arXiv · 1712.01220
Observation of fractional quantum Hall effect in an InAs quantum well
Abstract
The two-dimensional electron system in an InAs quantum well has emerged as a prime candidate for hosting exotic quasi-particles with non-Abelian statistics such as Majorana fermions and parafermions. To attain its full promise, however, the electron system has to be clean enough to exhibit electron-electron interaction phenomena. Here we report the observation of fractional quantum Hall effect in a very low disorder InAs quantum well with a well-width of 24 nm, containing a two-dimensional electron system with a density $n=7.8 \times 10^{11}$ cm$^{-2}$ and low-temperature mobility $1.8 \times 10^6$ cm$^2$/Vs. At a temperature of $\simeq35$ mK and $B\simeq24$ T, we observe a deep minimum in the longitudinal resistance, accompanied by a nearly quantized Hall plateau at Landau level filling factor $ν=4/3$.
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Meng K. Ma, Md. Shafayat Hossain, K. A. Villegas Rosales, H. Deng, T. Tschirky, W. Wegscheider, M. Shayegan. 2017-12-04. Observation of fractional quantum Hall effect in an InAs quantum well. https://doi.org/10.1103/physrevb.96.241301
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