arXiv subjects

Kang L. Wang

Publications and source records attributed to Kang L. Wang.

At least 73 records · Page 4Linked to original sources

arXiv2019

Topological Hall effect at above room temperature in heterostructures composed of a magnetic insulator and a heavy metal

Non-volatile memory and computing technology rely on efficient read and write of ultra-tiny information carriers that do not wear out. Magnetic skyrmions are emerging as a potential carrier since they are topologically robust nanoscale spin textures that can be manipulated with ultralow current density. To date, most of skyrmions are reported in metallic films, which suffer from additional Ohmic loss and thus high energy dissipation. Therefore, skyrmions in magnetic insulators are of technological importance for low-power information processing applications due to their low damping and the absence of Ohmic loss. Moreover, they attract fundamental interest in studying various magnon-skyrmion interactions11. Skyrmions have been observed in one insulating material Cu2OSeO3 at cryogenic temperatures, where they are stabilized by bulk Dzyaloshinskii-Moriya interaction. Here, we report the observation of magnetic skyrmions that survive above room temperature in magnetic insulator/heavy metal heterostructures, i.e., thulium iron garnet/platinum. The presence of these skyrmions results from the Dzyaloshinskii-Moriya interaction at the interface and is identified by the emergent topological Hall effect. Through tuning the magnetic anisotropy via varying temperature, we observe skyrmions in a large window of external magnetic field and enhanced stability of skyrmions in the easy-plane anisotropy regime. Our results will help create a new platform for insulating skyrmion-based room temperature low dissipation spintronic applications.

cond-mat.mtrl-sci↗

arXiv2019

Planar Hall effect in antiferromagnetic MnTe thin films

We show that the spin-orbit coupling (SOC) in alpha-MnTe impacts the transport behavior by generating an anisotropic valence-band splitting, resulting in four spin-polarized pockets near Gamma. A minimal k-dot-p model is constructed to capture this splitting by group theory analysis, a tight-binding model and ab initio calculations. The model is shown to describe the rotation symmetry of the zero-field planer Hall effect (PHE). The upper limit of the PHE percentage is shown to be fundamentally determined by the band shape, and is quantitatively estimated to be roughly 31% by first principles.

cond-mat.mtrl-sci↗

arXiv2019

Experimental creation and annihilation of nonvolatile magnetic skyrmions using voltage control of magnetic anisotropy without an external magnetic field

In this work, we utilize voltage controlled magnetic anisotropy (VCMA) to manipulate magnetic skyrmions that are fixed in space. Memory devices based on this strategy can potentially be of smaller footprint and better energy efficiency than current-controlled motion-based skyrmionic devices. To demonstrate VCMA induced manipulation of skyrmions, we fabricate antiferromagnet/ferromagnet/oxide heterostructure films where skyrmions can be stabilized without any external magnetic field due to the presence of exchange bias. These isolated skyrmions were annihilated by applying a voltage pulse that increased PMA. On the other hand, decreasing PMA promoted formation of more skyrmions. Furthermore, skyrmions can be created from chiral domains by increasing PMA of the system. To corroborate our experimental observations, we performed micromagnetic simulation. The proposed method could potentially lead to novel skyrmion-based memory devices.

cond-mat.mes-hall↗

arXiv2019

Exploring interfacial exchange coupling and sublattice effect in heavy metal/ferrimagnetic insulator heterostructures using Hall measurements, x-ray magnetic circular dichroism, and neutron reflectometry

We use temperature-dependent Hall measurements to identify contributions of spin Hall, magnetic proximity, and sublattice effects to the anomalous Hall signal in heavy metal/ferrimagnetic insulator heterostructures with perpendicular magnetic anisotropy. This approach enables detection of both the magnetic proximity effect onset temperature and the magnetization compensation temperature and provides essential information regarding the interfacial exchange coupling. Onset of a magnetic proximity effect yields a local extremum in the temperature-dependent anomalous Hall signal, which occurs at higher temperature as magnetic insulator thickness increases. This magnetic proximity effect onset occurs at much higher temperature in Pt than W. The magnetization compensation point is identified by a sharp anomalous Hall sign change and divergent coercive field. We directly probe the magnetic proximity effect using x-ray magnetic circular dichroism and polarized neutron reflectometry, which reveal an antiferromagnetic coupling between W and the magnetic insulator. Finally, we summarize the exchange-coupling configurations and the anomalous Hall-effect sign of the magnetized heavy metal in various heavy metal/magnetic insulator heterostructures.

