arXiv subjects

K. Andre Mkhoyan

Publications and source records attributed to K. Andre Mkhoyan.

41 records · Page 3Linked to original sources

arXiv2018

Decomposition of La2-xSrxCuO4 into Several La2O3 Phases at Elevated Temperatures in Ultra-High Vacuum inside a Transmission Electron Microscope

We report the decomposition of La2-xSrxCuO4 into La2O3 and Cu nanoparticles in ultra-high vacuum, observed by in-situ heating experiments in a transmission electron microscope (TEM). The analysis of electron diffraction data reveals that the phase decomposition process starts at about 150 °C and is considerably expedited in the temperature range of 350-450 °C. Two major resultant solid phases are identified as metallic Cu and La2O3 by electron diffraction, simulation, and electron energy-loss spectroscopy (EELS) analyses. With the aid of calculations, La2O3 phases are further identified to be derivatives of a fluorite structure - fluorite, pyrochlore, and (distorted) bixbyite - characterized by different oxygen-vacancy order. Additionally, the bulk plasmon energy and the fine structures of the O K and La M4,5 EELS edges are reported for these structures, along with simulated O K X-ray absorption near-edge structure. The resultant Cu nanoparticles and La2O3 phases remain unchanged after cooling to room temperature.

cond-mat.mtrl-sci↗

arXiv2017

Room-temperature perpendicular magnetization switching through giant spin-orbit torque from sputtered BixSe(1-x) topological insulator material

The spin-orbit torque (SOT) arising from materials with large spin-orbit coupling promises a path for ultra-low power and fast magnetic-based storage and computational devices. We investigated the SOT from magnetron-sputtered BixSe(1-x) thin films in BixSe(1-x)/CoFeB heterostructures by using a dc planar Hall method. Remarkably, the spin Hall angle (SHA) was found to be as large as 18.83, which is the largest ever reported at room temperature (RT). Moreover, switching of a perpendicular CoFeB multilayer using SOT from the BixSe(1-x) has been observed with the lowest-ever switching current density reported in a bilayer system: 2.3 * 105 A/cm2 at RT. The giant SHA, smooth surface, ease of growth of the films on silicon substrate, successful growth and switching of a perpendicular CoFeB multilayer on BixSe(1-x) film opens a path for use of BixSe(1-x) topological insulator (TI) material as a spin-current generator in SOT-based memory and logic devices.

cond-mat.mes-hall↗

arXiv2016

Electronic structure of BaSnO3 investigated by high-energy-resolution electron energy-loss spectroscopy and ab initio calculations

There has been growing interest in perovskite BaSnO3 due to its desirable properties for oxide electronic devices including high electron mobility at room temperature and optical transparency. As these electronic and optical properties originate largely from the electronic structure of the material, here the basic electronic structure of epitaxially-grown BaSnO3 films is studied using high-energy-resolution electron energy-loss spectroscopy in a transmission electron microscope and ab initio calculations. This study provides a detailed description of the dielectric function of BaSnO3, including the energies of bulk plasmon excitations and critical interband electronic transitions, the band structure and partial densities of states, the measured band gap, and more. To make the study representative of a variety of deposition methods, results from BaSnO3 films grown by both hybrid molecular beam epitaxy and high pressure oxygen sputter deposition are reported.

cond-mat.mtrl-sci↗

arXiv2016

A New Line Defect in NdTiO3 Perovskite

Perovskite oxides form an eclectic class of materials owing to their structural flexibility in accommodating cations of different sizes and valences. They host well known point and planar defects, but so far no line defect has been identified other than dislocations. Using analytical scanning transmission electron microscopy (STEM) and ab initio calculations we have detected and characterized the atomic and electronic structures of a novel line defect in NdTiO3 perovskite. It appears in STEM images as a perovskite cell rotated by 45 degrees. It consists of self-organized Ti-O vacancy lines replaced by Nd columns surrounding a central Ti-O octahedral chain containing Ti4+ ions, as opposed to Ti3+ in the host. The distinct Ti valence in this line defect introduces the possibility of engineering exotic conducting properties in a single preferred direction and tailoring novel desirable functionalities in this Mott insulator.

cond-mat.mtrl-sci↗

arXiv2015

Mapping the chemical potential dependence of current-induced spin polarization in a topological insulator

We report electrical measurements of the current-induced spin polarization of the surface current in topological insulator devices where contributions from bulk and surface conduction can be disen- tangled by electrical gating. The devices use a ferromagnetic tunnel junction (permalloy/Al2O3) as a spin detector on a back-gated (Bi,Sb)2Te3 channel. We observe hysteretic voltage signals as the magnetization of the detector ferromagnet is switched parallel or anti-parallel to the spin polariza- tion of the surface current. The amplitude of the detected voltage change is linearly proportional to the applied DC bias current in the (Bi,Sb)2Te3 channel. As the chemical potential is tuned from the bulk bands into the surface state band, we observe an enhancement of the spin-dependent voltages up to 300% within the range of the electrostatic gating. Using a simple model, we extract the spin polarization near charge neutrality (i.e. the Dirac point).

cond-mat.mes-hall↗