arXiv subjects

K. W. West

Publications and source records attributed to K. W. West.

At least 163 records · Page 9Linked to original sources

arXiv2014

Microwave spectroscopic studies of the bilayer electron solid states at low Landau filling in a wide quantum well

At the low Landau filling factor $(ν)$ termination of the fractional quantum Hall effect (FQHE) series, two-dimensional electron systems (2DESs) exhibit an insulating phase that is understood as a form of pinned Wigner solid. Here we use microwave spectroscopy to probe the transition to the insulator for a wide quantum well (WQW) sample that can support single-layer or bilayer states depending on its overall carrier density, $n$. We find the insulator exhibits a resonance, which is characteristic of a bilayer solid. The resonance also reveals a pair of transitions within the solid, which are not accessible to dc transport measurements. As $n$ is biased deeper into the bilayer solid regime, the resonance grows in specific intensity, and the transitions within the insulator disappear. These behaviors are suggestive of a picture of the insulating phase as an emulsion of liquid and solid components.

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arXiv2014

Determination of the Fermi Contour and Spin-polarization of $ν=3/2$ Composite Fermions via Ballistic Commensurability Measurements

We report ballistic transport commensurability minima in the magnetoresistance of $ν=3/2$ composite fermions (CFs). The CFs are formed in high-quality two-dimensional electron systems confined to wide GaAs quantum wells and subjected to an in-plane, unidirectional periodic potential modulation. We observe a slight asymmetry of the CF commensurability positions with respect to $ν=3/2$, which we explain quantitatively by comparing three CF density models and concluding that the $ν=3/2$ CFs are likely formed by the minority carriers in the upper energy spin state of the lowest Landau level. Our data also allow us to probe the shape and size of the CF Fermi contour. At a fixed electron density of $\simeq 1.8 \times 10^{11}$ cm$^{-2}$, as the quantum well width increases from 30 to 60 nm, the CFs show increasing spin-polarization. We attribute this to the enhancement of the Zeeman energy relative to the Coulomb energy in wider wells where the latter is softened because of the larger electron layer thickness. The application of an additional parallel magnetic field ($B_{||}$) leads to a significant distortion of the CF Fermi contour as $B_{||}$ couples to the CFs' out-of-plane orbital motion. The distortion is much more severe compared to the $ν=1/2$ CF case at comparable $B_{||}$. Moreover, the applied $B_{||}$ further spin-polarizes the $ν=3/2$ CFs as deduced from the positions of the commensurability minima.

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arXiv2014

Anomalous Gap Reversal of the $3+1/3$ and $3+1/5$ Fractional Quantum Hall States

In this work we report the opening of an energy gap at the filling factor $ν=3+1/3$, firmly establishing the ground state as a fractional quantum Hall state. This and other odd-denominator states unexpectedly break particle-hole symmetry. Specifically, we find that the relative magnitudes of the energy gaps of the $ν=3+1/3$ and $3+1/5$ states from the upper spin branch are reversed when compared to the $ν=2+1/3$ and $2+1/5$ counterpart states in the lower spin branch. Our findings raise the possibility that the former states have a non-conventional origin.

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arXiv2014

Nonlinear transport in 2D electron gas exhibiting colossal negative magnetoresistance

We report on nonlinear transport measurements in a GaAs/AlGaAs quantum well exhibiting a colossal negative magnetoresistance effect. Under applied dc bias, the magnetoresistance becomes nonmonotonic, exhibiting distinct extrema that move to higher magnetic fields with increasing current. In the range of magnetic fields corresponding to the resistivity minimum at zero bias, the resistivity increases linearly with current and the rate of this increase scales with the inverse magnetic field. The latter observation is consistent with the theory, proposed more than 35 years ago, considering classical memory effects in the presence of strong, dilute scatterers.

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arXiv2014

$ν=1/2$ Fractional Quantum Hall Effect in Tilted Magnetic Fields

Magnetotransport measurements on two-dimensional electrons confined to wide GaAs quantum wells reveal a remarkable evolution of the ground state at filling factor $ν=1/2$ as we tilt the sample in the magnetic field. Starting with a compressible state at zero tilt angle, a strong $ν=1/2$ fractional quantum Hall state appears at intermediate angles. At higher angles an insulating phase surrounds this state and eventually engulfs it at the highest angles. This evolution occurs because the parallel component of the field renders the charge distribution increasingly bilayer-like.

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arXiv2014

Fractional Quantum Hall Effect and Wigner Crystal of Two-Flux Composite Fermions

In two-dimensional electron systems confined to GaAs quantum wells, as a function of either tilting the sample in magnetic field or increasing density, we observe multiple transitions of the fractional quantum Hall states (FQHSs) near filling factors $ν=3/4$ and 5/4. The data reveal that these are spin-polarization transitions of interacting two-flux composite Fermions, which form their own FQHSs at these fillings. The fact that the reentrant integer quantum Hall effect near $ν=4/5$ always develops following the transition to full spin polarization of the $ν=4/5$ FQHS strongly links the reentrant phase to a pinned \emph{ferromagnetic} Wigner crystal of two-flux composite Fermions.

