arXiv subjects

K. Watanabe

Publications and source records attributed to K. Watanabe.

At least 199 records · Page 11Linked to original sources

arXiv2020

Layer- and Gate-tunable Spin-Orbit Coupling in a High Mobility Few-Layer Semiconductor

Spin-orbit coupling (SOC) is a relativistic effect, where an electron moving in an electric field experiences an effective magnetic field in its rest frame. In crystals without inversion symmetry, it lifts the spin degeneracy and leads to many magnetic, spintronic and topological phenomena and applications. In bulk materials, SOC strength is a constant that cannot be modified. Here we demonstrate SOC and intrinsic spin-splitting in atomically thin InSe, which can be modified over an unprecedentedly large range. From quantum oscillations, we establish that the SOC parameter αis thickness-dependent; it can be continuously modulated over a wide range by an out-of-plane electric field, achieving intrinsic spin splitting tunable between 0 and 20 meV. Surprisingly, αcould be enhanced by an order of magnitude in some devices, suggesting that SOC can be further manipulated. Our work highlights the extraordinary tunability of SOC in 2D materials, which can be harnessed for in operando spintronic and topological devices and applications.

cond-mat.mes-hall↗

arXiv2020

Interplay between spin proximity effect and charge-dependent exciton dynamics in MoSe$_2$ / CrBr$_3$ van der Waals heterostructures

Semiconducting ferromagnet-nonmagnet interfaces in van der Waals heterostructures present a unique opportunity to investigate magnetic proximity interactions dependent upon a multitude of phenomena including valley and layer pseudospins, moiré periodicity, or exceptionally strong Coulomb binding. Here, we report a charge-state dependency of the magnetic proximity effects between MoSe$_2$ and CrBr$_3$ in photoluminescence, whereby the valley polarization of the MoSe$_2$ trion state conforms closely to the local CrBr$_3$ magnetization, while the neutral exciton state remains insensitive to the ferromagnet. We attribute this to spin-dependent interlayer charge transfer occurring on timescales between the exciton and trion radiative lifetimes. Going further, we uncover by both the magneto-optical Kerr effect and photoluminescence a domain-like spatial topography of contrasting valley polarization, which we infer to be labyrinthine or otherwise highly intricate, with features smaller than 400 nm corresponding to our optical resolution. Our findings offer a unique insight into the interplay between short-lived valley excitons and spin-dependent interlayer tunnelling, while also highlighting MoSe$_2$ as a promising candidate to optically interface with exotic spin textures in van der Waals structures.

cond-mat.mes-hall↗

arXiv2020

Flattening van der Waals heterostructure interfaces by local thermal treatment

Fabrication of custom-built heterostructures based on stacked 2D materials provides an effective method to controllably tune electronic and optical properties. To that end, optimizing fabrication techniques for building these heterostructures is imperative. A common challenge in layer-by-layer assembly of 2D materials is the formation of bubbles at the atomically thin interfaces. We propose a technique for addressing this issue by removing the bubbles formed at the heterostructure interface in a custom-defined area using the heat generated by a laser, equipped with raster scanning capabilities. We demonstrate that the density of bubbles formed at graphene-ReS2 interfaces can be controllably reduced using this method. We discuss an understanding of the flattening mechanism by considering the interplay of interface thermal conductivities and adhesion energies between two atomically thin 2D materials.

cond-mat.mtrl-sci↗

arXiv2020

Long-range ballistic transport of Brown-Zak fermions in graphene superlattices

In quantizing magnetic fields, graphene superlattices exhibit a complex fractal spectrum often referred to as the Hofstadter butterfly. It can be viewed as a collection of Landau levels that arise from quantization of Brown-Zak minibands recurring at rational ($p/q$) fractions of the magnetic flux quantum per superlattice unit cell. Here we show that, in graphene-on-boron-nitride superlattices, Brown-Zak fermions can exhibit mobilities above 10$^6$ cm$^2$V$^{-1}$s$^{-1}$ and the mean free path exceeding several micrometers. The exceptional quality of our devices allows us to show that Brown-Zak minibands are $4q$ times degenerate and all the degeneracies (spin, valley and mini-valley) can be lifted by exchange interactions below 1K. We also found negative bend resistance at $1/q$ fractions for electrical probes placed as far as several micrometers apart. The latter observation highlights the fact that Brown-Zak fermions are Bloch quasiparticles propagating in high fields along straight trajectories, just like electrons in zero field.

