arXiv subjects

Kai Ni

Publications and source records attributed to Kai Ni.

At least 37 records · Page 2Linked to original sources

arXiv2025

An In-Situ Spatial-Temporal Sequence Detector for Neuromorphic Vision Sensor Empowered by High Density Vertical NAND Storage

Neuromorphic vision sensors require efficient real-time pattern recognition, yet conventional architectures struggle with energy and latency constraints. Here, we present a novel in-situ spatiotemporal sequence detector that leverages vertical NAND storage to achieve massively parallel pattern detection. By encoding each cell with two single-transistor-based multi-level cell (MLC) memory elements, such as ferroelectric field-effect transistors (FeFETs), and mapping a pixel's temporal sequence onto consecutive word lines (WLs), we enable direct temporal pattern detection within NAND strings. Each NAND string serves as a dedicated reference for a single pixel, while different blocks store patterns for distinct pixels, allowing large-scale spatial-temporal pattern recognition via simple direct bit-line (BL) sensing, a well-established operation in vertical NAND storage. We experimentally validate our approach at both the cell and array levels, demonstrating that vertical NAND-based detector achieves more than six orders of magnitude improvement in energy efficiency and more than three orders of magnitude reduction in latency compared to conventional CPU-based methods. These findings establish vertical NAND storage as a scalable and energy-efficient solution for next-generation neuromorphic vision processing.

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arXiv2025

TAP-CAM: A Tunable Approximate Matching Engine based on Ferroelectric Content Addressable Memory

Pattern search is crucial in numerous analytic applications for retrieving data entries akin to the query. Content Addressable Memories (CAMs), an in-memory computing fabric, directly compare input queries with stored entries through embedded comparison logic, facilitating fast parallel pattern search in memory. While conventional CAM designs offer exact match functionality, they are inadequate for meeting the approximate search needs of emerging data-intensive applications. Some recent CAM designs propose approximate matching functions, but they face limitations such as excessively large cell area or the inability to precisely control the degree of approximation. In this paper, we propose TAP-CAM, a novel ferroelectric field effect transistor (FeFET) based ternary CAM (TCAM) capable of both exact and tunable approximate matching. TAP-CAM employs a compact 2FeFET-2R cell structure as the entry storage unit, and similarities in Hamming distances between input queries and stored entries are measured using an evaluation transistor associated with the matchline of CAM array. The operation, robustness and performance of the proposed design at array level have been discussed and evaluated, respectively. We conduct a case study of K-nearest neighbor (KNN) search to benchmark the proposed TAP-CAM at application level. Results demonstrate that compared to 16T CMOS CAM with exact match functionality, TAP-CAM achieves a 16.95x energy improvement, along with a 3.06% accuracy enhancement. Compared to 2FeFET TCAM with approximate match functionality, TAP-CAM achieves a 6.78x energy improvement.

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arXiv2025

TReCiM: Lower Power and Temperature-Resilient Multibit 2FeFET-1T Compute-in-Memory Design

Compute-in-memory (CiM) emerges as a promising solution to solve hardware challenges in artificial intelligence (AI) and the Internet of Things (IoT), particularly addressing the "memory wall" issue. By utilizing nonvolatile memory (NVM) devices in a crossbar structure, CiM efficiently accelerates multiply-accumulate (MAC) computations, the crucial operations in neural networks and other AI models. Among various NVM devices, Ferroelectric FET (FeFET) is particularly appealing for ultra-low-power CiM arrays due to its CMOS compatibility, voltage-driven write/read mechanisms and high ION/IOFF ratio. Moreover, subthreshold-operated FeFETs, which operate at scaling voltages in the subthreshold region, can further minimize the power consumption of CiM array. However, subthreshold-FeFETs are susceptible to temperature drift, resulting in computation accuracy degradation. Existing solutions exhibit weak temperature resilience at larger array size and only support 1-bit. In this paper, we propose TReCiM, an ultra-low-power temperature-resilient multibit 2FeFET-1T CiM design that reliably performs MAC operations in the subthreshold-FeFET region with temperature ranging from 0 to 85 degrees Celcius at scale. We benchmark our design using NeuroSim framework in the context of VGG-8 neural network architecture running the CIFAR-10 dataset. Benchmarking results suggest that when considering temperature drift impact, our proposed TReCiM array achieves 91.31% accuracy, with 1.86% accuracy improvement compared to existing 1-bit 2T-1FeFET CiM array. Furthermore, our proposed design achieves 48.03 TOPS/W energy efficiency at system level, comparable to existing designs with smaller technology feature sizes.

