arXiv subjects

Kai Chang

Publications and source records attributed to Kai Chang.

At least 91 records · Page 5Linked to original sources

arXiv2019

Towards Weyltronics: Realization of epitaxial NbP and TaP Weyl Semimetal thin films

Weyl Semimetals (WSMs), a recently discovered topological state of matter, exhibit an electronic structure governed by linear band dispersions and degeneracy (Weyl) points leading to rich physical phenomena, which are yet to be exploited in thin film devices. While WSMs were established in the monopnictide compound family several years ago, the growth of thin films has remained a challenge. Here, we report the growth of epitaxial thin films of NbP and TaP by means of molecular beam epitaxy. Single crystalline films are grown on MgO (001) substrates using thin Nb (Ta) buffer layers, and are found to be tensile strained (1%) and with slightly P-rich stoichiometry with respect to the bulk crystals. The resulting electronic structure exhibits topological surface states characteristic of a P-terminated surface and linear dispersion bands in agreement with the calculated band structure, and a Fermi-level shift of -0.2 eV with respect to the Weyl points. Consequently, the electronic transport is dominated by both holes and electrons with carrier mobilities close to 10^3 cm2/Vs at room-temperature. The growth of epitaxial thin films opens up the use of strain and controlled doping to access and tune the electronic structure of Weyl Semimetals on demand, paving the way for the rational design and fabrication of electronic devices ruled by topology.

cond-mat.mes-hall↗

arXiv2019

Electrical Control of Large Rashba Effect in Oxide Heterostructures

Large Rashba effect efficiently tuned by an external electric field is highly desired for spintronic devices. Using first-principles calculations, we demonstrate that large Rashba splitting is locked at conduction band minimum in ferroelectric Bi(Sc/Y/La/Al/Ga/In)O3/PbTiO3 heterostructures where the position of Fermi level is precisely controlled via its stoichiometry. Fully reversible Rashba spin texture and drastic change of Rashba splitting strength with ferroelectric polarization switching are realized in the symmetric and asymmetric heterostructures, respectively. By artificially tuning the local ferroelectric displacement and the orbital hybridization, the synergetic effect of local potential gradient and orbital overlap on the dramatic change of splitting strength is confirmed. These results improve the feasibility of utilizing Rashba spin-orbit coupling in spintronic devices.

cond-mat.mtrl-sci↗

arXiv2019

Tilted Klein tunneling across atomically sharp interfaces

Despite many similarities between electronics and optics, the hopping of the electron on a discrete atomic lattice gives rise to energy band nonparabolicity and anisotropy. The crucial influences of this effect on material properties and its incorporation into the continuum model have received widespread attention in the past half century. Here we predict the existence of a different effect due to the hopping of the electron across an atomically sharp interface. For a general lattice, its influence on transport could be equally important as the energy band nonparabolicity/anisotropy, but cannot be incorporated into the continuum model. On the honeycomb lattice of graphene, it leads to the breakdown of the conventional Klein tunneling -- one of the exotic phenomena of relativistic particles -- and the onset of tilted Klein tunneling. This works identifies a unique feature of the discrete atomic lattice for transport, which is relevant for ballistic electronic devices at high carrier densities.

cond-mat.mes-hall↗

arXiv2019

From atomic layer to the bulk: low-temperature atomistic structure, ferroelectric and electronic properties of SnTe films

SnTe hosts ferroelectricity that competes with its weak non-trivial band topology: in the high-symmetry rocksalt structure--in which its intrinsic electric dipole is quenched--this material develops metallic surface bands, but in its rhombic ground-state configuration--that hosts a non-zero spontaneous electric dipole--the crystalline symmetry is lowered and the presence of surface electronic bands is not guaranteed. Here, the type of ferroelectric coupling and the atomistic and electronic structure of SnTe films ranging from 2 to 40 ALs are examined on freestanding samples, to which atomic layers were gradually added. 4 AL SnTe films are antiferroelectrically-coupled, while thicker freestanding SnTe films are ferroelectrically-coupled. The electronic band gap reduces its magnitude in going from 2 ALs to 40 ALs but it does not close due to the rhombic nature of the structure. These results bridge the structure of SnTe films from the monolayer to the bulk.

