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Kang L. Wang

Publications and source records attributed to Kang L. Wang.

At least 55 records · Page 3Linked to original sources
arXiv2022

Exchange-biased quantum anomalous Hall effect

The quantum anomalous Hall (QAH) effect is characterized by a dissipationless chiral edge state with a quantized Hall resistance at zero magnetic field. Manipulating the QAH state is of great importance in both the understanding of topological quantum physics and the implementation of dissipationless electronics. Here, we realized the QAH effect in the magnetic topological insulator Cr-doped (Bi,Sb)2Te3 (CBST) grown on an uncompensated antiferromagnetic insulator Al-doped Cr2O3. Through polarized neutron reflectometry (PNR), we find a strong exchange coupling between CBST and Al-Cr2O3 surface spins fixing interfacial magnetic moments perpendicular to the film plane. The interfacial coupling results in an exchange-biased QAH effect. We further demonstrate that the magnitude and sign of the exchange bias can be effectively controlled using a field training process to set the magnetization of the Al-Cr2O3 layer. Our work demonstrates the use of the exchange bias effect to effectively manipulate the QAH state, opening new possibilities in QAH-based spintronics.

cond-mat.mes-hall↗
arXiv2022

Quantum Control of Spin Qubits Using Nanomagnets

Single-qubit gates are essential components of a universal quantum computer. Without selective addressing of individual qubits, scalable implementation of quantum algorithms is not possible. When the qubits are discrete points or regions on a lattice, the selective addressing of magnetic spin qubits at the nanoscale remains a challenge due to the difficulty of localizing and confining a classical divergence-free field to a small volume of space. Herein we propose a new technique for addressing spin qubits using voltage-control of nanoscale magnetism, exemplified by the use of voltage control of magnetic anisotropy (VCMA). We show that by tuning the frequency of the nanomagnet's electric field drive to the Larmor frequency of the spins confined to a nanoscale volume, and by modulating the phase of the drive, single-qubit quantum gates with fidelities approaching those for fault-tolerant quantum computing can be implemented. Such single-qubit gate operations have the advantage of remarkable energy efficiency, requiring only tens of femto-Joules per gate operation, and lossless, purely magnetic field control (no E-field over the target volume). Their physical realization is also straightforward using existing foundry manufacturing techniques.

cond-mat.mes-hall↗
arXiv2022

A van der Waals Interface Hosting Two Groups of Magnetic Skyrmions

Multiple magnetic skyrmion phases add an additional degree of freedom for skyrmion based ultrahigh-density spin memory devices. Extending the field to two-dimensional van der Waals magnets is a rewarding challenge, where the realizable degree of freedoms (e.g. thickness, twisting angle and electrical gating) and high skyrmion density result in intriguing new properties and enhanced functionality. We report a van der Waals interface, formed by two 2D ferromagnets Cr2Ge2Te6 and Fe3GeTe2 with a Curie temperature of ~65 K and ~205 K, respectively, hosting two groups of magnetic skyrmions. Two sets of topological Hall effect are observed below 60 K when Cr2Ge2Te6 is magnetically ordered. These two groups of skyrmions are directly imaged using magnetic force microscopy. Interestingly, the magnetic skyrmions persist in the heterostructure in the remanent state with zero applied magnetic field. Our results are promising for the realization of skyrmionic devices based on van der Waals heterostructures hosting multiple skyrmion phases.

cond-mat.mes-hall↗
arXiv2021

Mesoscopic Transport of Quantum Anomalous Hall Effect in Sub-Micron Size Regime

The quantum anomalous Hall (QAH) effect has been demonstrated in two-dimensional topological insulator systems incorporated with ferromagnetism. However, a comprehensive understanding of mesoscopic transport in sub-micron QAH devices has yet been established. Here we fabricated miniaturized QAH devices with channel widths down to 600 nm, where the QAH features are still preserved. A back-scattering channel is formed in narrow QAH devices through percolative hopping between 2D compressible puddles. Large resistance fluctuations are observed in narrow devices near the coercive field, which is associated with collective interference between intersecting paths along domain walls when the device geometry is smaller than the phase coherence length $L_ϕ$. Through measurement of size-dependent breakdown current, we confirmed that the chiral edge states are confined at the physical boundary with its width on the order of Fermi wavelength.

cond-mat.mes-hall↗
arXiv2021

Room temperature energy-efficient spin-orbit torque switching in wafer-scale all-vdW heterostructure

