arXiv subjects

Kartik Srinivasan

Publications and source records attributed to Kartik Srinivasan.

At least 127 records · Page 7Linked to original sources

arXiv2017

Quasi-phase-matched supercontinuum-generation in photonic waveguides

Supercontinuum generation in integrated photonic waveguides is a versatile source of broadband light, and the generated spectrum is largely determined by the phase-matching conditions. Here we show that quasi-phase-matching via periodic modulations of the waveguide structure provides a useful mechanism to control the evolution of ultrafast pulses and the supercontinuum spectrum. We experimentally demonstrate quasi-phase-matched supercontinuum to the TE20 and TE00 waveguide modes, which enhances the intensity of the SCG in specific spectral regions by as much as 20 dB. We utilize higher-order quasi-phase-matching (up to the 16th order) to enhance the intensity in numerous locations across the spectrum. Quasi-phase-matching adds a unique dimension to the design-space for SCG waveguides, allowing the spectrum to be engineered for specific applications.

physics.optics↗

arXiv2017

Kerr-microresonator solitons for accurate carrier-envelope-frequency stabilization

Carrier-envelope phase stabilization of optical pulses enables exquisitely precise measurements by way of direct optical-frequency synthesis, absolute optical-to-microwave phase conversion, and control of ultrafast waveforms. We report such phase stabilization for Kerr-microresonator frequency combs integrated on silicon chips, and verify their fractional-frequency inaccuracy at <3x10-16. Our work introduces an interlocked Kerr-comb configuration comprised of one silicon-nitride and one silica microresonator, which feature nearly harmonic repetition frequencies and can be generated with one laser. These frequency combs support an ultrafast-laser regime with few-optical-cycle, 1-picosecond-period soliton pulses and a total dispersive-wave-enhanced bandwidth of 170 THz, while providing a stable phase-link between the optical and microwave domains. To accommodate low-power and mobile application platforms, our phase-locked frequency-comb system operates with <250 mW of chip-coupled power. Our work establishes Kerr-microresonator combs as a viable technology for applications like optical-atomic timekeeping, optical synthesis, and related directions.

physics.optics↗

arXiv2017

Direct observation of nanofabrication influence on the optical properties of single self-assembled InAs/GaAs quantum dots

Single self-assembled InAs/GaAs quantum dots are a promising solid-state quantum technology, with which vacuum Rabi splitting, single-photon-level nonlinearities, and bright, pure, and indistinguishable single-photon generation having been demonstrated. For such achievements, nanofabrication is used to create structures in which the quantum dot preferentially interacts with strongly-confined optical modes. An open question is the extent to which such nanofabrication may also have an adverse influence, through the creation of traps and surface states that could induce blinking, spectral diffusion, and dephasing. Here, we use photoluminescence imaging to locate the positions of single InAs/GaAs quantum dots with respect to alignment marks with < 5 nm uncertainty, allowing us to measure their behavior before and after fabrication. We track the quantum dot emission linewidth and photon statistics as a function of distance from an etched surface, and find that the linewidth is significantly broadened (up to several GHz) for etched surfaces within a couple hundred nanometers of the quantum dot. However, we do not observe appreciable reduction of the quantum dot radiative efficiency due to blinking. We also show that atomic layer deposition can stabilize spectral diffusion of the quantum dot emission, and partially recover its linewidth.

cond-mat.mes-hall↗

arXiv2017

An Integrated-Photonics Optical-Frequency Synthesizer

Integrated-photonics microchips now enable a range of advanced functionalities for high-coherence applications such as data transmission, highly optimized physical sensors, and harnessing quantum states, but with cost, efficiency, and portability much beyond tabletop experiments. Through high-volume semiconductor processing built around advanced materials there exists an opportunity for integrated devices to impact applications cutting across disciplines of basic science and technology. Here we show how to synthesize the absolute frequency of a lightwave signal, using integrated photonics to implement lasers, system interconnects, and nonlinear frequency comb generation. The laser frequency output of our synthesizer is programmed by a microwave clock across 4 THz near 1550 nm with 1 Hz resolution and traceability to the SI second. This is accomplished with a heterogeneously integrated III/V-Si tunable laser, which is guided by dual dissipative-Kerr-soliton frequency combs fabricated on silicon chips. Through out-of-loop measurements of the phase-coherent, microwave-to-optical link, we verify that the fractional-frequency instability of the integrated photonics synthesizer matches the $7.0*10^{-13}$ reference-clock instability for a 1 second acquisition, and constrain any synthesis error to $7.7*10^{-15}$ while stepping the synthesizer across the telecommunication C band. Any application of an optical frequency source would be enabled by the precision optical synthesis presented here. Building on the ubiquitous capability in the microwave domain, our results demonstrate a first path to synthesis with integrated photonics, leveraging low-cost, low-power, and compact features that will be critical for its widespread use.