cond-mat.mes-hall↗

arXiv2020

Observation of Wigner crystal of electrons in a monolayer semiconductor

When the Coulomb repulsion between electrons dominates over their kinetic energy, electrons in two dimensional systems were predicted to spontaneously break continuous translation symmetry and form a quantum crystal. Efforts to observe this elusive state of matter, termed a Wigner crystal (WC), in two dimensional extended systems have primarily focused on electrons confined to a single Landau level at high magnetic fields, but have not provided a conclusive experimental signature of the emerging charge order. Here, we use optical spectroscopy to demonstrate that electrons in a pristine monolayer semiconductor with density $ \lesssim 3 \cdot 10^{11}$ cm$^{-2}$ form a WC. The interactions between resonantly injected excitons and electrons arranged in a periodic lattice modify the exciton band structure so that it exhibits a new umklapp resonance, heralding the presence of charge order. Remarkably, the combination of a relatively high electron mass and reduced dielectric screening allows us to observe an electronic WC state even in the absence of magnetic field. The tentative phase diagram obtained from our Hartree-Fock calculations provides an explanation of the striking experimental signatures obtained up to $B = 16$ T. Our findings demonstrate that charge-tunable transition metal dichalcogenide (TMD) monolayers enable the investigation of previously uncharted territory for many-body physics where interaction energy dominates over kinetic energy, even in the absence of a moire potential or external fields.

cond-mat.mes-hall↗

arXiv2020

Nonlinear twistoptics at symmetry-broken interfaces

Broken symmetries induce strong nonlinear optical responses in materials and at interfaces. Twist angle can give complete control over the presence or lack of inversion symmetry at a crystal interface, and is thus an appealing knob for tuning nonlinear optical systems. In contrast to conventional nonlinear crystals with rigid lattices, the weak interlayer coupling in van der Waals (vdW) heterostructures allows for arbitrary selection of twist angle, making nanomechanical manipulation of fundamental interfacial symmetry possible within a single device. Here we report highly tunable second harmonic generation (SHG) from nanomechanically rotatable stacks of bulk hexagonal boron nitride (BN) crystals, and introduce the term twistoptics to describe studies of optical properties in dynamically twistable vdW systems. We observe SHG intensity modulated by a factor of more than 50, polarization patterns determined by moiré interface symmetry, and enhanced conversion efficiency for bulk crystals by stacking multiple pieces of BN joined by symmetry-broken interfaces. Our study provides a foundation for compact twistoptics architectures aimed at efficient, scalable, and tunable frequency-conversion, and demonstrates SHG as a robust probe of buried vdW interfaces.

cond-mat.mes-hall↗

arXiv2020

Demonstration of a polariton step potential by local variation of light-matter coupling in a van-der-Waals heterostructure

The large oscillator strength of excitons in transition metal dichalcogenide layers facilitates the formation of exciton-polariton resonances for monolayers and van-der-Waals heterostructures embedded in optical microcavities. Here, we show, that locally changing the number of layers in a WSe2/hBN/WSe2 van-der-Waals heterostructure embedded in a monolithic, high-quality-factor cavity gives rise to a local variation of the coupling strength. This effect yields a polaritonic stair case potential, which we demonstrate at room temperature. Our result paves the way towards engineering local polaritonic potentials at length scales down to atomically sharp interfaces, based on purely modifying its real part contribution via the coherent light-matter coupling strength g.

cond-mat.mes-hall↗

arXiv2020

Integration of multi-layer black phosphorus into photoconductive antennas for THz emission