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arXiv2024

NVCiM-PT: An NVCiM-assisted Prompt Tuning Framework for Edge LLMs

Large Language Models (LLMs) deployed on edge devices, known as edge LLMs, need to continuously fine-tune their model parameters from user-generated data under limited resource constraints. However, most existing learning methods are not applicable for edge LLMs because of their reliance on high resources and low learning capacity. Prompt tuning (PT) has recently emerged as an effective fine-tuning method for edge LLMs by only modifying a small portion of LLM parameters, but it suffers from user domain shifts, resulting in repetitive training and losing resource efficiency. Conventional techniques to address domain shift issues often involve complex neural networks and sophisticated training, which are incompatible for PT for edge LLMs. Therefore, an open research question is how to address domain shift issues for edge LLMs with limited resources. In this paper, we propose a prompt tuning framework for edge LLMs, exploiting the benefits offered by non-volatile computing-in-memory (NVCiM) architectures. We introduce a novel NVCiM-assisted PT framework, where we narrow down the core operations to matrix-matrix multiplication, which can then be accelerated by performing in-situ computation on NVCiM. To the best of our knowledge, this is the first work employing NVCiM to improve the edge LLM PT performance.

cs.LG↗

arXiv2024

Energy Efficient Dual Designs of FeFET-Based Analog In-Memory Computing with Inherent Shift-Add Capability

In-memory computing (IMC) architecture emerges as a promising paradigm, improving the energy efficiency of multiply-and-accumulate (MAC) operations within DNNs by integrating the parallel computations within the memory arrays. Various high-precision analog IMC array designs have been developed based on both SRAM and emerging non-volatile memories. These designs perform MAC operations of partial input and weight, with the corresponding partial products then fed into shift-add circuitry to produce the final MAC results. However, existing works often present intricate shift-add process for weight. The traditional digital shift-add process is limited in throughput due to time-multiplexing of ADCs, and advancing the shift-add process to the analog domain necessitates customized circuit implementations, resulting in compromises in energy and area efficiency. Furthermore, the joint optimization of the partial MAC operations and the weight shift-add process is rarely explored. In this paper, we propose novel, energy efficient dual designs of FeFET based high precision analog IMC featuring inherent shift-add capability. We introduce a FeFET based IMC paradigm that performs partial MAC in each column, and inherently integrates the shift-add process for 4-bit weights by leveraging FeFET's analog storage characteristics. This paradigm supports both 2's complement mode and non-2's complement mode MAC, thereby offering flexible support for 4-/8-bit weight data in 2's complement format. Building upon this paradigm, we propose novel FeFET based dual designs, CurFe for the current mode and ChgFe for the charge mode, to accommodate the high precision analog domain IMC architecture.Evaluation results at circuit and system levels indicate that the circuit/system-level energy efficiency of the proposed FeFET-based analog IMC is 1.56$\times$/1.37$\times$ higher when compared to SOTA analog IMC designs.

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arXiv2024

FeBiM: Efficient and Compact Bayesian Inference Engine Empowered with Ferroelectric In-Memory Computing

In scenarios with limited training data or where explainability is crucial, conventional neural network-based machine learning models often face challenges. In contrast, Bayesian inference-based algorithms excel in providing interpretable predictions and reliable uncertainty estimation in these scenarios. While many state-of-the-art in-memory computing (IMC) architectures leverage emerging non-volatile memory (NVM) technologies to offer unparalleled computing capacity and energy efficiency for neural network workloads, their application in Bayesian inference is limited. This is because the core operations in Bayesian inference differ significantly from the multiplication-accumulation (MAC) operations common in neural networks, rendering them generally unsuitable for direct implementation in most existing IMC designs. In this paper, we propose FeBiM, an efficient and compact Bayesian inference engine powered by multi-bit ferroelectric field-effect transistor (FeFET)-based IMC. FeBiM effectively encodes the trained probabilities of a Bayesian inference model within a compact FeFET-based crossbar. It maps quantized logarithmic probabilities to discrete FeFET states. As a result, the accumulated outputs of the crossbar naturally represent the posterior probabilities, i.e., the Bayesian inference model's output given a set of observations. This approach enables efficient in-memory Bayesian inference without the need for additional calculation circuitry. As the first FeFET-based in-memory Bayesian inference engine, FeBiM achieves an impressive storage density of 26.32 Mb/mm$^{2}$ and a computing efficiency of 581.40 TOPS/W in a representative Bayesian classification task. These results demonstrate 10.7$\times$/43.4$\times$ improvement in compactness/efficiency compared to the state-of-the-art hardware implementation of Bayesian inference.

