arXiv subjects

Kaihui Liu

Publications and source records attributed to Kaihui Liu.

At least 55 records · Page 3Linked to original sources

arXiv2022

Orbit-transfer torque driven field-free switching of perpendicular magnetization

The reversal of perpendicular magnetization (PM) by electric control is crucial for high-density integration of low-power magnetic random-access memory (MRAM). Although the spin-transfer torque (STT) and spin-orbit torque (SOT) technologies have been used to switch the magnetization of a free layer with perpendicular magnetic anisotropy, the former has limited endurance because of the high current density directly through the junction, while the latter requires an external magnetic field or unconventional configuration to break the symmetry. Here we propose and realize the orbit-transfer torque (OTT), that is, exerting torque on the magnetization using the orbital magnetic moments, and thus demonstrate a new strategy for current-driven PM reversal without external magnetic field. The perpendicular polarization of orbital magnetic moments is generated by a direct current in a few-layer WTe2 due to the existence of nonzero Berry curvature dipole, and the polarization direction can be switched by changing the current polarity. Guided by this principle, we construct the WTe2/Fe3GeTe2 heterostructures, where the OTT driven field-free deterministic switching of PM is achieved.

cond-mat.mtrl-sci↗

arXiv2021

Tunable mid-infrared hyperbolic van der Waals metasurfaces by strong plasmon-phonon polaritons coupling

Hyperbolic metasurfaces based on van der Waals (vdW) materials support propagation of extremely anisotropic polaritons towards nanoscale light compression and manipulation, and thus has great potential in the applications of planar hyperlens, nanolasing, quantum optics and ultrasensitive infrared spectroscopy. Two-dimensional hexagonal boron nitride (h-BN) as a vdW metasurface can manipulate the propagation of hyperbolic polaritons at the level of single atomic layers, possessing higher degree of field confinement and lower losses than the conventional media. However, active manipulation of hyperbolic polaritonic waves in h-BN midinfrared metasurfaces remains elusive. Herein, we provide an effective strategy for constructing tunable mid-infrared hyperbolic vdW metasurfaces (HMSs). They are composed of meta-atoms that are the in-plane heterostructures of thin-layer h-BN and monolayer graphene strips (iHBNG). The strong coupling of h-BN phonons and graphene plasmons enables the large tunability of light fields by tailoring chemical potentials of graphene without frequency shift, which involves topological transitions of polaritonic modes, unidirectional polariton propagation and local-density-of-state enhancement. Simulated visual near-field distributions of iHBNG metasurfaces reveal the unique transformations of hyperbolic polariton propagations, distinguished from that of individual h-BN and graphene metasurfaces. Our findings provide a platform of optical nanomanipulation towards emerging on-chip polaritonic devices.

physics.optics↗

arXiv2021

Strain-dependent resistance and giant gauge factor in monolayer WSe2

We report the strong dependence of resistance on uniaxial strain in monolayer WSe2 at various temperatures, where the gauge factor can reach as large as 2400. The observation of strain-dependent resistance and giant gauge factor is attributed to the emergence of nonzero Berry curvature dipole. Upon increasing strain, Berry curvature dipole can generate net orbital magnetization, which would introduce additional magnetic scattering, decreasing the mobility and thus conductivity. Our work demonstrates the strain engineering of Berry curvature and thus the transport properties, making monolayer WSe2 potential for the application in the high-performance flexible and transparent electronics.

cond-mat.mes-hall↗

arXiv2021

Measuring phonon dispersion at an interface

The breakdown of translational symmetry at heterointerfaces leads to the emergence of new phonon modes localized near the interface. These interface phonons play an essential role in thermal/electrical transport properties in devices especially in miniature ones wherein the interface may dominate the entire response of the device. Knowledge of phonon dispersion at interfaces is therefore highly desirable for device design and optimization. Although theoretical work has begun decades ago, experimental research is totally absent due to challenges in achieving combined spatial, momentum and spectral resolutions required to probe localized phonon modes. Here we use electron energy loss spectroscopy in an electron microscope to directly measure both the local phonon density of states and the interface phonon dispersion relation for an epitaxial cBN-diamond heterointerface. In addition to bulk phonon modes, we observe acoustic and optical phonon modes localized at the interface, and modes isolated away from the interface. These features only appear within ~ 1 nm around the interface. The experimental results can be nicely reproduced by ab initio calculations. Our findings provide insights into lattice dynamics at heterointerfaces and should be practically useful in thermal/electrical engineering.

