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Juan Bisquert

Publications and source records attributed to Juan Bisquert.

14 recordsLinked to original sources

Making the Graph Laplacian Physical: Multiscale Coarse-Graining in Electrical Oscillator Networks

Spectral gaps are widely interpreted as signatures of collective organization, yet it is rarely clear whether the resulting modes correspond to physical variables or merely to convenient mathematical coordinates. Here we show that, in resistor-coupled LC networks, the graph Laplacian defines an experimentally accessible hierarchy of electrical descriptions. Its eigenvectors become measurable voltage patterns, while its eigenvalues quantify the coupling-induced resistive damping of those patterns. When coupling is strong within regions and weak between them, microscopic voltages collapse into nested collective variables. A network of 1002 resonators reduces first to 42 regional voltages and then to four geometry-controlled global modes. Summing the microscopic Kirchhoff equations produces a directly constructible 42-node RLC circuit, without parameter fitting, that reproduces regional dynamics with 1.4 to 4.6% global RMS error. Finer modal coordinates improve accuracy but no longer correspond generally to simple resistor graphs. Robustness tests show that the regional level survives substantial conductance disorder and internal rewiring, but weakens when perturbations impair mixing within a region; changes in interregional connectivity selectively disrupt the global level. Thus the Laplacian spectrum becomes a physical design principle: it identifies which collective electrical variables emerge, how they can be constructed, and when they provide an adequate reduced description.

physics.app-ph

Noise-Resilient Detection of Neuronal Spikes by a Hopf-Bifurcation Device

Detecting weak transient signals in noise is a persistent challenge in sensing, communication, and electrophysiology. Here, we demonstrate a physical weak-signal detector based on a semiconductor negative differential resistance (NDR) device operated near a Hopf bifurcation. A coherent input that persists over the response time of the dynamical system can drive a transition between quiescent and oscillatory states, whereas faster stochastic fluctuations are largely suppressed. This nonlinear transformation converts a weak analog threshold crossing into all-or-none voltage spikes and therefore provides asynchronous signal detection without a reference clock. Using a modulated photovoltaic signal, we detect a weak frequency component of 100 Hz as a demonstration, at an input signal-to-noise amplitude ratio as low as 1/500, and reliably recover it in the output spectrum. We then apply the same principle to neuronal multisite extracellular recordings. After standard band-pass filtering, the raw microelectrode signal is transformed by the NDR dynamics, enhancing the distinction between neuronal spikes and background fluctuations. The resulting detected spike times agree closely with those obtained using a traditional spike-detection pipeline. These results establish bifurcation-engineered NDR dynamics as a compact hardware approach to noise-resilient signal discrimination and event-based analog-to-digital conversion that will be useful for neuroprosthetic devices.

physics.app-ph

Organic Electrochemical Neurons: Nonlinear Tools for Complex Dynamics

Hybrid oscillator architectures that combine feedback oscillators with self-sustained negative resistance oscillators have emerged as a promising platform for artificial neuron design. In this work, we introduce a modeling and analysis framework for amplifier-assisted organic electrochemical neurons, leveraging nonlinear dynamical systems theory. By formulating the system as coupled differential equations describing membrane voltage and internal state variables, we identify the conditions for self-sustained oscillations and characterize the resulting dynamics through nullclines, phase-space analysis, and bifurcation behavior, providing complementary insight to standard circuit-theoretic arguments of the operation of oscillators. Our simplified yet rigorous model enables tractable analysis of circuits integrating classical feedback components (e.g., operational amplifiers) with novel devices exhibiting negative differential resistance, such as organic electrochemical transistors (OECT). This approach reveals the core mechanisms behind oscillation generation, demonstrating the utility of dynamic systems theory in understanding and designing complex hybrid circuits. Beyond neuromorphic and bioelectronic applications, the proposed framework offers a generalizable foundation for developing tunable, biologically inspired oscillatory systems in sensing, signal processing, and adaptive control.

physics.chem-ph

Biorealistic Response in Optoelectrically-Driven Flexible Halide-Perovskite Single-Crystal Memristors

The transition to smart wearable and flexible optoelectronic devices communicating with each other and performing neuromorphic computing at the edge is a big goal in next-generation optoelectronics. These devices should perform their regular tasks supported by energy-efficient in-memory calculations. Here, we study the response of the CsPbBr$_3$ halide-perovskite single crystal fabricated on the flexible polymer substrate and integrated with the single-walled carbon nanotube thin film electrodes in a lateral geometry. We show both photodetection functions combined with the synaptic functionality in our device under the application of hybrid optoelectrical stimuli. Furthermore, we demonstrate that our device exhibits frequency-dependent bidirectional modification of synaptic weight with a sliding threshold similar to biologically plausible Bienenstock-Cooper-Munro learning. The demonstrated optoelectronic synaptic behavior in halide-perovskite single-crystals opens the opportunity for the development of hybrid organic-inorganic artificial visual systems.