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arXiv2024

A Remedy to Compute-in-Memory with Dynamic Random Access Memory: 1FeFET-1C Technology for Neuro-Symbolic AI

Neuro-symbolic artificial intelligence (AI) excels at learning from noisy and generalized patterns, conducting logical inferences, and providing interpretable reasoning. Comprising a 'neuro' component for feature extraction and a 'symbolic' component for decision-making, neuro-symbolic AI has yet to fully benefit from efficient hardware accelerators. Additionally, current hardware struggles to accommodate applications requiring dynamic resource allocation between these two components. To address these challenges-and mitigate the typical data-transfer bottleneck of classical Von Neumann architectures-we propose a ferroelectric charge-domain compute-in-memory (CiM) array as the foundational processing element for neuro-symbolic AI. This array seamlessly handles both the critical multiply-accumulate (MAC) operations of the 'neuro' workload and the parallel associative search operations of the 'symbolic' workload. To enable this approach, we introduce an innovative 1FeFET-1C cell, combining a ferroelectric field-effect transistor (FeFET) with a capacitor. This design, overcomes the destructive sensing limitations of DRAM in CiM applications, while capable of capitalizing decades of DRAM expertise with a similar cell structure as DRAM, achieves high immunity against FeFET variation-crucial for neuro-symbolic AI-and demonstrates superior energy efficiency. The functionalities of our design have been successfully validated through SPICE simulations and prototype fabrication and testing. Our hardware platform has been benchmarked in executing typical neuro-symbolic AI reasoning tasks, showing over 2x improvement in latency and 1000x improvement in energy efficiency compared to GPU-based implementations.

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arXiv2024

HyCiM: A Hybrid Computing-in-Memory QUBO Solver for General Combinatorial Optimization Problems with Inequality Constraints

Computationally challenging combinatorial optimization problems (COPs) play a fundamental role in various applications. To tackle COPs, many Ising machines and Quadratic Unconstrained Binary Optimization (QUBO) solvers have been proposed, which typically involve direct transformation of COPs into Ising models or equivalent QUBO forms (D-QUBO). However, when addressing COPs with inequality constraints, this D-QUBO approach introduces numerous extra auxiliary variables, resulting in a substantially larger search space, increased hardware costs, and reduced solving efficiency. In this work, we propose HyCiM, a novel hybrid computing-in-memory (CiM) based QUBO solver framework, designed to overcome aforementioned challenges. The proposed framework consists of (i) an innovative transformation method (first to our known) that converts COPs with inequality constraints into an inequality-QUBO form, thus eliminating the need of expensive auxiliary variables and associated calculations; (ii) "inequality filter", a ferroelectric FET (FeFET)-based CiM circuit that accelerates the inequality evaluation, and filters out infeasible input configurations; (iii) %When feasible solutions are detected, a FeFET-based CiM annealer that is capable of approaching global solutions of COPs via iterative QUBO computations within a simulated annealing process. The evaluation results show that HyCiM drastically narrows down the search space, eliminating $2^{100} \text{ to } 2^{2536}$ infeasible input configurations compared to the conventional D-QUBO approach.

