arXiv subjects

Junying Shen

Publications and source records attributed to Junying Shen.

At least 19 recordsLinked to original sources

arXiv2025

Enhanced anomalous Hall effect in the topological Kagome metal Cs(V$_{1-x}$Mn$_x$)$_3$Sb$_5$

As a fundamental physical phenomenon, achieving and controlling a large anomalous Hall effect (AHE) is crucial for advancing the understanding of topological physics and for developing applied technologies in spintronics. The recently discovered topological Kagome metal $A$V$_3$Sb$_5$ ($A =$ K, Rb, Cs)exhibits a significant AHE along with charge density wave (CDW) and superconductivity, providing an ideal platform to study the interactions between nontrivial band topology, CDW, and superconductivity. In this study, we systematically investigated the evolution of CDW, superconductivity, and AHE in electron (Mn)-doped Cs(V$_{1-x}$Mn$_x$)$_3$Sb$_5$ single crystals. The experimental results show that electron doping rapidly suppresses superconductivity, while the CDW order remains relatively robust. Meanwhile, a significantly enhanced AHE, with a maximum anomalous Hall conductivity (AHC) of ~25331 \Ohm ^{-1}\cm^{-1} and an anomalous Hall angle of 6.66% occurs at a relatively low doping level of $x = 0.03$. Based on the Tian-Ye-Jin (TYJ) scaling model, such a significant enhancement AHC is mainly dominated by the skew scattering. We speculated enhanced skew scattering between electrons and Mn originating from the strengthened spin-orbital coupling. Our finding provides important guidance for the design and development of transverse transport properties in topological Kagome materials.

cond-mat.str-el↗

arXiv2024

Pressure tunable magnetic skyrmion phase in Co8Zn8Mn4 single crystals

In a magnetic skyrmion phase, magnetic moments form vortex-like topological textures which are of both fundamental and industrial interests. In $β$-Mn-type Co-Zn-Mn alloys, chrial magnetic skyrmions emerge above room temperature, providing a unique system for studying the skrymion physics and exploring spintronics applications. However, the magnetic skyrmion phase is typically confined in a narrow and limited temperature ($T$) and magnetic field ($H$) range. Here, we demonstrate that hydrostatic pressure can expand the skyrmion phase in the $T-H$ phase diagram of single-crystalline Co$_8$Zn$_8$Mn$_4$. At ambient pressure, signatures of skyrmions are seen within $T\sim302-308$ K and $H\sim50-100$ Oe. Applying a moderate pressure of 6 kbar extends this range to $T\sim300-310$ K and $H\sim50-150$ Oe. However, further escalation of pressure to 10 kbar results in a slight contraction of the skyrmion phase. These findings underscore the sensitivity of the skyrmion phase in Co$_8$Zn$_8$Mn$_4$ to external pressures, and hint at the potential of strain engineering, particularly in $β$-Mn-type Co-Zn-Mn thin films, as a promising avenue to customize the skyrmion phase.

cond-mat.mtrl-sci↗

arXiv2023

Electrical and thermal transport properties of kagome metals $A$Ti$_3$Bi$_5$ ($A$ = Rb, Cs)

We report electrical and thermal transport properties of single crystalline kagome metals $A$Ti$_3$Bi$_5$ ($A$ = Rb, Cs). Different from the structural similar kagome superconductors $A$V$_3$Sb$_5$, no charge density wave instabilities are found in $A$Ti$_3$Bi$_5$. At low temperatures below 5 K, signatures of superconductivity appear in $A$Ti$_3$Bi$_5$ as seen in magnetization measurements. However, bulk superconductivity is not evidenced by specific heat results. Similar to $A$V$_3$Sb$_5$, $A$Ti$_3$Bi$_5$ show nonlinear magnetic field dependence of the Hall effect below about 70 K, pointing to a multiband nature. Unlike $A$V$_3$Sb$_5$ in which phonons and electron-phonon coupling play important roles in thermal transport, the thermal conductivity in $A$Ti$_3$Bi$_5$ is dominated by electronic contributions. Moreover, our calculated electronic structure suggests that van Hove singularities are sitting well above the Fermi energy. Compared with $A$V$_3$Sb$_5$, the absence of charge orders in $A$Ti$_3$Bi$_5$ is closely associated with minor contributions from electron-phonon coupling and/or van Hove singularities.

cond-mat.supr-con↗

arXiv2023

Anomalous Nernst effect in a ferrimagnetic nodal-line semiconductor Mn$_3$Si$_2$Te$_6$

