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K. W. West

Publications and source records attributed to K. W. West.

At least 397 records · Page 22Linked to original sources

Experimental Demonstration of Fermi Surface Effects at Filling Factor 5/2

Using small wavelength surface acoustic waves (SAW) on ultra-high mobility heterostructures, Fermi surface properties are detected at 5/2 filling factor at temperatures higher than those at which the quantum Hall state forms. An enhanced conductivity is observed at 5/2 by employing sub 0.5 micron wavelength SAW, indicating a quasiparticle mean-free-path substantially smaller than that in the lowest Landau level. These findings are consistent with the presence of a filled Fermi sea of composite fermions, which may pair at lower temperatures to form the 5/2 ground state.

cond-mat.mes-hall↗

An All-Cryogenic THz Transmission Spectrometer

This paper describes a THz transmission spectrometer for the spectral range of 2-65 cm^-1 (100 GHz to 2 THz) with a spectral resolution of at least 1.8 cm^-1 (50 GHz) where the source, sample, and detector are all fully contained in a cryogenic environment. Cyclotron emission from a two-dimensional electron gas heated with an electrical current serves as a magnetic field tunable source. The spectrometer is demonstrated at 4.2 K by measuring the resonant cyclotron absorption of a second two dimensional electron gas. Unique aspects of the spectrometer are that 1) an ultra-broadband detector is used and 2) the emitter is run quasi-continuously with a chopping frequency of only 1 Hz. Since optical coupling to room temperature components is not necessary, this technique is compatible with ultra-low temperature (sub 100 mK) operation.

physics.ins-det↗

Effect of Nyquist Noise on the Nyquist Dephasing Rate in 2d Electron Systems

We measure the effect of externally applied broadband Nyquist noise on the intrinsic Nyquist dephasing rate of electrons in a two-dimensional electron gas at low temperatures. Within the measurement error, the phase coherence time is unaffected by the externally applied Nyquist noise, including applied noise temperatures of up to 300 K. The amplitude of the applied Nyquist noise from 100 MHz to 10 GHz is quantitatively determined in the same experiment using a microwave network analyzer.

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An Investigation of Orientational Symmetry-Breaking Mechanisms in High Landau Levels

The principal axes of the recently discovered anisotropic phases of 2D electron systems at high Landau level occupancy are consistently oriented relative to the crystal axes of the host semiconductor. The nature of the native rotational symmetry breaking field responsible for this preferential orientation remains unknown. Here we report on experiments designed to investigate the origin and magnitude of this symmetry breaking field. Our results suggest that neither micron-scale surface roughness features nor the precise symmetry of the quantum well potential confining the 2D system are important factors. By combining tilted field transport measurements with detailed self-consistent calculations we estimate that the native anisotropy energy, whatever its origin, is typically ~ 1 mK per electron.

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Observation of a Linearly Dispersing Collective Mode in a Quantum Hall Ferromagnet

Double layer two-dimensional electron systems can exhibit a fascinating collective phase believed to exhibit both quantum ferromagnetism and excitonic superfluidity. This unusual phase has recently been found to exhibit tunneling phenomena reminiscent of the Josephson effect. A key element of the theoretical understanding of this bizarre quantum fluid is the existence of linearly dispersing Goldstone collective modes. Using the method of tunneling spectroscopy, we have demonstrated the existence of these modes. We find the measured velocity to be in reasonable agreement with theoretical estimates.

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Fermi liquid to Luttinger liquid transition at the edge of a two-dimensional electron gas

We present experimental results on the tunneling into the edge of a two dimensional electron gas (2DEG) obtained with a GaAs/AlGaAs cleaved edge overgrown structure in a strong perpendicular magnetic field. While the 2DEG exhibits typical fractional quantum Hall features of a very high mobility sample, we observe the onset of a non-linear current-voltage characteristic in the vicinity of nu=1. For filling factor nu<1 the system is consistent with a non-Fermi liquid behavior, such as a Luttinger liquid, whereas for nu>1 we observe an Ohmic tunneling resistance between the edge and a three dimensional contact, typical for a Fermi liquid. Hence, at the edge, there is a transition from a Luttinger liquid to a Fermi liquid. Finally, we show that the Luttinger liquid exponent at a given filling factor is not universal but depends on sample parameters.

