nanoscale devices, including memristors. Resistive switching (RS) in such 2D material memristors has been attributed to the formation and dissolution of conductive filaments created by the diffusion of metal ions between the electrodes. However, the area-scalable fabrication of patterned devices involves polymers that are difficult to remove from the 2D material interfaces without damage. Remaining polymer residues are often overlooked when interpreting the RS characteristics of 2D material memristors. Here, we demonstrate that the parasitic residues themselves can be the origin of RS. We emphasize the necessity to fabricate appropriate reference structures and employ atomic-scale material characterization techniques to properly evaluate the potential of 2D materials as the switching layer in vertical memristors. Our polymer-residue-based memristors exhibit RS typical for a filamentary mechanism with metal ion migration, and their performance parameters are strikingly similar to commonly reported 2D material memristors. This reveals that the exclusive consideration of electrical data without a thorough verification of material interfaces can easily lead to misinterpretations about the potential of 2D materials for memristor applications.

cond-mat.mes-hall↗

arXiv2023

Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes

The two-dimensional (2D) insulating material hexagonal boron nitride (h BN) has attracted much attention as the active medium in memristive devices due to its favorable physical properties, among others, a wide bandgap that enables a large switching window. Metal filament formation is frequently suggested for h-BN devices as the resistive switching (RS) mechanism, usually supported by highly specialized methods like conductive atomic force microscopy (C-AFM) or transmission electron microscopy (TEM). Here, we investigate the switching of multilayer hexagonal boron nitride (h-BN) threshold memristors with two nickel (Ni) electrodes through their current conduction mechanisms. Both the high and the low resistance states are analyzed through temperature-dependent current-voltage measurements. We propose the formation and retraction of nickel filaments along boron defects in the h-BN film as the resistive switching mechanism. We corroborate our electrical data with TEM analyses to establish temperature-dependent current-voltage measurements as a valuable tool for the analysis of resistive switching phenomena in memristors made of 2D materials. Our memristors exhibit a wide and tunable current operation range and low stand-by currents, in line with the state of the art in h-BN-based threshold switches, a low cycle-to-cycle variability of 5%, and a large On/Off ratio of 10${^7}$.

physics.app-ph↗

arXiv2022

Origin and Quantitative Description of the NESSIAS Effect at Si Nanostructures

The electronic structure of low nanoscale (LNS) intrinsic silicon (i-Si) embedded in SiO2 vs. Si3N4 shifts away from vs. towards the vacuum level Evac, as described by the Nanoscale Electronic Structure Shift Induced by Anions at Surfaces (NESSIAS). Here, we fully explain the NESSIAS based on the quantum chemical properties of the elements involved. Deriving an analytic parameter Lambda to predict the highest occupied molecular orbital energy of Si nanocrystals (NCs), we use various hybrid-DFT methods and NC sizes to verify the accuracy of Lambda. We report on first experimental data of Si nanowells (NWells) embedded in SiO2 vs. Si3N4 by X-ray absorption spectroscopy in total fluorescence yield mode (XAS-TFY) which are complemented by ultraviolet photoelectron spectroscopy (UPS), characterizing their conduction band and valence band edge energies E_C and E_V, respectively. Scanning the valence band sub-structure by UPS over NWell thickness, we derive an accurate estimate of EV shifted purely by spatial confinement, and thus the actual E_V shift due to NESSIAS. For 1.9 nm thick NWells in SiO2 vs. Si3N4, we get offsets of Delta E_C = 0.56 eV and Delta E_V = 0.89 eV, demonstrating a type II homojunction in LNS i-Si. This p/n junction generated by the NESSIAS eliminates any deteriorating impact of impurity dopants, offering undoped ultrasmall Si electronic devices with much reduced physical gate lengths and CMOS-compatible materials.

cond-mat.mtrl-sci↗

arXiv2022

Proximity-induced superconductivity in (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ topological-insulator nanowires

