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K. A. Villegas Rosales

Publications and source records attributed to K. A. Villegas Rosales.

15 recordsLinked to original sources

Signatures of correlated defects in an ultra-clean Wigner crystal in the extreme quantum limit

Low-disorder two-dimensional electron systems in the presence of a strong, perpendicular magnetic field terminate at very small Landau level filling factors in a Wigner crystal (WC), where the electrons form an ordered array to minimize the Coulomb repulsion. The nature of this exotic, many-body, quantum phase is yet to be fully understood and experimentally revealed. Here we probe one of WC's most fundamental parameters, namely the energy gap that determines its low-temperature conductivity, in record-mobility, ultra-high-purity, two-dimensional electrons confined to GaAs quantum wells. The WC domains in these samples contain $\simeq$ 1000 electrons. The measured gaps are a factor of three larger than previously reported for lower quality samples, and agree remarkably well with values predicted for the lowest-energy, intrinsic, hyper-corelated bubble defects in a WC made of flux-electron composite fermions, rather than bare electrons. The agreement is particularly noteworthy, given that the calculations are done for disorder-free composite fermion WCs, and there are no adjustable parameters. The results reflect the exceptionally high quality of the samples, and suggest that composite fermion WCs are indeed more stable compared to their electron counterparts.

cond-mat.mes-hall↗

Moving crystal phases of a quantum Wigner solid in an ultra-high-quality 2D electron system

In low-disorder, two-dimensional electron systems (2DESs), the fractional quantum Hall states at very small Landau level fillings ($ν$) terminate in a Wigner solid (WS) phase, where electrons arrange themselves in a periodic array. The WS is typically pinned by the residual disorder sites and manifests an insulating behavior, with non-linear current-voltage (\textit{I-V}) and noise characteristics. We report here, measurements on an ultra-low-disorder, dilute 2DES, confined to a GaAs quantum well. In the $ν< 1/5$ range, superimposed on a highly-insulating longitudinal resistance, the 2DES exhibits a developing fractional quantum Hall state at $ν=1/7$, attesting to its exceptional high quality, and dominance of electron-electron interaction in the low filling regime. In the nearby insulating phases, we observe remarkable non-linear \textit{I-V} and noise characteristics as a function of increasing current, with current thresholds delineating three distinct phases of the WS: a pinned phase (P1) with very small noise, a second phase (P2) in which $dV/dI$ fluctuates between positive and negative values and is accompanied by very high noise, and a third phase (P3) where $dV/dI$ is nearly constant and small, and noise is about an order of magnitude lower than in P2. In the depinned (P2 and P3) phases, the noise spectrum also reveals well-defined peaks at frequencies that vary linearly with the applied current, suggestive of washboard frequencies. We discuss the data in light of a recent theory that proposes different dynamic phases for a driven WS.

cond-mat.mes-hall↗

Delocalization and Universality of the Fractional Quantum Hall Plateau-to-Plateau Transitions

Disorder and electron-electron interaction play essential roles in the physics of electron systems in condensed matter. In two-dimensional, quantum Hall systems, extensive studies of disorder-induced localization have led to the emergence of a scaling picture with a single extended state, characterized by a power-law divergence of the localization length in the zero-temperature limit. Experimentally, scaling has been investigated via measuring the temperature dependence of plateau-to-plateau transitions between the integer quantum Hall states (IQHSs), yielding a critical exponent $κ\simeq 0.42$. Here we report scaling measurements in the fractional quantum Hall state (FQHS) regime where interaction plays a dominant role. Our study is partly motivated by recent calculations, based on the composite fermion theory, that suggest identical critical exponents in both IQHS and FQHS cases to the extent that the interaction between composite fermions is negligible. The samples used in our experiments are two-dimensional electron systems confined to GaAs quantum wells of exceptionally high quality. We find that $κ$ varies for transitions between different FQHSs observed on the flanks of Landau level filling factor $ν=1/2$, and has a value close to that reported for the IQHS transitions only for a limited number of transitions between high-order FQHSs with intermediate strength. We discuss possible origins of the non-universal $κ$ observed in our experiments.