We report the fabrication, characterization, and modeling of photoconductive antennas using 40 nm thin-film flakes of black phosphorus (BP) as the photoconductor and hexagonal boron nitride (hBN) as a capping layer to prevent oxidation of BP. Dipole antennas were fabricated on oxidized high-resistivity Si substrates, and BP and hBN flakes were picked up and transferred onto the antenna inside a nitrogen glovebox. The transfer matrix technique was used to optimize the thickness of BP and hBN for maximum absorption. BP flakes were aligned with the armchair axis along the anode-cathode gap of the antenna, with crystal orientation measured using reflection anisotropy. Photocurrent imaging under illumination with 100 fs pulses at 780 and 1560 nm showed a bias-dependent maximum photocurrent localized to the antenna gap with a peak photoconductivity of 1 (2) S/cm in the linear regime of bias for excitation at 780 (1560) nm. Photocurrent saturation in bias (pump fluence) occurred at approximately 1 V (0.25 mJ/cm$^2$). Device performance was modeled numerically by solving Maxwell's equations and the drift-diffusion equation to obtain the photocurrent density in response to pulsed laser excitation, which was largely in qualitative agreement with the experimental observations. THz output computed from surface current density suggests that BP THz PCA performance is at least comparable to more traditional devices based on low-temperature-grown GaAs. These devices represent a step toward high-performance THz photoconductive antennas using BP.

physics.app-ph↗

arXiv2020

Tuning electron correlation in magic-angle twisted bilayer graphene using Coulomb screening

The ability to control the strength of interaction is essential for studying quantum phenomena emerging from a system of correlated fermions. For example, the isotope effect illustrates the effect of electron-phonon coupling on superconductivity, providing an important experimental support for the BCS theory. In this work, we report a new device geometry where the magic-angle twisted bilayer graphene (tBLG) is placed in close proximity to a Bernal bilayer graphene (BLG) separated by a 3 nm thick barrier. Using charge screening from the Bernal bilayer, the strength of electron-electron Coulomb interaction within the twisted bilayer can be continuously tuned. Transport measurements show that tuning Coulomb screening has opposite effect on the insulating and superconducting states: as Coulomb interaction is weakened by screening, the insulating states become less robust, whereas the stability of superconductivity is enhanced. Out results demonstrate the ability to directly probe the role of Coulomb interaction in magic-angle twisted bilayer graphene. Most importantly, the effect of Coulomb screening points toward electron-phonon coupling as the dominant mechanism for Cooper pair formation, and therefore superconductivity, in magic-angle twisted bilayer graphene.

cond-mat.mes-hall↗

arXiv2020

Full energy spectra of interface state densities for n- and p-type MoS2 field-effect transistors

Two-dimensional (2D) layered materials are promising for replacing Si to overcome the scaling limit of recent ~5 nm-length metal-oxide-semiconductor field-effect transistors (MOSFETs). However, the insulator/2D channel interface severely degrades the performance of 2D-based MOSFETs, and the origin of the degradation remains largely unexplored. Here, we present the full energy spectra of the interface state densities (Dit) for both n- and p- MoS2 FETs, based on the comprehensive and systematic studies, i.e., thickness range from monolayer to bulk and various gate stack structures including 2D heterostructure with h-BN as well as typical high-k top-gate structure. For n-MoS2, Dit around the mid gap is drastically reduced to 5*10^11 cm-2eV-1 for the heterostructure FET with h-BN from 5*10^12 cm-2eV-1 for the high-k top-gate MoS2 FET. On the other hand, Dit remains high, ~10^13 cm-2eV-1, even for the heterostructure FET for p-MoS2. The systematic study elucidates that the strain induced externally through the substrate surface roughness and high-k deposition process is the origin for the interface degradation on the conduction band side, while sulfur-vacancy-induced defect-states dominate the interface degradation on the valance band side. The present understanding on the interface properties provides the key to further improving the performance of 2D FETs.