cond-mat.mtrl-sci↗

arXiv2019

Generation and Hall effect of skyrmions enabled via using nonmagnetic point contacts

To enable functional skyrmion based spintronic devices, the controllable generation and manipulation of skyrmions is essential. While the generation of skyrmions by using a magnetic geometrical constriction has already been demonstrated, this approach is difficult to combine with a subsequent controlled manipulation of skyrmions. The high efficiency of skyrmion generation from magnetic constrictions limits the useful current density, resulting in stochastic skyrmion motion, which may obscure topological phenomena such as the skyrmion Hall effect. In order to address this issue, we designed a nonmagnetic conducting Ti/Au point contact in devices made of Ta/CoFeB/TaOx trilayer films. By applying high voltage pulses, we experimentally demonstrated that skyrmions can be dynamically generated. Moreover, the accompanied spin topology dependent skyrmion dynamics, the skyrmion Hall effect is also experimentally observed in the same devices. The creation process has been numerically reproduced through micromagnetic simulations in which the important role of skyrmion-antiskyrmion pair generation is identified. The motion and Hall effect of the skyrmions, immediately after their creation is described using a modified Thiele equation after taking into account the contribution from spatially inhomogeneous spin-orbit torques and the Magnus force. The simultaneous generation and manipulation of skyrmions using a nonmagnetic point contact could provide a useful pathway for designing novel skyrmion based devices.

cond-mat.mes-hall↗

arXiv2018

Single spin sensing of domain wall structure and dynamics in a thin film skyrmion host

Skyrmions are nanoscale magnetic structures with features promising for future low-power memory or logic devices. In this work, we demonstrate novel scanning techniques based on nitrogen vacancy center magnetometry that simultaneously probe both the magnetic dynamics and structure of room temperature skyrmion bubbles in a thin film system Ta/CoFeB/MgO. We confirm the handedness of the Dzyaloshinskii-Moriya interaction in this material and extract the helicity angle of the skyrmion bubbles. Our measurements also show that the skyrmion bubbles in this material change size in discrete steps, dependent on the local pinning environment, with their average size determined dynamically as their domain walls hop between pinning sites. In addition, an increase in magnetic field noise is observed near all skyrmion bubble domain walls. These measurements highlight the importance of interactions between internal degrees of freedom of skyrmion bubble domain walls and pinning sites in thin film systems. Our observations have relevance for future devices based on skyrmion bubbles where pinning interactions will determine important aspects of current-driven motion.

cond-mat.mes-hall↗

arXiv2018

Femtosecond control of terahertz spin-charge conversion in ferromagnetic heterostructures

Employing electron spin instead of charge to develop spintronic devices holds the merits of low-power consumption in information technologies. Meanwhile, the demand for increasing speed in spintronics beyond current CMOS technology has further triggered intensive researches for ultrafast control of spins even up to unprecedent terahertz regime. The femtosecond laser has been emerging as a potential technique to generate an ultrafast spin-current burst for magnetization manipulation. However, there is a great challenge to establish all-optical control and monitor of the femtosecond transient spin current. Deep insights into the physics and mechanism are extremely essential for the technique. Here, we demonstrate coherently nonthermal excitation of femtosecond spin-charge current conversion parallel to the magnetization in W/CoFeB/Pt heterostructures driven by linearly polarized femtosecond laser pulses. Through systematical investigation we observe the terahertz emission polarization depends on both the magnetization direction and structural asymmetry. We attribute this phenomenon of the terahertz generation parallel to the magnetization induced by linearly polarized femtosecond laser pulses probably to inverse spin-orbit torque effect. Our work not only is beneficial to the deep understanding of spin-charge conversion and spin transportation, but also helps develop novel on-chip terahertz opto-spintronic devices.