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arXiv2014

Spin-Polarization of Composite Fermions and Particle-Hole Symmetry Breaking

We study the critical spin-polarization energy ($α_{\rm C}$) above which fractional quantum Hall states in two-dimensional electron systems confined to symmetric GaAs quantum wells become fully spin-polarized. We find a significant decrease of $α_{\rm C}$ as we increase the well-width. In systems with comparable electron layer thickness, $α_{\rm C}$ for fractional states near Landau level filling $ν=3/2$ is about twice larger than those near $ν=1/2$, suggesting a broken particle-hole symmetry. Theoretical calculations, which incorporate Landau level mixing through an effective three-body interaction, and finite layer thickness, capture certain qualitative features of the experimental results.

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arXiv2014

What Determines the Fermi Wave Vector of Composite Fermions?

Composite fermions (CFs), exotic particles formed by pairing an even number of flux quanta to each electron, provide a fascinating description of phenomena exhibited by interacting two-dimensional electrons at high magnetic fields. At and near Landau level filling $ν=1/2$, CFs occupy a Fermi sea and exhibit commensurability effects when subjected to a periodic potential modulation. We observe a pronounced asymmetry in the magnetic field positions of the commensurability resistance minima of CFs with respect to the field at $ν=1/2$. This unexpected asymmetry is quantitatively consistent with the CFs' Fermi wave vector being determined by the \textit{minority} carriers in the lowest Landau level. Our data indicate a breaking of the particle-hole symmetry for CFs near $ν=1/2$.

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arXiv2014

Competing quantum Hall phases in the second Landau level in low density limit

We present in this Letter the results from two high quality, low density GaAs quantum wells. In sample A of electron density n=5.0x10^10 cm^-2, anisotropic electronic transport behavior was observed at ν=7/2 in the second Landau level. We believe that the anisotropy is due to the large Landau level mixing effect in this sample. In sample B of density 4.1x10^10 cm^-2, strong 8/3, 5/2, and 7/3 fractional quantum Hall states were observed. Furthermore, our energy gap data suggest that, similar to the 8/3 state, the 5/2 state may also be spin unpolarized in the low density limit. The results from both samples show that the strong electron-electron interactions and a large Landau level mixing effect play an import role in the competing ground states in the second landau level.

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arXiv2014

Colossal negative magnetoresistance in a 2D electron gas

We report on a colossal negative magnetoresistance (MR) in GaAs/AlGaAs quantum well which, at low temperatures, is manifested by a drop of the resistivity by more than an order of magnitude at a magnetic field $B \approx 1$ kG. In contrast to MR effects discussed earlier, the MR reported here is not parabolic, even at small $B$, and persists to much higher in-plane magnetic fields and temperatures. Remarkably, the temperature dependence of the resistivity at $B \approx 1$ kG is linear over the entire temperature range studied (from 1 to 30 K) and appears to coincide with the high-temperature limit of the zero-field resistivity, hinting on the important role of acoustic phonons.

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arXiv2014

Even-denominator Fractional Quantum Hall Effect at a Landau Level Crossing

The fractional quantum Hall effect (FQHE), observed in two-dimensional (2D) charged particles at high magnetic fields, is one of the most fascinating, macroscopic manifestations of a many-body state stabilized by the strong Coulomb interaction. It occurs when the filling factor ($ν$) of the quantized Landau levels (LLs) is a fraction which, with very few exceptions, has an odd denominator. In 2D systems with additional degrees of freedom it is possible to cause a crossing of the LLs at the Fermi level. At and near these crossings, the FQHE states are often weakened or destroyed. Here we report the observation of an unusual crossing of the two \emph{lowest-energy} LLs in high-mobility GaAs 2D $hole$ systems which brings to life a new \emph{even-denominator} FQHE at $ν=1/2$.

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arXiv2014

Fractional Quantum Hall Effect at $ν=1/2$ in Hole Systems Confined to GaAs Quantum Wells

We observe fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $ν=1/2$ in two-dimensional hole systems confined to GaAs quantum wells of width 30 to 50 nm and having bilayer-like charge distributions. The $ν=1/2$ FQHE is stable when the charge distribution is symmetric and only in a range of intermediate densities, qualitatively similar to what is seen in two-dimensional electron systems confined to approximately twice wider GaAs quantum wells. Despite the complexity of the hole Landau level structure, originating from the coexistence and mixing of the heavy- and light-hole states, we find the hole $ν=1/2$ FQHE to be consistent with a two-component, Halperin-Laughlin ($Ψ_{331}$) state.

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arXiv2014

Pinning modes of high magnetic field Wigner solids with controlled alloy disorder

For a series of samples with 2D electron systems in dilute Al_x Ga_{1-x}As, with varying x from 0 to 0.8 %, we survey the pinning mode resonances of Wigner solids at the low Landau filling termination of the fractional quantum Hall effect (FQHE) series. For all x studied, the pinning modes are present with frequencies, f_pk, that are consistent with collective weak pinning. For x>=0.22% we find f_pk vs B exhibits a rapid increase that is not present for x=0. We find the observed f_pk is much smaller than values calculated with a simple Wigner solid model which neglects the effects of the disorder on the charge distribution of a carrier.

