arXiv subjects

Junying Shen

Publications and source records attributed to Junying Shen.

21 records · Page 2Linked to original sources

arXiv2016

Quantum Hall Effect in Ultrahigh Mobility Two-dimensional Hole Gas of Black Phosphorus

We demonstrate that a field effect transistor (FET) made of few layer black phosphorus (BP) encapsulated in hexagonal boron nitride (h-BN) in vacuum, exhibts the room temperature hole mobility of 5200 $cm^2/Vs$ being limited just by the phonon scattering. At cryogenic tempeature the FET mobility increases up to 45,000 $cm^2/Vs$, which is eight times higher compared with the mobility obtained in earlier reports. The unprecedentedly clean h-BN/BP/h-BN heterostructure exhibits Shubnikov-de Haas oscillations and quantum Hall effect with Landau level (LL) filling factors down to v=2 in conventional laboratory magnetic fields. Moreover, carrier density independent effective mass m=0.26 m_0 is measured, and Lande g-factor g=2.47 is reported. Furthermore, an indication for a distinct hole transport behavior with up and down spin orientation is found.

cond-mat.mes-hall↗

arXiv2016

Universal low-temperature Ohmic contacts for quantum transport in transition metal dichalcogenides

Low carrier mobility and high electrical contact resistance are two major obstacles prohibiting explorations of quantum transport in TMDCs. Here, we demonstrate an effective method to establish low-temperature Ohmic contacts in boron nitride encapsulated TMDC devices based on selective etching and conventional electron-beam evaporation of metal electrodes. This method works for most extensively studied TMDCs in recent years, including MoS2, MoSe2, WSe2, WS2, and 2H-MoTe2. Low electrical contact resistance is achieved at 2 K. All of the few-layer TMDC devices studied show excellent performance with remarkably improved field-effect mobilities ranging from 2300 cm2/V s to 16000 cm2/V s, as verified by the high carrier mobilities extracted from Hall effect measurements. Moreover, both high-mobility n-type and p-type TMDC channels can be realized by simply using appropriate contact metals. Prominent Shubnikov-de Haas oscillations have been observed and investigated in these high-quality TMDC devices.

cond-mat.mtrl-sci↗

arXiv2016

Dramatic increase of the onset critical temperature and critical field of elemental Sn in the form of thin nanowires

Sn is a well-known classical superconductor on the border between type I and type II with critical temperature of 3.722K and critical field of 0.031T. We show by means of specific heat and electric magneto-transport data that its critical parameters can be dramatically increased if it is brought in the form of loosely bound bundles of thin nanowires. The specific heat displays a pronounced double phase transition at 3.7K and 5.5K, which we attribute to the inner 'bulk' contribution of the nanowires and to the surface contribution, respectively. The latter is visible only because of the large volume fraction of the surface layer in relation to their bulk inner volume. The upper transition coincides with the onset of the resistive transition, while zero resistance is gradually approached below the lower transition. The large coherence length of 230nm at 0K likely actuates a Josephson coupling between adjacent neighboring nanowires and thus suppresses the effect of 1D phase fluctuations along the nanowires, and stabilizes 3D phase coherence throughout the entire network with zero resistance. A magnetic field of more than 3T is required to restore the normal state, which means that the critical field is enhanced by about two orders of magnitude with respect to Sn in its bulk form.

cond-mat.supr-con↗