cond-mat.mtrl-sci

Transient current responses of organic electrochemical transistors: Evaluating ion diffusion, chemical capacitance, and series elements

For the successful implementation of organic electrochemical transistors in neuromorphic computing, bioelectronics, and real-time sensing applications it is essential to understand the factors that influence device switching times. Here we describe a physical-electrochemical model of the transient response to a step of the gate voltage. The model incorporates (1) ion diffusion inside the channel that governs the electronic conductivity, (2) horizontal electron transport, and (3) the external elements (capacitance, ionic resistance) of the ion dynamics in the electrolyte. We find a general expression of two different time constants that determine the vertical insertion process in terms of the kinetic parameters, in addition to the electronic transit time. We highlight the central role of the chemical capacitance in determining the modulation of the lateral conductivity. The different types of response of the drain current are classified, and we discuss the significance for synaptic operation in neuromorphic circuits. The model is confirmed by detailed simulations that enable to visualize the different ions distributions and dynamics.

physics.app-ph

A biology-inspired model for the electrical response of solid state memristors

Memristors stand out as promising components in the landscape of memory and computing. Memristors are generally defined by a conductance equation containing a state variable that imparts a memory effect. The current-voltage cycling causes transitions of the conductance, determined by different physical mechanisms such as the formation of conducting filaments in an insulating surrounding. Here we provide a unified description of the set and reset processes, by means of a single voltage activated relaxation time of the memory variable. This approach is based on the Hodgkin-Huxley model that is widely used to describe action potentials dynamics in neurons. We focus on halide perovskite memristors and their intersection with neuroscience-inspired computing. We show that the modelling approach adeptly replicates the experimental traits of both volatile and nonvolatile memristors. Its versatility extends across various device materials and configurations, capturing nuanced behaviors such as scan rate- and upper vertex-dependence. The model also describes well the response to sequences of voltage pulses that cause synaptic potentiation effects. This model serves as a potent tool for comprehending and probing the underlying mechanisms of memristors, by indicating the relaxation properties that control observable response, which opens the way for a detailed physical interpretation.

physics.app-ph

Relaxation Time of Multipore Nanofluidic Memristors for Neuromorphic Applications

Memristors have been positioned at the forefront of the purposes for carrying out neuromorphic computation. Their tuneable conductivity properties enable the imitation of synaptic behaviour. Multipore nanofluidic memristors have shown their memristic properties and are candidate devices for liquid neuromorphic systems. Such properties are visible through an inductive hysteresis in the current-voltage sweeps, which is then confirmed by the inductive characteristics in impedance spectroscopy measurements. The dynamic behaviour of memristors is largely determined by a voltage-dependent relaxation time. Here, we obtain the kinetic relaxation time of a multipore nanofluidic memristor via its impedance spectra. We show that the behaviour of this characteristic of memristors is comparable to that of natural neural systems. Hence, we open a way to study the mimic of neuron characteristics by searching for memristors with the same kinetic times.

physics.app-ph

Ionic-electronic transistors small signal AC admittance: Theory and experiment

The transient behaviour of organic electrochemical transistors (OECT) is complex due to mixed ionic-electronic properties that play a central role in bioelectronics, sensing and neuromorphic applications. We investigate the impedance response of ion-controlled transistors using a model that combines electronic motion along the channel and vertical ion diffusion by insertion from the electrolyte, depending on the chemical capacitance, the diffusion coefficient of ions, the electronic transit time, and the series impedance components due to the electrolyte and its interfaces. Based on transport and charge conservation equations, we show that the vertical impedance produces a standard result of diffusion in intercalation systems, while the transversal impedance (drain current vs gate voltage) contains the electronic parameters of hole accumulation and transport along the channel. We establish the spectral shapes of drain and gate currents and the complex admittance spectra by reference to equivalent circuit models for the vertical and transversal impedances, that describe well the measurements of a PEDOT:PSS OECT. We obtain new insights to the determination of mobility by the relationship between drain and gate currents.

cond-mat.mtrl-sci

Evolution of performance parameters of perovskite solar cells with current-voltage scan frequency