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arXiv2024

Energy-Efficient Cryogenic Ternary Content Addressable Memory using Ferroelectric SQUID

Ternary content addressable memories (TCAMs) are useful for certain computing tasks since they allow us to compare a search query with a whole dataset stored in the memory array. They can also unlock unique advantages for cryogenic applications like quantum computing, high-performance computing, and space exploration by improving speed and energy efficiency through parallel searching. This paper explores the design and implementation of a cryogenic ternary content addressable memory based on ferroelectric superconducting quantum interference devices (FeSQUIDs). The use of FeSQUID for designing the TCAM provides several unique advantages. First, we can get binary decisions (zero or non-zero voltage) for matching and mismatching conditions without using any peripheral circuitry. Moreover, the proposed TCAM needs ultra-low energy (1.36 aJ and 26.5 aJ average energy consumption for 1-bit binary and ternary search, respectively), thanks to the use of energy-efficient SQUIDs. Finally, we show the efficiency of FeSQUID through the brain-inspired application of Hyperdimensional Computing (HDC). Here, the FeSQUID-based TCAM implements the associative memory to support the highly parallel search needed in the inference step. We estimate an energy consumption of 89.4 fJ per vector comparison using a vector size of 10,000 bits. We also compare the FeSQUID-based TCAM array with the 5nm FinFET-based cryogenic SRAM-based TCAM array and observe that the proposed FeSQUID-based TCAM array consumes over one order of magnitude lower energy while performing the same task.

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arXiv2024

C-Nash: A Novel Ferroelectric Computing-in-Memory Architecture for Solving Mixed Strategy Nash Equilibrium

The concept of Nash equilibrium (NE), pivotal within game theory, has garnered widespread attention across numerous industries. Recent advancements introduced several quantum Nash solvers aimed at identifying pure strategy NE solutions (i.e., binary solutions) by integrating slack terms into the objective function, commonly referred to as slack-quadratic unconstrained binary optimization (S-QUBO). However, incorporation of slack terms into the quadratic optimization results in changes of the objective function, which may cause incorrect solutions. Furthermore, these quantum solvers only identify a limited subset of pure strategy NE solutions, and fail to address mixed strategy NE (i.e., decimal solutions), leaving many solutions undiscovered. In this work, we propose C-Nash, a novel ferroelectric computing-in-memory (CiM) architecture that can efficiently handle both pure and mixed strategy NE solutions. The proposed architecture consists of (i) a transformation method that converts quadratic optimization into a MAX-QUBO form without introducing additional slack variables, thereby avoiding objective function changes; (ii) a ferroelectric FET (FeFET) based bi-crossbar structure for storing payoff matrices and accelerating the core vector-matrix-vector (VMV) multiplications of QUBO form; (iii) A winner-takes-all (WTA) tree implementing the MAX form and a two-phase based simulated annealing (SA) logic for searching NE solutions. Evaluations show that C-Nash has up to 68.6% increase in the success rate for identifying NE solutions, finding all pure and mixed NE solutions rather than only a portion of pure NE solutions, compared to D-Wave based quantum approaches. Moreover, C-Nash boasts a reduction up to 157.9X/79.0X in time-to-solutions compared to D-Wave 2000 Q6 and D-Wave Advantage 4.1, respectively.

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arXiv2024

DynamicTrack: Advancing Gigapixel Tracking in Crowded Scenes

Tracking in gigapixel scenarios holds numerous potential applications in video surveillance and pedestrian analysis. Existing algorithms attempt to perform tracking in crowded scenes by utilizing multiple cameras or group relationships. However, their performance significantly degrades when confronted with complex interaction and occlusion inherent in gigapixel images. In this paper, we introduce DynamicTrack, a dynamic tracking framework designed to address gigapixel tracking challenges in crowded scenes. In particular, we propose a dynamic detector that utilizes contrastive learning to jointly detect the head and body of pedestrians. Building upon this, we design a dynamic association algorithm that effectively utilizes head and body information for matching purposes. Extensive experiments show that our tracker achieves state-of-the-art performance on widely used tracking benchmarks specifically designed for gigapixel crowded scenes.

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arXiv2024

Robust Implementation of Retrieval-Augmented Generation on Edge-based Computing-in-Memory Architectures

Large Language Models (LLMs) deployed on edge devices learn through fine-tuning and updating a certain portion of their parameters. Although such learning methods can be optimized to reduce resource utilization, the overall required resources remain a heavy burden on edge devices. Instead, Retrieval-Augmented Generation (RAG), a resource-efficient LLM learning method, can improve the quality of the LLM-generated content without updating model parameters. However, the RAG-based LLM may involve repetitive searches on the profile data in every user-LLM interaction. This search can lead to significant latency along with the accumulation of user data. Conventional efforts to decrease latency result in restricting the size of saved user data, thus reducing the scalability of RAG as user data continuously grows. It remains an open question: how to free RAG from the constraints of latency and scalability on edge devices? In this paper, we propose a novel framework to accelerate RAG via Computing-in-Memory (CiM) architectures. It accelerates matrix multiplications by performing in-situ computation inside the memory while avoiding the expensive data transfer between the computing unit and memory. Our framework, Robust CiM-backed RAG (RoCR), utilizing a novel contrastive learning-based training method and noise-aware training, can enable RAG to efficiently search profile data with CiM. To the best of our knowledge, this is the first work utilizing CiM to accelerate RAG.