cond-mat.mes-hall↗

arXiv2019

Few-shot machine learning in the three-dimensional Ising model

We investigate theoretically the phase transition in three dimensional cubic Ising model utilizing state-of-the-art machine learning algorithms. Supervised machine learning models show high accuracies (~99\%) in phase classification and very small relative errors ($< 10^{-4}$) of the energies in different spin configurations. Unsupervised machine learning models are introduced to study the spin configuration reconstructions and reductions, and the phases of reconstructed spin configurations can be accurately classified by a linear logistic algorithm. Based on the comparison between various machine learning models, we develop a few-shot strategy to predict phase transitions in larger lattices from trained sample in smaller lattices. The few-shot machine learning strategy for three dimensional(3D) Ising model enable us to study 3D ising model efficiently and provides a new integrated and highly accurate approach to other spin models.

cond-mat.dis-nn↗

arXiv2019

Even-odd dependent optical transitions of zigzag monolayer black phosphorus nanoribbons

We analytically study the electronic structures and optical properties of zigzag-edged black phosphorene nanoribbons (ZPNRs) utilizing the tight-binding (TB) Hamiltonian and Kubo formula. By solving the discrete Schordinger equation directly, we obtain the energy spectra and wavefunctions for a $N$-ZPNR with $N$ number of transverse zigzag atomic chains, and classify the eigenstates according to the lattice symmetry. We then obtain the optical transition selection rule of ZPNRs based on the symmetry analysis and the analytical expressions of the optical transition matrix elements. Under an incident light linearly-polarized along the ribbon, importantly, we find that the optical transition selection rule for the $N$-ZPNR with even- or odd-$N$ is qualitatively different. In specification, for even-$N$ ZPNRs the inter- (intra-) band selection rule is $Δn=$odd (even), since the parity of the wavefunction corresponding to the $n$th subband in the conduction (valence) band is $(-1)^{n}[(-1)^{(n+1)}]$ due to the presence of the $C_{2x}$ symmetry. In contrast, all optical transitions are possible among all subbands due to the absence of the $C_{2x}$ symmetry. Our findings provide a further understanding on the electronic states and optical properties of ZPNRs, which are useful in the explanation of the optical experiment data on ZPNR samples.

cond-mat.mes-hall↗

arXiv2019

Resistive signature of excitonic coupling in an electron-hole double layer with a middle barrier

We study the interlayer scattering mediated by long-range Coulomb interaction between electrons (density n) and holes (p) in a double-layer system. The gated device is made of InAs (e) and InGaSb (h) quantum wells separated by a AlSb middle barrier such that the interlayer tunneling is negligibly small. By using independent-layer contacts we measure the transport tensor \r{ho}_xx and \r{ho}_xy that are solely from the InAs layer, while sweeping p in the InGaSb layer. We found a strongly enhanced resistive scattering signal as the carrier densities approach a total charge neutrality, n = p, which cannot be described by the Fermi-liquid theory. Results of data analysis for density, temperature, and magnetic field dependences are consistent with the emergence of excitonic coupling between the two layers, stressing the dominance of Coulomb interaction even in the presence of disorder.

cond-mat.str-el↗

arXiv2019

In-Plane Ferroelectric Tunnel Junction

The ferroelectric material is an important platform to realize non-volatile memories. So far, existing ferroelectric memory devices utilize out-of-plane polarization in ferroelectric thin films. In this paper, we propose a new type of random-access memory (RAM) based on ferroelectric thin films with the in-plane polarization called "in-plane ferroelectric tunnel junction". Apart from non-volatility, lower power usage and faster writing operation compared with traditional dynamic RAMs, our proposal has the advantage of faster reading operation and non-destructive reading process, thus overcomes the write-after-read problem that widely exists in current ferroelectric RAMs. The recent discovered room-temperature ferroelectric IV-VI semiconductor thin films is a promising material platform to realize our proposal.

physics.app-ph↗

arXiv2018

Selective generation and amplification of RKKY interactions by P-N interface

We propose a physical mechanism to generate and selectively amplify anisotropic Rudermann-Kittel-Kasuya-Yosida (RKKY) interactions between two local spins. The idea is to combine the deflection of the carrier velocity by a P-N interface and the locking of this velocity to the carrier spin orientation via spin-orbit coupling. We provide analytical and numerical results to demonstrate this mechanism on the surface of a topological insulator P-N junction. This work identifies the P-N interface as a second knob which, together with the carrier density, enables independent control of the strength and anisotropy of the RKKY interaction over a wide range. These findings may be relevant to scalable quantum computation and two-impurity quantum criticality.