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Experimental Evidence for a Spin-Polarized Ground State in the ν=5/2 Fractional Quantum Hall Effect

We study the ν=5/2 even-denominator fractional quantum Hall effect (FQHE) over a wide range of magnetic (B) field in a heterojunction insulated gate field-effect transistor (HIGFET). The electron density can be tuned from n=0 to 7.6 \times 10^{11} cm^{-2} with a peak mobility μ= 5.5 \times 10^6 cm^2/Vs. The ν=5/2 state shows a strong minimum in diagonal resistance and a developing Hall plateau at magnetic fields as high as 12.6T. The strength of the energy gap varies smoothly with B-field. We interpret these observations as strong evidence for a spin-polarized ground state at ν=5/2.

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Highly Anisotropic Transport in the Integer Quantum Hall Effect

At very large tilt of the magnetic (B) field with respect to the plane of a two-dimensional electron system the transport in the integer quantum Hall regime at $ν$ = 4, 6, and 8 becomes strongly anisotropic. At these filling factors the usual {\em deep minima} in the magneto-resistance occur for the current flowing {\em perpendicular} to the in-plane B field direction but develop into {\em strong maxima} for the current flowing {\em parallel} to the in-plane B field. The origin of this anisotropy is unknown but resembles the recently observed anisotropy at half-filled Landau levels.

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Suppression of weak localization effects in low-density metallic 2D holes

We have measured the conductivity in a gated high-mobility GaAs two dimensional hole sample with densities in the range (7-17)x10^9 cm^-2 and at hole temperatures down to 5x10^-3 E_F. We measure the weak localization corrections to the conductivity g=G/(e^2/h) as a function of magnetic field (Delta g=0.019 +/- 0.006 at g=1.5 and T=9 mK) and temperature (d ln g/dT<0.0058 and 0.0084 at g=1.56 and 2.8). These values are less than a few percent of the value 1/pi predicted by standard weak localization theory for a disordered 2D Fermi liquid

cond-mat.str-el↗

Anisotropic Disorder in High Mobility 2D Heterostructures and its Correlation to Electron Transport

Surface morphology of high mobility heterostructures is examined and correlated with d.c. transport. {\it All} samples examined show evidence of lines in the [1$\bar{1}$0] direction with roughness ranging from small amplitude features to severe anisotropic ridges. Transport in these samples is consistent with that in samples having artificially induced 1D charge modulations. The native surface properties reflect a prevalent, anisotropic disorder affecting 2D electron conduction. Importantly, the native lines are orthogonal to the stripes theoretically proposed to explain high Landau level transport anisotropies.

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Geometry dependent dephasing in small metallic wires

Temperature dependent weak localization is measured in metallic nanowires in a previously unexplored size regime down to width $w=5$ nm. The dephasing time, $τ_ϕ$, shows a low temperature $T$ dependence close to quasi-1D theoretical expectations ($τ_ϕ \sim T^{-2/3}$) in the narrowest wires, but exhibits a relative saturation as $T \to 0$ for wide samples of the same material, as observed previously. As only sample geometry is varied to exhibit both suppression and divergence of $τ_ϕ$, this finding provides a new constraint on models of dephasing phenomena.

cond-mat.mes-hall↗

Reorientation of Anisotropy in a Square Well Quantum Hall Sample

We have measured magnetotransport at half-filled high Landau levels in a quantum well with two occupied electric subbands. We find resistivities that are {\em isotropic} in perpendicular magnetic field but become strongly {\em anisotropic} at $ν$ = 9/2 and 11/2 on tilting the field. The anisotropy appears at an in-plane field, $B_{ip} \sim$ 2.5T, with the easy-current direction {\em parallel} to $B_{ip}$ but rotates by 90$^{\circ}$ at $B_{ip} \sim$ 10T and points now in the same direction as in single-subband samples. This complex behavior is in quantitative agreement with theoretical calculations based on a unidirectional charge density wave state model.