cond-mat.mtrl-sci↗

arXiv2021

Engineering of Atomic-Scale Flexoelectricity at Grain Boundaries

Flexoelectricity is a type of ubiquitous and prominent electromechanical coupling, pertaining to the response of electrical polarization to mechanical strain gradients while not restricted to the symmetry of materials. However, large elastic deformation in most solids is usually difficult to achieve and the strain gradient at minuscule is challenging to control. Here we exploit the exotic structural inhomogeneity of grain boundary to achieve a huge strain gradient (~ 1.2 nm-1) within 3 ~ 4 unit-cells, and thus obtain atomic-scale flexoelectric polarization up to ~ 38 μC/cm2 at a 24 LaAlO3 grain boundary. The nanoscale flexoelectricity also modifies the electrical activity of grain boundaries. Moreover, we prove that it is a general and feasible way to form large strain gradients at atomic scale by altering the misorientation angles of grain boundaries in different dielectric materials. Thus, engineering of grain boundaries provides an effective pathway to achieve tunable flexoelectricity and broadens the electromechanical functionalities of non-piezoelectric materials.

cond-mat.mtrl-sci↗

arXiv2021

Dynamics of Polar Skyrmion Bubbles under Electric Fields

Room-temperature polar skyrmion bubbles that are recently found in oxide superlattice, have received enormous interests for their potential applications in nanoelectronics due to the nanometer size, emergent chirality, and negative capacitance. For practical applications, the ability to controllably manipulate them by using external stimuli is prerequisite. Here, we study the dynamics of individual polar skyrmion bubbles at the nanoscale by using in situ biasing in a scanning transmission electron microscope. The reversible electric field-driven phase transition between topological and trivial polar states are demonstrated. We create, erase and monitor the shrinkage and expansion of individual polar skyrmions. We find that their transition behaviors are substantially different from that of magnetic analogue. The underlying mechanism is discussed by combing with the phase-field simulations. The controllable manipulation of nanoscale polar skyrmions allows us to tune the dielectric permittivity at atomic scale and detailed knowledge of their phase transition behaviors provides fundamentals for their applications in nanoelectronics.

cond-mat.mes-hall↗

arXiv2021

Strain Tunable Berry Curvature Dipole, Orbital Magnetization and Nonlinear Hall Effect in WSe2 Monolayer

The electronic topology is generally related to the Berry curvature, which can induce the anomalous Hall effect in time-reversal symmetry breaking systems. Intrinsic monolayer transition metal dichalcogenides possesses two nonequivalent K and K' valleys, having Berry curvatures with opposite signs, and thus vanishing anomalous Hall effect in this system. Here we report the experimental realization of asymmetrical distribution of Berry curvature in a single valley in monolayer WSe2 through applying uniaxial strain to break C3v symmetry. As a result, although the Berry curvature itself is still opposite in K and K' valleys, the two valleys would contribute equally to nonzero Berry curvature dipole. Upon applying electric field, the emergent Berry curvature dipole would lead to an out-of-plane orbital magnetization, which further induces an anomalous Hall effect with a linear response to E^2, known as nonlinear Hall effect. We show the strain modulated transport properties of nonlinear Hall effect in monolayer WSe2 with moderate hole-doping by gating. The second-harmonic Hall signals show quadratic dependence on electric field, and the corresponding orbital magnetization per current density can reach as large as 60. In contrast to the conventional Rashba-Edelstein effect with in-plane spin polarization, such current-induced orbital magnetization is along the out-of-plane direction, thus promising for high-efficient electrical switching of perpendicular magnetization.

