arXiv subjects

Kang L. Wang

Publications and source records attributed to Kang L. Wang.

At least 91 records · Page 5Linked to original sources

arXiv2017

A neuronal dynamics study on a neuromorphic chip

Neuronal firing activities have attracted a lot of attention since a large population of spatiotemporal patterns in the brain is the basis for adaptive behavior and can also reveal the signs for various neurological disorders including Alzheimer's, schizophrenia, epilepsy and others. Here, we study the dynamics of a simple neuronal network using different sets of settings on a neuromorphic chip. We observed three different types of collective neuronal firing activities, which agree with the clinical data taken from the brain. We constructed a brain phase diagram and showed that within the weak noise region, the brain is operating in an expected noise-induced phase (N-phase) rather than at a so-called self-organized critical boundary. The significance of this study is twofold: first, the deviation of neuronal activities from the normal brain could be symptomatic of diseases of the central nervous system, thus paving the way for new diagnostics and treatments; second, the normal brain states in the N-phase are optimal for computation and information processing. The latter may provide a way to establish powerful new computing paradigm using collective behavior of networks of spiking neurons.

q-bio.NC↗

arXiv2017

Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures

Spin-transfer-torque magnetic random access memory (STT-MRAM) attracts extensive attentions due to its non-volatility, high density and low power consumption. The core device in STT-MRAM is CoFeB/MgO-based magnetic tunnel junction (MTJ), which possesses a high tunnel magnetoresistance ratio as well as a large value of perpendicular magnetic anisotropy (PMA). It has been experimentally proven that a capping layer coating on CoFeB layer is essential to obtain a strong PMA. However, the physical mechanism of such effect remains unclear. In this paper, we investigate the origin of the PMA in MgO/CoFe/metallic capping layer structures by using a first-principles computation scheme. The trend of PMA variation with different capping materials agrees well with experimental results. We find that interfacial PMA in the three-layer structures comes from both the MgO/CoFe and CoFe/capping layer interfaces, which can be analyzed separately. Furthermore, the PMAs in the CoFe/capping layer interfaces are analyzed through resolving the magnetic anisotropy energy by layer and orbital. The variation of PMA with different capping materials is attributed to the different hybridizations of both d and p orbitals via spin-orbital coupling. This work can significantly benefit the research and development of nanoscale STT-MRAM.

cond-mat.mtrl-sci↗

arXiv2017

An Inexact Inverse Power Method for Numerical Analysis of Stochastic Dynamic Systems

This paper proposes an efficient method for computing partial eigenvalues of large sparse matrices what can be called the inexact inverse power method (IIPM). It is similar to the inexact Rayleigh quotient method and inexact Jacobi-Davidson method that it uses only a low precision approximate solution for the inner iteration. But this method uses less memory than inexact Jacobi-Davidson method and has stronger convergence performance than inexact Rayleigh quotient method. We exemplify the advantages of IIPM by applying it to find the ground state in theory of stochastics. Here we need to solve hundreds of large-scale matrix. The computational results show that this approach is a particularly useful method.

math.NA↗

arXiv2016

Giant interfacial perpendicular magnetic anisotropy in MgO/CoFe/capping layer structures

Magnetic tunnel junction (MTJ) based on CoFeB/MgO/CoFeB structures is of great interest due to its application in the spin-transfer-torque magnetic random access memory (STT-MRAM). Large interfacial perpendicular magnetic anisotropy (PMA) is required to achieve high thermal stability. Here we use first-principles calculations to investigate the magnetic anisotropy energy (MAE) of MgO/CoFe/capping layer structures, where the capping materials include 5d metals Hf, Ta, Re, Os, Ir, Pt, Au and 6p metals Tl, Pb, Bi. We demonstrate that it is feasible to enhance PMA by using proper capping materials. Relatively large PMA is found in the structures with capping materials of Hf, Ta, Os, Ir and Pb. More importantly, the MgO/CoFe/Bi structure gives rise to giant PMA (6.09 mJ/m2), which is about three times larger than that of the MgO/CoFe/Ta structure. The origin of the MAE is elucidated by examining the contributions to MAE from each atomic layer and orbital. These findings provide a comprehensive understanding of the PMA and point towards the possibility to achieve advanced-node STT-MRAM with high thermal stability.

cond-mat.mtrl-sci↗

arXiv2016

Topological transitions induced by antiferromagnetism in a thin-film topological insulator

