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K. W. West

Publications and source records attributed to K. W. West.

At least 307 records · Page 17Linked to original sources

Confinement of fractional quantum Hall states in narrow conducting channels

Confinement of small-gapped fractional quantum Hall states facilitates quasiparticle manipulation and is an important step towards quasiparticle interference measurements. Demonstrated here is conduction through top gate defined, narrow channels in high density, ultra-high mobility heterostructures. Transport evidence for the persistence of a correlated state at filling fraction 5/3 is shown in channels of 2micron length but gated to near 0.3micron in width. The methods employed to achieve this confinement hold promise for interference devices proposed for studying potential non-Abelian statistics at filling fraction 5/2.

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Magnetoresistance Oscillations in Two-dimensional Electron Systems Induced by AC and DC Fields

We report on magnetotransport measurements in a high-mobility two-dimentional electron system subject simultaneously to AC (microwave) and DC (Hall) fields. We find that DC excitation affects microwave photoresistance in a nontrivial way. Photoresistance maxima (minima) evolve into minima (maxima) and back, reflecting strong coupling and interplay of AC- and DC-induced effects. Most of our observations can be explained in terms of indirect electron transitions using a new, ``combined'' resonant condition. Observed quenching of microwave-induced zero resistance by a DC field cannot be unambiguously linked to a domain model, at least until a systematic theory treating both excitation types within a single framework is developed.

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Magnetotransport in a two-dimensional electron system in dc electric fields

We report on nonequilibrium transport measurements in a high-mobility two-dimensional electron system subject to weak magnetic field and dc excitation. Detailed study of dc-induced magneto-oscillations, first observed by Yang {\em et al}., reveals a resonant condition that is qualitatively different from that reported earlier. In addition, we observe dramatic reduction of resistance induced by a weak dc field in the regime of separated Landau levels. These results demonstrate similarity of transport phenomena in dc-driven and microwave-driven systems and have important implications for ongoing experimental search for predicted quenching of microwave-induced zero-resistance states by a dc current.

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Interaction effects in the transport of two-dimensional holes in GaAs

The power-law increase of the conductivity with temperature in the nominally insulating regime, recently reported for the dilute two-dimensional holes [cond-mat/0603053], is found to systematically vary with the carrier density. Based on the results from four different GaAs heterojunction-insulated-gate field-effect-transistor samples, it is shown that the power law exponent depends on a single dimensionless parameter, the ratio between the mean carrier separation and the distance to the metallic gate that screens the Coulomb interaction. This dependence suggests that the carriers form a correlated state in which the interaction effects play a significant role in the transport properties.

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Non-activated transport of strongly interacting two-dimensional holes in GaAs

We report on the transport measurements of two-dimensional holes in GaAs field effect transistors with record low densities down to 7*10^8 cm^{-2}. Remarkably, such a dilute system (with Fermi wavelength approaching 1 micrometer) exhibits a non-activated conductivity that grows with temperature following a power law. We contrast it with the activated transport obtained from measuring more disordered samples, and discuss possible transport mechanisms in this strongly-interacting regime.

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Absorption in the fractional quantum Hall regime: trion dichroism and spin polarization

We present measurements of optical interband absorption in the fractional quantum Hall regime in a GaAs quantum well in the range 0 < nu < 1. We investigate the mechanism of singlet trion absorption, and show that its circular dichroism can be used as a probe of the spin polarization of the ground state of the two-dimensional electron system (2DES). We find that at nu = 1/3 the 2DES is fully spin-polarized. Increasing the filling factor results in a gradual depolarization, with a sharp minimum in the dichroism near nu = 2/3. We find that in the range 0.5 < nu < 0.85 the 2DES remains partially polarized for the broad range of magnetic fields from 2.75 to 11 Tesla. This is consistent with the presence of a mixture of polarized and depolarized regions.

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Microwave induced magnetoresistance oscillations at the subharmonics of the cyclotron resonance

The magnetoresistance oscillations, which occur in a two-dimensional electron system exposed to strong microwave radiation when the microwave frequency $ω$ coincides with the n-th subharmonic of the cyclotron frequency $ω_c$ have been investigated for n = 2, 3 and 4. It is shown that these subharmonic features can be explained within a non-equilibrium energy distribution function picture without invoking multi-photon absorption processes. The existence of a frequency threshold above which such oscillations disappear lends further support to this explanation.

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Microwave photoresistance of a high-mobility two-dimensional electron gas in a triangular antidot lattice

The microwave (MW) photoresistance has been measured on a high-mobility two-dimensional electron gas patterned with a shallow triangular antidot lattice, where both the MW-induced resistance oscillations (MIRO) and magnetoplasmon (MP) resonance are observed superposing on sharp commensurate geometrical resonance (GR). Analysis shows that the MIRO, MP, and GR are decoupled from each other in these experiments.