cond-mat.mes-hall↗

arXiv2018

Quantum Hall Effect in Electron-Doped Black Phosphorus Field-Effect Transistors

The advent of black phosphorus field-effect transistors (FETs) has brought new possibilities in the study of two-dimensional (2D) electron systems. In a black phosphorus FET, the gate induces highly anisotropic 2D electron and hole gases. Although the 2D hole gas in black phosphorus has reached high carrier mobilities that led to the observation of the integer quantum Hall effect, the improvement in the sample quality of the 2D electron gas (2DEG) has however been only moderate; quantum Hall effect remained elusive. Here, we obtain high quality black phosphorus 2DEG by defining the 2DEG region with a prepatterned graphite local gate. The graphite local gate screens the impurity potential in the 2DEG. More importantly, it electrostatically defines the edge of the 2DEG, which facilitates the formation of well-defined edge channels in the quantum Hall regime. The improvements enable us to observe precisely quantized Hall plateaus in electron-doped black phosphorus FET. Magneto-transport measurements under high magnetic fields further revealed a large effective mass and an enhanced Landé g-factor, which points to strong electron-electron interaction in black phosphorus 2DEG. Such strong interaction may lead to exotic many-body quantum states in the fractional quantum Hall regime.

cond-mat.mes-hall↗

arXiv2017

Dynamical Anisotropic Response of Black Phosphorus under Magnetic Field

Black phosphorus (BP) has emerged as a promising material candidate for next generation electronic and optoelectronic devices due to its high mobility, tunable band gap and highly anisotropic properties. In this work, polarization resolved ultrafast mid-infrared transient reflection spectroscopy measurements are performed to study the dynamical anisotropic optical properties of BP under magnetic fields up to 9 T. The relaxation dynamics of photoexcited carrier is found to be insensitive to the applied magnetic field due to the broadening of the Landau levels and large effective mass of carriers. While the anisotropic optical response of BP decreases with increasing magnetic field, its enhancement due to the excitation of hot carriers is similar to that without magnetic field. These experimental results can be well interpreted by the magneto-optical conductivity of the Landau levels of BP thin film, based on an effective k*p Hamiltonian and linear response theory. These findings suggest attractive possibilities of multi-dimensional controls of anisotropic response (AR) of BP with light, electric and magnetic field, which further introduces BP to the fantastic magnetic field sensitive applications.

cond-mat.mtrl-sci↗

arXiv2017

Focusing RKKY interaction by graphene P-N junction

The carrier-mediated RKKY interaction between local spins plays an important role for the application of magnetically doped graphene in spintronics and quantum computation. Previous studies largely concentrate on the influence of electronic states of uniform systems on the RKKY interaction. Here we reveal a very different way to manipulate the RKKY interaction by showing that the anomalous focusing - a well-known electron optics phenomenon in graphene P-N junctions - can be utilized to refocus the massless Dirac electrons emanating from one local spin to the other local spin. This gives rise to rich spatial interference patterns and symmetry-protected non-oscillatory RKKY interaction with a strongly enhanced magnitude. It may provide a new way to engineer the long-range spin-spin interaction in graphene.

cond-mat.mes-hall↗

arXiv2017

Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators

We report on a class of quantum spin Hall insulators (QSHIs) in strained-layer InAs/GaInSb quantum wells, in which the bulk gaps are enhanced by up to five folds as compared to the binary InAs/GaSb QSHI. Remarkably, with consequently increasing edge velocity, the edge conductance at zero and applied magnetic fields manifests time reversal symmetry (TRS) -protected properties consistent with Z2 topological insulator. The InAs/GaInSb bilayers offer a much sought-after platform for future studies and applications of the QSHI.

cond-mat.mes-hall↗

arXiv2017

Coexistence of New Fermions in Topological Semimetal TaS

We theoretically propose that, the single crystal formed TaS is a new type of topological semimetal, hosting ring-shaped gapless nodal lines and triply degenerate points (TDPs) in the absence of spin-orbit coupling (SOC). In the presence of SOC, the each TDP splits into four TDPs along the high symmetric line in the momentum space, and one of the nodal ring remains closed due to the protection of the mirror reflection symmetry, while another nodal ring is fully gapped and transforms into six pairs ofWeyl points (WPs) carrying opposite chirality. The electronic structures of the projected surfaces are also discussed, the unique Fermi arcs are observed and the chirality remains or vanishes depending on the projection directions. On the (010) projected surface, one may observe a Lifshitz transition. The new type of topological semimetal TaS is stable and experimentally achievable, and the coexistence of topological nodal lines, WPs and TDPs states in TaS makes it a potential candidate to study the interplay between different types of topological fermions.

