arXiv subjects

Kai Chang

Publications and source records attributed to Kai Chang.

At least 73 records · Page 4Linked to original sources

arXiv2023

Giant Apparent Flexoelectricity in Semiconductors Driven by Insulator-to-metal Transition

We elucidate the flexoelectricity of materials in the high strain gradient regime, of which the underlying mechanism is less understood. By using the generalized Bloch theorem, we uncover a strong flexoelectric-like effect in bent thinfilms of Si and Ge due to a high strain gradient-induced insulator-to-metal transition. We show that an unusual type-II band alignment is formed between the compressed and elongated sides of the bent film, resulting in a spatial separation of electron and hole. Therefore, upon the insulator-to-metal transition, electrons transfer from the compressed side to the elongated side to reach the thermodynamic equilibrium, leading to pronounced polarization along the film thickness dimension. The obtained transverse flexoelectric coefficients are unexpectedly high, with a quadratic dependence on the film thickness. This new mechanism is extendable to other semiconductor materials with moderate energy gaps. Our findings have important implications for the future applications of flexoelectricity in semiconductor materials.

cond-mat.mtrl-sci↗

arXiv2023

Reducing operator complexity in Algebraic Multigrid with Machine Learning Approaches

We propose a data-driven and machine-learning-based approach to compute non-Galerkin coarse-grid operators in algebraic multigrid (AMG) methods, addressing the well-known issue of increasing operator complexity. Guided by the AMG theory on spectrally equivalent coarse-grid operators, we have developed novel ML algorithms that utilize neural networks (NNs) combined with smooth test vectors from multigrid eigenvalue problems. The proposed method demonstrates promise in reducing the complexity of coarse-grid operators while maintaining overall AMG convergence for solving parametric partial differential equation (PDE) problems. Numerical experiments on anisotropic rotated Laplacian and linear elasticity problems are provided to showcase the performance and compare with existing methods for computing non-Galerkin coarse-grid operators.

math.NA↗

arXiv2023

Temperature-Induced Magnonic Chern Insulator in Collinear Antiferromagnets

Thermal fluctuation in magnets will bring temperature-dependent self-energy corrections to the magnons, however, their effects on the topological orders of magnons is not well explored. Here we demonstrate that such corrections can induce a Chern insulating phase in two-dimensional collinear antiferromagnets with sublattice asymmetries by increasing temperature. We present the phase diagram of the system and show that the trivial magnon bands at zero temperature exhibit Chern insulating phase above a critical temperature before the paramagnetic phase transition. The self-energy corrections close and reopen the bandgap at Γ or K points, accompanied by a magnon chirality switch and nontrivial Berry curvature transition. The thermal Hall effect of magnons or detecting the magnon polarization can give experimentally prominent signatures of topological transitions. We include the numerical results based on van der Waals magnet MnPS3, calling for experimental implementation. Our work presents a new paradigm for constructing topological phase that is beyond the linear spin wave theory.

cond-mat.mes-hall↗

arXiv2022

Quantum Hall phase in graphene engineered by interfacial charge coupling

Quantum Hall effect (QHE), the ground to construct modern conceptual electronic systems with emerging physics, is often much influenced by the interplay between the host two-dimensional electron gases and the substrate, sometimes predicted to exhibit exotic topological states. Yet the understanding of the underlying physics and the controllable engineering of this paradigm of interaction remain challenging. Here we demonstrate the observation of an unusual QHE, which differs markedly from the known picture, in graphene samples in contact with an anti-ferromagnetic insulator CrOCl equipped with dual gates. Owing to the peculiar interfacial coupling, Landau levels in monolayer graphene remain intact at negative filling fractions, but largely deviated for the positive gate-doping range. The latter QHE phase even presents in the limit of zero magnetic field, with the consequential Landau quantization following a parabolic relation between the displacement field $D$ and the magnetic field $B$. This characteristic prevails up to 100 K in a sufficiently wide effective doping range from 0 to 10$^{13}$ cm$^{-2}$. Our findings thus open up new routes for manipulating the quantum electronic states, which may find applications in such as quantum metrology.

cond-mat.mes-hall↗

arXiv2022

Realistic simulation of reflection high-energy electron diffraction patterns for two-dimensional lattices using Ewald construction

Reflection high-energy electron diffraction (RHEED) is a powerful tool for characterizing crystal surface structures. However, the setup geometry leads to distorted and complicated patterns, which are not straightforward to link to the real-space structures. A program with a graphical user interface is provided here to simulate the RHEED patterns. Following the Ewald construction in the kinematic theory, we find out the exact geometric transformation in this model that determines the positions of diffraction spots. The program can deal with many forms of surface structures, including surface reconstructions or domains. The simulations exhibit great agreement with the experimental results in various cases. This program will benefit the structure analysis in thin film growth and surface science studies.

