All-electrical universal control of a double quantum dot qubit in silicon MOS

Patrick Harvey-Collard; Ryan M. Jock; N. Tobias Jacobson; Andrew D. Baczewski; Andrew M. Mounce; Matthew J. Curry; Daniel R. Ward; John M. Anderson; Ronald P. Manginell; Joel R. Wendt; Martin Rudolph; Tammy Pluym; Michael P. Lilly; Michel Pioro-Ladrière; Malcolm S. Carroll

doi:10.1109/iedm.2017.8268507

arXiv · 1802.02117

All-electrical universal control of a double quantum dot qubit in silicon MOS

Patrick Harvey-Collard·Ryan M. Jock·N. Tobias Jacobson·Andrew D. Baczewski·Andrew M. Mounce·Matthew J. Curry·Daniel R. Ward·John M. Anderson·Ronald P. Manginell·Joel R. Wendt·Martin Rudolph·Tammy Pluym·Michael P. Lilly·Michel Pioro-Ladrière·Malcolm S. Carroll

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Abstract

Qubits based on transistor-like Si MOS nanodevices are promising for quantum computing. In this work, we demonstrate a double quantum dot spin qubit that is all-electrically controlled without the need for any external components, like micromagnets, that could complicate integration. Universal control of the qubit is achieved through spin-orbit-like and exchange interactions. Using single shot readout, we show both DC- and AC-control techniques. The fabrication technology used is completely compatible with CMOS.

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Patrick Harvey-Collard, Ryan M. Jock, N. Tobias Jacobson, Andrew D. Baczewski, Andrew M. Mounce, Matthew J. Curry, Daniel R. Ward, John M. Anderson, Ronald P. Manginell, Joel R. Wendt, Martin Rudolph, Tammy Pluym, Michael P. Lilly, Michel Pioro-Ladrière, Malcolm S. Carroll. 2018-02-06. All-electrical universal control of a double quantum dot qubit in silicon MOS. https://doi.org/10.1109/iedm.2017.8268507

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