cs.LG↗

arXiv2024

Variation-Resilient FeFET-Based In-Memory Computing Leveraging Probabilistic Deep Learning

Reliability issues stemming from device level non-idealities of non-volatile emerging technologies like ferroelectric field-effect transistors (FeFET), especially at scaled dimensions, cause substantial degradation in the accuracy of In-Memory crossbar-based AI systems. In this work, we present a variation-aware design technique to characterize the device level variations and to mitigate their impact on hardware accuracy employing a Bayesian Neural Network (BNN) approach. An effective conductance variation model is derived from the experimental measurements of cycle-to-cycle (C2C) and device-to-device (D2D) variations performed on FeFET devices fabricated using 28 nm high-$k$ metal gate technology. The variations were found to be a function of different conductance states within the given programming range, which sharply contrasts earlier efforts where a fixed variation dispersion was considered for all conductance values. Such variation characteristics formulated for three different device sizes at different read voltages were provided as prior variation information to the BNN to yield a more exact and reliable inference. Near-ideal accuracy for shallow networks (MLP5 and LeNet models) on the MNIST dataset and limited accuracy decline by $\sim$3.8-16.1% for deeper AlexNet models on CIFAR10 dataset under a wide range of variations corresponding to different device sizes and read voltages, demonstrates the efficacy of our proposed device-algorithm co-design technique.

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arXiv2024

Paving the Way for Pass Disturb Free Vertical NAND Storage via A Dedicated and String-Compatible Pass Gate

In this work, we propose a dual-port cell design to address the pass disturb in vertical NAND storage, which can pass signals through a dedicated and string-compatible pass gate. We demonstrate that: i) the pass disturb-free feature originates from weakening of the depolarization field by the pass bias at the high-${V}_{TH}$ (HVT) state and the screening of the applied field by channel at the low-${V}_{TH}$ (LVT) state; ii) combined simulations and experimental demonstrations of dual-port design verify the disturb-free operation in a NAND string, overcoming a key challenge in single-port designs; iii) the proposed design can be incorporated in a highly scaled vertical NAND FeFET string and the pass gate can be incorporated into the existing 3D NAND with the negligible overhead of the pass gate interconnection through a global bottom pass gate contact in the substrate.

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arXiv2024

Low Power and Temperature-Resilient Compute-In-Memory Based on Subthreshold-FeFET

Compute-in-memory (CiM) is a promising solution for addressing the challenges of artificial intelligence (AI) and the Internet of Things (IoT) hardware such as 'memory wall' issue. Specifically, CiM employing nonvolatile memory (NVM) devices in a crossbar structure can efficiently accelerate multiply-accumulation (MAC) computation, a crucial operator in neural networks among various AI models. Low power CiM designs are thus highly desired for further energy efficiency optimization on AI models. Ferroelectric FET (FeFET), an emerging device, is attractive for building ultra-low power CiM array due to CMOS compatibility, high ION/IOFF ratio, etc. Recent studies have explored FeFET based CiM designs that achieve low power consumption. Nevertheless, subthreshold-operated FeFETs, where the operating voltages are scaled down to the subthreshold region to reduce array power consumption, are particularly vulnerable to temperature drift, leading to accuracy degradation. To address this challenge, we propose a temperature-resilient 2T-1FeFET CiM design that performs MAC operations reliably at subthreahold region from 0 to 85 Celsius, while consuming ultra-low power. Benchmarked against the VGG neural network architecture running the CIFAR-10 dataset, the proposed 2T-1FeFET CiM design achieves 89.45% CIFAR-10 test accuracy. Compared to previous FeFET based CiM designs, it exhibits immunity to temperature drift at an 8-bit wordlength scale, and achieves better energy efficiency with 2866 TOPS/W.

