arXiv subjects

Karin M. Rabe

Publications and source records attributed to Karin M. Rabe.

At least 55 records · Page 3Linked to original sources

arXiv2019

Superlattice-induced ferroelectricity in charge-ordered La$_{1/3}$Sr$_{2/3}$FeO$_{3}$

Charge-order-driven ferroelectrics are an emerging class of functional materials, distinct from conventional ferroelectrics, where electron-dominated switching can occur at high frequency. Despite their promise, only a few systems exhibiting this behavior have been experimentally realized thus far, motivating the need for new materials. Here, we use density functional theory to study the effect of artificial structuring on mixed-valence solid-solution La$_{1/3}$Sr$_{2/3}$FeO$_{3}$ (LSFO), a system well-studied experimentally. Our calculations show that A-site cation (111)-layered LSFO exhibits a ferroelectric charge-ordered phase in which inversion symmetry is broken by changing the registry of the charge order with respect to the superlattice layering. The phase is energetically degenerate with a ground-state centrosymmetric phase, and the computed switching polarization is 39 $μ$C/cm$^{2}$, a significant value arising from electron transfer between Fe ions. Our calculations reveal that artificial structuring of LSFO and other mixed valence oxides with robust charge ordering in the solid solution phase can lead to charge-order-induced ferroelectricity.

cond-mat.mtrl-sci↗

arXiv2019

Ferroelectricity in [111]-oriented epitaxially strained SrTiO$_3$ from first principles

We use first principles density functional theory calculations to investigate the effect of biaxial strain in the low-temperature structural and ferroelectric properties of [111]-oriented SrTiO$_3$. We find that [111] biaxial strain, achievable by coherent epitaxial growth along the [111] direction, induces structural distortions in SrTiO$_3$ that are not present in either bulk or [001]-oriented SrTiO$_3$. Under [111] biaxial strain, SrTiO$_3$ displays ferroelectricity at tensile strain, and paraelectricity at compressive strain. We compute the phonon spectrum and macroscopic polarization of SrTiO$_3$ as a function of [111] biaxial strain, and relate our results to the predictions of the free energy phenomenological model of Pertsev, Tagantsev and Setter [Phys. Rev. B 61, 825 (2000); Phys. Rev. B 65, 219901 (2002)].

cond-mat.mtrl-sci↗

arXiv2018

Artificial two-dimensional polar metal at room temperature

Polar metals, commonly defined by the coexistence of polar crystal structure and metallicity, are thought to be scarce because the long-range electrostatic fields favoring the polar structure are expected to be fully screened by the conduction electrons of a metal. Moreover, reducing from three to two dimensions, it remains an open question whether a polar metal can exist. Here we report on the realization of a room temperature two-dimensional polar metal of the B-site type in tri-color (tri-layer) superlattices BaTiO$_3$/SrTiO$_3$/LaTiO$_3$. A combination of atomic resolution scanning transmission electron microscopy with electron energy loss spectroscopy, optical second harmonic generation, electrical transport, and first-principles calculations have revealed the microscopic mechanisms of periodic electric polarization, charge distribution, and orbital symmetry. Our results provide a route to creating all-oxide artificial non-centrosymmetric quasi-two-dimensional metals with exotic quantum states including coexisting ferroelectric, ferromagnetic, and superconducting phases.

cond-mat.mtrl-sci↗

arXiv2017

Polarization-controlled modulation doping of a ferroelectric from first principles

In a ferroelectric field effect transistor (FeFET), it is generally assumed that the ferroelectric gate plays a purely electrostatic role. Recently it has been shown that in some cases, which could be called 'active FeFETs', electronic states in the ferroelectric contribute to the device conductance as the result of a modulation doping effect in which carriers are transferred from the channel into the ferroelectric layers near the interface. Here we report first-principles calculations and model analysis to elucidate the various aspects of this mechanism and to provide guidance in materials choices and interface termination for optimizing the on-off ratio, using BaTiO3/n-SrTiO3 and PbTiO3/n-SrTiO3 as prototypical systems. It is shown that the modulation doping is substantial in both cases, and that extension of an electrostatic model developed in previous work provides a good description of the transferred charge distribution. This model can be used to suggest additional materials heterostructures for the design of active FeFETs.