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Melting of a 2D Quantum Electron Solid in High Magnetic Field

The melting temperature ($T_m$) of a solid is generally determined by the pressure applied to it, or indirectly by its density ($n$) through the equation of state. This remains true even for helium solids\cite{wilk:67}, where quantum effects often lead to unusual properties\cite{ekim:04}. In this letter we present experimental evidence to show that for a two dimensional (2D) solid formed by electrons in a semiconductor sample under a strong perpendicular magnetic field\cite{shay:97} ($B$), the $T_m$ is not controlled by $n$, but effectively by the \textit{quantum correlation} between the electrons through the Landau level filling factor $ν$=$nh/eB$. Such melting behavior, different from that of all other known solids (including a classical 2D electron solid at zero magnetic field\cite{grim:79}), attests to the quantum nature of the magnetic field induced electron solid. Moreover, we found the $T_m$ to increase with the strength of the sample-dependent disorder that pins the electron solid.

cond-mat.str-el↗

Spin polarization induced tenfold magneto-resistivity of highly metallic 2D holes in a narrow GaAs quantum well

We observe that an in-plane magnetic field ($B_{||}$) can induce an order of magnitude enhancement in the low temperature ($T$) resistivity ($ρ$) of metallic 2D holes in a narrow (10nm) GaAs quantum well. Moreover, we show the first observation of saturating behavior of $ρ(B_{||})$ at high $B_{||}$ in GaAs system, which suggests our large positive $ρ(B_{||})$ is due to the spin polarization effect alone. We find that this tenfold increase in $ρ(B_{||})$ even persists deeply into the 2D metallic state with the high $B_{||}$ saturating values of $ρ$ lower than 0.1$\times$h/e$^2$. The dramatic effect of $B_{||}$ we observe on the highly conductive 2D holes (with $B$=0 conductivity as high as 75e$^2$/h) sets strong constraint on models for the spin dependent transport in dilute metallic 2D systems.

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Transition from Free to Interacting Composite Fermions away from $ν$=1/3

Spin excitations from a partially populated composite fermion level are studied above and below $ν=1/3$. In the range $2/7<ν<2/5$ the experiments uncover significant departures from the non-interacting composite fermion picture that demonstrate the increasing impact of interactions as quasiparticle Landau levels are filled. The observed onset of a transition from free to interacting composite fermions could be linked to condensation into the higher order states suggested by transport experiments and numerical evaluations performed in the same filling factor range.

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Resonant Rayleigh scattering from quantum phases of cold electrons in semiconductor heterostructures

Resonant Rayleigh scattering of light from electrons confined in gallium arsenide double quantum wells displays significant changes at temperatures that are below one degree Kelvin. The Rayleigh resonance occurs for photon energies that overlap a quantum well exciton and when electron bilayers condense into a quantum-Hall state. Marked changes in Rayleigh scattering intensities that occur in response to application of an in-plane magnetic field indicate that the unexpected temperature dependence is linked to formation of non-uniform electron fluids in a disordered quantum-Hall phase. These results demonstrate a new realm of study in which resonant Rayleigh scattering methods probe quantum phases of cold electrons in semiconductor heterostructures.

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A system for measuring auto- and cross-correlation of current noise at low temperatures

We describe the construction and operation of a two-channel noise detection system for measuring power and cross spectral densities of current fluctuations near 2 MHz in electronic devices at low temperatures. The system employs cryogenic amplification and fast-Fourier-transform based spectral measurement. The gain and electron temperature are calibrated using Johnson noise thermometry. Full shot noise of 100 pA can be resolved with an integration time of 10 s. We report a demonstration measurement of bias-dependent current noise in a gate defined GaAs/AlGaAs quantum point contact.

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Shot-Noise Signatures of 0.7 Structure and Spin in a Quantum Point Contact

We report simultaneous measurement of shot noise and dc transport in a quantum point contact as a function of source-drain bias, gate voltage, and in-plane magnetic field. Shot noise at zero field exhibits an asymmetry related to the 0.7 structure in conductance. The asymmetry in noise evolves smoothly into the symmetric signature of spin-resolved electron transmission at high field. Comparison to a phenomenological model with density-dependent level splitting yields good quantitative agreement.

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Disorder mediated splitting of the cyclotron resonance in two-dimensional electron systems

We perform a direct study of the magnitude of the anomalous splitting in the cyclotron resonance (CR) of a two-dimensional electron system (2DES) as a function of sample disorder. In a series of AlGaAs/GaAs quantum wells, identical except for a range of carbon doping in the well, we find the CR splitting to vanish at high sample mobilities but to increase dramatically with increasing impurity density and electron scattering rates. This observation lends strong support to the conjecture that the non-zero wavevector, roton-like minimum in the dispersion of 2D magnetoplasmons comes into resonance with the CR, with the two modes being coupled via disorder.

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Bichromatic Microwave Photoresistance of Two-Dimensional Electron System

We explore experimentally bichromatic (frequencies $ω_1$ and $ω_2$) photoresistance of a two-dimensional electron system in the regimes of microwave-induced resistance oscillations and zero-resistance states. We find bichromatic resistance to be well described by a superposition of $ω_1$ and $ω_2$ components, provided that both monochromatic resistances are positive. This relation holds even when the oscillation amplitudes are small and one could expect additive contributions from monochromatic photoresistances. In contrast, whenever a zero-resistance state is formed by one of the frequencies, such superposition relation breaks down and the bichromatic resistance is strongly suppressed.

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Spontaneous spin polarization in quantum point contacts

We use spatial spin separation by a magnetic focusing technique to probe the polarization of quantum point contacts. The point contacts are fabricated from p-type GaAs/AlGaAs heterostructures. A finite polarization is measured in the low-density regime, when the conductance of a point contact is tuned to <2e^2/h. Polarization is stronger in samples with a well defined ``0.7 structure''

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Spin excitations in the Fractional Quantum Hall regime at $ν\lesssim1/3$

We report inelastic light scattering experiments in the fractional quantum Hall regime at filling factors $ν\lesssim1/3$. A spin mode is observed below the Zeeman energy. The filling factor dependence of the mode energy is consistent with its assignment to spin flip excitations of composite fermions with four attached flux quanta ($ϕ$=4). Our findings reveal a composite fermion Landau level structure in the $ϕ$=4 sequence.

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