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K. Shen

Publications and source records attributed to K. Shen.

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Hamiltonian non-Hermicity: accurate dynamics with the multiple Davydov D$_2$ Ans\"atze

We examine the applicability of the numerically accurate method of time dependent variation with multiple Davydov Ansatze (mDA) to non-Hermitian systems. Three systems of interest includes: a non-Hermitian system of dissipative Landau-Zener transitions, a non-Hermitian, multimode Jaynes-Cummings model, and a dissipative Holstein-Tavis-Cummings model, where complex many-body dynamics are accurately captured by the mDA method. Our findings highlight the versatility of the mDA as a powerful numerical tool for investigating complex many-body non-Hermitian systems, which can be extended to explore diverse phenomena such as skin effects, excited-state dynamics, and spectral topology in the non-Hermitian field.

quant-ph

A Perspective on Ferrons

The duality between electric and magnetic dipoles in electromagnetism only partly applies to condensed matter. In particular, the elementary excitations of the magnetic and ferroelectric orders, namely magnons and ferrons, respectively, have received asymmetric attention from the condensed matter community in the past. In this perspective, we introduce and summarize the current state of the budding field of "ferronics" and speculate about its potential applications in thermal, information, and communication technology.

cond-mat.mes-hall

Theory of coupled spin-charge transport due to spin-orbit interaction in inhomogeneous two-dimensional electron liquids

Spin-orbit interactions in two-dimensional electron liquids are responsible for many interesting transport phenomena in which particle currents are converted to spin polarizations and spin currents and viceversa. Prime examples are the spin Hall effect, the Edelstein effect, and their inverses. By similar mechanisms it is also possible to partially convert an optically induced electron-hole density wave to a spin density wave and viceversa. In this paper we present a unified theoretical treatment of these effects based on quantum kinetic equations that include not only the intrinsic spin-orbit coupling from the band structure of the host material, but also the spin-orbit coupling due to an external electric field and a random impurity potential. The drift-diffusion equations we derive in the diffusive regime are applicable to a broad variety of experimental situations, both homogeneous and non-homogeneous, and include on equal footing "skew scattering" and "side-jump" from electron-impurity collisions. As a demonstration of the strength and usefulness of the theory we apply it to the study of several effects of current experimental interest: the inverse Edelstein effect, the spin-current swapping effect, and the partial conversion of an electron-hole density wave to a spin density wave in a two-dimensional electron gas with Rashba and Dresselhaus spin-orbit couplings, subject to an electric field.

cond-mat.mes-hall

Electron spin rephasing in $n$-type (001) GaAs quantum wells

We investigate the electron spin dephasing in the presence of spin phase recovering by a serried $π$-pulse sequence in $n$-type (001) GaAs quantum wells in a wide range of temperature and density regimes. Our numerical calculation is based on the kinetic spin Bloch equation approach with all the relevant scatterings explicitly included. We find that the rephasing pulse sequence with a long inter-pulse spacing only has a marginal influence on the spin lifetime in both the strong and weak scattering limits. We show that the spin lifetime can be significantly increased by reducing the inter-pulse spacing. More interestingly, we show that the temperature and density dependences of the spin lifetime in the case of short inter-pulse spacing coincide with those of the momentum scattering time in the low temperature regime, where nonmonotonic behaviors can appear. The origin of this feature is that the scattering under the quick rephasing manipulation mainly performs as the source of the dephasing channel instead of the key to suppress the inhomogeneous broadening. The contributions of the relevant scattering mechanisms are also discussed.

cond-mat.mes-hall

Energy spectra of three electrons in Si/SiGe single and vertically coupled double quantum dots