In the ferrimagnetic nodal-line semiconductor Mn$_3$Si$_2$Te$_6$, colossal magnetoresistance (CMR) arises below $T_\mathrm{c}=78$ K due to the interplay of magnetism and topological nodal-line fermiology. The Berry curvature associated with the topological nodal-line is expected to produce an anomalous Nernst effect. Here, we present sizable anomalous Nernst signal in Mn$_3$Si$_2$Te$_6$ below $T_\mathrm{c}$. In the low-magnetic-field region where CMR is most apparent, the scaling ratio between the Nernst signal and magnetization is significantly enhanced compared to that in conventional magnetic materials. The enhanced Nernst effect and CMR likely share the same mechanisms, which are closely linked to the nodal-line topology.

cond-mat.str-el↗

arXiv2022

Giant magnetic anisotropy in the atomically thin van der Waals antiferromagnet FePS3

Van der Waals (vdW) magnets are an ideal platform for tailoring two-dimensional (2D) magnetism with immense potential for spintronics applications and are intensively investigated. However, little is known about the microscopic origin of magnetic order in these antiferromagnetic systems. We used X-ray photoemission electron microscopy to address the electronic and magnetic properties of the vdW antiferromagnet FePS3 down to the monolayer. Our experiments reveal a giant out-of-plane magnetic anisotropy of 22 meV per Fe ion, accompanied by unquenched magnetic orbital moments. Moreover, our calculations suggest that the Ising magnetism in FePS3 is a visible manifestation of spin-orbit entanglement of the Fe 3d electron system.

cond-mat.mes-hall↗

arXiv2019

$Z_3$-vestigial nematic order due to superconducting fluctuations in the doped topological insulator Nb$_x$Bi$_2$Se$_3$ and Cu$_x$Bi$_2$Se$_3$

A state of matter with a multi-component order parameter can give rise to vestigial order. In the vestigial phase, the primary order is only partially melted, leaving a remaining symmetry breaking behind, an effect driven by strong classical or quantum fluctuations. Vestigial states due to primary spin and charge-density-wave order have been discussed in the context of iron-based and cuprate materials. Here we present the observation of a partially melted superconductor in which pairing fluctuations condense at a separate phase transition and form a nematic state with broken Z3, i.e. three-state Potts-model symmetry. High-resolution thermal expansion, specific heat and magnetization measurements of the doped topological insulator NbxBi2Se3 reveal that this symmetry breaking occurs at Tnem=3.8 K above Tc=3.25 K, along with an onset of superconducting fluctuations. Thus, before Cooper pairs establish long-range coherence at Tc, they fluctuate in a way that breaks the rotational invariance at Tnem and induces a distortion of the crystalline lattice. Similar results are found for CuxBi2Se3.

cond-mat.supr-con↗

arXiv2018

On the $^{12}$C/$^{13}$C carbon isotope effect in the quasi one-dimensional superconductor Sc$_3$CoC$_4$

Sc$_3$CoC$_4$ is the only superconductor in the group of the isotypic carbides Sc$_3M$C$_4$ ($M$ = Mn, Fe, Ru, Os, Co, Rh, Ir, Ni), rendering it into an ideal benchmark system to systematically study the prerequisites and mechanism of superconductivity in such quasi one-dimensional structures. To investigate the isotope effect, the substitution series Sc$_3$Co($^{12}$C$_{1-x}$$^{13}$C$_x$)$_4$ with $x$ = 0, 0.5 and 1 was synthesized by arc melting. The sample homogeneity was confirmed by powder X-ray diffraction and NMR spectroscopy. The resulting isotope coefficient based on magnetization studies on polycrystalline samples and electrical resistivity measurements on single crystals of $α$ = 0.58 lies close to the value of 0.5 predicted by BCS theory.

cond-mat.supr-con↗

arXiv2017

Nematic topological superconducting phase in Nb-doped Bi2Se3

A nematic topological superconductor has an order parameter symmetry, which spontaneously breaks the crystalline symmetry in its superconducting state. This state can be observed, for example, by thermodynamic or upper critical field experiments in which a magnetic field is rotated with respect to the crystalline axes. The corresponding physical quantity then directly reflects the symmetry of the order parameter. We present a study on the superconducting upper critical field of the Nb-doped topological insulator NbxBi2Se3 for various magnetic field orientations parallel and perpendicular to the basal plane of the Bi2Se3 layers. The data were obtained by two complementary experimental techniques, magnetoresistance and DC magnetization, on three different single crystalline samples of the same batch. Both methods and all samples show with perfect agreement that the in-plane upper critical fields clearly demonstrate a two-fold symmetry that breaks the three-fold crystal symmetry. The two-fold symmetry is also found in the absolute value of the magnetization of the initial zero-field-cooled branch of the hysteresis loop and in the value of the thermodynamic contribution above the irreversibility field, but also in the irreversible properties such as the value of the characteristic irreversibility field and in the width of the hysteresis loop. This provides strong experimental evidence that Nb-doped Bi2Se3 is a nematic topological superconductor similar to the Cu- and Sr-doped Bi2Se3.