cond-mat.mtrl-sci↗

arXiv2022

Rapid genetic screening with high quality factor metasurfaces

Genetic analysis methods are foundational to advancing personalized and preventative medicine, accelerating disease diagnostics, and monitoring the health of organisms and ecosystems. Current nucleic acid technologies such as polymerase chain reaction (PCR), next-generation sequencing (NGS), and DNA microarrays rely on fluorescence and absorbance, necessitating sample amplification or replication and leading to increased processing time and cost. Here, we introduce a label-free genetic screening platform based on high quality (high-Q) factor silicon nanoantennas functionalized with monolayers of nucleic acid fragments. Each nanoantenna exhibits substantial electromagnetic field enhancements with sufficiently localized fields to ensure isolation from neighboring resonators, enabling dense biosensor integration. We quantitatively detect complementary target sequences using DNA hybridization simultaneously for arrays of sensing elements patterned at densities of 160,000 pixels per cm$^2$. In physiological buffer, our nanoantennas exhibit average resonant quality factors of 2,200, allowing detection of two gene fragments, SARS-CoV-2 envelope (E) and open reading frame 1b (ORF1b), down to femtomolar concentrations. We also demonstrate high specificity sensing in clinical nasopharyngeal eluates within 5 minutes of sample introduction. Combined with advances in biomarker isolation from complex samples (e.g., mucus, blood, wastewater), our work provides a foundation for rapid, compact, amplification-free and high throughput multiplexed genetic screening assays spanning medical diagnostics to environmental monitoring.

physics.optics↗

arXiv2022

Selectively controlled ferromagnets by electric fields in van der Waals ferromagnetic heterojunctions

Charge transfer plays a key role at the interfaces of heterostructures, which can affect electronic structures and ultimately the physical properties of the materials. However, charge transfer is difficult to manipulate externally once the interface formed. Here, we report electrically tunable charge transfer in Fe3GeTe2/Cr2Ge2Te6/Fe3GeTe2 all-magnetic van der Waals heterostructures, which can be exploited to selectively modify the magnetic properties of the top or bottom Fe3GeTe2 electrodes. The directional charge transfer from metallic Fe3GeTe2 to semiconducting Cr2Ge2Te6 remarkably modifies magnetic anisotropy energy of Fe3GeTe2, leading to the dramatically suppressed coercivity. The electrically selective control of ferromagnets demonstrated in this study could stimulate the development of spintronic devices based on van der Waals magnets.

cond-mat.mtrl-sci↗

arXiv2022

Higher-order Topological Phases of Magnons in van der Waals Honeycomb Ferromagnets

We theoretically propose a second-order topological magnon insulator by stacking the van der Waals honeycomb ferromagnets with antiferromagnetic interlayer coupling. The system exhibits Z$_{2}$ topological phase, protected by pseudo-time-reversal symmetry (PTRS). An easy-plane anisotropy term breaks PTRS and destroys the topological phase. Nevertheless, it respects a magnetic two-fold rotational symmetry which protects a second-order topological phase with corner modes in bilayer and hinge modes along stacking direction. Moreover, an introduced staggered interlayer coupling establishes a Z$_{2}$$\times$Z topology, giving rise to gapped topological surface modes carrying non-zero Chern numbers. Consequently, chiral hinge modes propagate along the horizontal hinges in a cuboid geometry and are robust against disorders. Our work bridges the higher-order topology and magnons in van der Waals platforms, and could be used for constructing topological magnonic devices.

cond-mat.mes-hall↗

arXiv2021

Transversal Flexoelectricity of Semiconductor Thinfilm under High Strain Gradient

The flexoelectric behaviors of solids under high strain gradient can be distinct from that under low strain gradient. Using the generalized Bloch theorem, we investigate theoretically the transversal flexoelectric effects in bent MgO thinfilms. As a comparison, a centrosymmetric (100) film and a non-centrosymmetric (111) film are considered. Under bending, the mechanical responses of both films are linear elastic under low strain gradient but nonlinear elastic under high strain gradient. In the linear elastic regime, no internal displacements and thus no polarization contributed from ions are induced. Only in the nonlinear elastic regime, atoms adopt discernibly large internal displacements, leading to strong polarization from ions. Because the internal displacements of atoms of the (111) film are much larger than those of the (100) film, the obtained flexoelectric coefficient of the (111) film is also greater than that of the (100) film, revealing strong anisotropy of flexoelectricity of MgO film. Our results and the employed approach have important implications for the study of flexoelectric properteis of ionic solids.