The emergent two-dimensional (2D) ferromagnetic materials with unique magnetic properties have endowed great potential for next-generation spintronic devices with extraordinary merits of high flexibility, easy controllability, and high heretointegrability, which is expected to promote the development of Moore's Law continuously. However, it is extremely challenging to realize magnetic switching with ultra-low power consumption at room temperature. Here, we demonstrate the room-temperature spin-orbit torque (SOT) driven magnetization switching in a well-epitaxial all-van der Waals (vdW) heterostructure. The topological insulator Bi2Te3 not only helps to elevate the Curie temperature of Fe3GeTe2 (FGT) through interfacial exchange coupling but also works as a spin current source allowing to switch FGT at a low current density of 2.2 * 106 A cm2. A large SOT efficiency of 0.7 is measured at room temperature, and the thickness of FGT is further adjusted to reduce the influence of the thermal contribution on the second-harmonic signal. Furthermore, the temperature and thickness-dependent SOT efficiency prove that the large SOT in our system mainly originates from the nontrivial origin of topological materials. Our experiment has enabled an all-vdW SOT structure and lays a solid foundation for the implementation of room-temperature all-vdW spintronic devices in the future.

physics.app-ph↗
arXiv2021

Max and Coincidence Neurons in Neural Networks

Network design has been a central topic in machine learning. Large amounts of effort have been devoted towards creating efficient architectures through manual exploration as well as automated neural architecture search. However, todays architectures have yet to consider the diversity of neurons and the existence of neurons with specific processing functions. In this work, we optimize networks containing models of the max and coincidence neurons using neural architecture search, and analyze the structure, operations, and neurons of optimized networks to develop a signal-processing ResNet. The developed network achieves an average of 2% improvement in accuracy and a 25% improvement in network size across a variety of datasets, demonstrating the importance of neuronal functions in creating compact, efficient networks.

cs.CV↗
arXiv2021

Deep Unitary Convolutional Neural Networks

Deep neural networks can suffer from the exploding and vanishing activation problem, in which the networks fail to train properly because the neural signals either amplify or attenuate across the layers and become saturated. While other normalization methods aim to fix the stated problem, most of them have inference speed penalties in those applications that require running averages of the neural activations. Here we extend the unitary framework based on Lie algebra to neural networks of any dimensionalities, overcoming the major constraints of the prior arts that limit synaptic weights to be square matrices. Our proposed unitary convolutional neural networks deliver up to 32% faster inference speeds and up to 50% reduction in permanent hard disk space while maintaining competitive prediction accuracy.

cs.LG↗
arXiv2021

Bulk dissipation in the quantum anomalous Hall effect

Even at the lowest accessible temperatures, measurements of the quantum anomalous Hall (QAH) effect have indicated the presence of parasitic dissipative conduction channels. There is no consensus whether parasitic conduction is related to processes in the bulk or along the edges. Here, we approach this problem by comparing transport measurements of Hall bar and Corbino geometry devices fabricated from Cr-doped (BiSb)$_2$Te$_3$. We identify bulk conduction as the dominant source of dissipation at all values of temperature and in-plane electric field. Furthermore, we observe identical breakdown phenomenology in both geometries, indicating that breakdown of the QAH phase is a bulk process. The methodology developed in this study could be used to identify dissipative conduction mechanisms in new QAH materials, ultimately guiding material development towards realization of the QAH effect at higher temperatures.

cond-mat.mes-hall↗
arXiv2021

Thickness-Driven Quantum Anomalous Hall Phase Transition in Magnetic Topological Insulator Thin Films

The quantized version of anomalous Hall effect realized in magnetic topological insulators (MTIs) has great potential for the development of topological quantum physics and low-power electronic/spintronic applications. To enable dissipationless chiral edge conduction at zero magnetic field, effective exchange field arisen from the aligned magnetic dopants needs to be large enough to yield specific spin sub-band configurations. Here we report the thickness-tailored quantum anomalous Hall (QAH) effect in Cr-doped (Bi,Sb)2Te3 thin films by tuning the system across the two-dimensional (2D) limit. In addition to the Chern number-related metal-to-insulator QAH phase transition, we also demonstrate that the induced hybridization gap plays an indispensable role in determining the ground magnetic state of the MTIs, namely the spontaneous magnetization owning to considerable Van Vleck spin susceptibility guarantees the zero-field QAH state with unitary scaling law in thick samples, while the quantization of the Hall conductance can only be achieved with the assistance of external magnetic fields in ultra-thin films. The modulation of topology and magnetism through structural engineering may provide a useful guidance for the pursuit of QAH-based new phase diagrams and functionalities.