When a topological insulator is made into a nanowire, the interplay between topology and size quantization gives rise to peculiar one-dimensional states whose energy dispersion can be manipulated by external fields. In the presence of proximity-induced superconductivity, these 1D states offer a tunable platform for Majorana zero modes. While the existence of such peculiar 1D states has been experimentally confirmed, the realization of robust proximity-induced superconductivity in topological-insulator nanowires remains a challenge. Here, we report the realization of superconducting topological-insulator nanowires based on (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ (BST) thin films. When two rectangular pads of palladium are deposited on a BST thin film with a separation of 100--200 nm, the BST beneath the pads is converted into a superconductor, leaving a nanowire of BST in-between. We found that the interface is epitaxial and has a high electronic transparency, leading to a robust superconductivity induced in the BST nanowire. Due to its suitable geometry for gate-tuning, this platform is promising for future studies of Majorana zero modes.

cond-mat.mes-hall↗

arXiv2021

Correlating Nanocrystalline Structure with Electronic Properties in 2D Platinum Diselenide

Platinum diselenide (PtSe${_2}$) is a two-dimensional (2D) material with outstanding electronic and piezoresistive properties. The material can be grown at low temperatures in a scalable manner which makes it extremely appealing for many potential electronics, photonics, and sensing applications. Here, we investigate the nanocrystalline structure of different PtSe${_2}$ thin films grown by thermally assisted conversion (TAC) and correlate them with their electronic and piezoresistive properties. We use scanning transmission electron microscopy for structural analysis, X-ray photoelectron spectroscopy (XPS) for chemical analysis, and Raman spectroscopy for phase identification. Electronic devices are fabricated using transferred PtSe${_2}$ films for electrical characterization and piezoresistive gauge factor measurements. The variations of crystallite size and their orientations are found to have a strong correlation with the electronic and piezoresistive properties of the films, especially the sheet resistivity and the effective charge carrier mobility. Our findings may pave the way for tuning and optimizing the properties of TAC-grown PtSe${_2}$ towards numerous applications.

cond-mat.mtrl-sci↗

arXiv2021

Curvature-mediated spin textures in magnetic multi-layered nanotubes

The scientific and technological exploration of artificially designed three-dimensional magnetic nanostructures opens the path to exciting novel physical phenomena, originating from the increased complexity in spin textures, topology, and frustration in three dimensions. Theory predicts that the equilibrium magnetic ground state of two-dimensional systems which reflects the competition between symmetric (Heisenberg) and antisymmetric (Dzyaloshinskii-Moriya interaction (DMI)) exchange interaction is significantly modified on curved surfaces when the radius of local curvature becomes comparable to fundamental magnetic length scales. Here, we present an experimental study of the spin texture in an 8 nm thin magnetic multilayer with growth-induced in-plane anisotropy and DMI deposited onto the curved surface of a 1.8 μm long non-magnetic carbon nanowire with a 67 nm radius. Using magnetic soft x-ray tomography the three-dimensional spin configuration in this nanotube was retrieved with about 30nm spatial resolution. The transition between two vortex configurations on the two ends of the nanotube with opposite circulation occurs through a domain wall that is aligned at an inclined angle relative to the wire axis. Three-dimensional micromagnetic simulations support the experimental observations and represent a visualization of the curvature-mediated DMI. They also allow a quantitative estimate of the DMI value for the magnetic multilayered nanotube.

cond-mat.mes-hall↗

arXiv2020

Multiple polarization orders in individual twinned colloidal nanocrystals of centrosymmetric HfO2

Spontaneous polarization is essential for ferroelectric functionality in non-centrosymmetric crystals. High-integration-density ferroelectric devices require the stabilization of ferroelectric polarization in small volumes. Here, atomic-resolution transmission electron microscopy imaging reveals that twinning-induced symmetry breaking in colloidal nanocrystals of centrosymmetric HfO2 leads to the formation of multiple polarization orders, which are associated with sub-nanometer ferroelectric and antiferroelectric phases. The minimum size limit of the ferroelectric phase is found to be ~4 nm3. Density functional theory calculations indicate that transformations between the ferroelectric and antiferroelectric phases can be modulated by lattice strain and are energetically possible in either direction. The results of this work provide a route towards applications of HfO2 nanocrystals in information storage at densities that are more than an order of magnitude higher than the scaling limit defined by the nanocrystal size.

cond-mat.mtrl-sci↗