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Composite Fermion Mass

Composite fermions (CFs), exotic quasi-particles formed by pairing an electron and an even number of magnetic flux quanta emerge at high magnetic fields in an interacting electron system, and can explain phenomena such as the fractional quantum Hall state (FQHS) and other many-body phases. CFs possess an effective mass ($m_{CF}$) whose magnitude is inversely related to the most fundamental property of a FQHS, namely its energy gap. We present here experimental measurements of $m_{CF}$ in ultra-high quality two-dimensional electron systems confined to GaAs quantum wells of varying thickness. An advantage of measuring $m_{CF}$ over gap measurements is that mass values are insensitive to disorder and are therefore ideal for comparison with theoretical calculations, especially for high-order FQHS. Our data reveal that $m_{CF}$ increases with increasing well width, reflecting a decrease in the energy gap as the electron layer becomes thicker and the in-plane Coulomb energy softens. Comparing our measured masses with available theoretical results, we find significant quantitative discrepancies, highlighting that more rigorous and accurate calculations are needed to explain the experimental data.

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Correlated states of 2D electrons near the Landau level filling $ν=1/7$

The ground state of two-dimensional electron systems (2DESs) at low Landau level filling factors ($ν\lesssim1/6$) has long been a topic of interest and controversy in condensed matter. Following the recent breakthrough in the quality of ultra-high-mobility GaAs 2DESs, we revisit this problem experimentally and investigate the impact of reduced disorder. In a GaAs 2DES sample with density $n=6.1\times10^{10}$ /cm$^2$ and mobility $μ=25\times10^6$ cm$^2$/Vs, we find a deep minimum in the longitudinal magnetoresistance ($R_{xx}$) at $ν=1/7$ when $T\simeq104$ mK. There is also a clear sign of a developing minimum in the $R_{xx}$ at $ν=2/13$. While insulating phases are still predominant when $ν\lesssim1/6$, these minima strongly suggest the existence of fractional quantum Hall states at filling factors that comply with the Jain sequence $ν=p/(2mp\pm1)$ even in the very low Landau level filling limit. The magnetic field dependent activation energies deduced from the relation $R_{xx}\propto e^{E_A/2kT}$ corroborate this view, and imply the presence of pinned Wigner solid states when $ν\neq p/(2mp\pm1)$. Similar results are seen in another sample with a lower density, further generalizing our observations.

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Fractional quantum Hall effect energy gap: role of electron layer thickness

The fractional quantum Hall effect (FQHE) stands as a quintessential manifestation of an interacting two-dimensional electron system. One of FQHE's most fundamental characteristics is the energy gap separating the incompressible ground state from its excitations. Yet, despite nearly four decades of investigations, a quantitative agreement between the theoretically calculated and experimentally measured energy gaps is lacking. Here we report a quantitative comparison between the measured energy gaps and the available theoretical calculations that take into account the role of finite layer thickness and Landau level mixing. Our systematic experimental study of the FQHE energy gaps uses very high-quality two-dimensional electron systems confined to GaAs quantum wells with varying well widths. All the measured energy gaps fall bellow the calculations, but as the electron layer thickness increases, the results of experiments and calculations come closer. Accounting for the role of disorder in a phenomenological manner, we find the measured energy gaps to be in reasonable quantitative agreement with calculations, although some discrepancies remain.

cond-mat.mes-hall↗

Observation of spontaneous valley polarization of itinerant electrons

Memory or transistor devices based on electron's spin rather than its charge degree of freedom offer certain distinct advantages and comprise a cornerstone of spintronics. Recent years have witnessed the emergence of a new field, valleytronics, which seeks to exploit electron's valley index rather than its spin. An important component in this quest would be the ability to control the valley index in a convenient fashion. Here we show that the valley polarization can be switched from zero to one by a small reduction in density, simply tuned by a gate bias, in a two-dimensional electron system. This phenomenon arises fundamentally as a result of electron-electron interaction in an itinerant, dilute electron system. Essentially, the kinetic energy favors an equal distribution of electrons over the available valleys, whereas the interaction between electrons prefers single-valley occupancy below a critical density. The gate-bias-tuned transition we observe is accompanied by a sudden, two-fold change in sample resistance, making the phenomenon of interest for potential valleytronic transistor device applications. Our observation constitutes a quintessential demonstration of valleytronics in a very simple experiment.

