arXiv subjects

John F. Sevic

Publications and source records attributed to John F. Sevic.

3 recordsLinked to original sources

arXiv2025

A Morphologically Self-Consistent Phase Field Model for the Computational Study of Memristive Thin Film Current-Voltage Hysteresis

A multiphysics phase field model is used for the computational study of memristive thin film morphology and current-voltage hysteresis. In contrast to previous computational methods, no requirements are made on conducting filament geometry. Our method correctly predicts conducting filaments evolve on thermodynamic paths that are energetically favored due to stochastic structural and chemical variations naturally occurring at the atomic-level, due to both latent and intentional fabrication effects. These results have significant implications for the computational design of a broad class of memristive thin films, enabling practical wafer-scale mapping, uniformity, and endurance analysis and optimization.

cond-mat.mtrl-sci↗

arXiv2023

Resistive Switching Conducting Filament Electroformation with an Electrothermal Phase Field Method

A phase field method self-consistently coupled to continuum heat transport and charge conservation is used to simulate conducting filament dynamical evolution and nanostructure of electroformed resistive switching thin films. Our method does not require a pre-defined idealized conducting filament, as previous methods do, instead treating its dynamical evolution as a stochastic diffuse interface problem subject to a variational principle. Our simulation results agree well with available experimental observations, correctly reproducing electroformed conducting filament nanostructure exhibited by a variety of resistive switching thin films.

physics.app-ph↗

arXiv2019

A Computational Phase Field Study of Conducting Channel Formation in Dielectric Thin Films: A View Towards the Physical Origins of Resistive Switching

A phase field method is used to computationally study conducting channel morphology of resistive switching thin film structures. Our approach successfully predicts the formation of conducting channels in typical dielectric thin film structures, comparable to a range of resistive switches, offering an alternative computational formulation based on metastable states treated at the atomic scale. In contrast to previous resistive switching thin film models, our formulation makes no a priori assumptions on conducting channel morphology and its fundamental transport mechanisms.

physics.app-ph↗