cond-mat.mes-hall↗
arXiv2021

Roadmap of spin-orbit torques

Spin-orbit torque (SOT) is an emerging technology that enables the efficient manipulation of spintronic devices. The initial processes of interest in SOTs involved electric fields, spin-orbit coupling, conduction electron spins and magnetization. More recently interest has grown to include a variety of other processes that include phonons, magnons, or heat. Over the past decade, many materials have been explored to achieve a larger SOT efficiency. Recently, holistic design to maximize the performance of SOT devices has extended material research from a nonmagnetic layer to a magnetic layer. The rapid development of SOT has spurred a variety of SOT-based applications. In this Roadmap paper, we first review the theories of SOTs by introducing the various mechanisms thought to generate or control SOTs, such as the spin Hall effect, the Rashba-Edelstein effect, the orbital Hall effect, thermal gradients, magnons, and strain effects. Then, we discuss the materials that enable these effects, including metals, metallic alloys, topological insulators, two-dimensional materials, and complex oxides. We also discuss the important roles in SOT devices of different types of magnetic layers. Afterward, we discuss device applications utilizing SOTs. We discuss and compare three-terminal and two-terminal SOT-magnetoresistive random-access memories (MRAMs); we mention various schemes to eliminate the need for an external field. We provide technological application considerations for SOT-MRAM and give perspectives on SOT-based neuromorphic devices and circuits. In addition to SOT-MRAM, we present SOT-based spintronic terahertz generators, nano-oscillators, and domain wall and skyrmion racetrack memories. This paper aims to achieve a comprehensive review of SOT theory, materials, and applications, guiding future SOT development in both the academic and industrial sectors.

cond-mat.mes-hall↗
arXiv2020

Magnetic Skyrmions for Unconventional Computing

Improvements in computing performance have significantly slowed down over the past few years owing to the intrinsic limitations of computing hardware. However, the demand for data computing has increased exponentially. To solve this problem, tremendous attention has been focused on the continuous scaling of Moore's Law as well as the advanced non-von Neumann computing architecture. A rich variety of unconventional computing paradigms has been raised with the rapid development of nanoscale devices. Magnetic skyrmions, spin swirling quasiparticles, have been endowed with great expectations for unconventional computing due to their potential as the smallest information carriers by exploiting their physics and dynamics. In this paper, we provide an overview of the recent progress of skyrmion-based unconventional computing from a joint device-application perspective. This paper aims to build up a panoramic picture, analyze the remaining challenges, and most importantly to shed light on the outlook of skyrmion based unconventional computing for interdisciplinary researchers.

cond-mat.mes-hall↗
arXiv2020

Topology-Dependent Brownian Gyromotion of a Single Skyrmion

Non-interacting particles exhibiting Brownian motion have been observed in many occasions of sciences, such as molecules suspended in liquids, optically trapped microbeads, and spin textures in magnetic materials. In particular, a detailed examination of Brownian motion of spin textures is important for designing thermally stable spintronic devices which motivates the present study. In this Letter, through using temporally and spatially resolved polar magneto-optic Kerr effect (MOKE) microscopy, we have experimentally observed the thermal fluctuation-induced random walk of a single isolated Néel-type magnetic skyrmion in an interfacially asymmetric Ta/CoFeB/TaOx multilayer. An intriguing topology dependent Brownian gyromotion behavior of skyrmions has been identified. The onset of Brownian gyromotion of a single skyrmion induced by the thermal effects, including a nonlinear temperature-dependent diffusion coefficient and topology-dependent gyromotion are further formulated based on the stochastic Thiele equation. The experimental and numerical demonstration of topology-dependent Brownian gyromotion of skyrmions can be useful for understanding the nonequilibrium magnetization dynamics and implementing spintronic devices.

cond-mat.mes-hall↗
arXiv2020

Chiral symmetry breaking for deterministic switching of perpendicular magnetization by spin-orbit torque

Symmetry breaking is a characteristic to determine which branch of a bifurcation system follows upon crossing a critical point. Specifically, in spin-orbit torque (SOT) devices, a fundamental question arises: how to break the symmetry of the perpendicular magnetic moment by the in-plane spin polarization? Here, we show that the chiral symmetry breaking by the DMI can induce the deterministic SOT switching of the perpendicular magnetization. By introducing a gradient of saturation magnetization or magnetic anisotropy, non-collinear spin textures are formed by the gradient of effective SOT strength, and thus the chiral symmetry of the SOT-induced spin textures is broken by the DMI, resulting in the deterministic magnetization switching. We introduce a strategy to induce an out-of-plane (z) gradient of magnetic properties, as a practical solution for the wafer-scale manufacture of SOT devices.

cond-mat.mes-hall↗
arXiv2020

Criticality or Supersymmetry Breaking ?