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Observation of Spontaneous Ferromagnetism in a Two-Dimensional Electron System

What are the ground states of an interacting, low-density electron system? In the absence of disorder, it has long been expected that as the electron density is lowered, the exchange energy gained by aligning the electron spins should exceed the enhancement in the kinetic (Fermi) energy, leading to a (Bloch) ferromagnetic transition. At even lower densities, another transition to a (Wigner) solid, an ordered array of electrons, should occur. Experimental access to these regimes, however, has been limited because of the absence of a material platform that supports an electron system with very high-quality (low disorder) and low density simultaneously. Here we explore the ground states of interacting electrons in an exceptionally-clean, two-dimensional electron system confined to a modulation-doped AlAs quantum well. The large electron effective mass in this system allows us to reach very large values of the interaction parameter $r_s$, defined as the ratio of the Coulomb to Fermi energies. As we lower the electron density via gate bias, we find a sequence of phases, qualitatively consistent with the above scenario: a paramagnetic phase at large densities, a spontaneous transition to a ferromagnetic state when $r_s$ surpasses 35, and then a phase with strongly non-linear current-voltage characteristics, suggestive of a pinned Wigner solid, when $r_s$ exceeds $\simeq 38$. However, our sample makes a transition to an insulating state at $r_s\simeq 27$, preceding the onset of the spontaneous ferromagnetism, implying that, besides interaction, the role of disorder must also be taken into account in understanding the different phases of a realistic dilute electron system.

cond-mat.str-el↗

Competition between fractional quantum Hall liquid and Wigner solid at small fillings: Role of layer thickness and Landau level mixing

What is the fate of the ground state of a two-dimensional electron system (2DES) at very low Landau level filling factors ($ν$) where interaction reigns supreme? An ordered array of electrons, the so-called Wigner crystal, has long been believed to be the answer. It was in fact the search for the elusive Wigner crystal that led to the discovery of an unexpected, incompressible liquid state, namely the fractional quantum Hall state at $ν=1/3$. Understanding the competition between the liquid and solid ground states has since remained an active field of fundamental research. Here we report experimental data for a new two-dimensional system where the electrons are confined to an AlAs quantum well. The exceptionally high quality of the samples and the large electron effective mass allow us to determine the liquid-solid phase diagram for the two-dimensional electrons in a large range of filling factors near $\simeq 1/3$ and $\simeq 1/5$. The data and their comparison with an available theoretical phase diagram reveal the crucial role of Landau level mixing and finite electron layer thickness in determining the prevailing ground states.

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Bloch Ferromagnetism of Composite Fermions

In 1929 Felix Bloch suggested that the paramagnetic Fermi sea of electrons should make a spontaneous transition to a fully-magnetized state at very low densities, because the exchange energy gained by aligning the spins exceeds the enhancement in the kinetic energy. We report here the observation of an abrupt, interaction-driven transition to full magnetization, highly reminiscent of Bloch ferromagnetism that has eluded experiments for the last ninety years. Our platform is the exotic two-dimensional Fermi sea of composite fermions at half-filling of the lowest Landau level. Via quantitative measurements of the Fermi wavevector, which provides a direct measure of the spin polarization, we observe a sudden transition from a partially-spin-polarized to a fully-spin-polarized ground state as we lower the composite fermions' density. Our detailed theoretical calculations provide a semi-quantitative account of this phenomenon.

cond-mat.str-el↗

Thermal and quantum melting phase diagrams for a magnetic-field-induced Wigner solid

A sufficiently large perpendicular magnetic field quenches the kinetic (Fermi) energy of an interacting two-dimensional (2D) system of fermions, making them susceptible to the formation of a Wigner solid (WS) phase in which the charged carriers organize themselves in a periodic array in order to minimize their Coulomb repulsion energy. In low-disorder 2D electron systems confined to modulation-doped GaAs heterostructures, signatures of a magnetic-field-induced WS appear at low temperatures and very small Landau level filling factors ($ν\simeq1/5$). In dilute GaAs 2D \textit{hole} systems, on the other hand, thanks to the larger hole effective mass and the ensuing Landau level mixing, the WS forms at relatively higher fillings ($ν\simeq1/3$). Here we report our measurements of the fundamental temperature vs. filling phase diagram for the 2D holes' WS-liquid \textit{thermal melting}. Moreover, via changing the 2D hole density, we also probe their Landau level mixing vs. filling WS-liquid \textit{quantum melting} phase diagram. We find our data to be in good agreement with the results of very recent calculations, although intriguing subtleties remain.

