arXiv subjects

K. Watanabe

Publications and source records attributed to K. Watanabe.

At least 181 records · Page 10Linked to original sources

arXiv2021

Quantized conductance with non-zero shot noise as a signature of Andreev edge state

Electrical conductance measurements have limited scope in identifying Andreev edge states (AESs), which form the basis for realizing various topological excitations in quantum Hall (QH) - superconductor (SC) junctions. To unambiguously detect AESs, we measure shot noise along with electrical conductance in a graphene based QH-SC junction at integer filling nu=2. Remarkably, we find that the Fano factor of shot noise approaches half when the bias energy is less than the superconducting gap, whereas it is close to zero above the superconducting gap. This is striking, given that, at the same time, the electrical conductance remains quantized at 2e^2/h within and above the superconducting gap. A quantized conductance is expected to produce zero shot noise due to its dissipationless flow. However, at a QH-SC interface, AESs carry the current in the zero-bias limit and an equal mixing of electron and hole like states produces half of the Poissonian shot noise with quantized conductance. The observed results are in accord with our detailed theoretical calculations of electrical conductance and shot noise based on non-equilibrium Green's function method in the presence of disorder. Our results pave the way in using shot noise as a detection tool in the search of exotic topological excitations in QH-SC hybrids.

cond-mat.mes-hall↗

arXiv2021

The optical response of artificially twisted MoS$_2$ bilayers

Two-dimensional layered materials offer the possibility to create artificial vertically stacked structures possessing an additional degree of freedom - $the$ $interlayer$ $twist$. We present a comprehensive optical study of artificially stacked bilayers (BLs) MoS$_2$ encapsulated in hexagonal BN with interlayer twist angle ranging from 0 to 60 degrees using Raman scattering and photoluminescence spectroscopies. It is found that the strength of the interlayer coupling in the studied BLs can be estimated using the energy dependence of indirect emission versus the A$_\textrm{1g}$-E$_\textrm{2g}^1$ energy separation. Due to the hybridization of electronic states in the valence band, the emission line related to the interlayer exciton is apparent in both the natural (2H) and artificial (62$^\circ$) MoS$_2$ BLs, while it is absent in the structures with other twist angles. The interlayer coupling energy is estimated to be of about 50 meV. The effect of temperature on energies and intensities of the direct and indirect emission lines in MoS$_2$ bilayers is also quantified.

cond-mat.mes-hall↗

arXiv2021

Intrinsic circularly-polarized exciton emission in a twisted van-der-Waals heterostructure

The investigation of excitons in van-der-Waals heterostructures has led to profound insights into the interplay of crystal symmetries and fundamental effects of light-matter coupling. In particular, the polarization selection rules in undistorted, slightly twisted heterostructures of MoSe$_2$/WSe$_2$ were found to be connected with the Moiré superlattice. Here, we report the emergence of a significant degree of circular polarization of excitons in such a hetero-structure upon non-resonant driving with a linearly polarized laser. The effect is present at zero magnetic field, and sensibly reacts on perpendicularly applied magnetic field. The giant magnitude of polarization, which cannot be explained by conventional birefringence or optical activity of the twisted lattice, suggests a kinematic origin arising from an emergent pyromagnetic symmetry in our structure, which we exploit to gain insight into the microscopic processes of our device.

cond-mat.mes-hall↗

arXiv2021

Electron transport in dual-gated three-layer MoS$_2$

The low-energy band structure of few-layer MoS$_2$ is relevant for a large variety of experiments ranging from optics to electronic transport. Its characterization remains challenging due to complex multi band behavior. We investigate the conduction band of dual-gated three-layer MoS$_2$ by means of magnetotransport experiments. The total carrier density is tuned by voltages applied between MoS$_2$ and both top and bottom gate electrodes. For asymmetrically biased top and bottom gates, electrons accumulate in the layer closest to the positively biased electrode. In this way, the three-layer MoS$_2$ can be tuned to behave electronically like a monolayer. In contrast, applying a positive voltage on both gates leads to the occupation of all three layers. Our analysis of the Shubnikov--de Haas oscillations originating from different bands lets us attribute the corresponding carrier densities in the top and bottom layers. We find a twofold Landau level degeneracy for each band, suggesting that the minima of the conduction band lie at the $\pm K$ points of the first Brillouin zone. This is in contrast to band structure calculations for zero layer asymmetry, which report minima at the $Q$ points. Even though the interlayer tunnel coupling seems to leave the low-energy conduction band unaffected, we observe scattering of electrons between the outermost layers for zero layer asymmetry. The middle layer remains decoupled due to the spin-valley symmetry, which is inverted for neighboring layers. When the bands of the outermost layers are energetically in resonance, interlayer scattering takes place, leading to an enhanced resistance and to magneto-interband oscillations.