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New collective states of 2D electrons in high Landau levels

A brief summary of the emerging evidence for a new class of collective states of two-dimensional electrons in partially occupied excited Landau levels is presented. Among the most dramatic phenomena described are the large anisotropies of the resistivity observed at very low temperatures near half-filling of the third and higher Landau levels and the non-linear character of the re-entrant integer quantized Hall states in the flanks of the same levels. The degree to which these findings support recent theoretical predictions of charge density wave ground states is discussed and a preliminary comparison to recent transport theories is made.

cond-mat.mes-hall↗

Evidence for a Goldstone Mode in a Double Layer Quantum Hall System

The tunneling conductance between two parallel 2D electron systems has been measured in a regime of strong interlayer Coulomb correlations. At total Landau level filling $ν_T=1$ the tunnel spectrum changes qualitatively when the boundary separating the compressible phase from the ferromagnetic quantized Hall state is crossed. A huge resonant enhancement replaces the strongly suppressed equilibrium tunneling characteristic of weakly coupled layers. The possible relationship of this enhancement to the Goldstone mode of the broken symmetry ground state is discussed.

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Localization in Artificial Disorder - Two Coupled Quantum Dots

Using Single Electron Capacitance Spectroscopy, we study electron additions in quantum dots containing two potential minima separated by a shallow barrier. Analysis of addition spectra in magnetic field allows us to distinguish whether electrons are localized in either potential minimum or delocalized over the entire dot. We demonstrate that high magnetic field abruptly splits up a low-density droplet into two smaller fragments, each residing in a potential minimum. An unexplained cancellation of electron repulsion between electrons in these fragments gives rise to paired electron additions.

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Many-body spin related phenomena in ultra-low-disorder quantum wires

Zero length quantum wires (or point contacts) exhibit unexplained conductance structure close to 0.7 X 2e^2/h in the absence of an applied magnetic field. We have studied the density- and temperature-dependent conductance of ultra-low-disorder GaAs/AlGaAs quantum wires with nominal lengths l=0 and 2 mu m, fabricated from structures free of the disorder associated with modulation doping. In a direct comparison we observe structure near 0.7 X 2e^2/h for l=0 whereas the l=2 mu m wires show structure evolving with increasing electron density to 0.5 X 2e^2/h in zero magnetic field, the value expected for an ideal spin-split sub-band. Our results suggest the dominant mechanism through which electrons interact can be strongly affected by the length of the 1D region.

cond-mat.str-el↗

The Localization-Delocalization Transition in Quantum Dots

Single-electron capacitance spectroscopy precisely measures the energies required to add individual electrons to a quantum dot. The spatial extent of electronic wavefunctions is probed by investigating the dependence of these energies on changes in the dot confining potential. For low electron densities, electrons occupy distinct spatial sites localized within the dot. At higher densities, the electrons become delocalized, and all wavefunctions are spread over the full dot area. Near the delocalization transition, the last remaining localized states exist at the perimeter of the dot. Unexpectedly, these electrons appear to bind with electrons in the dot center.

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Inelastic Light Scattering by Gap Excitations of Fractional Quantum Hall States at 1/3 <= ν<= 2/3

We report observations of collective gap excitations of the fractional quantum Hall (FQH) states at filling factors ν=p/(2p+1) (p=integer), for 1/3 <= ν<= 2/3, by inelastic light scattering. The collective gap energies at ν= 1/3, 2/5 and 3/7 show a drastic decrease as the value ν=1/2 is approached. These energies and the one at ν=3/5 display the linear scaling with (e^2/εl_o)/|2p+1| that is characteristic of composite fermions in Chern-Simons gauge fields. In a narrow range of νcentered at 1/2, where the FQH gaps collapse, we observe a new excitation mode which exists only at temperatures below 150 mK.

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