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arXiv · 1706.09492

Modulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor

Sriram Krishnamoorthy·Zhanbo Xia·Chandan Joishi·Yuewei Zhang·Joe McGlone·Jared Johnson·Mark Brenner·Aaron R. Arehart·Jinwoo Hwang·Saurabh Lodha·Siddharth Rajan
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Abstract

Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of modulation-doped two-dimensional electron gas (2DEG) at beta(Al0.2Ga0.8)2O3/ Ga2O3 heterojunction using silicon delta doping. The formation of a 2DEG was confirmed using capacitance voltage measurements. A modulation-doped 2DEG channel was used to realize a modulation-doped field-effect transistor. The demonstration of modulation doping in the beta-(Al0.2Ga0.8)2O3/ Ga2O3 material system could enable heterojunction devices for high performance electronics.

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Sriram Krishnamoorthy, Zhanbo Xia, Chandan Joishi, Yuewei Zhang, Joe McGlone, Jared Johnson, Mark Brenner, Aaron R. Arehart, Jinwoo Hwang, Saurabh Lodha, Siddharth Rajan. 2017-06-28. Modulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor. https://doi.org/10.1063/1.4993569

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