We study three-electron energy spectra in Si/SiGe single and vertically coupled double quantum dots where all the relevant effects, such as, the Zeeman splitting, spin-orbit coupling, valley coupling and electron-electron Coulomb interaction are explicitly included. In the absence of magnetic field, our results in single quantum dots agree well with the experiment by Borselli {\em et al.} [Appl. Phys. Lett. {\bf 98}, 123118 (2011)]. We identify the spin and valley configurations of the ground state in the experimental cases and give a complete phase-diagram-like picture of the ground state configuration with respect to the dot size and valley splitting. We also explicitly investigate the three-electron energy spectra of the pure and mixed valley configurations with magnetic fields in both Faraday and Voigt configurations. We find that the ground state can be switched between doublet and quartet by tuning the magnetic field and/or dot size. The three-electron energy spectra present many anticrossing points between different spin states due to the spin-orbit coupling, which are expected to benefit the spin manipulation. We show that the negligibly small intervalley Coulomb interaction can result in magnetic-field independent quartet-doublet degeneracy in the three-electron energy spectrum of the mixed valley configuration. Furthermore, we study the barrier-width and barrier-height dependences in vertically coupled double quantum dots with both pure and mixed valley configurations. Similar to the single quantum dot case, anticrossing behavior and quartet-doublet degeneracy are observed.

cond-mat.mes-hall

Hole spin relaxation and coefficients in Landau-Lifshitz-Gilbert equation in ferromagnetic GaMnAs

We investigate the temperature dependence of the coefficients in the Landau-Lifshitz-Gilbert equation in ferromagnetic GaMnAs by employing the Zener model. We first calculate the hole spin relaxation time based on the microscopic kinetic equation. We find that the hole spin relaxation time is typically several tens femtoseconds and can present a nonmonotonic temperature dependence due to the variation of the interband spin mixing, influenced by the temperature related Zeeman splitting. With the hole spin relaxation time, we are able to calculate the coefficients in the Landau-Lifshitz-Gilbert equation, such as the Gilbert damping, nonadiabatic spin torque, spin stiffness and vertical spin stiffness coefficients. We find that the nonadiabatic spin torque coefficient $β$ is around $0.1\sim 0.3$ at low temperature, which is consistent with the experiment [Adam {\em et al.}, Phys. Rev. B {\bf 80}, 193204 (2009)]. As the temperature increases, $β$ monotonically increases and can exceed one in the vicinity of the Curie temperature. In the low temperature regime with $β<1$, the Gilbert damping coefficient $α$ increases with temperature, showing good agreement with the experiments [Sinova {\em et al.}, Phys. Rev. B {\bf 69}, 085209 (2004); Khazen {\em et al.}, {\em ibid.} {\bf 78}, 195210 (2008)]. Furthermore, we predict that $α$ decreases with increasing temperature once $β>1$ near the Curie temperature. We also find that the spin stiffness decreases with increasing temperature, especially near the Curie temperature due to the modification of the finite $β$. Similar to the Gilbert damping, the vertical spin stiffness coefficient is also found to be nonmonotonically dependent on the temperature.

cond-mat.mtrl-sci

Spin-orbit coupling and $g$-factor of $X$-valley in cubic GaN

We report our theoretically investigation on the spin-orbit coupling and $g$-factor of the $X$-valley in cubic GaN. We find that the spin-orbit coupling coefficient from $sp^3d^5s^\ast$ tight-binding model is 0.029\,eV$\cdot$Å, which is comparable with that in cubic GaAs. By employing the ${\bf k}\cdot{\bf p}$ theory, we find that the $g$-factor in this case is only slightly different from the free electron $g$-factor. These results are expected to be important for the on-going study on spin dynamics far away from equilibrium in cubic GaN.

cond-mat.mtrl-sci

Spin diffusion in $n$-type (111) GaAs quantum wells

We utilize the kinetic spin Bloch equation approach to investigate the steady-state spin diffusion in $n$-type (111) GaAs quantum wells, where the in-plane components of the Dresselhaus spin-orbit coupling term and the Rashba term can be partially canceled by each other. A peak of the spin diffusion length due to the cancellation is predicted in the perpendicular electric field dependence. It is shown that the spin diffusion length around the peak can be markedly controlled via temperature and doping. When the electron gas enters into the degenerate regime, the electron density also leads to observable influence on the spin diffusion in the strong cancellation regime. Furthermore, we find that the spin diffusion always presents strong anisotropy with respect to the direction of the injected spin polarization. The anisotropic spin diffusion depends on whether the electric field is far away from or in the strong cancellation regime.

