arXiv subjects

K. Ensslin

Publications and source records attributed to K. Ensslin.

At least 163 records · Page 9Linked to original sources

arXiv2001

Analysis of the resistance in p-SiGe over a wide temperature range

The temperature dependence of a system exhibiting a `metal-insulator transition in two dimensions at zero magnetic field' (MIT) is studied up to 90K. Using a classical scattering model we are able to simulate the non-monotonic temperature dependence of the resistivity in the metallic high density regime. We show that the temperature dependence arises from a complex interplay of metallic and insulating contributions contained in the calculation of the scattering rate $1/\td(E,T)$, each dominating in a limited temperature range.

cond-mat.str-el↗

arXiv2001

The Hanbury Brown and Twiss Experiment with Fermions

We realized an equivalent Hanbury Brown and Twiss experiment for a beam of electrons in a two dimensional electron gas in the quantum Hall regime. A metallic split gate serves as a tunable beam splitter which is used to partition the incident beam into transmitted and reflected partial beams. The current fluctuations in the reflected and transmitted beam are fully anticorrelated demonstrating that fermions tend to exclude each other (anti-bunching). If the occupation probability of the incident beam is lowered by an additional gate, the anticorrelation is reduced and disappears in the classical limit of a highly diluted beam.

cond-mat.mes-hall↗

arXiv2000

Analysis of the temperature-dependent quantum point contact conductance in view of the metal-insulator transition in two dimensions

The temperature dependence of the conductance of a quantum point contact has been measured. The conductance as a function of the Fermi energy shows temperature-independent fixed points, located at roughly multiple integers of $e^{2}/h$. Around the first fixed point at e$^{2}$/h, the experimental data for different temperatures can been scaled onto a single curve. For pure thermal smearing of the conductance steps, a scaling parameter of one is expected. The measured scaling parameter, however, is significantly larger than 1. The deviations are interpreted as a signature of the potential landscape of the quantum point contact, and of the source-drain bias voltage. We relate our results phenomenologically to the metal-insulator transition in two dimensions.

cond-mat.mes-hall↗

arXiv2000

Single hole transistor in a p-Si/SiGe quantum well

A single hole transistor is patterned in a p-Si/SiGe quantum well by applying voltages to nanostructured top gate electrodes. Gating is achieved by oxidizing the etched semiconductor surface and the mesa walls before evaporation of the top gates. Pronounced Coulomb blockade effects are observed at small coupling of the transistor island to source and drain.

cond-mat.mes-hall↗

arXiv2000

Transport properties of quantum dots with hard walls

Quantum dots are fabricated in a Ga[Al]As-heterostructure by local oxidation with an atomic force microscope. This technique, in combination with top gate voltages, allows us to generate steep walls at the confining edges and small lateral depletion lengths. The confinement is characterized by low-temperature magnetotransport measurements, from which the dots' energy spectrum is reconstructed. We find that in small dots, the addition spectrum can qualitatively be described within a Fock-Darwin model. For a quantitative analysis, however, a hard-wall confinement has to be considered. In large dots, the energy level spectrum deviates even qualitatively from a Fock-Darwin model. The maximum wall steepness achieved is of the order of 0.4 meV/nm.

cond-mat.mes-hall↗

arXiv2000

Shot Noise by Quantum Scattering in Chaotic Cavities

We have experimentally studied shot noise of chaotic cavities defined by two quantum point contacts in series. The cavity noise is determined as 1/4*2e|I| in agreement with theory and can be well distinguished from other contributions to noise generated at the contacts. Subsequently, we have found that cavity noise decreases if one of the contacts is further opened and reaches nearly zero for a highly asymmetric cavity.

cond-mat.mes-hall↗

arXiv2000

Force-distance studies with piezoelectric tuning forks below 4.2 K

Piezoelectric quartz tuning forks have been employed as the force sensor in a dynamic mode scanning force microscope operating at temperatures down to 1.7 K at He-gas pressures of typically 5 mbar. An electrochemically etched tungsten tip glued to one of the tuning fork prongs acts as the local force sensor. Its oscillation amplitude can be tuned between a few angstroms and tens of nanometers. Quality factors of up to 120000 allow a very accurate measurement of small frequency shifts. Three calibration procedures are compared which allow the determination of the proportionality constant between frequency shift and local force gradient based on the harmonic oscillator model and on electrostatic forces. The calibrated sensor is then used for a study of the interaction between the tip and a HOPG substrate. Force gradient and dissipated power can be recorded simultane-ously. It is found that during approaching the tip to the sample considerable power starts to be dissipated although the force gradient is still negative, i.e. the tip is still in the attractive regime. This observation concurs with experiments with true atomic resolution which seem to require the same tip-sample separation.

cond-mat↗

arXiv2000

Operation characteristics of piezoelectric quartz tuning forks in high magnetic fields at liquid helium temperatures

Piezoelectric quartz tuning forks are investigated in view of their use as force sensors in dynamic mode scanning probe microscopy at temperatures down to 1.5 K and in magnetic fields up to 8 T. The mechanical properties of the forks are extracted from the frequency dependent admittance and simultaneous interferometric measurements. The performance of the forks in a cryogenic environment is investigated. Force-distance studies performed with these sensors at low temperatures are presented.

cond-mat↗

arXiv2000

InAs-AlSb quantum wells in tilted magnetic fields

InAs-AlSb quantum wells are investigated by transport experiments in magnetic fields tilted with respect to the sample normal. Using the coincidence method we find for magnetic fields up to 28 T that the spin splitting can be as large as 5 times the Landau splitting. We find a value of the g-factor of about 13. For small even-integer filling factors the corresponding minima in the Shubnikov-de Haas oscillations cannot be tuned into maxima for arbitrary tilt angles. This indicates the anti-crossing of neighboring Landau and spin levels. Furthermore we find for particular tilt angles a crossover from even-integer dominated Shubnikov-de Haas minima to odd-integer minima as a function of magnetic field.