physics.app-ph↗

arXiv2017

Cascaded emission of single photons from the biexciton in monolayered WSe2

Monolayers of transition metal dichalcogenide materials emerged as a new material class to study excitonic effects in solid state, since they benefit from enormous coulomb correlations between electrons and holes. Especially in WSe2, sharp emission features have been observed at cryogenic temperatures, which act as single photon sources . Tight exciton localization has been assumed to induce an anharmonic excitation spectrum, however, the evidence of the hypothesis, namely the demonstration of a localized biexciton, is elusive. Here, we unambiguously demonstrate the existence of a localized biexciton in a monolayer of WSe2, which triggers an emission cascade of single photons. The biexciton is identified by its time-resolved photoluminescence, superlinearity and distinct polarization in micro-photoluminescence experiments. We evidence the cascaded nature of the emission process in a cross-correlation experiment, which yields a strong bunching behavior. Our work paves the way to a new generation of quantum optics experiments with two-dimensional semiconductors.

cond-mat.mtrl-sci↗

arXiv2017

Ultrabroadband supercontinuum generation and frequency-comb stabilization using on-chip waveguides with both cubic and quadratic nonlinearities

Using aluminum-nitride photonic-chip waveguides, we generate optical-frequency-comb supercontinuum spanning from 500 nm to 4000 nm with a 0.8 nJ seed pulse, and show that the spectrum can be tailored by changing the waveguide geometry. Since aluminum nitride exhibits both quadratic and cubic nonlinearities, the spectra feature simultaneous contributions from numerous nonlinear mechanisms: supercontinuum generation, difference-frequency generation, second-harmonic generation, and third-harmonic generation. As one application of integrating multiple nonlinear processes, we measure and stabilize the carrier-envelope-offset frequency of a laser comb by direct photodetection of the output light. Additionally, we generate ~0.3 mW in the 3000 nm to 4000 nm region, which is potentially useful for molecular spectroscopy. The combination of broadband light generation from the visible through the mid-infrared, combined with simplified self-referencing, provides a path towards robust comb systems for spectroscopy and metrology in the field.

physics.optics↗

arXiv2017

Self-referenced frequency combs using high-efficiency silicon-nitride waveguides

We utilize silicon-nitride waveguides to self-reference a telecom-wavelength fiber frequency comb through supercontinuum generation, using 11.3 mW of optical power incident on the chip. This is approximately ten times lower than conventional approaches using nonlinear fibers and is enabled by low-loss (<2 dB) input coupling and the high nonlinearity of silicon nitride, which can provide two octaves of spectral broadening with incident energies of only 110 pJ. Following supercontinuum generation, self-referencing is accomplished by mixing 780-nm dispersive-wave light with the frequency-doubled output of the fiber laser. In addition, at higher optical powers, we demonstrate f-to-3f self-referencing directly from the waveguide output by the interference of simultaneous supercontinuum and third harmonic generation, without the use of an external doubling crystal or interferometer. These hybrid comb systems combine the performance of fiber-laser frequency combs with the high nonlinearity and compactness of photonic waveguides, and should lead to low-cost, fully stabilized frequency combs for portable and space-borne applications.

physics.optics↗

arXiv2017

Photonic-chip supercontinuum with tailored spectra for precision frequency metrology

Supercontinuum generation using chip-integrated photonic waveguides is a powerful approach for spectrally broadening pulsed laser sources with very low pulse energies and compact form factors. When pumped with a mode-locked laser frequency comb, these waveguides can coherently expand the comb spectrum to more than an octave in bandwidth to enable self-referenced stabilization. However, for applications in frequency metrology and precision spectroscopy, it is desirable to not only support self-referencing, but also to generate low-noise combs with customizable broadband spectra. In this work, we demonstrate dispersion-engineered waveguides based on silicon nitride that are designed to meet these goals and enable precision optical metrology experiments across large wavelength spans. We perform a clock comparison measurement and report a clock-limited relative frequency instability of $3.8\times10^{-15}$ at $τ= 2$ seconds between a 1550 nm cavity-stabilized reference laser and NIST's calcium atomic clock laser at 657 nm using a two-octave waveguide-supercontinuum comb.

physics.optics↗

arXiv2016

Deterministic implementation of a bright, on-demand single photon source with near-unity indistinguishability via quantum dot imaging

Deterministic techniques enabling the implementation and engineering of bright and coherent solid-state quantum light sources are key for the reliable realization of a next generation of quantum devices. Such a technology, at best, should allow one to significantly scale up the number of implemented devices within a given processing time. In this work, we discuss a possible technology platform for such a scaling procedure, relying on the application of nanoscale quantum dot imaging to the pillar microcavity architecture, which promises to combine very high photon extraction efficiency and indistinguishability. We discuss the alignment technology in detail, and present the optical characterization of a selected device which features a strongly Purcell-enhanced emission output. This device, which yields an extraction efficiency of $η=(49\pm4)~\%$, facilitates the emission of photons with $(94\pm2.7)~\%$ indistinguishability.

physics.optics↗

arXiv2016

Cryogenic photoluminescence imaging system for nanoscale positioning of single quantum emitters