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Working principles of doping-well structures for high-mobility two-dimensional electron systems

Suppressing electron scattering is essential to achieve high-mobility two-dimensional electron systems (2DESs) that are clean enough to probe exotic interaction-driven phenomena. In heterostructures it is common practice to utilize modulation doping, where the ionized dopants are physically separated from the 2DES channel. The doping-well structure augments modulation doping by providing additional screening for all types of charged impurities in the vicinity of the 2DES, which is necessary to achieve record-breaking samples. Despite its prevalence in the design of ultra-high-mobility 2DESs, the working principles of the doping-well structure have not been reported. Here we elaborate on the mechanics of electron transfer from doping wells to the 2DES, focusing on GaAs/AlGaAs samples grown by molecular beam epitaxy. Based on this understanding we demonstrate how structural parameters in the doping well can be varied to tune the properties of the 2DES.

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Multivalley two-dimensional electron system in an AlAs quantum well with mobility exceeding $2\times10^6$ cm$^{2}$V$^{-1}$s$^{-1}$

Degenerate conduction-band minima, or `valleys', in materials such as Si, AlAs, graphene, and MoS$_2$ allow them to host two-dimensional electron systems (2DESs) that can access a valley degree of freedom. These multivalley 2DESs present exciting opportunities for both pragmatic and fundamental research alike because not only are they a platform for valleytronic devices, but they also provide a tool to tune and investigate the properties of complex many-body ground states. Here, we report ultra-high quality, modulation doped AlAs quantum wells containing 2DESs that occupy two anisotropic valleys and have electron mobilities peaking at $2.4\times10^6$ cm$^{2}$V$^{-1}$s$^{-1}$ at a density of $2.2\times10^{11}$ cm$^{-2}$. This is more than an order of magnitude improvement in mobility over previous results. The unprecedented quality of our samples is demonstrated by magneto-transport data that show high-order fractional quantum Hall minima up to the Landau level filling $ν=8/17$, and even the elusive $ν=1/5$ quantum Hall state.

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Observation of fractional quantum Hall effect in an InAs quantum well

The two-dimensional electron system in an InAs quantum well has emerged as a prime candidate for hosting exotic quasi-particles with non-Abelian statistics such as Majorana fermions and parafermions. To attain its full promise, however, the electron system has to be clean enough to exhibit electron-electron interaction phenomena. Here we report the observation of fractional quantum Hall effect in a very low disorder InAs quantum well with a well-width of 24 nm, containing a two-dimensional electron system with a density $n=7.8 \times 10^{11}$ cm$^{-2}$ and low-temperature mobility $1.8 \times 10^6$ cm$^2$/Vs. At a temperature of $\simeq35$ mK and $B\simeq24$ T, we observe a deep minimum in the longitudinal resistance, accompanied by a nearly quantized Hall plateau at Landau level filling factor $ν=4/3$.

physics.app-ph↗

Transference of Fermi Contour Anisotropy to Composite Fermions

There has been a surge of recent interest in the role of anisotropy in interaction-induced phenomena in two-dimensional (2D) charged carrier systems. A fundamental question is how an anisotropy in the energy-band structure of the carriers at zero magnetic field affects the properties of the interacting particles at high fields, in particular of the composite fermions (CFs) and the fractional quantum Hall states (FQHSs). We demonstrate here tunable anisotropy for holes and hole-flux CFs confined to GaAs quantum wells, via applying \textit{in situ} in-plane strain and measuring their Fermi wavevector anisotropy through commensurability oscillations. For strains on the order of $10^{-4}$ we observe significant deformations of the shapes of the Fermi contours for both holes and CFs. The measured Fermi contour anisotropy for CFs at high magnetic field ($α_\mathrm{CF}$) is less than the anisotropy of their low-field hole (fermion) counterparts ($α_\mathrm{F}$), and closely follows the relation: $α_\mathrm{CF} = \sqrt{α_\mathrm{F}}$. The energy gap measured for the $ν= 2/3$ FQHS, on the other hand, is nearly unaffected by the Fermi contour anisotropy up to $α_\mathrm{F} \sim 3.3$, the highest anisotropy achieved in our experiments.

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