arXiv subjects

Joel R. Wendt

Publications and source records attributed to Joel R. Wendt.

12 recordsLinked to original sources

arXiv2022

A Compact Cold-Atom Interferometer with a High Data-Rate Grating Magneto-Optical Trap and a Photonic-Integrated-Circuit-Compatible Laser System

The extreme miniaturization of a cold-atom interferometer accelerometer requires the development of novel technologies and architectures for the interferometer subsystems. Here we describe several component technologies and a laser system architecture to enable a path to such miniaturization. We developed a custom, compact titanium vacuum package containing a microfabricated grating chip for a tetrahedral grating magneto-optical trap (GMOT) using a single cooling beam. In addition, we designed a multi-channel photonic-integrated-circuit-compatible laser system implemented with a single seed laser and single sideband modulators in a time-multiplexed manner, reducing the number of optical channels connected to the sensor head. In a compact sensor head containing the vacuum package, sub-Doppler cooling in the GMOT produces 15 uK temperatures, and the GMOT can operate at a 20 Hz data rate. We validated the atomic coherence with Ramsey interferometry using microwave spectroscopy, then demonstrated a light-pulse atom interferometer in a gravimeter configuration for a 10 Hz measurement data rate and T = 0 - 4.5 ms interrogation time, resulting in $Δ$ g / g = 2.0e-6. This work represents a significant step towards deployable cold-atom inertial sensors under large amplitude motional dynamics.

physics.atom-ph↗

arXiv2019

Spin-orbit Interactions for Singlet-Triplet Qubits in Silicon

Spin-orbit coupling is relatively weak for electrons in bulk silicon, but enhanced interactions are reported in nanostructures such as the quantum dots used for spin qubits. These interactions have been attributed to various dissimilar interface effects, including disorder or broken crystal symmetries. In this Letter, we use a double-quantum-dot qubit to probe these interactions by comparing the spins of separated singlet-triplet electron pairs. We observe both intravalley and intervalley mechanisms, each dominant for [110] and [100] magnetic field orientations, respectively, that are consistent with a broken crystal symmetry model. We also observe a third spin-flip mechanism caused by tunneling between the quantum dots. This improved understanding is important for qubit uniformity, spin control and decoherence, and two-qubit gates.

cond-mat.mes-hall↗

arXiv2018

All-electrical universal control of a double quantum dot qubit in silicon MOS

Qubits based on transistor-like Si MOS nanodevices are promising for quantum computing. In this work, we demonstrate a double quantum dot spin qubit that is all-electrically controlled without the need for any external components, like micromagnets, that could complicate integration. Universal control of the qubit is achieved through spin-orbit-like and exchange interactions. Using single shot readout, we show both DC- and AC-control techniques. The fabrication technology used is completely compatible with CMOS.

cond-mat.mes-hall↗

arXiv2018

High-fidelity single-shot readout for a spin qubit via an enhanced latching mechanism

The readout of semiconductor spin qubits based on spin blockade is fast but suffers from a small charge signal. Previous work suggested large benefits from additional charge mapping processes, however uncertainties remain about the underlying mechanisms and achievable fidelity. In this work, we study the single-shot fidelity and limiting mechanisms for two variations of an enhanced latching readout. We achieve average single-shot readout fidelities > 99.3% and > 99.86% for the conventional and enhanced readout respectively, the latter being the highest to date for spin blockade. The signal amplitude is enhanced to a full one-electron signal while preserving the readout speed. Furthermore, layout constraints are relaxed because the charge sensor signal is no longer dependent on being aligned with the conventional (2, 0) - (1, 1) charge dipole. Silicon donor-quantum-dot qubits are used for this study, for which the dipole insensitivity substantially relaxes donor placement requirements. One of the readout variations also benefits from a parametric lifetime enhancement by replacing the spin-relaxation process with a charge-metastable one. This provides opportunities to further increase the fidelity. The relaxation mechanisms in the different regimes are investigated. This work demonstrates a readout that is fast, has one-electron signal and results in higher fidelity. It further predicts that going beyond 99.9% fidelity in a few microseconds of measurement time is within reach.

cond-mat.mes-hall↗

arXiv2017

Coherent coupling between a quantum dot and a donor in silicon

Individual donors in silicon chips are used as quantum bits with extremely low error rates. However, physical realizations have been limited to one donor because their atomic size causes fabrication challenges. Quantum dot qubits, in contrast, are highly adjustable using electrical gate voltages. This adjustability could be leveraged to deterministically couple donors to quantum dots in arrays of qubits. In this work, we demonstrate the coherent interaction of a $^{31}$P donor electron with the electron of a metal-oxide-semiconductor quantum dot. We form a logical qubit encoded in the spin singlet and triplet states of the two-electron system. We show that the donor nuclear spin drives coherent rotations between the electronic qubit states through the contact hyperfine interaction. This provides every key element for compact two-electron spin qubits requiring only a single dot and no additional magnetic field gradients, as well as a means to interact with the nuclear spin qubit.

