arXiv subjects

K. Runge

Publications and source records attributed to K. Runge.

42 records · Page 3Linked to original sources

arXiv2006

Nearby Supernova Factory Observations of SN 2006D: On Sporadic Carbon Signatures in Early Type Ia Supernova Spectra

We present four spectra of the Type Ia supernova (SN Ia) 2006D extending from -7 to +13 days with respect to B-band maximum. The spectra include the strongest signature of unburned material at photospheric velocities observed in a SN Ia to date. The earliest spectrum exhibits C II absorption features below 14,000 km/s, including a distinctive C II λ6580 absorption feature. The carbon signatures dissipate as the SN approaches peak brightness. In addition to discussing implications of photospheric-velocity carbon for white dwarf explosion models, we outline some factors that may influence the frequency of its detection before and around peak brightness. Two effects are explored in this regard, including depopulation of the C II optical levels by non-LTE effects, and line-of-sight effects resulting from a clumpy distribution of unburned material with low volume-filling factor.

astro-ph↗

arXiv1998

X-ray Imaging Using a Hybrid Photon Counting GaAs Pixel Detector

The performance of hybrid GaAs pixel detectors as X-ray imaging sensors were investigated at room temperature. These hybrids consist of 300 mu-m thick GaAs pixel detectors, flip-chip bonded to a CMOS Single Photon Counting Chip (PCC). This chip consists of a matrix of 64 x 64 identical square pixels (170 mu-m x 170 mu-m) and covers a total area of 1.2 cm**2. The electronics in each cell comprises a preamplifier, a discriminator with a 3-bit threshold adjust and a 15-bit counter. The detector is realized by an array of Schottky diodes processed on semi-insulating LEC-GaAs bulk material. An IV-charcteristic and a detector bias voltage scan showed that the detector can be operated with voltages around 200 V. Images of various objects were taken by using a standard X-ray tube for dental diagnostics. The signal to noise ratio (SNR) was also determined. The applications of these imaging systems range from medical applications like digital mammography or dental X-ray diagnostics to non destructive material testing (NDT). Because of the separation of detector and readout chip, different materials can be investigated and compared.

physics.ins-det↗

arXiv1997

AC-coupled GaAs microstrip detectors with a new type of integrated bias resistors

Full size single-sided GaAs microstrip detectors with integrated coupling capacitors and bias resistors have been fabricated on 3'' substrate wafers. PECVD deposited SiO_2 and SiO_2/Si_3N_4 layers were used to provide coupling capacitaces of 32.5 pF/cm and 61.6 pF/cm, respectively. The resistors are made of sputtered CERMET using simple lift of technique. The sheet resistivity of 78 kOhm/sq. and the thermal coefficient of resistance of less than 4x10^-3 / degree C satisfy the demands of small area biasing resistors, working on a wide temperature range.

physics.ins-det↗

arXiv1997

Radiation damage to neutron and proton irradiated GaAs particle detectors

The radiation damage in 200 um thick Schottky diodes made on semi-insulating (SI) undoped GaAs Liquid Encapsulated Czochralski (LEC) bulk material with resistivities between 0.4 and 8.9*10E7 Ohm*cm were studied using alpha-spectroscopy, signal response to minimum ionising particles (MIP), I-V and CV-measurements. The results have been analysed to investigate the influence of the substrate resistivity on the detector performance after neutron and proton irradiation. The leakage current density, signal response to alpha-particles and MIPs show a strong dependence on the resistivity before and after irradiation. An observed decrease of the electron mean free drift length before and after irradiation with increasing substrate resistivity can be explained by a model involving the different ionisation ratios of defects, which are introduced by the irradiation. Comparison of the radiation damage due to neutrons and protons gives a hardness factor of 7+-0.9 for 24 GeV/c protons. The best detectors show a response to MIPs of 5250 e- at 200 V reverse bias after a irradiation level of 2*10E14 p/cm^2.

hep-ex↗

arXiv1997

Analysis of Trapping and Detrapping in Semi-Insulating GaAs Detectors

To investigate the trapping and detrapping in SI-GaAs particle detectors we analyzed the signals caused by 5.48 MeV alpha particles with a charge sensitive preamplifier. From the bias and temperature dependence of these signals we determine the activation energies of two electron traps. Additional simulation and measurements of the lifetime as a function of resistivity have shown that the EL2+ is the dominant electron trap in semi-insulating GaAs.

hep-ex↗

arXiv1997

Radiation studies for GaAs in the ATLAS Inner Detector

We estimate the hardness factors and the equivalent 1 MeV neutron fluences for hadrons fluences expected at the GaAs positions wheels in the ATLAS Inner Detector. On this basis the degradation of the GaAs particle detectors made from different substrates as a function of years LHC operation is predicted.

hep-ex↗