physics.comp-ph↗

arXiv2021

Intrinsic 2D-XY ferromagnetism in a van der Waals monolayer

Long before the recent fascination with two-dimensional materials, the critical behaviour and universality scaling of phase transitions in low-dimensional systems has been a topic of great interest. Particularly intriguing is the case of long-range magnetic order in two dimensions, once considered to be excluded in systems with continuous symmetry by the Hohenberg-Mermin-Wagner theorem. While an out-of-plane anisotropy has been shown to stabilize 2D magnetic order, this proof has remained elusive for a 2D magnet with in-plane rotational symmetry. Here, we construct a nearly ideal easy-plane system, a CrCl3 monolayer grown on Graphene/6H-SiC (0001), and unambiguously demonstrate robust in-plane ferromagnetic ordering with a critical scaling behaviour characteristic of a 2D-XY system. These observations suggest the first realization of a finite-size Berezinskii-Kosterlitz-Thouless (BKT) phase transition in a large-area, quasi-freestanding, van der Waals monolayer magnet with a XY universality class; and further constitute an ideal platform to study exotic phenomena like superfluid spin transport or 2D topological in-plane spin textures -- such as merons.

cond-mat.mes-hall↗

arXiv2020

Exciton vortices in two-dimensional hybrid perovskite monolayers

We study theoretically the exciton Bose-Einstein condensation and exciton vortices in a two-dimensional (2D) perovskite (PEA)2PbI4 monolayer. Combining the first-principles calculations and the Keldysh model, the exciton binding energy of (PEA)2PbI4 in a monolayer can approach hundreds meV, which make it possible to observe the excitonic effect at room temperature. Due to the large exciton binding energy, and hence the high density of excitons, we find that the critical temperature of the exciton condensation could approach the liquid nitrogen regime. In presence of perpendicular electric fields, the dipole-dipole interaction between excitons is found to drive the condensed excitons into patterned vortices, as the evolution time of vortex patterns is comparable to the exciton lifetime.

cond-mat.mes-hall↗

arXiv2020

Colloquium: Physical properties of group-IV monochalcogenide monolayers

We survey the state-of-the-art knowledge of ferroelectric and ferroelastic group-IV monochalcogenide monolayers. These semiconductors feature remarkable structural and mechanical properties, such as a switchable in-plane spontaneous polarization, soft elastic constants, structural degeneracies, and thermally-driven two-dimensional structural transformations. Additionally, these 2D materials also display selective valley excitations, valley Hall effects, and persistent spin helix behavior. After a description of their Raman spectra, a discussion of optical properties arising from their lack of centrosymmetry---such as an unusually strong second-harmonic intensity, large bulk photovoltaic effects, photostriction, and tunable exciton binding energies---is provided as well. The physical properties observed in these materials originate from (correlate with) their intrinsic and switchable electric polarization, and the physical behavior hereby reviewed could be of use in non-volatile memory, valleytronic, spintronic, and optoelectronic devices: these 2D multiferroics enrich and diversify the 2D materials toolbox.

cond-mat.mes-hall↗

arXiv2020

Giant Flexoelectricity in Bent Silicon Thinfilms

We reveal that strong flexoelectric effect of solids can be induced due to the signfi?cant charge migration along the strain gradient direction, which represents a new understanding of the origin of flexoelectricity. Beyond the linear response theory, we illustrate such charge migration that is driven by an electric field effect in bent silicon thinfilms. Due to such charge migration, the variation of atomic charge no longer represents a linear response to strain gradient and the resulting giant flexoelectric coeffcients being size dependent cannot be treated as a bulk property. The obtained flexoelectric coefficients compare well with the typical experimental values as reported in various ceramics. Our results shed light on elucidating the discrepancy between theory and experiment,and pave a new way to discover excellent flexoelectric performance in conventional materials.

cond-mat.mtrl-sci↗

arXiv2020

Microscopic manipulation of ferroelectric domains in SnSe monolayers at room temperature

Two-dimensional (2D) van der Waals ferroelectrics provide an unprecedented architectural freedom for the creation of artificial multiferroics and non-volatile electronic devices based on vertical and co-planar heterojunctions of 2D ferroic materials. Nevertheless, controlled microscopic manipulation of ferroelectric domains is still rare in monolayer-thick 2D ferroelectrics with in-plane polarization. Here we report the discovery of robust ferroelectricity with a critical temperature close to 400 K in SnSe monolayer plates grown on graphene, and the demonstration of controlled room temperature ferroelectric domain manipulation by applying appropriate bias voltage pulses to the tip of a scanning tunneling microscope (STM). This study shows that STM is a powerful tool for detecting and manipulating the microscopic domain structures in 2D ferroelectric monolayers, which is difficult for conventional approaches such as piezoresponse force microscopy, thus facilitating the hunt for other 2D ferroelectric monolayers with in-plane polarization with important technological applications.

