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arXiv · hep-ex/9701018

Analysis of Trapping and Detrapping in Semi-Insulating GaAs Detectors

M. Rogalla·Th. Eich·N. Evans·R. Geppert·R. Goeppert·R. Irsigler·J. Ludwig·K. Runge·Th. Schmid·D. G. Marder
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Abstract

To investigate the trapping and detrapping in SI-GaAs particle detectors we analyzed the signals caused by 5.48 MeV alpha particles with a charge sensitive preamplifier. From the bias and temperature dependence of these signals we determine the activation energies of two electron traps. Additional simulation and measurements of the lifetime as a function of resistivity have shown that the EL2+ is the dominant electron trap in semi-insulating GaAs.

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M. Rogalla, Th. Eich, N. Evans, R. Geppert, R. Goeppert, R. Irsigler, J. Ludwig, K. Runge, Th. Schmid, D. G. Marder. 1997-01-29. Analysis of Trapping and Detrapping in Semi-Insulating GaAs Detectors. https://doi.org/10.1016/s0168-9002(97)00632-3

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