physics.optics↗

arXiv2018

Strong Rashba-Edelstein Effect-Induced Spin-Orbit Torques in Monolayer Transition-Metal Dichalcogenide/Ferromagnet Bilayers

The electronic and optoelectronic properties of two dimensional materials have been extensively explored in graphene and layered transition metal dichalcogenides (TMDs). Spintronics in these two-dimensional materials could provide novel opportunities for future electronics, for example, efficient generation of spin current, which should enable the efficient manipulation of magnetic elements. So far, the quantitative determination of charge current induced spin current and spin-orbit torques (SOTs) on the magnetic layer adjacent to two-dimensional materials is still lacking. Here, we report a large SOT generated by current-induced spin accumulation through the Rashba-Edelstein effect in the composites of monolayer TMD (MoS$_2$ or WSe$_2$)/CoFeB bilayer. The effective spin conductivity corresponding to the SOT turns out to be almost temperature-independent. Our results suggest that the charge-spin conversion in the chemical vapor deposition-grown large-scale monolayer TMDs could potentially lead to high energy efficiency for magnetization reversal and convenient device integration for future spintronics based on two-dimensional materials.

cond-mat.mes-hall↗

arXiv2018

Correlation between Dzyaloshinskii Moriya interaction and spin mixing conductance at antiferromagnet / ferromagnet interface

The rich interaction phenomena at antiferromagnet (AFM)/ ferromagnet (FM) interfaces are key ingredients in AFM spintronics, where many underlying mechanisms remain unclear. Here we report a correlation observed between interfacial Dzyaloshinskii-Moriya interaction (DMI) Ds and effective spin mixing conductance g at IrMn/CoFeB interface. Both Ds and g are quantitatively determined with Brillouin light scattering measurements, and increase with IrMn thickness in the range of 2.5~7.5 nm. Such correlation likely originates from the AFM-states-mediated spin-flip transitions in FM, which promote both interfacial DMI and spin pumping effect. Our findings provide deeper insight into the AFM-FM interfacial coupling for future spintronic design.

cond-mat.mtrl-sci↗

arXiv2018

Field-Free Switching of Perpendicular Magnetic Tunnel Junction via Voltage-Gated Spin Hall Effect for Low-Power Spintronic Memory

Spin Hall effect (SHE) and voltage-controlled magnetic anisotropy (VCMA) are two promising methods for low-power electrical manipulation of magnetization. Recently, magnetic field-free switching of perpendicular magnetization through SHE has been reported with the aid of an exchange bias from an antiferromagnetic IrMn layer. In this letter, we experimentally demonstrate that the IrMn/CoFeB/MgO structure exhibits a VCMA effect of 39 fJ/Vm, which is comparable to that of the Ta/CoFeB/MgO structure. Magnetization dynamics under a combination of the SHE and VCMA are modeled and simulated. It is found that, by applying a voltage of 1.5 V, the critical SHE switching current can be decreased by 10 times owing to the VCMA effect, leading to low-power operations. Furthermore, a high-density spintronic memory structure can be built with multiple magnetic tunnel junctions (MTJs) located on a single IrMn strip. Through hybrid CMOS/MTJ simulations, we demonstrate that fast-speed write operations can be achieved with power consumption of only 8.5 fJ/bit. These findings reveal the possibility to realize high-density and low-power spintronic memory manipulated by voltage-gated SHE.

physics.app-ph↗

arXiv2018

Spintronic nano-scale harvester of broadband microwave energy

The harvesting of ambient radio-frequency (RF) energy is an attractive and clean way to realize the idea of self-powered electronics. Here we present a design for a microwave energy harvester based on a nanoscale spintronic diode (NSD). This diode contains a magnetic tunnel junction with a canted magnetization of the free layer, and can convert RF energy over the frequency range from 100 MHz to 1.2 GHz into DC electric voltage. An attractive property of the developed NSD is the generation of an almost constant DC voltage in a wide range of frequencies of the external RF signals. We further show that the developed NSD provides sufficient DC voltage to power a low-power nanodevice - a black phosphorus photo-sensor. Our results demonstrate that the developed NSD could pave the way for using spintronic detectors as building blocks for self-powered nano-systems, such as implantable biomedical devices, wireless sensors, and portable electronics.