physics.app-ph↗

arXiv2020

Terahertz photogalvanics in twisted bilayer graphene close to the second magic angle

We report on the observation of photogalvanic effects in twisted bilayer graphene (tBLG) with a twist angle of 0.6°. We show that excitation of tBLG bulk causes a photocurrent, whose sign and magnitude are controlled by orientation of the radiation electric field and the photon helicity. The observed photocurrent provides evidence for the reduction of the point group symmetry in low twist-angle tBLG to the lowest possible one. The developed theory shows that the current is formed by asymmetric scattering in gyrotropic tBLG. We also detected the photogalvanic current formed in the vicinity of the edges. For both, bulk and edge photocurrents, we demonstrate the emergence of pronounced oscillations upon variation of the gate voltage. The gate voltages associated with the oscillations coincide well with peaks in resistance measurements. These are well explained by inter-band transitions between a multitude of isolated bands in tBLG.

cond-mat.mes-hall↗

arXiv2020

Imaging orbital ferromagnetism in a moiré Chern insulator

Electrons in moiré flat band systems can spontaneously break time reversal symmetry, giving rise to a quantized anomalous Hall effect. Here we use a superconducting quantum interference device to image stray magnetic fields in one such system composed of twisted bilayer graphene aligned to hexagonal boron nitride. We find a magnetization of several Bohr magnetons per charge carrier, demonstrating that the magnetism is primarily orbital in nature. Our measurements reveal a large change in the magnetization as the chemical potential is swept across the quantum anomalous Hall gap consistent with the expected contribution of chiral edge states to the magnetization of an orbital Chern insulator. Mapping the spatial evolution of field-driven magnetic reversal, we find a series of reproducible micron scale domains whose boundaries host chiral edge states.

cond-mat.mes-hall↗

arXiv2020

How the dynamic of photo-induced gate screening complicates the investigation of valley physics in 2D materials

An in-depth analysis of valley physics in 2D materials like transition metal dichalcogenides requires the measurement of many material properties as a function of Fermi level position within the electronic band structure. This is normally done by changing the charge carrier density of the 2D material via the gate electric field effect. Here, we show that a comparison of gate-dependent measurements, which were acquired under different measurement conditions can encounter significant problems due to the temporal evolution of the charging of trap states inside the dielectric layer or at its interfaces. The impact of, e.g., the gate sweep direction and the sweep rate on the overall gate dependence gets especially prominent in optical measurements due to photo-excitation of donor and acceptor states. Under such conditions the same nominal gate-voltage may lead to different gate-induced charge carrier densities and, hence, Fermi level positions. We demonstrate that a current flow from or even through the dielectric layer via leakage currents can significantly diminish the gate tunability in optical measurements of 2D materials.

cond-mat.mes-hall↗

arXiv2020

Ultrasensitive Photoresponse of Graphene Quantum Dot in the Coulomb Blockade Regime to THz Radiation

Graphene quantum dots (GQDs) have recently attracted considerable attention, with appealing properties for terahertz (THz) technology. This includes the demonstration of large thermal bolometric effects in GQDs when illuminated by THz radiation. However, the interaction of THz photons with GQDs in the Coulomb blockade regime - single electron transport regime - remains unexplored. Here, we demonstrate the ultrasensitive photoresponse to THz radiation (from <0.1 to 10 THz) of a hBN-encapsulated GQD in the Coulomb blockade regime at low temperature (170 mK). We show that THz radiation of $\sim$10 pW provides a photocurrent response in the nanoampere range, resulting from a renormalization of the chemical potential of the GQD of $\sim$0.15 meV. We attribute this photoresponse to an interfacial photogating effect. Furthermore, our analysis reveals the absence of thermal effects, opening new directions in the study of coherent quantum effects at THz frequencies in GQDs.

cond-mat.mes-hall↗

arXiv2020

Enhanced exciton-exciton collisions in an ultra-flat monolayer MoSe2 prepared through deterministic flattening

