arXiv subjects

K. Ensslin

Publications and source records attributed to K. Ensslin.

165 records · Page 10Linked to original sources

arXiv1999

A low-temperature dynamic mode scanning force microscope operating in high magnetic fields

A scanning force microscope was implemented operating at temperatures below 4.2K and in magnetic fields up to 8T. Piezoelectric quartz tuning forks were employed for non optical tip-sample distance control in the dynamic operation mode. Fast response was achieved by using a phase-locked loop for driving the mechanical oscillator. Possible applications of this setup for various scanning probe techniques are discussed.

cond-mat↗

arXiv1998

Variation of elastic scattering across a quantum well

The Drude scattering times of electrons in two subbands of a parabolic quantum well have been studied at constant electron sheet density and different positions of the electron distribution along the growth direction. The scattering times obtained by magnetotransport measurements decrease as the electrons are displaced towards the well edges, although the lowest-subband density increases. By comparing the measurements with calculations of the scattering times of a two-subband system, new information on the location of the relevant scatterers and the anisotropy of intersubband scattering is obtained. It is found that the scattering time of electrons in the lower subband depends sensitively on the position of the scatterers, which also explains the measured dependence of the scattering on the carrier density. The measurements indicate segregation of scatterers from the substrate side towards the quantum well during growth.

cond-mat.mes-hall↗

arXiv1998

Metal-Insulator Transition in a Disordered Two-Dimensional Electron Gas in GaAs-AlGaAs at zero Magnetic Field

A metal-insulator transition in two-dimensional electron gases at B=0 is found in Ga(Al)As heterostructures, where a high density of self-assembled InAs quantum dots is incorporated just 3 nm below the heterointerface. The transition occurs at resistances around h/e^2 and critical carrier densities of 1.2 10^11cm^-2. Effects of electron-electron interactions are expected to be rather weak in our samples, while disorder plays a crucial role.

cond-mat.mes-hall↗