cond-mat.mtrl-sci↗

arXiv2020

Experimental formation of monolayer group-IV monochalcogenides

Monolayer group-IV monochalcogenides (MX, M = Ge, Sn, Pb; X = S, Se, Te) are a family of novel two-dimensional (2D) materials that have atomic structures closely related to that of the staggered black phosphorus lattice. The structure of most monolayer MX materials exhibits a broken inversion symmetry, and many of them exhibit ferroelectricity with a reversible in-plane electric polarization. A further consequence of the noncentrosymmetric structure is that when coupled with strong spin-orbit coupling, many MX materials are promising for the future applications in non-linear optics, photovoltaics, spintronics and valleytronics. Nevertheless, because of the relatively large exfoliation energy, the creation of monolayer MX materials is not easy, which hinders the integration of these materials into the fast-developing field of 2D material heterostructures. In this Perspective, we review recent developments in experimental routes to the creation of monolayer MX, including molecular beam epitaxy and two-step etching methods. Other approaches that could be used to prepare monolayer MX are also discussed, such as liquid phase exfoliation and solution phase synthesis. A quantitative comparison between these different methods is also presented.

cond-mat.mtrl-sci↗

arXiv2020

Geometric photon-drag effect and nonlinear shift current in centrosymmetric crystals

The nonlinear shift current, also known as the bulk photovoltaic current generated by linearly polarized light, has long been known to be absent in crystals with inversion symmetry. Here we argue that a non-zero shift current in centrosymmetric crystals can be activated by a photon-drag effect. Photon-drag shift current proceeds from a `shift current dipole' (a geometric quantity characterizing interband transitions) and manifests a purely transverse response in centrosymmetric crystals. This transverse nature proceeds directly from the shift-vector's pseudovector nature under mirror operation and underscores its intrinsic geometric origin. Photon-drag shift current can greatly enhanced by coupling to polaritons and provides a new and sensitive tool to interrogate the subtle interband coherences of materials with inversion symmetry previously thought to be inaccessible via photocurrent probes.

cond-mat.mes-hall↗

arXiv2020

Direct observation of handedness-dependent quasiparticle interference in the two enantiomers of topological chiral semimetal PdGa

It has recently been proposed that combining chirality with topological band theory may result in a totally new class of fermions. These particles have distinct properties: they appear at high symmetry points of the reciprocal lattice, they are connected by helicoidal surface Fermi arcs spanning the entire Brillouin zone, and they are expected to exist over a large energy range. Additionally, they are expected to give rise to totally new effects forbidden in other topological classes. Understanding how these unconventional quasiparticles propagate and interact is crucial for exploiting their potential in innovative chirality-driven device architectures. These aspects necessarily rely on the detection of handedness-dependent effects in the two enantiomers and remain largely unexplored so far. Here, we use scanning tunnelling microscopy to visualize the electronic properties of both enantiomers of the prototypical chiral topological semimetal PdGa at the atomic scale. We reveal that the surface-bulk connectivity goes beyond ensuring the existence of topological Fermi arcs, but also determines how quasiparticles propagate and scatter at impurities, giving rise to chiral quantum interference patterns of opposite handedness and opposite spiralling direction for the two different enantiomers, a direct manifestation of the change of sign of their Chern number. Additionally, we demonstrate that PdGa remains topologically non-trivial over a large energy range, experimentally detecting Fermi arcs in an energy window of more than 1.6 eV symmetrically centerd around the Fermi level. These results are rationalized in terms of the deep connection between chirality in real and reciprocal space in this class of materials, and they allow to identify PdGa as an ideal topological chiral semimetal.

cond-mat.mes-hall↗

arXiv2020

Spin-Triplet Excitonic Insulator: The Case of Graphone

While various excitonic insulators have been studied in the literature, due to the perceived too-small spin splitting, spin-triplet excitonic insulator is rare. In two-dimensional systems such as a graphone, however, it is possible, as revealed by first-principles calculations coupled with Bethe-Salpeter equation. The critical temperature, given by an effective Hamiltonian, is 11.5 K. While detecting excitonic insulators is still a daunting challenge, the condensation of triplet excitons will result in spin superfluidity, which can be directly measured by a transport experiment. Nonlocal dielectric screening also leads to an unexpected phenomenon, namely, an indirect-to-direct transition crossover between single-particle band and exciton dispersion in graphone, which offers yet another test by experiment.

cond-mat.mtrl-sci↗