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arXiv2014

Electron-hole pairing in graphene-GaAs heterostructures

Vertical heterostructures combining different layered materials offer novel opportunities for applications and fundamental studies of collective behavior driven by inter-layer Coulomb coupling. Here we report heterostructures comprising a single-layer (or bilayer) graphene carrying a fluid of massless (massive) chiral carriers, and a quantum well created in GaAs 31.5 nm below the surface, supporting a high-mobility two-dimensional electron gas. These are a new class of double-layer devices composed of spatially-separated electron and hole fluids. We find that the Coulomb drag resistivity significantly increases for temperatures below 5-10 K, following a logarithmic law. This anomalous behavior is a signature of the onset of strong inter-layer correlations, compatible with the formation of a condensate of permanent excitons. The ability to induce strongly-correlated electron-hole states paves the way for the realization of coherent circuits with minimal dissipation and nanodevices including analog-to-digital converters and topologically protected quantum bits.

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arXiv2013

Microwave spectroscopic observation of distinct electron solid phases in wide quantum wells

In high magnetic fields ($B$), two dimensional electron systems (2DESs) can form a number of phases in which interelectron repulsion plays the central role, since the kinetic energy is frozen out by Landau quantization. These phases include the well-known liquids of the fractional quantum Hall effect (FQHE), as well as solid phases with broken spatial symmetry and crystalline order. Solids can occur at the low Landau filling ($ν$) termination of the FQHE series, but also within integer quantum Hall effects (IQHEs). Here, we present microwave spectroscopy studies of wide quantum wells (WQWs). The spectra clearly reveal two distinct solid phases, hidden within what in dc transport would be the zero diagonal conductivity of an integer quantum Hall effect state. Explanation of these solids is not possible with the simple picture of a Wigner solid (WS) of ordinary (quasi) electrons or holes.

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arXiv2013

Selective control of edge-channel trajectories by scanning gate microscopy

Electronic Mach-Zehnder interferometers in the Quantum Hall (QH) regime are currently discussed for the realization of quantum information schemes. A recently proposed device architecture employs interference between two co-propagating edge channels. Here we demonstrate the precise control of individual edge-channel trajectories in quantum point contact devices in the QH regime. The biased tip of an atomic force microscope is used as a moveable local gate to pilot individual edge channels. Our results are discussed in light of the implementation of multi-edge interferometers.

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arXiv2013

Phase Diagrams for the $ν$ = 1/2 Fractional Quantum Hall Effect in Electron Systems Confined to Symmetric, Wide GaAs Quantum Wells

We report an experimental investigation of fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $ν$ = 1/2 in very high quality wide GaAs quantum wells, and at very high magnetic fields up to 45 T. The quasi-two-dimensional electron systems we study are confined to GaAs quantum wells with widths $W$ ranging from 41 to 96 nm and have variable densities in the range of $\simeq 4 \times 10^{11}$ to $\simeq 4 \times 10^{10}$ cm$^{-2}$. We present several experimental phase diagrams for the stability of the $ν=1/2$ FQHE in these quantum wells. In general, for a given $W$, the 1/2 FQHE is stable in a limited range of intermediate densities where it has a bilayer-like charge distribution; it makes a transition to a compressible phase at low densities and to an insulating phase at high densities. The densities at which the $ν=1/2$ FQHE is stable are larger for narrower quantum wells. Moreover, even a slight charge distribution asymmetry destabilizes the $ν=1/2$ FQHE and turns the electron system into a compressible state. We also present a plot of the symmetric-to-antisymmetric subband separation ($Δ_{SAS}$), which characterizes the inter-layer tunneling, vs density for various $W$. This plot reveals that $Δ_{SAS}$ at the boundary between the compressible and FQHE phases increases \textit{linearly} with density for all the samples. Finally, we summarize the experimental data in a diagram that takes into account the relative strengths of the inter-layer and intra-layer Coulomb interactions and $Δ_{SAS}$. We conclude that, consistent with the conclusions of some of the previous studies, the $ν=1/2$ FQHE observed in wide GaAs quantum wells with symmetric charge distribution is stabilized by a delicate balance between the inter-layer and intra-layer interactions, and is very likely described by a two-component ($Ψ_{311}$) state.

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arXiv2013

Tunneling at $ν_T=1$ in Quantum Hall Bilayers

Interlayer tunneling measurements in the strongly correlated bilayer quantized Hall phase at $ν_T=1$ are reported. The maximum, or critical current for tunneling at $ν_T=1$, is shown to be a well-defined global property of the coherent phase, insensitive to extrinsic circuit effects and the precise configuration used to measure it, but also exhibiting a surprising scaling behavior with temperature. Comparisons between the experimentally observed tunneling characteristics and a recent theory are favorable at high temperatures, but not at low temperatures where the tunneling closely resembles the dc Josephson effect. The zero-bias tunneling resistance becomes extremely small at low temperatures, vastly less than that observed at zero magnetic field, but nonetheless remains finite. The temperature dependence of this tunneling resistance is similar to that of the ordinary in-plane resistivity of the quantum Hall phase.

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