arXiv subjects

Joe McGlone

Publications and source records attributed to Joe McGlone.

6 recordsLinked to original sources

arXiv2026

AlN Gate Interlayer for UWBG AlGaN Transistors with Breakdown Field >6.9 MV/cm and PFOM >1.8 GW/cm2

We report the demonstration of regrown epitaxial AlN gate interlayers with ultra-wide bandgap (UWBG) AlGaN polarization-graded field effect transistors (PolFETs). The introduction of the epitaxial AlN gate interlayer enables significant improvement in breakdown strength, with average breakdown field exceeding 6.94 MV/cm, which represents state-of-the-art for lateral field effect transistors, while maintaining excellent on-state current density exceeding 1 A/mm. The integration of epitaxial AlN enables state-of-the-art power-switching figure of merit exceeding 1.87 GW/cm2 at a breakdown voltage exceeding 1.45 kV. This work shows the potential of UWBG AlGaN for next-generation high-power switching and RF applications with enhanced device performance established by a high-quality epitaxially regrown AlN gate interlayer.

physics.app-ph↗

arXiv2026

Electrostatic Effects of Self Trapped Holes in Gallium Oxide Devices

Gallium oxide is an ultra-wide bandgap semiconductor with exceptional properties for power electronics and UV-C optoelectronics, but its behavior under illumination remains poorly understood. In this work, we investigate how optically generated self-trapped holes influence electrostatics and current conduction in gallium oxide devices. Using a vertical Schottky photodiode with a semi-transparent Ni anode, we performed capacitance-voltage, current-voltage, and temperature-dependent I-V measurements under dark and above-bandgap illumination. Analysis of photocurrent gain reveals that conventional image-force barrier-lowering models require unrealistically high interfacial electric fields, suggesting the presence of an alternative mechanism. By applying Fowler-Nordheim tunneling theory, we reconcile measured photocurrents and photo-capacitance results with physically plausible fields and quantify the two-dimensional concentration of self-trapped holes. Our findings demonstrate that illumination-induced charge significantly alters device electrostatics. Understanding this tunneling-based photocurrent gain mechanism is critical for designing gallium oxide devices for UV-C detectors and power electronics.

cond-mat.mtrl-sci↗

arXiv2019

Metal$/BaTiO_{3}/β-Ga_{2}O_{3}$ Dielectric Heterojunction Diode with 5.7 MV/cm Breakdown Field

Wide and ultra-wide band gap semiconductors can provide excellent performance due to their high energy band gap, which leads to breakdown electric fields that are more than an order of magnitude higher than conventional silicon electronics. In materials where p-type doping is not available, achieving this high breakdown field in a vertical diode or transistor is very challenging. We propose and demonstrate the use of dielectric heterojunctions that use extreme permittivity materials to achieve high breakdown field in a unipolar device. We demonstrate the integration of a high permittivity material BaTiO3 with n-type $β$-Ga2O3 to enable 5.7 MV/cm average electric field and 7 MV/cm peak electric field at the device edge, while maintaining forward conduction with relatively low on-resistance and voltage loss. The proposed dielectric heterojunction could enable new design strategies to achieve theoretical device performance limits in wide and ultra-wide band gap semiconductors where bipolar doping is challenging.

cond-mat.mtrl-sci↗

arXiv2019

Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3

We report on the origin of high Si flux observed during the use of Si as a doping source in plasma assisted MBE growth of \b{eta}-Ga2O3. We show on the basis of secondary ion mass spectroscopy (SIMS) analysis that Si flux is not limited by the vapor pressure of Si but by the formation of volatile SiO. The low sublimation energy of SiO leads to weak dependence of the SiO flux of Si cell temperature and a strong dependence on the background oxygen pressure. Extended exposure to activated oxygen results in reduction of SiO flux due to the formation of SiO2 on the Si surface. The work reported provides key understanding for incorporating Si into future oxide-based semiconductor heterostructure and device MBE growth.

physics.app-ph↗

arXiv2019

Velocity Saturation in La-doped BaSnO3 Thin Films

BaSnO_{3}, a high mobility perovskite oxide, is an attractive material for oxide-based electronic devices. However, in addition to low-field mobility, high-field transport properties such as the saturation velocity of carriers play a major role in determining device performance. We report on the experimental measurement of electron saturation velocity in La-doped BaSnO_{3} thin films for a range of doping densities. Predicted saturation velocities based on a simple LO-phonon emission model using an effective LO phonon energy of 120 meV show good agreement with measurements of velocity saturation in La-doped BaSnO_{3} films.. Density-dependent saturation velocity in the range of 1.6x10^{7} cm/s reducing to 2x10^{6} cm/s is predicted for δ-doped BaSnO3 channels with carrier densities ranging from 10^{13} cm^{-2} to 2x10^{14} cm^{-2} respectively. These results are expected to aid the informed design of BaSnO3 as the active material for high-charge density electronic transistors.

cond-mat.mtrl-sci↗

arXiv2017

Modulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor

Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of modulation-doped two-dimensional electron gas (2DEG) at beta(Al0.2Ga0.8)2O3/ Ga2O3 heterojunction using silicon delta doping. The formation of a 2DEG was confirmed using capacitance voltage measurements. A modulation-doped 2DEG channel was used to realize a modulation-doped field-effect transistor. The demonstration of modulation doping in the beta-(Al0.2Ga0.8)2O3/ Ga2O3 material system could enable heterojunction devices for high performance electronics.

cond-mat.mes-hall↗