cond-mat.mes-hall

Existence of vertical spin stiffness in Landau-Lifshitz-Gilbert equation in ferromagnetic semiconductors

We calculate the magnetization torque due to the spin polarization of the itinerant electrons by deriving the kinetic spin Bloch equations based on the $s$-$d$ model. We find that the first-order gradient of the magnetization inhomogeneity gives rise to the current-induced torques, which are consistent to the previous works. At the second-order gradient, we find an effective magnetic field perpendicular to the spin stiffness filed. This field is proportional to the nonadiabatic parameter $β$. We show that this vertical spin stiffness term can significantly modify the domain-wall structure in ferromagnetic semiconductors and hence should be included in the Landau-Lifshitz-Gilbert equation in studying the magnetization dynamics.

cond-mat.mtrl-sci

Hole spin relaxation in intrinsic and $p$-type bulk GaAs

We investigate hole spin relaxation in intrinsic and $p$-type bulk GaAs from a fully microscopic kinetic spin Bloch equation approach. In contrast to the previous study on hole spin dynamics, we explicitly include the intraband coherence and the nonpolar hole-optical-phonon interaction, both of which are demonstrated to be of great importance to the hole spin relaxation. The relative contributions of the D'yakonov-Perel' and Elliott-Yafet mechanisms on hole spin relaxation are also analyzed. In our calculation, the screening constant, playing an important role in the hole spin relaxation, is treated with the random phase approximation. In intrinsic GaAs, our result shows good agreement with the experiment data at room temperature, where the hole spin relaxation is demonstrated to be dominated by the Elliott-Yafet mechanism. We also find that the hole spin relaxation strongly depends on the temperature and predict a valley in the density dependence of the hole spin relaxation time at low temperature due to the hole-electron scattering. In $p$-type GaAs, we predict a peak in the spin relaxation time against the hole density at low temperature, which originates from the distinct behaviors of the screening in the degenerate and nondegenerate regimes. The competition between the screening and the momentum exchange during scattering events can also lead to a valley in the density dependence of the hole spin relaxation time in the low density regime. At high temperature, the effect of the screening is suppressed due to the small screening constant. Moreover, we predict a nonmonotonic dependence of the hole spin relaxation time on temperature associated with the screening together with the hole-phonon scattering. Finally, we find that the D'yakonov-Perel' mechanism can markedly contribute to the .... (omitted due to the limit of space)

cond-mat.mes-hall

Singlet-triplet relaxation in multivalley silicon single quantum dots

We investigate the singlet-triplet relaxation due to the spin-orbit coupling together with the electron-phonon scattering in two-electron multivalley silicon single quantum dots, using the exact diagonalization method and the Fermi golden rule. The electron-electron Coulomb interaction, which is crucial in the electronic structure, is explicitly included. The multivalley effect induced by the interface scattering is also taken into account. We first study the configuration with a magnetic field in the Voigt configuration and identify the relaxation channel of the experimental data by Xiao {\em et al.} [Phys. Rev. Lett. {\bf 104}, 096801 (2010)]. Good agreement with the experiment is obtained. Moreover, we predict a peak in the magnetic-field dependence of the singlet-triplet relaxation rate induced by the anticrossing of the singlet and triplet states. We then work on the system with a magnetic field in the Faraday configuration, where the different values of the valley splitting are discussed. In the case of large valley splitting, we find the transition rates can be effectively manipulated by varying the external magnetic field and the dot size. The intriguing features of the singlet-triplet relaxation in the vicinity of the anticrossing point are analyzed. In the case of small valley splitting, we find that the transition rates are much smaller than those in the case of large valley splitting, resulting from the different configurations of the triplet states.

