arXiv subjects

Junhao Lin

Publications and source records attributed to Junhao Lin.

At least 37 records · Page 2Linked to original sources

arXiv2022

A New Dataset and A Baseline Model for Breast Lesion Detection in Ultrasound Videos

Breast lesion detection in ultrasound is critical for breast cancer diagnosis. Existing methods mainly rely on individual 2D ultrasound images or combine unlabeled video and labeled 2D images to train models for breast lesion detection. In this paper, we first collect and annotate an ultrasound video dataset (188 videos) for breast lesion detection. Moreover, we propose a clip-level and video-level feature aggregated network (CVA-Net) for addressing breast lesion detection in ultrasound videos by aggregating video-level lesion classification features and clip-level temporal features. The clip-level temporal features encode local temporal information of ordered video frames and global temporal information of shuffled video frames. In our CVA-Net, an inter-video fusion module is devised to fuse local features from original video frames and global features from shuffled video frames, and an intra-video fusion module is devised to learn the temporal information among adjacent video frames. Moreover, we learn video-level features to classify the breast lesions of the original video as benign or malignant lesions to further enhance the final breast lesion detection performance in ultrasound videos. Experimental results on our annotated dataset demonstrate that our CVA-Net clearly outperforms state-of-the-art methods. The corresponding code and dataset are publicly available at \url{https://github.com/jhl-Det/CVA-Net}.

eess.IV↗

arXiv2022

Dative epitaxy of commensurate monocrystalline covalent-van der Waals moiré supercrystal

Realizing van der Waals (vdW) epitaxy in the 80s represents a breakthrough that circumvents the stringent lattice matching and processing compatibility requirements in conventional covalent heteroepitaxy. However, due to the weak vdW interactions, there is little control over film qualities by the substrate. Typically, discrete domains with a spread of misorientation angles are formed, limiting the applicability of vdW epitaxy. Here we report the epitaxial growth of monocrystalline, covalent Cr5Te8 2D crystals on monolayer vdW WSe2 by chemical vapor deposition, driven by interfacial dative bond formation. The lattice of Cr5Te8, with a lateral dimension of a few ten microns, is fully commensurate with that of WSe2 via 3 x 3 (Cr5Te8)-7 x 7 (WSe2) supercell matching, forming a single crystalline moire superlattice. Our work has established a conceptually distinct paradigm of thin film epitaxy termed dative epitaxy, which takes full advantage of covalent epitaxy with chemical bonding for fixing the atomic registry and crystal orientation, while circumventing its stringent lattice matching and processing compatibility requirements; conversely, it ensures the full flexibility of vdW epitaxy, while avoiding its poor orientation control. Cr5Te8 2D crystals grown by dative epitaxy exhibit square magnetic hysteresis, suggesting minimized interfacial defects that can serve as pinning sites.

cond-mat.mtrl-sci↗

arXiv2022

Type-II Dirac Nodal Lines in double-kagome-layered CsV$_8$Sb$_{12}$

Lorentz-violating type-II Dirac nodal line semimetals (DNLSs), hosting curves of band degeneracy formed by two dispersion branches with the same sign of slope, represent a novel states of matter. While being studied extensively in theory, convincing experimental evidences of type-II DNLSs remain elusive. Recently, Vanadium-based kagome materials have emerged as a fertile ground to study the interplay between lattice symmetry and band topology. In this work, we study the low-energy band structure of double-kagome-layered CsV$_8$Sb$_{12}$ and identify it as a scarce type-II DNLS protected by mirror symmetry. We have observed multiple DNLs consisting of type-II Dirac cones close to or almost at the Fermi level via angle-resolved photoemission spectroscopy (ARPES). First-principle analyses show that spin-orbit coupling only opens a small gap, resulting effectively gapless ARPES spectra, yet generating large spin Berry curvature. These type-II DNLs, together with the interaction between a low-energy van Hove singularity and quasi-1D band as we observed in the same material, suggest CsV$_8$Sb$_{12}$ as an ideal platform for exploring novel transport properties such as chiral anomaly, the Klein tunneling and fractional quantum Hall effect.

cond-mat.str-el↗

arXiv2021

Spin mapping of intralayer antiferromagnetism and spin-flop transition in monolayer CrTe$_2$