Current-voltage measurements are a standard testing protocol to determine the efficiency of any solar cell. However, perovskite solar cells display significant kinetic phenomena that modify the performance at several time scales, due to hysteresis, internal capacitances, and related mechanisms. Here, we develop a method to analyze the current-voltage curves by using large amplitude sinusoids as the excitation waveforms, specifically addressed to determine the influence of cycling frequency on the performance parameters. We solve a system of equations representative of charge collection and recombination, that provide the frequency-dependent dynamical behavior of the internal ion-controlled surface recombination processes that cause open-circuit voltage variations often observed in high performance devices. We analyze several reported experimental data, and we feature the key parameters governing the evolution of hysteresis phenomena as the scan speed is increased in relation to Impedance Spectroscopy.

physics.app-ph

Switching response and ionic hysteresis in organic electrochemical transistors

Hysteresis in organic electrochemical transistors (OECT) is a basic effect in which the measured current depends on the voltage sweep direction and velocity. This phenomenon has an important impact on different aspects of the application of OECT, such as the switching time and the synaptic properties for neuromorphic applications. Here we address the combined ionic and electronic kinetic effects that cause the dominant hysteresis effects. We use a combination of tools consisting on basic analytical models, advanced 2D drift-diffusion simulation, and the experimental measurement of a Poly(3-hexylthiophene) (P3HT) OECT, working in an accumulation mode. We develop a general transmission line model considering drift electronic transport and ionic injection and diffusion from the electrolyte. We provide a basic classification of the transient response to a voltage pulse, according to the dominant ionic or electronic relaxation time, and the correspondent hysteresis effects of the transfer curves according to the general categories of inductive and capacitive hysteresis. These are basically related to the main control phenomenon, either the vertical diffusion of ions during doping and dedoping, or the equilibration of electronic current along the channel length.

physics.app-ph

Interpretation of Mott-Schottky Plots of Photoanodes for Water Splitting

A large body of literature reports that both bismuth vanadate and haematite photoanodes are semiconductors with an extremely high doping density between 10^18-10^21 cm^-3. Such values are obtained from Mott-Schottky plots by assuming that the measured capacitance is dominated by the capacitance of the depletion layer formed by the doping density within the photoanode. In this work, we show that such an assumption is erroneous in many cases because the injection of electrons from the collecting contact creates a ubiquitous capacitance step that is very difficult to distinguish from that of the depletion layer. Based on this reasoning, we derive an analytical resolution limit that is independent of the assumed active area and surface roughness of the photoanode, below which doping densities cannot be measured in a capacitance measurement. We find that the reported doping densities in literature lie very close to this value and therefore conclude that there is no credible evidence from capacitance measurements that confirms that bismuth vanadate and haematite photoanodes contain high doping densities.

cond-mat.mtrl-sci

Unravelling the role of vacancies in lead halide perovskite through electrical switching of photoluminescence

Methylammonium lead triiodide perovskite (MAPbI3) semiconductor displays outstanding photovoltaic and light emitting properties. We address the unique behavior in which a bias voltage can be used to switch on and off the luminescence of a planar film with lateral symmetric electrodes. Instead of a homogeneous suppression of emission, as in other organic semiconductor films, in MAPbI3 films a dark region advances from the positive electrode at a slow velocity of order of 1 um s-1. Here we explain the existence of the sharp front in terms of the drift of ionic vacancies that drastically reduce the radiative recombination rate in the film. Based on a dynamic transport model we show that the square reciprocal of the electrical current is linear with time in agreement with the experimental observations. This insight leads to a direct determination of the diffusion coefficient of iodine vacancies D = 6 10-9 cm2 s-1 and provides detailed information and control on the effect of ionic conduction over the electrooptical properties of hybrid perovskite materials.

cond-mat.mtrl-sci

Charge separation in organic photovoltaic cells

We consider a simple model for the geminate electron-hole separation process in organic photovoltaic cells, in order to illustrate the influence of dimensionality of conducting channels on the efficiency of the process. The Miller-Abrahams expression for the transition rates between nearest neighbor sites was used for simulating random walks of the electron in the Coulomb field of the hole. The non-equilibrium kinetic Monte Carlo simulation results qualitatively confirm the equilibrium estimations, although quantitatively the efficiency of the higher dimensional systems is less pronounced. The lifetime of the electron prior to recombination is approximately equal to the lifetime prior to dissociation. Their values indicate that electrons perform long stochastic walks before they are captured by the collector or recombined. The non-equilibrium free energy considerably differs from the equilibrium one. The efficiency of the separation process decreases with increasing the distance to the collector, and this decrease is considerably less pronounced for the three dimensional system. The simulation results are in good agreement with the extension of the continuum Onsager theory that accounts for the finite recombination rate at nonzero reaction radius and non-exponential kinetics of the charge separation process.

physics.comp-ph