cond-mat.supr-con↗

arXiv2017

Isolation and Characterization of Few-layer Manganese Thiophosphite

This work reports an experimental study on an antiferromagnetic honeycomb lattice of MnPS$_3$ that couples the valley degree of freedom to a macroscopic antiferromagnetic order. The crystal structure of MnPS$_3$ is identified by high resolution scanning transmission electron microscopy. Layer dependent angle resolved polarized Raman fingerprints of the MnPS$_3$ crystal are obtained and the Raman peak at 383 cm$^{-1}$ exhibits 100% polarity. Temperature dependences of anisotropic magnetic susceptibility of MnPS$_3$ crystal are measured in superconducting quantum interference device. Magnetic parameters like effective magnetic moment, and exchange interaction are extracted from the mean field approximation mode. Ambipolar electronic transport channels in MnPS$_3$ are realized by the liquid gating technique. The conducting channel of MnPS$_3$ offers a unique platform for exploring the spin/valleytronics and magnetic orders in 2D limitation.

cond-mat.mes-hall↗

arXiv2017

Thermodynamic evidence for the Fulde-Ferrell-Larkin-Ovchinnikov state in the KFe2As2 superconductor

We have investigated the magnetic phase diagram near the upper critical field of KFe2As2 by magnetic torque and specific heat experiments, using a high-resolution piezo-rotary positioner to precisely control the parallel orientation of the magnetic field with respect to the FeAs layers. We observe a clear double transition when the field is oriented strictly in-plane, and a characteristic upturn of the upper critical field line well beyond the Pauli limit at 4.7 T. This provides firm evidence that an FFLO state is realized in this iron-based KFe2As2 superconductor.

cond-mat.supr-con↗

arXiv2017

Large-area epitaxial growth of MoSe2 via an incandescent molybdenum source

We have developed an incandescent Mo source to fabricate large-area single-crystalline MoSe2 thin films. The as-grown MoSe2 thin films were characterized using transmission electron microscopy, energy dispersive X-ray spectroscopy, atomic force microscopy, Raman spectroscopy, photoluminescence, reflection high energy electron diffraction (RHEED) and angular resolved photoemission spectroscopy (ARPES). A new Raman characteristic peak at 1591 cm-1 was identified. Results from Raman spectroscopy, photoluminescence, RHEED and ARPES studies consistently reveal that large-area single crystalline mono-layer of MoSe2 could be achieved by this technique. This technique enjoys several advantages over conventional approaches and could be extended to the growth of other two-dimensional layered materials containing a low-vapor-pressure element.

cond-mat.mtrl-sci↗

arXiv2017

Reinforcement of interfacial superconductivity in a Bi2Te3/Fe1+yTe heterostructure under hydrostatic pressure

We investigate the hydrostatic pressure dependence of interfacial superconductivity occurring at the atomically sharp interface between two non-superconducting materials: the topological insulator (TI) Bi2Te3 and the parent compound Fe1+yTe of the chalcogenide iron based superconductors. Under pressure, a significant increase in the superconducting transition temperature Tc is observed. We trace the pressure dependence of a superconducting twin gap structure by Andreev reflection point contact spectroscopy (PCARS), which shows that a large superconducting gap associated with the interfacial superconductivity increases along with Tc. A second smaller gap, which is attributed to proximity-induced superconductivity in the TI layer, increases first, but then reaches a maximum and appears to be gradually suppressed at higher pressure. We interpret our data in the context of a pressure-induced doping effect of the interface, in which charge is transferred from the TI layer to the interface and the interfacial superconductivity is enhanced. This demonstrates the important role of the TI in the interfacial superconductivity mechanism.

cond-mat.supr-con↗

arXiv2017

Possible coexistence of double-Q magnetic order and chequerboard charge order in the re-entrant tetragonal phase of Ba0.76K0.24Fe2As2

We investigate the re-entrant tetragonal phase in the iron-based superconductor Ba0 .76K0.24Fe2As2 by DC magnetization and thermoelectrical measurements. The reversible magnetization confirms by a thermodynamic method that the spin alignment in the re-entrant C4 phase is out-of-plane, in agreement with an itinerant double-Q magnetic order [Allred et al., Nat. Phys. 12, 493 (2016)]. The Nernst coefficient shows the typical unusually large negative value in the stripe-type spin density wave (SDW) state owing to the Fermi surface reconstruction associated with SDW and nematic order. At the transition into the re-entrant C4 tetragonal phase it hardly changes, which could indicate that instead of a complete vanishing of the associated charge order, the spin reorientation could trigger a redistribution of the charges to form a secondary charge order, e.g. in form of a chequerboard-like pattern that no longer breaks the rotational C4 symmetry.

cond-mat.supr-con↗

arXiv2017

The role of the coherence length for the establishment of global phase coherence in three-dimensional arrays of ultra-thin quasi-one-dimensional superconducting Pb and NbN nanowires