Intrinsic antiferromagnetism in van der Waals (vdW) monolayer (ML) crystals enriches the understanding regarding two-dimensional (2D) magnetic orders and holds special virtues over ferromagnetism in spintronic applications. However, the studies on intrinsic antiferromagnetism are sparse, owing to the lack of net magnetisation. In this study, by combining spin-polarised scanning tunnelling microscopy and first-principles calculations, we investigate the magnetism of vdW ML CrTe2, which has been successfully grown through molecular beam epitaxy. Surprisingly, we observe a stable antiferromagnetic (AFM) order at the atomic scale in the ML crystal, whose bulk is a strong ferromagnet, and correlate its imaged zigzag spin texture with the atomic lattice structure. The AFM order exhibits an intriguing noncollinear spin-flop transition under magnetic fields, consistent with its calculated moderate magnetic anisotropy. The findings of this study demonstrate the intricacy of 2D vdW magnetic materials and pave the way for their in-depth studies.

cond-mat.mtrl-sci↗

arXiv2021

Layer-controlled Ferromagnetism in Atomically Thin CrSiTe$_3$ Flakes

The research on two-dimensional (2D) van der Waals (vdW) ferromagnets has promoted the development of ultrahigh-density and nanoscale data storage. However, intrinsic ferromagnetism in layered magnets is always subject to many factors, such as stacking orders, interlayer couplings, and the number of layers. Here, we report a magnetic transition from soft to hard ferromagnetic behaviors as the thickness of CrSiTe$_3$ flakes decreases down to several nanometers. Phenomenally, in contrast to the negligible hysteresis loop in the bulk counterparts, atomically thin CrSiTe$_3$ shows a rectangular loop with finite magnetization and coercivity as thickness decreases down to ~8 nm, indicative of a single-domain and out-of-plane ferromagnetic order. We find that the stray field is weakened with decreasing thickness, which suppresses the formation of the domain wall. In addition, thickness-dependent ferromagnetic properties also reveal a crossover from 3 dimensional to 2 dimensional Ising ferromagnets at a ~7 nm thickness of CrSiTe$_3$, accompanied by a drop of the Curie temperature from 33 K for bulk to ~17 K for 4 nm sample.

cond-mat.mtrl-sci↗

arXiv2021

Dirac Nodal Lines and Nodal Loops in a Topological Kagome Superconductor CsV$_3$Sb$_5$

The intertwining of charge order, superconductivity and band topology has promoted the AV$_3$Sb$_5$ (A=K, Rb, Cs) family of materials to the center of attention in condensed matter physics. Underlying those mysterious macroscopic properties such as giant anomalous Hall conductivity (AHC) and chiral charge density wave is their nontrivial band topology. While there have been numerous experimental and theoretical works investigating the nontrivial band structure and especially the van Hove singularities, the exact topological phase of this family remains to be clarified. In this work, we identify CsV$_3$Sb$_5$ as a Dirac nodal line semimetal based on the observation of multiple Dirac nodal lines and loops close to the Fermi level. Combining photoemission spectroscopy and density functional theory, we identify two groups of Dirac nodal lines along $k_z$ direction and one group of Dirac nodal loops in the A-H-L plane. These nodal loops are located at the Fermi level within the instrumental resolution limit. Importantly, our first-principle analyses indicate that these nodal loops may be a crucial source of the mysterious giant AHC observed. Our results not only provide a clear picture to categorize the band structure topology of this family of materials, but also suggest the dominant role of topological nodal loops in shaping their transport behavior.

cond-mat.str-el↗

arXiv2021

Emergence of Quantum Confinement in Topological Kagome Superconductor CsV$_3$Sb$_5$ family

Quantum confinement is a restriction on the motion of electrons in a material to specific region, resulting in discrete energy levels rather than continuous energy bands. In certain materials quantum confinement could dramatically reshape the electronic structure and properties of the surface with respect to the bulk. Here, in the recently discovered kagome superconductor CsV$_3$Sb$_5$ (A=K, Rb, Cs) family of materials, we unveil the dominant role of quantum confinement in determining their surface electronic structure. Combining angle-resolved photoemission spectroscopy (ARPES) measurement and density-functional theory simulation, we report the observations of two-dimensional quantum well states due to the confinement of bulk electron pocket and Dirac cone to the nearly isolated surface layer. The theoretical calculations on the slab model also suggest that the ARPES observed spectra are almost entirely contributed by the top two layers. Our results not only explain the disagreement of band structures between the recent experiments and calculations, but also suggest an equally important role played by quantum confinement, together with strong correlation and band topology, in shaping the electronic properties of this family of materials.