cond-mat.mes-hall↗

arXiv2017

Aharonov-Bohm effect in monolayer black phosphorus (phosphorene) nanorings

This work presents theoretical demonstration of Aharonov-Bohm (AB) effect in monolayer phosphorene nanorings (PNR). Atomistic quantum transport simulations of PNR are employed to investigate the impact of multiple modulation sources on the sample conductance. In presence of a perpendicular magnetic field, we find that the conductance of both armchair and zigzag PNR oscillate periodically in a low-energy window as a manifestation of the AB effect. Our numerical results have revealed a giant magnetoresistance (MR) in zigzag PNR (with a maximum magnitude approaching two thousand percent). It is attributed to the AB effect induced destructive interference phase in a wide energy range below the bottom of the second subband. We also demonstrate that PNR conductance is highly anisotropic, offering an additional way to modulate MR. The giant MR in PNR is maintained at room temperature in the presence of thermal broadening effect.

cond-mat.mes-hall↗

arXiv2017

Scars in Dirac fermion systems: the influence of an Aharonov--Bohm flux

Time-reversal ($\mathcal{T}$-) symmetry is fundamental to many physical processes. Typically, $\mathcal{T}$-breaking for microscopic processes requires the presence of magnetic field. However, for 2D massless Dirac billiards, $\mathcal{T}$-symmetry is broken automatically by the mass confinement, leading to chiral quantum scars. In this paper, we investigate the mechanism of $\mathcal{T}$-breaking by analyzing the local current of the scarring eigenstates and their magnetic response to an Aharonov--Bohm flux. Our results unveil the complete understanding of the subtle $\mathcal{T}$-breaking phenomena from both the semiclassical formula of chiral scars and the microscopic current and spin reflection at the boundaries, leading to a controlling scheme to change the chirality of the relativistic quantum scars. Our findings not only have significant implications on the transport behavior and spin textures of the relativistic pseudoparticles, but also add basic knowledge to relativistic quantum chaos.

quant-ph↗

arXiv2017

Fast multicolor photodetectors based on graphene-contacted p-GaSe/n-InSe van der Waals heterostructures

The integration of different two-dimensional materials within a multilayer van der Waals (vdW) heterostructure offers a promising technology for realizing high performance opto-electronic devices such as photodetectors and light sources1-3. Transition metal dichalcogenides, e.g. MoS2 and WSe2, have been employed as the optically-active layer in recently developed heterojunctions. However, MoS2 and WSe2 become direct band gap semiconductors only in mono- or bilayer form4,5. In contrast, the metal monochalcogenides InSe and GaSe retain a direct bandgap over a wide range of layer thicknesses from bulk crystals down to exfoliated flakes only a few atomic monolayers thick6,7. Here we report on vdW heterojunction diodes based on InSe and GaSe: the type II band alignment between the two materials and their distinctive spectral response, combined with the low electrical resistance of transparent graphene electrodes, enable effective separation and extraction of photoexcited carriers from the heterostructure even when no external voltage is applied. Our devices are fast (< 10 μs), self-driven photodetectors with multicolor photoresponse ranging from the ultraviolet to the near-infrared and have the potential to accelerate the exploitation of two-dimensional vdW crystals by creating new routes to miniaturized optoelectronics beyond present technologies.

physics.ins-det↗

arXiv2017

General Green's function formalism for layered systems: Wave function approach

The single-particle Green's function (GF) of mesoscopic structures plays a central role in mesoscopic quantum transport. The recursive GF technique is a standard tool to compute this quantity numerically, but it lacks physical transparency and is limited to relatively small systems. Here we present a numerically efficient and physically transparent GF formalism for a general layered structure. In contrast to the recursive GF that directly calculates the GF through the Dyson equations, our approach converts the calculation of the GF to the generation and subsequent propagation of a scattering wave function emanating from a local excitation. This viewpoint not only allows us to reproduce existing results in a concise and physically intuitive manner, but also provides analytical expressions of the GF in terms of a generalized scattering matrix. This identifies the contributions from each individual scattering channel to the GF and hence allows this information to be extracted quantitatively from dual-probe STM experiments. The simplicity and physical transparency of the formalism further allows us to treat the multiple reflection analytically and derive an analytical rule to construct the GF of a general layered system. This could significantly reduce the computational time and enable quantum transport calculations for large samples. We apply this formalism to perform both analytical analysis and numerical simulation for the two-dimensional conductance map of a realistic graphene p-n junction. The results demonstrate the possibility of observing the spatially-resolved interference pattern caused by negative refraction and further reveal a few interesting features, such as the distance-independent conductance and its quadratic dependence on the carrier concentration, as opposed to the linear dependence in uniform graphene.

cond-mat.mes-hall↗