physics.app-ph↗

arXiv2018

Role of dimensional crossover on spin-orbit torque efficiency in magnetic insulator thin films

Magnetic insulators (MIs) attract tremendous interest for spintronic applications due to low Gilbert damping and absence of Ohmic loss. Magnetic order of MIs can be manipulated and even switched by spin-orbit torques (SOTs) generated through spin Hall effect and Rashba-Edelstein effect in heavy metal/MI bilayers. SOTs on MIs are more intriguing than magnetic metals since SOTs cannot be transferred to MIs through direct injection of electron spins. Understanding of SOTs on MIs remains elusive, especially how SOTs scale with the film thickness. Here, we observe the critical role of dimensionality on the SOT efficiency by systematically studying the MI layer thickness dependent SOT efficiency in tungsten/thulium iron garnet (W/TmIG) bilayers. We first show that the TmIG thin film evolves from two-dimensional to three-dimensional magnetic phase transitions as the thickness increases, due to the suppression of long-wavelength thermal fluctuation. Then, we report the significant enhancement of the measured SOT efficiency as the thickness increases. We attribute this effect to the increase of the magnetic moment density in concert with the suppression of thermal fluctuations. At last, we demonstrate the current-induced SOT switching in the W/TmIG bilayers with a TmIG thickness up to 15 nm. The switching current density is comparable with those of heavy metal/ferromagnetic metal cases. Our findings shed light on the understanding of SOTs in MIs, which is important for the future development of ultrathin MI-based low-power spintronics.

cond-mat.mes-hall↗

arXiv2017

Strain-mediated spin-orbit torque switching for magnetic memory

Spin-orbit torque (SOT) represents an energy efficient method to control magnetization in magnetic memory devices. However, deterministically switching perpendicular memory bits usually requires the application of an additional bias field for breaking lateral symmetry. Here we present a new approach of field-free deterministic perpendicular switching using a strain-mediated SOT switching method. The strain-induced magnetoelastic anisotropy breaks the lateral symmetry, and the resulting symmetry-breaking is controllable. A finite element model and a macrospin model are used to numerically simulate the strain-mediated SOT switching mechanism. The results show that a relatively small voltage (${\pm}0.5$ V) along with a modest current ($3.5 \times 10^{7} A/cm^{2}$) can produce a 180° perpendicular magnetization reversal. The switching direction (up or down) is dictated by the voltage polarity (positive or negative) applied to the piezoelectric layer in the magnetoelastic/heavy metal/piezoelectric heterostructure. The switching speed can be as fast as 10 GHz. More importantly, this control mechanism can be potentially implemented in a magnetic random-access memory system with small footprint, high endurance and high tunnel magnetoresistance (TMR) readout ratio.

physics.app-ph↗

arXiv2017

Part-per-million quantization and current-induced breakdown of the quantum anomalous Hall effect

In the quantum anomalous Hall effect, quantized Hall resistance and vanishing longitudinal resistivity are predicted to result from the presence of dissipationless, chiral edge states and an insulating 2D bulk, without requiring an external magnetic field. Here, we explore the potential of this effect in magnetic topological insulator thin films for metrological applications. Using a cryogenic current comparator system, we measure quantization of the Hall resistance to within one part per million and longitudinal resistivity under 10 m$Ω$ per square at zero magnetic field. Increasing the current density past a critical value leads to a breakdown of the quantized, low-dissipation state, which we attribute to electron heating in bulk current flow. We further investigate the pre-breakdown regime by measuring transport dependence on temperature, current, and geometry, and find evidence for bulk dissipation, including thermal activation and possible variable-range hopping.

cond-mat.mes-hall↗

arXiv2017

Scaling of Dzyaloshinskii Moriya interaction at heavy metal and ferromagnetic metal interfaces