In many stochastic dynamical systems, ordinary chaotic behavior is preceded by a full-dimensional phase that exhibits 1/f-type power-spectra and/or scale-free statistics of (anti)instantons such as neuroavalanches, earthquakes, etc. In contrast with the phenomenological concept of self-organized criticality, the recently developed approximation-free supersymmetric theory of stochastic differential equations, or stochastics, (STS) identifies this phase as the noise-induced chaos (N-phase), i.e., the phase where the topological supersymmetry pertaining to all stochastic dynamical systems is broken spontaneously by the condensation of the noise-induced (anti-)instantons. Here, we support this picture in the context of neurodynamics. We study a 1D chain of neuron-like elements and find that the dynamics in the N-phase is indeed featured by positive stochastic Lyapunov exponents and dominated by (anti)instantonic processes of (creation)annihilation of kinks and antikinks, which can be viewed as predecessors of boundaries of neuroavalanches. We also construct the phase diagram of emulated stochastic neurodynamics on Spikey neuromorphic hardware and demonstrate that the width of the N-phase vanishes in the deterministic limit in accordance with STS. As a first result of the application of STS to neurodynamics comes the conclusion that a conscious brain can reside only in the N-phase.

q-bio.NC↗
arXiv2020

Néel-type skyrmion in WTe2/Fe3GeTe2 van der Waals heterostructure

The promise of high-density and low-energy-consumption devices motivates the search for layered structures that stabilize chiral spin textures such as topologically protected skyrmions. At the same time, layered structures provide a new platform for the discovery of new physics and effects. Recently discovered long-range intrinsic magnetic orders in the two-dimensional van der Waals materials offer new opportunities. Here we demonstrate the Dzyaloshinskii-Moriya interaction and Néel-type skyrmions are induced at the WTe2/Fe3GeTe2 interface. Fe3GeTe2 is a ferromagnetic material with strong perpendicular magnetic anisotropy. We demonstrate that the strong spin orbit interaction in 1T'-WTe2 does induce a large interfacial Dzyaloshinskii-Moriya interaction at the interface with Fe3GeTe2 due to the inversion symmetry breaking to stabilize skyrmions. Transport measurements show the topological Hall effect in this heterostructure for temperatures below 100 K. Furthermore, Lorentz transmission electron microscopy is used to directly image Néel-type skyrmions along with aligned and stripe-like domain structure. This interfacial coupling induced Dzyaloshinskii-Moriya interaction is estimated to have a large energy of 1.0 mJ/m^2, which can stabilize the Néel-type skyrmions in this heterostructure. This work paves a path towards the skyrmionic devices based on van der Waals heterostructures.

cond-mat.mtrl-sci↗
arXiv2019

Picosecond spin-orbit torque switching of ferrimagnets

Spintronics provides an efficient platform for realizing non-volatile memory and logic devices. In these systems, data is stored in the magnetization of magnetic materials, and magnetization is switched in the writing process. In conventional spintronic devices, ferromagnetic materials are used which have a magnetization dynamics timescale of around the nanoseconds, setting a limit for the switching speed. Increasing the magnetization switching speed has been one of the challenges in spintronic research. In this work we take advantage of the ultrafast magnetization dynamics in ferrimagnetic materials instead of ferromagnets, and we use femtosecond laser pulses and a photoconductive Auston switch to create picosecond current pulses for switching the ferrimagnet. By anomalous Hall and magneto-optic Kerr (MOKE) measurement, we demonstrate the robust picosecond SOT driven magnetization switching of ferrimagnetic GdFeCo. The time-resolved MOKE shows more than 50 GHz magnetic resonance frequency of GdFeCo, indicating faster than 20 ps spin dynamics and tens of picosecond SOT switching speed. Our work provides a promising route to realize picosecond operation speed for non-volatile magnetic memory and logic applications.

physics.app-ph↗
arXiv2019

Large tunneling magnetoresistance in VSe2/MoS2 magnetic tunnel junction

Two-dimensional (2D) van der Waals (vdW) materials provide the possibility of realizing heterostructures with coveted properties. Here, we report a theoretical investigation of the vdW magnetic tunnel junction (MTJ) based on VSe2/MoS2 heterojunction, where the VSe2 monolayer acts as the ferromagnet with the room-temperature ferromagnetism. We propose the concept of spin-orbit torque (SOT) vdW MTJ with reliable reading and efficient writing operations. The non-equilibrium study reveals a large tunneling magnetoresistance (TMR) of 846 % at 300 Kelvin, identifying significantly its parallel and anti-parallel states. Thanks to the strong spin Hall conductivity of MoS2, SOT is promising for the magnetization switching of VSe2 free layer. Quantum-well states come into being and resonances appear in MTJ, suggesting that the voltage control can adjust transport properties effectively. The SOT vdW MTJ based on VSe2/MoS2 provides desirable performance and experimental feasibility, offering new opportunities for 2D spintronics.

cond-mat.mtrl-sci↗