Ferromagnetism in topological insulators (TIs) opens a topologically non-trivial exchange band gap, providing an exciting platform to manipulate the topological order through an external magnetic field. Here, we experimentally show that the surface of an antiferromagnetic thin film can independently control the topological order of the top and the bottom surface states of a TI thin film through proximity couplings. During the magnetization reversal in a field scan, two intermediate spin configurations stem from unsynchronized magnetic switchings of the top and the bottom AFM/TI interfaces. These magnetic configurations are shown to result in new topological phases with non-zero Chern numbers for each surface, introducing two counter-propagating chiral edge modes inside the exchange gap. This change in the number of transport channels, as the result of the topological transitions, induces antisymmetric magneto-resistance spikes during the magnetization reversal. With the high Neel ordering temperature provided by the antiferromagnetic layers, the signature of the induced topological transition persists in transport measurements up to a temperature of around 90 K, a factor of three over the Curie temperature in a typical magnetically doped TI thin film.

cond-mat.mes-hall↗

arXiv2016

Interfacial Control of Dzyaloshinskii Moriya Interaction in Heavy Metal_Ferromagnetic Metal Thin Film Heterostructures

The interfacial Dzyaloshinskii Moriya Interaction (DMI) in ultrathin magnetic thin film heterostructures provides a new approach for controlling spin textures on mesoscopic length scales. Here we investigate the dependence of the interfacial DMI constant D on a Pt wedge insertion layer in Ta_CoFeB_Pt(wedge)_MgO thin films by observing the asymmetric spin wave dispersion using Brillouin light scattering. Continuous tuning of D by more than a factor of three is realized by inserting less than one monolayer of Pt. The observations provide new insights for designing magnetic thin film heterostructures with tailored D for controlling skyrmions and magnetic domain wall chirality and dynamics.

cond-mat.mtrl-sci↗

arXiv2016

Stochastic Dynamics and Combinatorial Optimization

Natural dynamics is often dominated by sudden nonlinear processes such as neuroavalanches, gamma-ray bursts, solar flares \emph{etc}. that exhibit scale-free statistics much in the spirit of the logarithmic Ritcher scale for earthquake magnitudes. On phase diagrams, stochastic dynamical systems (DSs) exhibiting this type of dynamics belong to the finite-width phase (N-phase for brevity) that precedes ordinary chaotic behavior and that is known under such names as noise-induced chaos, self-organized criticality, dynamical complexity \emph{etc.} Within the recently formulated approximation-free supersymemtric theory of stochastics, the N-phase can be roughly interpreted as the noise-induced "overlap" between integrable and chaotic deterministic dynamics. As a result, the N-phase dynamics inherits the properties of the both. Here, we analyze this unique set of properties and conclude that the N-phase DSs must naturally be the most efficient optimizers: on one hand, N-phase DSs have integrable flows with well-defined attractors that can be associated with candidate solutions and, on the other hand, the noise-induced attractor-to-attractor dynamics in the N-phase is effectively chaotic or a-periodic so that a DS must avoid revisiting solutions/attractors thus accelerating the search for the best solution. Based on this understanding, we propose a method for stochastic dynamical optimization using the N-phase DSs. This method can be viewed as a hybrid of the simulated and chaotic annealing methods. Our proposition can result in a new generation of hardware devices for efficient solution of various search and/or combinatorial optimization problems.

physics.comp-ph↗

arXiv2016

Chiral Majorana edge state in a quantum anomalous Hall insulator-superconductor structure

After the recognition of the possibility to implement Majorana fermions using the building blocks of solid-state matters, the detection of this peculiar particle has been an intense focus of research. Here we experimentally demonstrate a collection of Majorana fermions living in a one-dimensional transport channel at the boundary of a superconducting quantum anomalous Hall insulator thin film. A series of topological phase changes are controlled by the reversal of the magnetization, where a half-integer quantized conductance plateau (0.5e2/h) is observed as a clear signature of the Majorana phase. This transport signature can be well repeated during many magnetic reversal sweeps, and can be tracked at different temperatures, providing a promising evidence of the chiral Majorana edge modes in the system.

cond-mat.supr-con↗

arXiv2016

Tailoring Exchange Couplings in Magnetic Topological Insulator/Antiferromagnet Heterostructures

Magnetic topological insulators such as Cr-doped (Bi,Sb)2Te3 provide a platform for the realization of versatile time-reversal symmetry-breaking physics. By constructing heterostructures with Néel order in an antiferromagnetic CrSb and magnetic topological order in Cr-doped (Bi,Sb)2Te3, we realize emergent interfacial magnetic phenomena which can be tailored through artificial structural engineering. Through deliberate geometrical design of heterostructures and superlattices, we demonstrate the use of antiferromagnetic exchange coupling in manipulating the magnetic properties of the topological surface massive Dirac fermions. This work provides a new framework on integrating topological insulators with antiferromagnetic materials and unveils new avenues towards dissipationless topological antiferromagnetic spintronics.