cond-mat.mes-hall↗

arXiv2021

Direct observation of the layer-number-dependent electronic structure in few-layer WTe2

When a crystal becomes thinner and thinner to the atomic level, peculiar phenomena discretely depending on its layer-numbers (n) start to appear. The symmetry and wave functions strongly reflect the layer-numbers and stacking order, which brings us a potential of realizing new properties and functions that are unexpected in either bulk or simple monolayer. Multilayer WTe2 is one such example exhibiting unique ferroelectricity and non-linear transport properties related to the antiphase stacking and Berry-curvature dipole. Here we investigate the electronic band dispersions of multilayer WTe2 (2-5 layers), by performing laser-based micro-focused angle-resolved photoelectron spectroscopy on exfoliated-flakes that are strictly sorted by n and encapsulated by graphene. We clearly observed the insulator-semimetal transition occurring between 2- and 3-layers, as well as the 30-70 meV spin-splitting of valence bands manifesting in even n as a signature of stronger structural asymmetry. Our result fully demonstrates the possibility of the large energy-scale band and spin manipulation through the finite n stacking procedure.

cond-mat.mtrl-sci↗

arXiv2021

Vanishing thermal equilibration for hole-conjugate fractional quantum Hall states in graphene

Transport through edge-channels is responsible for conduction in quantum Hall (QH) phases. Topology dictates quantization of both charge and thermal transport coefficients. These turn out to approach robust quantized values when incoherent equilibration processes become dominant. Here, we report on measurements of both electrical and thermal conductances of integer and fractional quantum Hall (FQH) phases, realized in hBN encapsulated graphite gated bilayer graphene devices. Remarkably, for the complex edge at filling factors $ν=5/3$ and $ν=8/3$, which correspond to the paradigmatic hole-conjugate FQH phase $ν=2/3$ of the partially filled Landau level, we find vanishing thermal equilibration. This is striking, given that, at the same time, our results for the electrical conductance indicate efficient charge equilibration. These results are in accord with our theoretical analysis, pointing to a divergent thermal equilibration length in the limit of strong electrostatic interaction. Our results elucidate the subtle nature of the crossover from mesoscopic to robust topology-dominated transport in electronic two-dimensional topological phases.

cond-mat.mes-hall↗

arXiv2021

Superconducting contacts to a monolayer semiconductor

We demonstrate superconducting vertical interconnect access (VIA) contacts to a monolayer of molybdenum disulfide (MoS$_2$), a layered semiconductor with highly relevant electronic and optical properties. As a contact material we use MoRe, a superconductor with a high critical magnetic field and high critical temperature. The electron transport is mostly dominated by a single superconductor/normal conductor junction with a clear superconductor gap. In addition, we find MoS$_2$ regions that are strongly coupled to the superconductor, resulting in resonant Andreev tunneling and junction dependent gap characteristics, suggesting a superconducting proximity effect. Magnetoresistance measurements show that the bandstructure and the high intrinsic carrier mobility remain intact in the bulk of the MoS$_2$. This type of VIA contact is applicable to a large variety of layered materials and superconducting contacts, opening up a path to monolayer semiconductors as a platform for superconducting hybrid devices.

cond-mat.mes-hall↗

arXiv2021

Unveiling excitonic properties of magnons in a quantum Hall ferromagnet

Magnons enable transferring a magnetic moment or spin over macroscopic distance. In quantum Hall ferromagnet, it has been predicted in the early 90s that spin and charges are entangled, meaning that any change of the spin texture modifies the charge distribution. As a direct consequence of this entanglement, magnons carry an electric dipole moment. Here we report the first evidence of the existence of this electric dipole moment in a graphene quantum Hall ferromagnet using a Mach-Zehnder interferometer as a quantum sensor. By propagating towards the interferometer through an insulating bulk, the magnon electric dipole moment modifies the Aharonov-Bohm flux through the interferometer, changing both its phase and its visibility. In particular, we relate the phase shift to the sign of this electric dipole moment, and the exponential loss of visibility to the flux of emitted magnons. Finally, we probe the emission energy threshold of the magnons close to filling factor v=1. Approaching v=0, we observe that the emission energy threshold diminishes towards zero, which might be linked to the existence of gapless mode in the canted-antiferromagnetic (CAF) phase at v=0. The detection and manipulation of magnons based on their electric dipole open the field for a new type of coherent magnon quantum circuits that will be electrostatically controlled.