cond-mat.mtrl-sci↗

arXiv2017

Phonon-assisted optical absorption in BaSnO$_3$ from first principles

The perovskite BaSnO$_3$ provides a promising platform for the realization of an earth abundant $n$-type transparent conductor. Its optical properties are dominated by a dispersive conduction band of Sn $5s$ states, and by a flatter valence band of O $2p$ states, with an overall indirect gap of about $2.9$ eV. Using first-principles methods, we study the optical properties of BaSnO$_3$ and show that both electron-phonon interactions and exact exchange, included using a hybrid functional, are necessary to obtain a qualitatively correct description of optical absorption in this material. In particular, the electron-phonon interaction drives phonon-assisted optical absorption across the minimum indirect gap and therefore determines the absorption onset, and it also leads to the temperature dependence of the absorption spectrum. Electronic correlations beyond semilocal density functional theory are key to detemine the dynamical stability of the cubic perovskite structure, as well as the correct energies of the conduction bands that dominate absorption. Our work demonstrates that phonon-mediated absorption processes should be included in the design of novel transparent conductor materials.

cond-mat.mtrl-sci↗

arXiv2017

Antiferroelectric topological insulators in orthorhombic $A$MgBi compounds ($A=$ Li, Na, K)

We introduce antiferroelectric topological insulators as a new class of functional materials in which an electric field can be used to control topological order and induce topological phase transitions. Using first principles methods, we predict that several alkali-MgBi orthorhombic members of an $ABC$ family of compounds are antiferroelectric topological insulators. We also show that epitaxial strain and hydrostatic pressure can be used to tune the topological order and the band gap of these $ABC$ compounds. Antiferroelectric topological insulators could enable precise control of topology using electric fields, enhancing the applicability of topological materials in electronics and spintronics.

cond-mat.mtrl-sci↗

arXiv2017

Perovskite Quantum Organismoids

A central characteristic of living beings is the ability to learn from and respond to their environment leading to habit formation and decision making1-3. This behavior, known as habituation, is universal among forms of life with a central nervous system, and interestingly observed even in single cellular organisms that do not possess a brain4-5. Here, we report the discovery of habituation based plasticity utilizing a perovskite quantum system by dynamical modulation of electron localization via reversible dopant incorporation. Microscopic mechanisms and pathways that enable this organismic collective charge-lattice interaction are elucidated by a combination of first-principles theory, synchrotron investigations, ab-initio dynamical simulations and in-situ environmental breathing studies. We implement a new learning algorithm inspired from the conductance relaxation behavior of perovskites that naturally incorporates habituation and demonstrate "learning to forget": a key feature of animal and human brains6. Most surprisingly, our results show that incorporating this elementary skill in learning dramatically boosts the capability of artificial cognitive systems.

cond-mat.mtrl-sci↗

arXiv2016

Charge-order-induced ferroelectricity in LaVO$_{3}$/SrVO$_{3}$ superlattices

The structure and properties of the 1:1 superlattice of LaVO$_{3}$ and SrVO$_{3}$ are investigated with a first-principles density-functional-theory-plus-$U$ (DFT+$U$) method. The lowest energy states are antiferromagnetic charge-ordered Mott-insulating phases. In one of these insulating phases, layered charge ordering combines with the layered cation ordering to produce a polar structure with nonzero spontaneous polarization normal to the interfaces. This polarization is produced by electron transfer between the V$^{3+}$ and V$^{4+}$ layers, and is comparable to that of conventional ferroelectrics. The energy of this polar state relative to the nonpolar ground state is only 3 meV per vanadium. Under tensile strain, this energy difference can be further reduced, suggesting that the polar phase can be induced by applied electric field, yielding an antiferroelectric double-hysteresis loop. If the system does not switch back to the nonpolar state on removal of the field, a ferroelectric-type hysteresis loop could be observed.

cond-mat.mtrl-sci↗

arXiv2016

Stabilization of highly polar BiFeO$_3$-like structure: a new interface design route for enhanced ferroelectricity in artificial perovskite superlattices