We have fabricated 5 nm ultra-thin NbN nanowires that form a dense and regular array in the linear channels of mesoporous SBA-15 silica substrates. Bulk NbN is a well-known classical superconductor with Tc of 16 K. We show that, by being incorporated into this nanostructure, the composite material exhibits typical quasi-one-dimensional characteristics. We compare the superconducting properties with those of superconducting Pb nanowires of same dimensionality in identical configuration within the linear SBA-15 pores. While Pb nanowire arrays show a pronounced crossover from 1D superconductivity at high temperatures to a 3D bulk superconducting state in the low temperature regime with true zero resistance triggered by transversal Josephson interaction, this transition appears to be completely absent in the NbN nanowire array. The small coherence length in NbN, which strongly suppresses the Josephson coupling is discussed as the origin of this difference.

cond-mat.supr-con↗

arXiv2017

Odd-integer quantum Hall states and giant spin susceptibility in p-type few-layer WSe2

We fabricate high-mobility p-type few-layer WSe2 field-effect transistors and surprisingly observe a series of quantum Hall (QH) states following an unconventional sequence predominated by odd-integer states under a moderate strength magnetic field. By tilting the magnetic field, we discover Landau level (LL) crossing effects at ultra-low coincident angles, revealing that the Zeeman energy is about three times as large as the cyclotron energy near the valence band top at Γ valley. This result implies the significant roles played by the exchange interactions in p-type few-layer WSe2, in which itinerant or QH ferromagnetism likely occurs. Evidently, the Γ valley of few-layer WSe2 offers a unique platform with unusually heavy hole-carriers and a substantially enhanced g-factor for exploring strongly correlated phenomena.

cond-mat.mes-hall↗

arXiv2016

Type-controlled Nanodevices Based on Encapsulated Few-layer Black Phosphorus for Quantum Transport

We demonstrate that encapsulation of atomically thin black phosphorus (BP) by hexagonal boron nitride (h-BN) sheets is very effective for minimizing the interface impurities induced during fabrication of BP channel material for quantum transport nanodevices. Highly stable BP nanodevices with ultrahigh mobility and controllable types are realized through depositing appropriate metal electrodes after conducting a selective etching to the BP encapsulation structure. Chromium and titanium are suitable metal electrodes for BP channels to control the transition from a p-type unipolar property to ambipolar characteristic because of different work functions. Record-high mobilities of 6000 $cm^2V^{-1}s^{-1}$ and 8400 $cm^2V^{-1}s^{-1}$ are respectively obtained for electrons and holes at cryogenic temperatures. High-mobility BP devices enable the investigation of quantum oscillations with an indistinguishable Zeeman effect in laboratory magnetic field.

cond-mat.mes-hall↗

arXiv2016

Quantum Hall Effect in Ultrahigh Mobility Two-dimensional Hole Gas of Black Phosphorus

We demonstrate that a field effect transistor (FET) made of few layer black phosphorus (BP) encapsulated in hexagonal boron nitride (h-BN) in vacuum, exhibts the room temperature hole mobility of 5200 $cm^2/Vs$ being limited just by the phonon scattering. At cryogenic tempeature the FET mobility increases up to 45,000 $cm^2/Vs$, which is eight times higher compared with the mobility obtained in earlier reports. The unprecedentedly clean h-BN/BP/h-BN heterostructure exhibits Shubnikov-de Haas oscillations and quantum Hall effect with Landau level (LL) filling factors down to v=2 in conventional laboratory magnetic fields. Moreover, carrier density independent effective mass m=0.26 m_0 is measured, and Lande g-factor g=2.47 is reported. Furthermore, an indication for a distinct hole transport behavior with up and down spin orientation is found.

cond-mat.mes-hall↗

arXiv2016

Universal low-temperature Ohmic contacts for quantum transport in transition metal dichalcogenides

Low carrier mobility and high electrical contact resistance are two major obstacles prohibiting explorations of quantum transport in TMDCs. Here, we demonstrate an effective method to establish low-temperature Ohmic contacts in boron nitride encapsulated TMDC devices based on selective etching and conventional electron-beam evaporation of metal electrodes. This method works for most extensively studied TMDCs in recent years, including MoS2, MoSe2, WSe2, WS2, and 2H-MoTe2. Low electrical contact resistance is achieved at 2 K. All of the few-layer TMDC devices studied show excellent performance with remarkably improved field-effect mobilities ranging from 2300 cm2/V s to 16000 cm2/V s, as verified by the high carrier mobilities extracted from Hall effect measurements. Moreover, both high-mobility n-type and p-type TMDC channels can be realized by simply using appropriate contact metals. Prominent Shubnikov-de Haas oscillations have been observed and investigated in these high-quality TMDC devices.

cond-mat.mtrl-sci↗