cond-mat.str-el↗

arXiv2021

Glue-Assisted Grinding Exfoliation of Large-Size 2D Materials for Insulating Thermal Conduction and Large-Current-Density Hydrogen Evolution

Two-dimensional (2D) materials have many promising applications, but their scalable production remains challenging. Herein, we develop a glue-assisted grinding exfoliation (GAGE) method in which the adhesive polymer acts as a glue to massively produce 2D materials with large lateral sizes, high quality, and high yield. Density functional theory simulation shows that the exfoliation mechanism involves the competition between the binding energy of selected polymers and the 2D materials which is larger than the exfoliation energy of the layered materials. Taking h-BN as an example, the GAGE produces 2D h-BN with an average lateral size of 2.18 μm and thickness of 3.91 nm. The method is also extended to produce various other 2D materials, including graphene, MoS2, Bi2O2Se, vermiculite, and montmorillonite. Two representative applications of thus-produced 2D materials have been demonstrated, including h-BN/polymer composites for insulating thermal conduction and MoS2 electrocatalysts for large-current-density hydrogen evolution, indicating the great potential of massively produced 2D materials.

physics.app-ph↗

arXiv2021

Synthesis and properties of free-standing monolayer amorphous carbon

Bulk amorphous materials have been studied extensively and are widely used, yet their atomic arrangement remains an open issue. Although they are generally believed to be Zachariasen continuous random networks, recent experimental evidence favours the competing crystallite model in the case of amorphous silicon. In two-dimensional materials, however, the corresponding questions remain unanswered. Here we report the synthesis, by laser-assisted chemical vapour deposition, of centimetre-scale, free-standing, continuous and stable monolayer amorphous carbon, topologically distinct from disordered graphene. Unlike in bulk materials, the structure of monolayer amorphous carbon can be determined by atomic-resolution imaging. Extensive characterization by Raman and X-ray spectroscopy and transmission electron microscopy reveals the complete absence of long-range periodicity and a threefold-coordinated structure with a wide distribution of bond lengths, bond angles, and five-, six-, seven- and eight-member rings. The ring distribution is not a Zachariasen continuous random network, but resembles the competing (nano)crystallite model. We construct a corresponding model that enables density-functional-theory calculations of the properties of monolayer amorphous carbon, in accordance with observations. Direct measurements confirm that it is insulating, with resistivity values similar to those of boron nitride grown by chemical vapour deposition. Free-standing monolayer amorphous carbon is surprisingly stable and deforms to a high breaking strength, without crack propagation from the point of fracture. The excellent physical properties of this stable, free-standing monolayer amorphous carbon could prove useful for permeation and diffusion barriers in applications such as magnetic recording devices and flexible electronics.

cond-mat.mtrl-sci↗

arXiv2021

Doping Concentration Modulation in Vanadium Doped Monolayer Molybdenum Disulfide for Synaptic Transistors

Doping is an effective way to modify the electronic property of two-dimensional (2D) materials and endow them with new functionalities. However, wide-range control of the substitutional doping concentration with large scale uniformity remains challenging in 2D materials. Here we report in-situ chemical vapor deposition growth of vanadium (V) doped monolayer molybdenum disulfide (MoS2) with widely tunable doping concentrations ranging from 0.3 to 13.1 at%. The key to regulate the doping concentration lies in the use of appropriate V precursors with different doping abilities, which also generate a large-scale uniform doping effect. Artificial synaptic transistors were fabricated by using the heavily doped MoS2 as the channel material for the first time. Synaptic potentiation, depression and repetitive learning processes are mimicked by the gate-tunable channel conductance change in such transistors with abundant V atoms to trap/detrap electrons. This work shows a feasible method to dope monolayer 2D semiconductors and demonstrates their use in artificial synaptic transistors.