In ABO3 perovskites, oxygen octahedron rotations are common structural distortions that can promote large ferroelectricity in BiFeO3 with an R3c structure [1], but suppress ferroelectricity in CaTiO3 with a Pbnm symmetry [2]. For many CaTiO3-like perovskites, the BiFeO3 structure is a metastable phase. Here, we report the stabilization of the highly-polar BiFeO3-like phase of CaTiO3 in a BaTiO3/CaTiO3 superlattice grown on a SrTiO3 substrate. The stabilization is realized by a reconstruction of oxygen octahedron rotations at the interface from the pattern of nonpolar bulk CaTiO3 to a different pattern that is characteristic of a BiFeO3 phase. The reconstruction is interpreted through a combination of amplitude-contrast sub 0.1nm high-resolution transmission electron microscopy and first-principles theories of the structure, energetics, and polarization of the superlattice and its constituents. We further predict a number of new artificial ferroelectric materials demonstrating that nonpolar perovskites can be turned into ferroelectrics via this interface mechanism. Therefore, a large number of perovskites with the CaTiO3 structure type, which include many magnetic representatives, are now good candidates as novel highly-polar multiferroic materials [3].

cond-mat.mtrl-sci↗

arXiv2015

Coupled nonpolar-polar metal-insulator transition in 1:1 SrCrO$_3$/SrTiO$_3$ superlattices: A first-principles study

Using first principles calculations, we determined the epitaxial-strain dependence of the ground state of the 1:1 SrCrO$_3$/SrTiO$_3$ superlattice. The superlattice layering leads to significant changes in the electronic states near the Fermi level, derived from Cr $t_{2g}$ orbitals. An insulating phase is found when the tensile strain is greater than 2.2\% relative to unstrained cubic SrTiO$_3$. The insulating character is shown to arise from Cr $t_{2g}$ orbital ordering, which is produced by an in-plane polar distortion that couples to the superlattice d-bands and is stabilized by epitaxial strain. This effect can be used to engineer the band structure near the Fermi level in transition metal oxide superlattices.

cond-mat.mtrl-sci↗

arXiv2014

Antiferroelectricity in thin film ZrO2 from first principles

Density functional calculations are performed to investigate the experimentally-reported field-induced phase transition in thin-film ZrO2 (J. Muller et al., Nano. Lett. 12, 4318). We find a small energy difference of ~ 1 meV/f.u. between the nonpolar tetragonal and polar orthorhombic structures, characteristic of antiferroelectricity. The requisite first-order transition between the two phases, which atypically for antiferroelectrics have a group-subgroup relation, results from coupling to other zone-boundary modes, as we show with a Landau-Devonshire model. Tetragonal ZrO2 is thus established as a previously unrecognized lead-free antiferroelectric with excellent dielectric properties and compatibility with silicon. In addition, we demonstrate that a ferroelectric phase of ZrO2 can be stabilized through epitaxial strain, and suggest an alternative stabilization mechanism through continuous substitution of Zr by Hf.

cond-mat.mtrl-sci↗

arXiv2014

Antiferroelectricity and ferroelectricity in epitaxially strained PbZrO3 from first principles

Density functional calculations are performed to study the effect of epitaxial strain on PbZrO3. We find a remarkably small energy difference between the epitaxially strained polar R3c and nonpolar Pbam structures over the full range of experimentally accessible epitaxial strains -3% < η< 4%. While ferroelectricity is favored for all compressive strains, for tensile strains the small energy difference between the nonpolar ground state and the alternative polar phase yields a robust antiferroelectric ground state. The coexistence of ferroelectricity and antiferroelectricity observed in thin films is attributed to a combination of strain and depolarization field effects.

cond-mat.mtrl-sci↗

arXiv2014

Determination of ground-state and low-energy structures of perovskite superlattices from first principles

In the development of first-principles high-throughput searches for materials with desirable functional properties, there is a clear need for an efficient method to determine the ground state and low-energy alternative structures of superlattices. A method based on a simple strategy -- to generate starting structures based on low-energy structures of the constituent compounds, which are then optimized via structural relaxation calculations -- is proposed. This "stacking method" is demonstrated on the 2:2 PbTiO$_3$/SrTiO$_3$ superlattice, which has been the subject of recent experimental and theoretical interest. Considerations relevant to wider use of the method are discussed.