cond-mat.mes-hall↗

arXiv2021

Atomic-scale imaging of CH3NH3PbI3 structure and its decomposition pathway

Understanding the atomic structure and structural instability of organic-inorganic hybrid perovskites is the key to appreciate their remarkable photoelectric properties and failure mechanism. Here, using low-dose imaging technique by direct-detection electron-counting camera in transmission electron microscope, we investigate the atomic structure and decomposition pathway of CH3NH3PbI3 (MAPbI3) at the atomic scale. We successfully image the atomic structure of perovskite in real space under ultra-low electron dose condition, and observe a two-step decomposition process, i.e. initial loss of MA followed by the collapse of perovskite structure into 6H-PbI2 with their critical threshold dose also determined. Interestingly, an intermediate phase (MA0.5PbI3) with locally ordered vacancies can robustly exist before perovskite collapses, enlightening strategies for prevention and recovery of perovskite structure during degradation. Associated with structure evolution, the bandgap gradually increases from ~1.6 eV to ~2.1 eV, and it is found that both C-N and N-H bonds can be destroyed under irradiation, releasing NH3 and leaving hydrocarbons. These findings enhance our understanding of the photoelectric properties and failure mechanism of MAPbI3, providing potential strategy into material optimization.

physics.app-ph↗

arXiv2021

Manipulation of polar vortex chirality in oxide superlattices

Topological polar vortices that are the electric analogues of magnetic objects, present great potential in applications of future nanoelectronics due to their nanometer size, anomalous dielectric response, and chirality. To enable the functionalities, it is prerequisite to manipulate the polar states and chirality by using external stimuli. Here, we probe the evolutions of polar state and chirality of polar vortices in PbTiO3/SrTiO3 superlattices under electric field by using atomically resolved in situ scanning transmission electron microscopy and phase-field simulations. We find that the adjacent clockwise and counterclockwise vortex usually have opposite chirality. The phase-field simulations suggest that the rotation reversal or axial polarization switching can lead to the chirality change. Guided by which, we experimentally validate that the vortex rotation direction can be changed by applying and subsequently removing of electric fields, offering a potential strategy to manipulate the vortex chirality. The revealed details of dynamic behavior for individual polar vortices at atomic scale and the proposed strategy for chirality manipulation provide fundamentals for future device applications.

cond-mat.mtrl-sci↗

arXiv2020

Broad-Spectral-Range Sustainability and Controllable Excitation of Hyperbolic Phonon Polaritons in $α$-MoO3

Hyperbolic phonon polaritons (HPhPs) in orthorhombic-phase molybdenum trioxide ($α$-MoO3) show in-plane hyperbolicity, great wavelength compression and ultra-long lifetime, therefore holding great potential in nanophotonic applications. However, its polaritonic response in the far-infrared (FIR) range has long remained unexplored due to challenges in experimental characterization. Here, using monochromated electron energy loss spectroscopy (EELS) in a scanning transmission electron microscope (STEM), we probe HPhPs in $α$-MoO3 in both mid-infrared (MIR) and FIR frequencies and correlate their behaviors with microstructures and orientations. We find that low-structural symmetry leads to various phonon modes and multiple Reststrahlen bands (RBs) over a broad spectral range (over 70 meV) and in different directions (55-63 meV and 119-125 meV along b axis, 68-106 meV along c axis, 101-121 meV along a axis). These HPhPs can be selectively excited by controlling the direction of swift electrons. These findings provide new opportunities in nanophotonic and optoelectronic applications such as directed light propagation, hyperlenses and heat transfer.

cond-mat.mtrl-sci↗

arXiv2020

Direct-Current Generator Based on Dynamic Water-Semiconductor Junction with Polarized Water as Moving Dielectric Medium

There is a rising prospective in harvesting energy from water droplets, as microscale energy is required for the distributed sensors in the interconnected human society. However, achieving a sustainable direct-current generating device from water flow is rarely reported, and the quantum polarization principle of the water molecular remains uncovered. Herein, we propose a dynamic water-semiconductor junction with moving water sandwiched between two semiconductors as a moving dielectric medium, which outputs a sustainable direct-current voltage of 0.3 V and current of 0.64 uA with low internal resistance of 390 kilohm. The sustainable direct-current electricity is originating from the dynamic water polarization process in water-semiconductor junction, in which water molecules are continuously polarized and depolarized driven by the mechanical force and Fermi level difference, during the movement of the water on silicon. We further demonstrated an encapsulated portable power-generating device with simple structure and continuous direct-current voltage, which exhibits its promising potential application in the field of wearable electronic generators.