cond-mat.mes-hall↗

arXiv2021

Tuning supercurrent in Josephson field effect transistors using h-BN dielectric

The transparent interface in epitaxial Al-InAs heterostructures provides an excellent platform for potential advances in mesoscopic and topological superconductivity. Semiconductor-based Josephson Junction Field Effect Transistors (JJ-FETs) fabricated on these heterostructures have a metallic gate that tunes the supercurrent. Here we report the fabrication and measurement of gate-tunable Al-InAs JJ-FETs in which the gate dielectric in contact with the InAs is produced by mechanically exfoliated hexagonal boron nitride (h-BN) followed by dry transfer using a van der Waals-mediated pick up process. We discuss the fabrication process that enables compatibility between layered material transfer and Al-InAs heterostructures to avoid chemical reactions and unintentional doping that could affect the characteristics of the JJ-FET. We achieve full gate-tunablity of supercurrent by using only 5~nm thick h-BN flakes. We contrast our process with devices fabricated using a conventional AlO$_{\rm x}$ gate dielectric and show that h-BN could be an excellent competing dielectric for JJ-FET devices. We observe that the product of normal resistance and critical current, I$_{\rm c}$R$_{\rm n}$, is comparable for both types of devices, but strikingly higher R$_{\rm n}$ for the h-BN-based devices indicating that the surface is doped less compared to AlO$_{\rm x}$ gate dielectric.

cond-mat.mes-hall↗

arXiv2021

Observation of Coulomb-assisted nuclear bound state of $Ξ^-$-$^{14}$N system

In an emulsion-counter hybrid experiment performed at J-PARC, a $Ξ^-$ absorption event was observed which decayed into twin single-$Λ$ hypernuclei. Kinematic calculations enabled a unique identification of the reaction process as $Ξ^{-} + ^{14}$N$\ \rightarrow\ ^{10}_Λ$Be + $^5_Λ$He. For the binding energy of the $Ξ^{-}$ hyperon in the $Ξ^-$-$^{14}$N system a value of $1.27 \pm 0.21$ MeV was deduced. The energy level of $Ξ^-$ is likely a nuclear $1p$ state which indicates a weak $ΞN$-$ΛΛ$ coupling.

nucl-ex↗

arXiv2021

One-Dimensional Edge Contact to Encapsulated MoS2 with a Superconductor

Establishing ohmic contact to van der Waals semiconductors such as MoS2 is crucial to unlocking their full potential in next-generation electronic devices. Encapsulation of few layer MoS2 with hBN preserves the material's electronic properties but makes electrical contacts more challenging. Progress toward high quality edge contact to encapsulated MoS2 has been recently reported. Here, we evaluate a contact methodology using sputtered MoRe, a Type II superconductor with a relatively high critical field and temperature commonly used to induce superconductivity in graphene. We find that the contact transparency is poor and that the devices do not support a measurable supercurrent down to 3 Kelvin, which has ramifications for future fabrication recipes.

cond-mat.mes-hall↗

arXiv2021

Spin-orbit-enhanced robustness of supercurrent in graphene/WS$_2$ Josephson junctions

We demonstrate enhanced robustness of the supercurrent through graphene-based Josephson junctions in which strong spin-orbit interactions (SOIs) are induced. We compare the persistence of a supercurrent at high magnetic fields between Josephson junctions with graphene on hexagonal boron-nitride and graphene on WS$_2$, where strong SOIs are induced via the proximity effect. We find that in the shortest junctions both systems display signatures of induced superconductivity, characterized by a suppressed differential resistance at a low current, in magnetic fields up to 1 T. In longer junctions however, only graphene on WS$_2$ exhibits induced superconductivity features in such high magnetic fields, and they even persist up to 7 T. We argue that these robust superconducting signatures arise from quasi-ballistic edge states stabilized by the strong SOIs induced in graphene by WS$_2$.

cond-mat.mes-hall↗

arXiv2020

Overdamped Phase Diffusion in hBN Encapsulated Graphene Josephson Junctions

We investigate the zero-bias behavior of Josephson junctions made of encapsulated graphene boron nitride heterostructures in the long ballistic junction regime. For temperatures down to 2.7K, the junctions appear non-hysteretic with respect to the switching and retrapping currents $I_C$ and $I_R$. A small non-zero resistance is observed even around zero bias current, and scales with temperature as dictated by the phase diffusion mechanism. By varying the graphene carrier concentration we are able to confirm that the observed phase diffusion mechanism follows the trend for an overdamped Josephson junction. This is in contrast with the majority of graphene-based junctions which are underdamped and shorted by the environment at high frequencies.