cond-mat.mtrl-sci↗

arXiv2021

Covalent 2D Cr$_2$Te$_3$ ferromagnet

To broaden the scope of van der Waals 2D magnets, we report the synthesis and magnetism of covalent 2D magnetic Cr$_2$Te$_3$ with a thickness down to one-unit-cell. The 2D Cr$_2$Te$_3$ crystals exhibit robust ferromagnetism with a Curie temperature of 180 K, a large perpendicular anisotropy of 7*105 J m-3, and a high coercivity of ~ 4.6 kG at 20 K. First-principles calculations further show a transition from canted to collinear ferromagnetism, a transition from perpendicular to in-plane anisotropy, and emergent half-metallic behavior in atomically-thin Cr$_2$Te$_3$, suggesting its potential application for injecting carriers with high spin polarization into spintronic devices.

cond-mat.mes-hall↗

arXiv2021

Probing quasi-long-range ordering by magnetostriction in monolayer CoPS3

Mermin-Wagner-Coleman theorem predicts no long-range magnetic order at finite temperature in the two-dimensional (2D) isotropic systems, but a quasi-long-range order with a divergent correlation length at the Kosterlitz-Thouless (KT) transition for planar magnets. As a representative of two-dimensional planar antiferromagnets, single-layer CoPS3 carries the promise of monolayer antiferromagnetic platforms for the ultimately thin spintronics. Here, with the aid of magnetostriction which is sensitive to the local magnetic order, we observe the signatured phonon mode splitting of below TKT in monolayer CoPS3, revealing the presence of quasi-long-range ordering in XY-type antiferromagnet. Moreover, the ratio (J'/J) between the interlayer and intralayer interactions, which characterizes the 2D behaviors, is evaluated to be around 0.03 for the first time. Our results provide an efficient method to detect the quasi-long-range antiferromagnetic ordering in the two-dimensional magnets down to monolayer limit.

cond-mat.mes-hall↗

arXiv2020

Modulating Electronic Structure of Monolayer Transition Metal Dichalcogenides by Substitutional Nb-Doping

Modulating electronic structure of monolayer transition metal dichalcogenides (TMDCs) is important for many applications and doping is an effective way towards this goal, yet is challenging to control. Here we report the in-situ substitutional doping of niobium (Nb) into TMDCs with tunable concentrations during chemical vapour deposition. Taking monolayer WS2 as an example, doping Nb into its lattice leads to bandgap changes in the range 1.98 eV to 1.65 eV. Noteworthy, electrical transport measurements and density functional theory calculations show that the 4d electron orbitals of the Nb dopants contribute to the density of states of Nb-doped WS2 around the Fermi level, resulting in an n to p-type conversion. Nb-doping also reduces the energy barrier of hydrogen absorption in WS2, leading to an improved electrocatalytic hydrogen evolution performance. These results highlight the effectiveness of controlled doping in modulating the electronic structure of TMDCs and their use in electronic related applications.

cond-mat.mtrl-sci↗

arXiv2020

Synthesis of ultrahigh-quality monolayer molybdenum disulfide through in-situ defect healing with thiol molecules

Monolayer transition metal dichalcogenides (TMDCs) are two-dimensional (2D) materials with many potential applications. Chemical vapour deposition (CVD) is a promising method to synthesize these materials. However, CVD-grown materials generally have poorer quality than mechanically exfoliated ones and contain more defects due to the difficulties in controlling precursors' distribution and concentration during growth where solid precursors are used. Here, we propose to use thiol as a liquid precursor for CVD growth of high quality and uniform 2D MoS2. Atomic-resolved structure characterizations indicate that the concentration of sulfur vacancies in the MoS2 grown from thiol is the lowest among all reported CVD samples. Low temperature spectroscopic characterization further reveals the ultrahigh optical quality of the grown MoS2. Density functional theory simulations indicate that thiol molecules could interact with sulfur vacancies in MoS2 and repair these defects during the growth of MoS2, resulting in high quality MoS2. This work provides a facile and controllable method for the growth of high-quality 2D materials with ultralow sulfur vacancies and high optical quality, which will benefit their optoelectronic applications.

cond-mat.mtrl-sci↗

arXiv2020

Unsaturated Single Atoms on Monolayer Transition Metal Dichalcogenides for Ultrafast Hydrogen Evolution