cond-mat.mtrl-sci↗

arXiv2016

Topological supersymmetry breaking: Definition and stochastic generalization of chaos and the limit of applicability of statistics

The concept of deterministic dynamical chaos has a long history and is well established by now. Nevertheless, its field theoretic essence and its stochastic generalization have been revealed only very recently. Within the newly found supersymmetric theory of stochastics (STS), all stochastic differential equations (SDEs) possess topological or de Rahm supersymmetry and stochastic chaos is the phenomenon of its spontaneous breakdown. Even though the STS is free of approximations and thus is technically solid, it is still missing a firm interpretational basis in order to be physically sound. Here, we make a few important steps toward the construction of the interpretational foundation for the STS. In particular, we discuss that one way to understand why the ground states of chaotic SDEs are conditional (not total) probability distributions, is that some of the variables have infinite memory of initial conditions and thus are not "thermalized", i.e., cannot be described by the initial-conditions-independent probability distributions. As a result, the definitive assumption of physical statistics that the ground state is a steady-state total probability distribution is not valid for chaotic SDEs.

math-ph↗

arXiv2016

Direct Observation of the Skyrmion Hall Effect

The well-known Hall effect describes the transverse deflection of charged particles (electrons or holes) in an electric-current carrying conductor under the influence of perpendicular magnetic fields, as a result of the Lorentz force. Similarly, it is intriguing to examine if quasi-particles without an electric charge, but with a topological charge, show related transverse motion. Chiral magnetic skyrmions with a well-defined spin topology resulting in a unit topological charge serve as good candidates to test this hypothesis. In spite of the recent progress made on investigating magnetic skyrmions, direct observation of the skyrmion Hall effect in real space has, remained elusive. Here, by using a current-induced spin Hall spin torque, we experimentally observe the skyrmion Hall effect by driving skyrmions from creep motion into the steady flow motion regime. We observe a Hall angle for the magnetic skyrmion motion as large as 15 degree for current densities smaller than 10 MA/cm^(2) at room temperature. The experimental observation of transverse transport of skyrmions due to topological charge may potentially create many exciting opportunities for the emerging field of skyrmionics, including novel applications such as topological selection.

cond-mat.mes-hall↗

arXiv2016

Mobile Néel skyrmions at room temperature: status and future

Magnetic skyrmions are topologically protected spin textures that exhibit many fascinating features. As compared to the well-studied cryogenic Bloch skyrmions in bulk materials, we focus on the room-temperature Néel skyrmions in thin-film systems with an interfacial broken inversion symmetry in this article. Specifically, we show the stabilization, the creation, and the implementation of Néel skyrmions that are enabled by the electrical current-induced spin-orbit torques. Towards the nanoscale Néel skyrmions, we further discuss the challenges from both material optimization and imaging characterization perspectives.

cond-mat.mes-hall↗

arXiv2015

Resonant magneto-optic Kerr effect in the magnetic topological insulator Cr:(Sb$_x$,Bi$_{1-x}$)$_2$Te$_3$

We report measurements of the polar Kerr effect, proportional to the out-of-plane component of the magnetization, in thin films of the magnetically doped topological insulator $(\text{Cr}_{0.12}\text{Bi}_{0.26}\text{Sb}_{0.62})_2\text{Te}_3$. Measurements of the complex Kerr angle, $Θ_K$, were performed as a function of photon energy in the range $0.8\text{ eV}<\hbarω<3.0\text{ eV}$. We observed a peak in the real part of $Θ_K(ω)$ and zero crossing in the imaginary part that we attribute to resonant interaction with a spin-orbit avoided crossing located $\approx$ 1.6 eV above the Fermi energy. The resonant enhancement allows measurement of the temperature and magnetic field dependence of $Θ_K$ in the ultrathin film limit, $d\geq2$ quintuple layers. We find a sharp transition to zero remanent magnetization at 6 K for $d<8$~QL, consistent with theories of the dependence of impurity spin interactions on film thickness and their location relative to topological insulator surfaces.

cond-mat.mes-hall↗

arXiv2015

Electric-field control of spin-orbit torque in a magnetically doped topological insulator