The Dzyaloshinskii Moriya Interaction (DMI) at the heavy metal (HM) and ferromagnetic metal (FM) interface has been recognized as a key ingredient in spintronic applications. Here we investigate the chemical trend of DMI on the 5d band filling (5d^3~5d^10) of the HM element in HM/CoFeB/MgO multilayer thin films. DMI is quantitatively evaluated by measuring asymmetric spin wave dispersion using Brillouin light scattering. Sign reversal and 20 times modification of the DMI coefficient D have been measured as the 5d HM element is varied. The chemical trend can be qualitatively understood by considering the 5d and 3d bands alignment at the HM/FM interface and the subsequent orbital hybridization around the Fermi level. Furthermore, a positive correlation is observed between DMI and spin mixing conductance at the HM/FM interfaces. Our results provide new insights into the interfacial DMI for designing future spintronic devices.

cond-mat.mtrl-sci↗

arXiv2017

Chiral transport along magnetic domain walls in the quantum anomalous Hall effect

The recent prediction, and subsequent discovery, of the quantum anomalous Hall (QAH) effect in thin films of the three-dimensional ferromagnetic topological insulator (MTI) (Cr$_y$Bi$_x$Sb$_{1-x-y}$)$_2$Te$_3$ has opened new possibilities for chiral-edge-state-based devices in zero external magnetic field. Like the $ν=1$ quantum Hall system, the QAH system is predicted to have a single chiral edge mode circulating along the boundary of the film. Backscattering of the chiral edge mode should be suppressed, as recently verified by the observation of well-quantized Hall resistivities $ρ_{yx} = \pm h/e^2$, along with longitudinal resistivities as low as a few ohms. Dissipationless 1D conduction is also expected along magnetic domain walls. Here, we intentionally create a magnetic domain wall in a MTI and study electrical transport along the domain wall. We present the first observation of chiral transport along domain walls, in agreement with theoretical predictions. We present further evidence that two modes equilibrate and co-propagate along the length of the domain wall.

cond-mat.mes-hall↗

arXiv2017

Dzyaloshinskii Moriya interaction across antiferromagnet / ferromagnet interface

The antiferromagnet (AFM) / ferromagnet (FM) interfaces are of central importance in recently developed pure electric or ultrafast control of FM spins, where the underlying mechanisms remain unresolved. Here we report the direct observation of Dzyaloshinskii Moriya interaction (DMI) across the AFM/FM interface of IrMn/CoFeB thin films. The interfacial DMI is quantitatively measured from the asymmetric spin wave dispersion in the FM layer using Brillouin light scattering. The DMI strength is enhanced by a factor of 7 with increasing IrMn layer thickness in the range of 1- 7.5 nm. Our findings provide deeper insight into the coupling at AFM/FM interface and may stimulate new device concepts utilizing chiral spin textures such as magnetic skyrmions in AFM/FM heterostructures.

cond-mat.mtrl-sci↗

arXiv2017

Deficiency of the Bulk Spin Hall Effect Model for Spin-Orbit Torques in Magnetic Insulator/Heavy Metal Heterostructures

Electrical currents in a magnetic insulator/heavy metal heterostructure can induce two simultaneous effects, namely, spin Hall magnetoresistance (SMR) on the heavy metal side and spin-orbit torques (SOTs) on the magnetic insulator side. Within the framework of the pure spin current model based on the bulk spin Hall effect (SHE), the ratio of the spin Hall-induced anomalous Hall effect (SH-AHE) to SMR should be equal to the ratio of the field-like torque (FLT) to damping-like torque (DLT). We perform a quantitative study of SMR, SH-AHE, and SOTs in a series of thulium iron garnet/platinum or Tm3Fe5O12/Pt heterostructures with different Tm3Fe5O12 thicknesses, where Tm3Fe5O12 is a ferrimagnetic insulator with perpendicular magnetic anisotropy. We find the ratio between measured effective fields of FLT and DLT is at least 2 times larger than the ratio of the SH-AHE to SMR. In addition, the bulk SHE model grossly underestimates the spin torque efficiency of FLT. Our results reveal deficiencies of the bulk SHE model and also address the importance of interfacial effects such as the Rashba and magnetic proximity effects in magnetic insulator/heavy metal heterostructures.

cond-mat.mtrl-sci↗