physics.app-ph↗

arXiv2020

Creating topological polar structure in a nonpolar matter

Nontrivial topological structures offer rich playground in condensed matter physics including fluid dynamics, superconductivity, and ferromagnetism, and they promise alternative device configurations for post-Moore spintronics and electronics. Indeed, magnetic skyrmions are actively pursued for high-density data storage, while polar vortices with exotic negative capacitance may enable ultralow power consumption in microelectronics. Following extensive investigations on a variety of magnetic textures including vortices, domain walls and skyrmions in the past decades, studies on polar topologies have taken off in recent years, resulting in discoveries of closure domains, vortices, and skyrmions in ferroelectric materials. Nevertheless, the atomic-scale creation of topological polar structures is largely confined in a single ferroelectric system, PbTiO3 (PTO) with large polarization, casting doubt on the generality of polar topologies and limiting their potential applications. In this work, we successfully create previously unrealized atomic-scale polar antivortices in the nominally nonpolar SrTiO3 (STO), expanding the reaches of topological structures and completing an important missing link in polar topologies. The work shed considerable new insight into the formation of topological polar structures, and offers guidance in searching for new polar textures.

cond-mat.mtrl-sci↗

arXiv2020

Unravelling a Zigzag Pathway for Hot-Carrier Collection at CH3NH3PbI3/Graphene Interfaces

The capture of photoexcited deep-band hot carriers, excited by photons with energies far above the bandgap, is of significant importance for photovoltaic and photoelectronic applications since it is directly related to the quantum efficiency of photon-to-electron conversion. By employing time-resolved photoluminescence and state-of-the-art time-domain density functional theory, we reveal that photoexcited hot carriers in organic-inorganic hybrid perovskites prefer a zigzag interfacial charge-transfer pathway, i.e., the hot carriers transfer back and forth between CH3NH3PbI3 and graphene, before they reach a charge separated state. Driven by quantum coherence and interlayer vibrational modes, this pathway at the semiconductor-graphene interface takes about 400 femtoseconds, much faster than the relaxation process within CH3NH3PbI3 (in several picoseconds). We further demonstrate that the transfer rate of the pathway can be further enhanced by interfacial defects. Our work provides a new insight for the fundamental understanding and precise manipulation of hot-carrier dynamics at the complex semiconductor-graphene interfaces, paving the way for highly efficient photovoltaic and photoelectric device optimization.

cond-mat.mtrl-sci↗

arXiv2020

DC electricity generation from dynamic polarized water-semiconductor interface

Liquid electricity generator and hydrovoltaic technology have received numerous attentions, which can be divided into horizontal movement generator and vertical movement generator. The horizontal movement generator is limited for powering the integrated and miniaturized energy chip as the current output direction is depending on the moving direction of the water droplet, which means a sustainable and continuous direct-current (DC) electricity output can be hardly achieved because of the film of limited length. On the other hand, the existing vertical movement generators include triboelectricity or humidity gradient-based liquid electricity generator, where the liquid or water resource must be sustainably supplied to ensure continuous current output. Herein, we have designed an integratable vertical generator by sandwiching water droplets with semiconductor and metal, such as graphene or aluminum. This generator, named as polarized liquid molecular generator (PLMG), directly converts the lateral kinetic energy of water droplet into vertical DC electricity with an output voltage of up to ~1.0 V from the dynamic water-semiconductor interface. The fundamental discovery of PLMG is related to the non-symmetric structure of liquid molecules, such as water and alcohols, which can be polarized under the guidance of built-in field caused by the Fermi level difference between metal and semiconductor, while the symmetric liquid molecules cannot produce any electricity on the opposite. Integratable PLMG with a large output power of ~90 nW and voltage of ~2.7 V has been demonstrated, meanwhile its small internal resistance of ~250 kilohm takes a huge advantage in resistance matching with the impedance of electron components. The PLMG shows potential application value in the Internet of Things (IoTs) after proper miniaturization and integration.

physics.app-ph↗

arXiv2020

Electrical probing of COVID-19 spike protein receptor binding domain via a graphene field-effect transistor