cond-mat.mes-hall

Effect of spin-conserving scattering on Gilbert damping in ferromagnetic semiconductors

The Gilbert damping in ferromagnetic semiconductors is theoretically investigated based on the $s$-$d$ model. In contrast to the situation in metals, all the spin-conserving scattering in ferromagnetic semiconductors supplies an additional spin relaxation channel due to the momentum dependent effective magnetic field of the spin-orbit coupling, thereby modifies the Gilbert damping. In the presence of a pure spin current, we predict a new contribution due to the interplay of the anisotropic spin-orbit coupling and a pure spin current.

cond-mat.mtrl-sci

Infinite spin diffusion length of any spin polarization along direction perpendicular to effective magnetic field from Dresselhaus and Rashba spin-orbit couplings with identical strengths in (001) GaAs quantum wells

In this note, we show that the latest spin grating measurement of spin helix by Koralek {\em et al.} [Nature {\bf 458}, 610 (2009)] provides strong evidence of the infinite spin diffusion length of any spin polarization along the direction perpendicular to the effective magnetic field from the Dresselhaus and Rashba spin-orbit couplings with identical strengths in $(001)$ GaAs quantum wells, predicted by Cheng {\em et al.} [Phys. Rev. B {\bf 75}, 205328 (2007)].

cond-mat.mtrl-sci

A scheme for spin transistor with extremely large on/off current ratio

Quantum wires with periodic local Rashba spin-orbit couplings are proposed for a higher performance of spin field-effect transistor. Fano-Rashba quantum interference due to the spin-dependent modulated structure gives rise to a broad energy range of vanishingly small transmission. Tuning Rashba spin-orbit couplings can provide the on- or off-currents with extremely large on/off current ratios even in the presence of a strong disorder.

cond-mat.mes-hall

$L$-valley electron $g$ factor in bulk GaAs and AlAs

We study the Landé $g$-factor of conduction electrons in the $L$-valley of bulk GaAs and AlAs by using a three-band $\mathbf{k}\cdot\mathbf{p}$ model together with the tight-binding model. We find that the $L$-valley $g$-factor is highly anisotropic, and can be characterized by two components, $g_{\perp}$ and $g_{\|}$. $g_{\perp}$ is close to the free electron Landé factor but $g_{\|}$ is strongly affected by the remote bands. The contribution from remote bands on $g_{\|}$ depends on how the remote bands are treated. However, when the magnetic field is in the Voigt configuration, which is widely used in the experiments, different models give almost identical $g$-factor.

cond-mat.mtrl-sci

Robust strongly-modulated transmission of a $T$-shaped structure with local Rashba interaction

We propose a scheme of spin transistor using a $T$-shaped structure with local Rashba interaction. A wide antiresonance energy gap appears due to the interplay of two types of interference, the Fano-Rashba interference and the structure interference. A large current from the gap area can be obtained via changing the Rashba strength and/or the length of the sidearm by using gate voltage. The robustness of the antiresonance gap against strong disorder is demonstrated and shows the feasibility of this structure for the real application.

cond-mat.mes-hall

Triplet-singlet relaxation in semiconductor single and double quantum dots

We study the triplet-singlet relaxation in two-electron semiconductor quantum dots. Both single dots and vertically coupled double dots are discussed. In our work, the electron-electron Coulomb interaction, which plays an important role in the electronic structure, is included. The spin mixing is caused by spin-orbit coupling which is the key to the triplet-singlet relaxation. We show that the selection rule widely used in the literature is incorrect unless near the crossing/anticrossing point in single quantum dots. The triplet/singlet relaxation in double quantum dots can be markedly changed by varying barrier height, inter-dot distance, external magnetic field and dot size.

cond-mat.mtrl-sci