Electric-field manipulation of magnetic order has proved of both fundamental and technological importance in spintronic devices. So far, electric-field control of ferromagnetism, magnetization and magnetic anisotropy has been explored in various magnetic materials, but the efficient electric-field control of spin-orbit torque (SOT) still remains elusive. Here, we report the effective electric-field control of a giant SOT in a Cr-doped topological insulator (TI) thin film using a top-gate FET structure. The SOT strength can be modulated by a factor of 4 within the accessible gate voltage range, and it shows strong correlation with the spin-polarized surface current in the film. Furthermore, we demonstrate the magnetization switching by scanning gate voltage with constant current and in-plane magnetic field applied in the film. The effective electric-field control of SOT and the giant spin-torque efficiency in Cr-doped TI may lead to the development of energy-efficient gate-controlled spin-torque devices compatible with modern field-effect semiconductor technologies.

cond-mat.str-el↗

arXiv2015

Metal-to-Insulator Switching in Quantum Anomalous Hall States

After decades of searching for the dissipationless transport in the absence of any external magnetic field, quantum anomalous Hall effect (QAHE) was recently achieved in magnetic topological insulator (TI) films. However, the universal phase diagram of QAHE and its relation with quantum Hall effect (QHE) remain to be investigated. Here, we report the experimental observation of the giant longitudinal resistance peak and zero Hall conductance plateau at the coercive field in the 6 quintuple-layer (Cr0.12Bi0.26Sb0.62)2Te3 film, and demonstrate the metal-to-insulator switching between two opposite QAHE plateau states up to 0.3 K. Moreover, the universal QAHE phase diagram is realized through the angle-dependent measurements. Our results address that the quantum phase transitions in both QAHE and QHE regimes are in the same universality class, yet the microscopic details are different. In addition, the realization of the QAHE insulating state unveils new ways to explore quantum phase-related physics and applications.

cond-mat.mes-hall↗

arXiv2015

Nanoscale $β$-Nuclear Magnetic Resonance Depth Imaging of Topological Insulators

Considerable evidence suggests that variations in the properties of topological insulators (TIs) at the nanoscale and at interfaces can strongly affect the physics of topological materials. Therefore, a detailed understanding of surface states and interface coupling is crucial to the search for and applications of new topological phases of matter. Currently, no methods can provide depth profiling near surfaces or at interfaces of topologically inequivalent materials. Such a method could advance the study of interactions. Herein we present a non-invasive depth-profiling technique based on $β$-NMR spectroscopy of radioactive $^8$Li$^+$ ions that can provide "one-dimensional imaging" in films of fixed thickness and generates nanoscale views of the electronic wavefunctions and magnetic order at topological surfaces and interfaces. By mapping the $^8$Li nuclear resonance near the surface and 10 nm deep into the bulk of pure and Cr-doped bismuth antimony telluride films, we provide signatures related to the TI properties and their topological non-trivial characteristics that affect the electron-nuclear hyperfine field, the metallic shift and magnetic order. These nanoscale variations in $β$-NMR parameters reflect the unconventional properties of the topological materials under study, and understanding the role of heterogeneities is expected to lead to the discovery of novel phenomena involving quantum materials.

cond-mat.mtrl-sci↗

arXiv2015

Electric-field guiding of magnetic skyrmions

We theoretically study equilibrium and dynamic properties of nanosized magnetic skyrmions in thin magnetic films with broken inversion symmetry, where electric field couples to magnetization via spin-orbit coupling. Based on a symmetry-based phenomenology and micromagnetic simulations we show that this electric-field coupling, via renormalizing the micromagnetic energy, modifies the equilibrium properties of the skyrmion. This change, in turn, results in a significant alteration of the current-induced skyrmion motion. Particularly, speed and direction of the skyrmion can be manipulated by designing a desired energy landscape electrically, which we describe within Thiele's analytical model and demonstrate in micromagnetic simulations including electric-field-controlled magnetic anisotropy. We additionally use this electric-field control to construct gates for controlling skyrmion motion exhibiting a transistor-like and multiplexer-like function. The proposed electric-field effect can thus provide a low energy electrical knob to extend the reach of information processing with skyrmions.

cond-mat.mes-hall↗

arXiv2015

Precise quantization of anomalous Hall effect near zero magnetic field

We report a nearly ideal quantum anomalous Hall effect in a three-dimensional topological insulator thin film with ferromagnetic doping. Near zero applied magnetic field we measure exact quantization in Hall resistance to within a part per 10,000 and longitudinal resistivity under 1 ohm per square, with chiral edge transport explicitly confirmed by non-local measurements. Deviations from this behavior are found to be caused by thermally-activated carriers, which can be eliminated by taking advantage of an unexpected magnetocaloric effect.

cond-mat.mes-hall↗