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arXiv2023

Reconfigurable Frequency Multipliers Based on Complementary Ferroelectric Transistors

Frequency multipliers, a class of essential electronic components, play a pivotal role in contemporary signal processing and communication systems. They serve as crucial building blocks for generating high-frequency signals by multiplying the frequency of an input signal. However, traditional frequency multipliers that rely on nonlinear devices often require energy- and area-consuming filtering and amplification circuits, and emerging designs based on an ambipolar ferroelectric transistor require costly non-trivial characteristic tuning or complex technology process. In this paper, we show that a pair of standard ferroelectric field effect transistors (FeFETs) can be used to build compact frequency multipliers without aforementioned technology issues. By leveraging the tunable parabolic shape of the 2FeFET structures' transfer characteristics, we propose four reconfigurable frequency multipliers, which can switch between signal transmission and frequency doubling. Furthermore, based on the 2FeFET structures, we propose four frequency multipliers that realize triple, quadruple frequency modes, elucidating a scalable methodology to generate more multiplication harmonics of the input frequency. Performance metrics such as maximum operating frequency, power, etc., are evaluated and compared with existing works. We also implement a practical case of frequency modulation scheme based on the proposed reconfigurable multipliers without additional devices. Our work provides a novel path of scalable and reconfigurable frequency multiplier designs based on devices that have characteristics similar to FeFETs, and show that FeFETs are a promising candidate for signal processing and communication systems in terms of maximum operating frequency and power.

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arXiv2023

SEE-MCAM: Scalable Multi-bit FeFET Content Addressable Memories for Energy Efficient Associative Search

In this work, we propose SEE-MCAM, scalable and compact multi-bit CAM (MCAM) designs that utilize the three-terminal ferroelectric FET (FeFET) as the proxy. By exploiting the multi-level-cell characteristics of FeFETs, our proposed SEE-MCAM designs enable multi-bit associative search functions and achieve better energy efficiency and performance than existing FeFET-based CAM designs. We validated the functionality of our proposed designs by achieving 3 bits per cell CAM functionality, resulting in 3x improvement in storage density. The area per bit of the proposed SEE-MCAM cell is 8% of the conventional CMOS CAM. We thoroughly investigated the scalability and robustness of the proposed design. Evaluation results suggest that the proposed 2FeFET-1T SEE-MCAM achieves 9.8x more energy efficiency and 1.6x less search latency compared to the CMOS CAM, respectively. When compared to existing MCAM designs, the proposed SEE-MCAM can achieve 8.7x and 4.9x more energy efficiency than ReRAM-based and FeFET-based MCAMs, respectively. Benchmarking results show that our approach provides up to 3 orders of magnitude improvement in speedup and energy efficiency over a GPU implementation in accelerating a novel quantized hyperdimensional computing (HDC) application.

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arXiv2023

A Ferroelectric Compute-in-Memory Annealer for Combinatorial Optimization Problems

Computationally hard combinatorial optimization problems (COPs) are ubiquitous in many applications, including logistical planning, resource allocation, chip design, drug explorations, and more. Due to their critical significance and the inability of conventional hardware in efficiently handling scaled COPs, there is a growing interest in developing computing hardware tailored specifically for COPs, including digital annealers, dynamical Ising machines, and quantum/photonic systems. However, significant hurdles still remain, such as the memory access issue, the system scalability and restricted applicability to certain types of COPs, and VLSI-incompatibility, respectively. Here, a ferroelectric field effect transistor (FeFET) based compute-in-memory (CiM) annealer is proposed. After converting COPs into quadratic unconstrained binary optimization (QUBO) formulations, a hardware-algorithm co-design is conducted, yielding an energy-efficient, versatile, and scalable hardware for COPs. To accelerate the core vector-matrix-vector (VMV) multiplication of QUBO formulations, a FeFET based CiM array is exploited, which can accelerate the intended operation in-situ due to its unique three-terminal structure. In particular, a lossless compression technique is proposed to prune typically sparse QUBO matrix to reduce hardware cost. Furthermore, a multi-epoch simulated annealing (MESA) algorithm is proposed to replace conventional simulated annealing for its faster convergence and better solution quality. The effectiveness of the proposed techniques is validated through the utilization of developed chip prototypes for successfully solving graph coloring problem, indicating great promise of FeFET CiM annealer in solving general COPs.

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