Squeezing bubbles and impurities out of interlayer spaces by applying force through a few-layer graphene capping layer leads to van der Waals heterostructures with ultra-flat structure free from random electrostatic potential arising from charged impurities. Without the graphene capping layer, a squeezing process with an AFM tip induces applied-force-dependent charges of n ~ 2 x 10^12 cm^-2 uN^-1, resulting in strong intensity of trions in photoluminescence spectra of MoSe2 at low temperature. We found that a hBN/MoSe2/hBN prepared with the "modified nano-squeezing method" shows a strong excitonic emission with negligible trion peak, and the residual linewidth of the exciton peak is only 2.2 meV, which is comparable to the homogeneous limit. Furthermore, in this high-quality sample, we found that formation of biexciton occurs even at extremely low excitation power (Phi ~ 2.3 x 10^19 cm^-2 s^-1) due to the enhanced collisions between excitons.

cond-mat.mes-hall↗

arXiv2020

Electrically pumped WSe$_2$-based light-emitting van der Waals heterostructures embedded in monolithic dielectric microcavities

Vertical stacking of atomically thin layered materials opens new possibilities for the fabrication of heterostructures with favorable optoelectronic properties. The combination of graphene, hexagonal boron nitride and semiconducting transition metal dichalcogenides allows fabrication of electroluminescence (EL) devices, compatible with a wide range of substrates. Here, we demonstrate a full integration of an electroluminescent van der Waals heterostructure in a monolithic optical microcavity made of two high reflectivity dielectric distributed Bragg reflectors (DBRs). Owing to the presence of graphene and hexagonal boron nitride protecting the WSe$_2$ during the top mirror deposition, we fully preserve the optoelectronic behaviour of the device. Two bright cavity modes appear in the EL spectrum featuring Q-factors of 250 and 580 respectively: the first is attributed directly to the monolayer area, while the second is ascribed to the portion of emission guided outside the WSe$_2$ island. By embedding the EL device inside the microcavity structure, a significant modification of the directionality of the emitted light is achieved, with the peak intensity increasing by nearly two orders of magnitude at the angle of the maximum emission compared with the same EL device without the top DBR. Furthermore, the coupling of the WSe$_2$ EL to the cavity mode with a dispersion allows a tuning of the peak emission wavelength exceeding 35 nm (80 meV) by varying the angle at which the EL is observed from the microcavity. This work provides a route for the development of compact vertical-cavity surface-emitting devices based on van der Waals heterostructures.

physics.optics↗

arXiv2020

Neutral and charged dark excitons in monolayer WS$_2$

Low temperature and polarization resolved magneto-photoluminescence experiments are used to investigate the properties of dark excitons and dark trions in a monolayer of WS$_2$ encapsulated in hexagonal BN (hBN). We find that this system is an $n$-type doped semiconductor and that dark trions dominate the emission spectrum. In line with previous studies on WSe$_2$, we identify the Coulomb exchange interaction coupled neutral dark and grey excitons through their polarization properties, while an analogous effect is not observed for dark trions. Applying the magnetic field in both perpendicular and parallel configurations with respect to the monolayer plane, we determine the g-factor of dark trions to be $g\sim$-8.6. Their decay rate is close to 0.5 ns, more than 2 orders of magnitude longer than that of bright excitons.

cond-mat.mes-hall↗

arXiv2020

Fractional quantum Hall effect in CVD-grown graphene

We show the emergence of fractional quantum Hall states in dry-transferred chemical vapor deposition (CVD) derived graphene assembled into heterostructures for magnetic fields from below 3 T to 35 T. Effective composite-fermion filling factors up to $ν^* = 4$ are visible and higher order composite-fermion states (with four flux quanta attached) start to emerge at the highest fields. Our results show that the quantum mobility of CVD-grown graphene is comparable to that of exfoliated graphene and, more specifically, that the $p/3$ fractional quantum Hall states have energy gaps of up to 30 K, well comparable to those observed in other silicon-gated devices based on exfoliated graphene.

cond-mat.mes-hall↗