cond-mat.mes-hall↗

arXiv2020

Excitonic complexes in $n$-doped WS$_2$ monolayer

We investigate the origin of emission lines apparent in the low-temperature photoluminescence spectra of $n$-doped WS$_2$ monolayer embedded in hexagonal BN layers using external magnetic fields and first-principles calculations. Apart from the neutral A exciton line, all observed emission lines are related to the negatively charged excitons. Consequently, we identify emissions due to both the bright (singlet and triplet) and dark (spin- and momentum-forbidden) negative trions as well as the phonon replicas of the latter optically-inactive complexes. The semi-dark trions and negative biexcitons are distinguished. Based on their experimentally extracted and theoretically calculated $g$-factors, we identify three distinct families of emissions due to exciton complexes in WS$_2$: bright, intravalley and intervalley dark. The $g$-factors of the spin-split subbands in both the conduction and valence bands are also determined.

cond-mat.mes-hall↗

arXiv2020

Chern Insulators and Topological Flat-bands in Magic-angle Twisted Bilayer Graphene

Magic-angle twisted bilayer graphene (MA-TBG) exhibits intriguing quantum phase transitions triggered by enhanced electron-electron interactions when its flat-bands are partially filled. However, the phases themselves and their connection to the putative non-trivial topology of the flat bands are largely unexplored. Here we report transport measurements revealing a succession of doping-induced Lifshitz transitions that are accompanied by van Hove singularities (VHS) which facilitate the emergence of correlation-induced gaps and topologically non-trivial sub-bands. In the presence of a magnetic field, well quantized Hall plateaus at filling of 1, 2, 3 carriers per moiré-cell reveal the sub-band topology and signal the emergence of Chern insulators with Chern-numbers, ! = !, !, !, respectively. Surprisingly, for magnetic fields exceeding 5T we observe a VHS at a filling of 3.5, suggesting the possibility of a fractional Chern insulator. This VHS is accompanied by a crossover from low-temperature metallic, to high-temperature insulating behavior, characteristic of entropically driven Pomeranchuk-like transitions,

cond-mat.mes-hall↗

arXiv2020

Tunable broadband light emission from graphene

Graphene is an ideal material for integrated nonlinear optics thanks to its strong light-matter interaction and large nonlinear optical susceptibility. Graphene has been used in optical modulators, saturable absorbers, nonlinear frequency converters, and broadband light emitters. For the latter application, a key requirement is the ability to control and engineer the emission wavelength and bandwidth, as well as the electronic temperature of graphene. Here, we demonstrate that the emission wavelength of graphene$'$ s broadband hot carrier photoluminescence can be tuned by integration on photonic cavities, while thermal management can be achieved by out-of-plane heat transfer to hexagonal boron nitride. Our results pave the way to graphene-based ultrafast broadband light emitters with tunable emission.

physics.optics↗

arXiv2020

Deterministic transfer of optical-quality carbon nanotubes for atomically defined technology

When continued device scaling reaches the ultimate limit imposed by atoms, technology based on atomically precise structures is expected to emerge. Device fabrication will then require building blocks with identified atomic arrangements and assembly of the components without contamination. Here we report on a versatile dry transfer technique for deterministic placement of optical-quality carbon nanotubes. Single-crystalline anthracene is used as a medium which readily sublimes by mild heating, leaving behind clean nanotubes and thus enabling bright photoluminescence. We are able to position nanotubes of a desired chirality with a sub-micron accuracy under in-situ optical monitoring, thereby demonstrating deterministic coupling of a nanotube to a photonic crystal nanobeam cavity. A cross junction structure is also designed and constructed by repeating the nanotube transfer, where intertube exciton transfer is observed. Our results represent an important step towards development of devices consisting of atomically precise components and interfaces.

cond-mat.mes-hall↗

arXiv2020

Equilibration and Filtering of Quantum Hall Edge States in Few-Layer Black Phosphorus

We realize p-p'-p junctions in few-layer black phosphorus (BP) devices, and use magneto-transport measurements to study the equilibration and transmission of edge states at the interfaces of regions with different charge densities. We observe both full equilibration, where all edge channels equilibrate and are equally partitioned at the interfaces, and partial equilibration, where only equilibration only takes place among modes of the same spin polarization. Furthermore, the inner p'-region with low-doping level in the junction can function as a filter for highly doped p-regions which demonstrates gate-tunable transmission of edge channels.

cond-mat.mes-hall↗