Large scale implementation of electrochemical water splitting for hydrogen evolution requires cheap and efficient catalysts to replace expensive platinum. Molybdenum disulfide is one of the most promising alternative catalysts but its intrinsic activity is still inferior to platinum. There is therefore a need to explore new active site origins in molybdenum disulfide with ultrafast reaction kinetics and to understand their mechanisms. Here, we report a universal cold hydrogen plasma reduction method for synthesizing different single atoms sitting on two-dimensional monolayers. In case of molybdenum disulfide, we design and identify a new type of active site, i.e., unsaturated Mo single atoms on cogenetic monolayer molybdenum disulfide. The catalyst shows exceptional intrinsic activity with a Tafel slope of 35.1 mV dec-1 and a turnover frequency of ~10^3 s-1 at 100 mV, based on single flake microcell measurements. Theoretical studies indicate that coordinately unsaturated Mo single atoms sitting on molybdenum disulfide increase the bond strength between adsorbed hydrogen atoms and the substrates through hybridization, leading to fast hydrogen adsorption/desorption kinetics and superior hydrogen evolution activity. This work shines fresh light on preparing highly-efficient electrocatalysts for water splitting and other electrochemical processes, as well as provides a general method to synthesize single atoms on two-dimensional monolayers.

cond-mat.mtrl-sci↗

arXiv2020

Dissolution-Precipitation Growth of Uniform and Clean Two Dimensional Transition Metal Dichalcogenides

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted much interest and shown promise in many applications. However, it is challenging to obtain uniform TMDCs with clean surfaces, because of the difficulties in controlling the way the reactants are supplied to the reaction in the current chemical vapor deposition (CVD) growth process. Here, we report a new growth approach called dissolution-precipitation (DP) growth, where the metal sources are sealed inside glass substrates to control their feeding to the reaction. Noteworthy, the diffusion of metal source inside glass to its surface provides a uniform metal source on the glass surface, and restricts the TMDC growth to only a surface reaction while eliminates unwanted gas-phase reaction. This feature gives rise to highly-uniform monolayer TMDCs with a clean surface on centimeter-scale substrates. The DP growth works well for a large variety of TMDCs and their alloys, providing a solid foundation for the controlled growth of clean TMDCs by the fine control of the metal source.

cond-mat.mtrl-sci↗

arXiv2020

Proton and Li-Ion Permeation through Graphene with Eight-Atom-Ring Defects

Defect-free graphene is impermeable to gases and liquids but highly permeable to thermal protons. Atomic-scale defects such as vacancies, grain boundaries and Stone-Wales defects are predicted to enhance graphene's proton permeability and may even allow small ions through, whereas larger species such as gas molecules should remain blocked. These expectations have so far remained untested in experiment. Here we show that atomically thin carbon films with a high density of atomic-scale defects continue blocking all molecular transport, but their proton permeability becomes ~1,000 times higher than that of defect-free graphene. Lithium ions can also permeate through such disordered graphene. The enhanced proton and ion permeability is attributed to a high density of 8-carbon-atom rings. The latter pose approximately twice lower energy barriers for incoming protons compared to the 6-atom rings of graphene and a relatively low barrier of ~0.6 eV for Li ions. Our findings suggest that disordered graphene could be of interest as membranes and protective barriers in various Li-ion and hydrogen technologies.

cond-mat.mtrl-sci↗

arXiv2020

Spontaneous Surface Collapse and Reconstruction in Antiferromagnetic Topological Insulator MnBi$_2$Te$_4$

MnBi$_2$Te$_4$ is an antiferromagnetic topological insulator which stimulates intense interests due to the exotic quantum phenomena and promising device applications. Surface structure is a determinant factor to understand the novel magnetic and topological behavior of MnBi2Te4, yet its precise atomic structure remains elusive. Here, we discovered a spontaneous surface collapse and reconstruction in few-layer MnBi2Te4 exfoliated under delicate protection. Instead of the ideal septuple-layer structure in the bulk, the collapsed surface is shown to reconstruct as Mn-doped Bi$_2$Te$_3$ quintuple-layer and Mn$_x$Bi$_y$Te double-layer with a clear van der Waals gap in between. Combining with first-principles calculations, such spontaneous surface collapse is attributed to the abundant intrinsic Mn-Bi antisite defects and tellurium vacancy in the exfoliated surface, which is further supported by in-situ annealing and electron irradiation experiments. Our results shed light on the understanding of the intricate surface-bulk correspondence of MnBi$_2$Te$_4$, and provide insightful perspective of the surface-related quantum measurements in MnBi$_2$Te$_4$ few-layer devices.

cond-mat.mtrl-sci↗