Here, in an effort towards facile and fast screening/diagnosis of novel coronavirus disease 2019 (COVID-19), we combined the unprecedently sensitive graphene field-effect transistor (Gr-FET) with highly selective antibody-antigen interaction to develop a coronavirus immunosensor. The Gr-FET immunosensors can rapidly identify (about 2 mins) and accurately capture the COVID-19 spike protein S1 (which contains a receptor binding domain, RBD) at a limit of detection down to 0.2 pM, in a real-time and label-free manner. Further results ensure that the Gr-FET immunosensors can be promisingly applied to screen for high-affinity antibodies (with binding constant up to 2*10^11 M^-1 against the RBD) at concentrations down to 0.1 pM. Thus, our developed electrical Gr-FET immunosensors provide an appealing alternative to address the early screening/diagnosis as well as the analysis and rational design of neutralizing-antibody locking methods of this ongoing public health crisis.

physics.app-ph↗

arXiv2019

Atomic-scale observations of electrical and mechanical manipulation of topological polar flux-closure

The ability to controllably manipulate the complex topological polar configurations, such as polar flux-closure via external stimuli, enables many applications in electromechanical devices and nanoelectronics including high-density information storage. Here, by using the atomically resolved in situ scanning transmission electron microscopy, we find that a polar flux-closure structure in PbTiO3/SrTiO3 superlattices films can be reversibly switched to ordinary mono ferroelectric c domain or a domain under electric field or stress. Specifically, the electric field initially drives the flux-closure move and breaks them to form intermediate a/c striped domains, while the mechanical stress firstly starts to squeeze the flux-closures to convert into small vortices at the interface and form a continues dipole wave. After the removal of the external stimuli, the flux-closure structure spontaneously returns. Our atomic study provides valuable insights into understanding the lattice-charge interactions and the competing interactions balance in these complex topological structures. Such reversible switching between the flux-closure and ordinary ferroelectric domains also provides the foundation for applications such as memories and sensors.

cond-mat.mtrl-sci↗

arXiv2019

Correlating the Electronic Structures of Metallic/Semiconductor MoTe2 Interface to its Atomic Structures

Contact interface properties are important in determining the performances of devices based on atomically thin two-dimensional (2D) materials, especially those with short channels. Understanding the contact interface is therefore quite important to design better devices. Herein, we use scanning transmission electron microscopy, electron energy loss spectroscopy, and first-principles calculations to reveal the electronic structures within the metallic (1T')-semiconducting (2H) MoTe2 coplanar phase boundary across a wide spectral range and correlate its properties and atomic structure. We find that the 2H-MoTe2 excitonic peaks cross the phase boundary into the 1T' phase within a range of approximately 150 nm. The 1T'-MoTe2 crystal field can penetrate the boundary and extend into the 2H phase by approximately two unit cells. The plasmonic oscillations exhibit strong angle dependence, i.e., a red-shift (approximately 0.3 eV-1.2 eV) occurs within 4 nm at 1T'/2H-MoTe2 boundaries with large tilt angles, but there is no shift at zero-tilted boundaries. These atomic-scale measurements reveal the structure-property relationships of 1T'/2H-MoTe2 boundary, providing useful information for phase boundary engineering and device development based on 2D materials.

cond-mat.mtrl-sci↗

arXiv2019

Atomic Origin of Spin-Valve Magnetoresistance at the SrRuO3 Grain Boundary

Defects ubiquitously exist in crystal materials and usually exhibit a very different nature than the bulk matrix, and hence, their presence can have significant impacts on the properties of devices. Although it is well accepted that the properties of defects are determined by their unique atomic environments, the precise knowledge of such relationships is far from clear for most oxides due to the complexity of defects and difficulties in characterization. Here, we fabricate a 36.8° SrRuO3 grain boundary of which the transport measurements show a spin-valve magnetoresistance. We identify its atomic arrangement, including oxygen, using scanning transmission electron microscopy and spectroscopy. Based on the as-obtained atomic structure, the density functional theory calculations suggest that the spin-valve magnetoresistance is because of the dramatically reduced magnetic moments at the boundary. The ability to manipulate magnetic properties at the nanometer scale via defect control allows new strategies to design magnetic/electronic devices with low-dimensional magnetic order.

cond-mat.mtrl-sci↗