cond-mat.mtrl-sci↗

arXiv2013

Hyperferroelectrics: proper ferroelectrics with persistent polarization

All known proper ferroelectrics are unable to polarize normal to a surface or interface if the resulting depolarization field is unscreened, but there is no fundamental principle that enforces this behavior. In this work, we introduce hyperferroelectrics, a new class of proper ferroelectrics which polarize even when the depolarization field is unscreened, this condition being equivalent to instability of a longitudinal optic mode in addition to the transverse-optic-mode instability characteristic of proper ferroelectrics. We use first principles calculations to show that several recently discovered hexagonal ferroelectric semiconductors have this property, and we examine its consequences both in the bulk and in a superlattice geometry.

cond-mat.mtrl-sci↗

arXiv2013

Strain-Induced Hybrid Improper Ferroelectricity in Simple Perovskites from First Principles

We performed first principles calculations for epitaxially strained orthorhombic CaTiO$_3$. The computational results reveal the existence of a metastable ferroelectric phase at compressive strain with unexpected in-plane polarization. Symmetry analysis indicates that two distortion modes at the X point combine to induce the polarization, leading to characterization as a hybrid improper ferroelectric. Our work demonstrates a mechanism for improper ferroelectricity in simple perovskites without the need for symmetry lowering by layering or cation ordering.

cond-mat.mtrl-sci↗

arXiv2013

Pseudopotentials for high-throughput DFT calculations

The increasing use of high-throughput density-functional theory (DFT) calculations in the computational design and optimization of materials requires the availability of a comprehensive set of soft and transferable pseudopotentials. Here we present design criteria and testing results for a new open-source "GBRV" ultrasoft pseudopotential library that has been optimized for use in high-throughput DFT calculations. We benchmark the GBRV potentials, as well as two other pseudopotential sets available in the literature, to all-electron calculations in order to validate their accuracy. The results allow us to draw conclusions about the accuracy of modern pseudopotentials in a variety of chemical environments.

cond-mat.mtrl-sci↗

arXiv2013

Reversal of the lattice structure in SrCoOx epitaxial thin films studied by real-time optical spectroscopy and first-principles calculations

Using real-time spectroscopic ellipsometry, we directly observed a reversible lattice and electronic structure evolution in SrCoOx (x = 2.5 - 3) epitaxial thin films. Drastically different electronic ground states, which are extremely susceptible to the oxygen content x, are found in the two topotactic phases, i.e. the brownmillerite SrCoO2.5 and the perovskite SrCoO3. First principles calculations confirmed substantial differences in the electronic structure, including a metal-insulator transition, which originates from the modification in the Co valence states and crystallographic structures. More interestingly, the two phases can be reversibly controlled by changing the ambient pressure at greatly reduced temperatures. Our finding provides an important pathway to understanding the novel oxygen-content-dependent phase transition uniquely found in multivalent transition metal oxides.

cond-mat.str-el↗

arXiv2013

Strong coupling of Jahn-Teller distortion to oxygen-octahedron rotation and functional properties in epitaxially-strained orthorhombic LaMnO$_3$

First-principles calculations reveal a large cooperative coupling of Jahn-Teller (JT) distortion to oxygen-octahedron rotations in perovskite LaMnO$_3$. The combination of the two distortions is responsible for stabilizing the strongly orthorhombic $A$-AFM insulating ($I$) $Pbnm$ ground state relative to a metallic ferromagnetic (FM-$M$) phase. However, epitaxial strain due to coherent matching to a crystalline substrate can change the relative stability of the two states. In particular, coherent matching to a square-lattice substrate favors the less orthorhombic FM-$M$ phase, with the $A$-AFM phase stabilized at higher values of tensile epitaxial strain due to its larger volume per formula unit, resulting in a coupled magnetic and metal-insulator transition at a critical strain close to 1%. At the phase boundary, colossal magneto-resistance is expected. Tensile epitaxial strain enhances the JT distortion and opens the band gap in the $A$-AFM-$I$ $c$-$Pbnm$ phase, offering the opportunity for band-gap engineering. Compressive epitaxial strain induces an orientational transition within the FM-$M$ phase from $c$-$Pbnm$ to $ab$-$Pbnm$ with a change in the direction of the magnetic easy axis relative to the substrate, yielding strain-controlled magnetization at the phase boundary. The strong couplings between the JT distortion, the oxygen-octahedron rotations and the magnetic and electronic properties, and associated functional behavior, motivate interest in other orthorhombic $Pbnm$ perovskites with large JT distortions, which should also exhibit a rich variety of coupled magnetic, structural and electronic phase transitions driven by epitaxial strain.

cond-mat.str-el↗