cond-mat.mes-hall↗

arXiv2000

Analysis of the Metallic Phase of Two-Dimensional Holes in SiGe in Terms of Temperature Dependent Screening

We find that temperature dependent screening can quantitatively explain the metallic behaviour of the resistivity on the metallic side of the so-called metal-insulator transition in p-SiGe. Interference and interaction effects exhibit the usual insulating behaviour which is expected to overpower the metallic background at sufficiently low temperatures. We find empirically that the concept of a Fermi-liquid describes our data in spite of the large r_s = 8.

cond-mat.str-el↗

arXiv2000

Signatures of spin pairing in a quantum dot in the Coulomb blockade regime

Coulomb blockade resonances are measured in a GaAs quantum dot in which both shape deformations and interactions are small. The parametric evolution of the Coulomb blockade peaks shows a pronounced pair correlation in both position and amplitude, which is interpreted as spin pairing. As a consequence, the nearest-neighbor distribution of peak spacings can be well approximated by a smeared bimodal Wigner surmise, provided that interactions which go beyond the constant interaction model are taken into account.

cond-mat.mes-hall↗

arXiv1999

Metal-Insulator Transition in a 2-Dimensional System with an Easy Spin Axis

The low-temperature resistivity of a SiGe 2-dimensional hole gas has been studied using the gate controlled carrier density as a parameter. A metal-insulator transition is seen both in the temperature and in the electric field behaviour. Values of 1 for the dynamical exponent and 2.85 for the correlation length exponent are obtained from scaling plots. No quenching of the metallic phase in a parallel magnetic field is observed. Since in our system there is an easy axis for magnetization, this result supports the hypothesis that the transition is related to spin interactions.

cond-mat.mes-hall↗

arXiv1999

Coexistence of Weak Localization and a Metallic Phase in Si/SiGe Quantum Wells

Magnetoresistivity measurements on p-type Si/SiGe quantum wells reveal the coexistence of a metallic behavior and weak localization. Deep in the metallic regime, pronounced weak localization reduces the metallic behavior around zero magnetic field without destroying it. In the insulating phase, a positive magnetoresistivity emerges close to B=0, possibly related to spin-orbit interactions.

cond-mat.mes-hall↗

arXiv1999

In-plane gate single-electron transistor in Ga[Al]As fabricated by scanning probe lithography

A single-electron transistor has been realized in a Ga[Al]As heterostructure by oxidizing lines in the GaAs cap layer with an atomic force microscope. The oxide lines define the boundaries of the quantum dot, the in-plane gate electrodes, and the contacts of the dot to source and drain. Both the number of electrons in the dot as well as its coupling to the leads can be tuned with an additional, homogeneous top gate electrode. Pronounced Coulomb blockade oscillations are observed as a function of voltages applied to different gates. We find that, for positive top-gate voltages, the lithographic pattern is transferred with high accuracy to the electron gas. Furthermore, the dot shape does not change significantly when in-plane voltages are tuned.

cond-mat.mes-hall↗

arXiv1999

Shifting a Quantum Wire through a Disordered Crystal: Observation of Conductance Fluctuations in Real Space

A quantum wire is spatially displaced by suitable electric fields with respect to the scatterers inside a semiconductor crystal. As a function of the wire position, the low-temperature resistance shows reproducible fluctuations. Their characteristic temperature scale is a few hundred millikelvin, indicating a phase-coherent effect. Each fluctuation corresponds to a single scatterer entering or leaving the wire. This way, scattering centers can be counted one by one.

cond-mat.mes-hall↗

arXiv1999

Non-Gaussian distribution of nearest-neighbour Coulomb peak spacings in metallic single electron transistors

The distribution of nearest-neighbour spacings of Coulomb blockade oscillation peaks in normal conducting aluminum single electron transistors is found to be non-Gaussian. A pronounced tail to reduced spacings is observed, which we attribute to impurity-specific parametric charge rearrangements close to the transistor. Our observation may explain the absence of a Wigner-Dyson distribution in the experimental nearest-neighbour spacing distributions in semiconductor quantum dots.

cond-mat.mes-hall↗

arXiv1999

Zero-field spin splitting in InAs-AlSb quantum wells revisited

We present magnetotransport experiments on high-quality InAs-AlSb quantum wells that show a perfectly clean single-period Shubnikov-de Haas oscillation down to very low magnetic fields. In contrast to theoretical expectations based on an asymmetry induced zero-field spin splitting, no beating effect is observed. The carrier density has been changed by the persistent photo conductivity effect as well as via the application of hydrostatic pressure in order to influence the electric field at the interface of the electron gas. Still no indication of spin splitting at zero magnetic field was observed in spite of highly resolved Shubnikov- de Haas oscillations up to filling factors of 200. This surprising and unexpected result is discussed in view of other recently published data.

cond-mat.mes-hall↗

arXiv1999

Mode Spectroscopy and Level Coupling in Ballistic Electron Waveguides

A tunable quantum point contact with modes occupied in both transverse directions is studied by magnetotransport experiments. We use conductance quantization of the one-dimensional subbands as a tool to determine the mode spectrum. A magnetic field applied along the direction of the current flow couples the modes. This can be described by an extension of the Darwin-Fock model. Anticrossings are observed as a function of the magnetic field, but not for zero field or perpendicular field directions, indicating coupling of the subbands due to nonparabolicity in the electrical confinement.

cond-mat.mes-hall↗