cond-mat.mes-hall↗

arXiv2017

Probing low noise at the MOS interface with a spin-orbit qubit

The silicon metal-oxide-semiconductor (MOS) material system is technologically important for the implementation of electron spin-based quantum information technologies. Researchers predict the need for an integrated platform in order to implement useful computation, and decades of advancements in silicon microelectronics fabrication lends itself to this challenge. However, fundamental concerns have been raised about the MOS interface (e.g. trap noise, variations in electron g-factor and practical implementation of multi-QDs). Furthermore, two-axis control of silicon qubits has, to date, required the integration of non-ideal components (e.g. microwave strip-lines, micro-magnets, triple quantum dots, or introduction of donor atoms). In this paper, we introduce a spin-orbit (SO) driven singlet-triplet (ST) qubit in silicon, demonstrating all-electrical two-axis control that requires no additional integrated elements and exhibits charge noise properties equivalent to other more model, but less commercially mature, semiconductor systems. We demonstrate the ability to tune an intrinsic spin-orbit interface effect, which is consistent with Rashba and Dresselhaus contributions that are remarkably strong for a low spin-orbit material such as silicon. The qubit maintains the advantages of using isotopically enriched silicon for producing a quiet magnetic environment, measuring spin dephasing times of 1.6 $μ$s using 99.95% $^{28}$Si epitaxy for the qubit, comparable to results from other isotopically enhanced silicon ST qubit systems. This work, therefore, demonstrates that the interface inherently provides properties for two-axis control, and the technologically important MOS interface does not add additional detrimental qubit noise.

cond-mat.mes-hall↗

arXiv2016

Broken symmetry dielectric resonators for high quality-factor Fano metasurfaces

We present a new approach to dielectric metasurface design that relies on a single resonator per unit cell and produces robust, high quality-factor Fano resonances. Our approach utilizes symmetry breaking of highly symmetric resonator geoemetries, such as cubes, to induce couplings between the otherwise orthogonal resonator modes. In particular, we design perturbations that couple "bright" dipole modes to "dark" dipole modes whose radiative decay is suppressed by local field effects in the array. Our approach is widely scalable from the near-infrared to radio frequencies. We first unravel the Fano resonance behavior through numerical simulations of a germanium resonator-based metasurface that achieved a quality-factor of ~1300 at ~10.8 um. Then, we present two experimental demonstrations operating in the near-infrared (~1 um): a silicon-based implementation that achieved a quality-factor of ~350; and a gallium arsenide-based structure that achieves a quality-factor of ~600 - the highest near-infrared quality-factor experimentally demonstrated to date with this kind of metasurfaces. Importantly, large electromagnetic field enhancements appear within the resonators at the Fano resonant frequencies. We envision that combining high-quality factor, high field enhancement resonances with nonlinear and active/gain materials such as gallium arsenide will lead to new classes of active optical devices.

physics.optics↗

arXiv2014

Spontaneous emission in a silicon charge qubit

The interaction between a qubit and its environment provides a channel for energy relaxation which has an energy-dependent timescale governed by the specific coupling mechanism. We measure the rate of inelastic decay in a Si MOS double quantum dot (DQD) charge qubit through sensing the charge state's response to non-adiabatic driving of its excited state population. The charge distribution is sensed remotely in the weak measurement regime. We extract emission rates down to kHz frequencies by measuring the variation of the non-equilibrium charge occupancy as a function of amplitude and dwell times between non-adiabatic pulses. Our measurement of the energy-dependent relaxation rate provides a fingerprint of the relaxation mechanism, indicating that relaxation rates for this Si MOS DQD are consistent with coupling to deformation acoustic phonons.

quant-ph↗

arXiv2014

Optical Magnetic Mirrors without Metals

The reflection of an optical wave from a metal, arising from strong interactions between the optical electric field and the free carriers of the metal, is accompanied by a phase reversal of the reflected electric field. A far less common route to achieve high reflectivity exploits strong interactions between the material and the optical magnetic field to produce a magnetic mirror which does not reverse the phase of the reflected electric field. At optical frequencies, the magnetic properties required for strong interaction can only be achieved through the use of artificially tailored materials. Here we experimentally demonstrate, for the first time, the magnetic mirror behavior of a low-loss, all-dielectric metasurface at infrared optical frequencies through direct measurements of the phase and amplitude of the reflected optical wave. The enhanced absorption and emission of transverse electric dipoles placed very close to magnetic mirrors can lead to exciting new advances in sensors, photodetectors, and light sources.

physics.optics↗

arXiv2011

Infrared Dielectric Resonator Metamaterial

We demonstrate, for the first time, an all-dielectric metamaterial resonator in the mid-wave infrared based on high-index tellurium cubic inclusions. Dielectric resonators are desirable compared to conventional metallo-dielectric metamaterials at optical frequencies as they are largely angular invariant, free of ohmic loss, and easily integrated into three-dimensional volumes. With these low-loss, isotropic elements, disruptive optical metamaterial designs, such as wide-angle lenses and cloaks, can be more easily realized.

physics.optics↗

arXiv2011

Interaction between Metamaterial Resonators and Inter-subband transitions in Semiconductor Quantum Wells

We report on the coupling and interaction between the fundamental resonances of planar metamaterials (split ring resonators) and inter-subband transitions in GaAs/AlGaAs quantum wells structures in the mid-infrared. An incident field polarized parallel to the sample surface is converted by the metamaterial resonators into a field with a finite component polarized normal to the surface, and interacts strongly with the large dipole moment associated with quantum well inter-subband transitions.

physics.optics↗

arXiv2010

Integration of fluorescence collection optics with a microfabricated surface electrode ion trap

We have successfully demonstrated an integrated optical system for collecting the fluorescence from a trapped ion. The system, consisting of an array of transmissive, dielectric micro-optics and an optical fiber array, has been intimately incorporated into the ion-trapping chip without negatively impacting trapping performance. Epoxies, vacuum feedthrough, and optical component materials were carefully chosen so that they did not degrade the vacuum environment, and we have demonstrated light detection as well as ion trapping and shuttling behavior comparable to trapping chips without integrated optics, with no modification to the control voltages of the trapping chip.

physics.ins-det↗