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arXiv · 0806.1252

$L$-valley electron $g$ factor in bulk GaAs and AlAs

K. Shen·M. Q. Weng·M. W. Wu
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Abstract

We study the Landé $g$-factor of conduction electrons in the $L$-valley of bulk GaAs and AlAs by using a three-band $\mathbf{k}\cdot\mathbf{p}$ model together with the tight-binding model. We find that the $L$-valley $g$-factor is highly anisotropic, and can be characterized by two components, $g_{\perp}$ and $g_{\|}$. $g_{\perp}$ is close to the free electron Landé factor but $g_{\|}$ is strongly affected by the remote bands. The contribution from remote bands on $g_{\|}$ depends on how the remote bands are treated. However, when the magnetic field is in the Voigt configuration, which is widely used in the experiments, different models give almost identical $g$-factor.

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K. Shen, M. Q. Weng, M. W. Wu. 2008-08-19. $L$-valley electron $g$ factor in bulk GaAs and AlAs. https://doi.org/10.1063/1.2986151

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