We report a photoluminescence imaging system for locating single quantum emitters with respect to alignment features. Samples are interrogated in a 4~K closed-cycle cryostat by a high numerical aperture (NA=0.9, 100$\times$ magnification) objective that sits within the cryostat, enabling high efficiency collection of emitted photons without image distortions due to the cryostat windows. The locations of single InAs/GaAs quantum dots within a $>50$~$μ$m~$\times$~50~$μ$m field of view are determined with $\approx4.5$~nm uncertainty (one standard deviation) in a 1~s long acquisition. The uncertainty is determined through a combination of a maximum likelihood estimate for localizing the quantum dot emission, and a cross-correlation method for determining the alignment mark center. This location technique can be an important step in the high-throughput creation of nanophotonic devices that rely upon the interaction of highly confined optical modes with single quantum emitters.

quant-ph↗

arXiv2016

Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices

We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots (density <0.01 um^(-2) capped by a 95 nm GaAs layer, and emitting around 950 nm. By combining optical and scanning probe characterization techniques, we determine the position of single quantum dots with respect to comparatively large (100 nm to 1000 nm in-plane dimension) topographic features. We find that quantum dots often appear (>25% of the time) in the vicinity of these features, but generally do not exhibit significant differences in their non-resonantly pumped emission spectra in comparison to quantum dots appearing in defect-free regions. This behavior is observed across multiple wafers produced in different growth chambers. Our characterization approach is relevant to applications in which single quantum dots are embedded within nanofabricated photonic devices, where such large surface features can affect the interaction with confined optical fields and the quality of the single-photon emission. In particular, we anticipate using this approach to screen quantum dots not only based on their optical properties, but also their surrounding surface topographies.

cond-mat.mes-hall↗

arXiv2016

Stably accessing octave-spanning microresonator frequency combs in the soliton regime

Microresonator frequency combs can be an enabling technology for optical frequency synthesis and timekeeping in low size, weight, and power architectures. Such systems require comb operation in low-noise, phase-coherent states such as solitons, with broad spectral bandwidths (e.g., octave-spanning) for self-referencing to detect the carrier-envelope offset frequency. However, stably accessing such states is complicated by thermo-optic dispersion. For example, in the Si3N4 platform, precisely dispersion-engineered structures can support broadband operation, but microsecond thermal time constants have necessitated fast pump power or frequency control to stabilize the solitons. In contrast, here we consider how broadband soliton states can be accessed with simple pump laser frequency tuning, at a rate much slower than the thermal dynamics. We demonstrate octave-spanning soliton frequency combs in Si3N4 microresonators, including the generation of a multi-soliton state with a pump power near 40 mW and a single-soliton state with a pump power near 120 mW. We also develop a simplified two-step analysis to explain how these states are accessed in a thermally stable way without fast control of the pump laser, and outline the required thermal properties for such operation. Our model agrees with experimental results as well as numerical simulations based on a Lugiato-Lefever equation that incorporates thermo-optic dispersion. Moreover, it also explains an experimental observation that a member of an adjacent mode family on the red-detuned side of the pump mode can mitigate the thermal requirements for accessing soliton states.

physics.optics↗

arXiv2016

A heterogeneous III-V/silicon integration platform for on-chip quantum photonic circuits with single quantum dot devices

Photonic integration is an enabling technology for photonic quantum science, offering greater scalability, stability, and functionality than traditional bulk optics. Here, we describe a scalable, heterogeneous III-V/silicon integration platform to produce Si$_3$N$_4$ photonic circuits incorporating GaAs-based nanophotonic devices containing self-assembled InAs/GaAs quantum dots. We demonstrate pure singlephoton emission from individual quantum dots in GaAs waveguides and cavities - where strong control of spontaneous emission rate is observed - directly launched into Si$_3$N$_4$ waveguides with > 90 % efficiency through evanescent coupling. To date, InAs/GaAs quantum dots constitute the most promising solidstate triggered single-photon sources, offering bright, pure and indistinguishable emission that can be electrically and optically controlled. Si$_3$N$_4$ waveguides offer low-loss propagation, tailorable dispersion and high Kerr nonlinearities, desirable for linear and nonlinear optical signal processing down to the quantum level. We combine these two in an integration platform that will enable a new class of scalable, efficient and versatile integrated quantum photonic devices

physics.optics↗

arXiv2016

Efficient fiber-coupled single-photon source based on quantum dots in a photonic-crystal waveguide

Many photonic quantum information processing applications would benefit from a high brightness, fiber-coupled source of triggered single photons. Here, we present a fiber-coupled photonic-crystal waveguide single-photon source relying on evanescent coupling of the light field from a tapered out-coupler to an optical fiber. A two-step approach is taken where the performance of the tapered out-coupler is recorded first on an independent device containing an on-chip reflector. Reflection measurements establish that the chip-to-fiber coupling efficiency exceeds 80 %. The detailed characterization of a high-efficiency photonic-crystal waveguide extended with a tapered out-coupling section is then performed. The corresponding overall single-photon source efficiency is 10.9 % $\pm$ 2.3 %, which quantifies the success probability to prepare an exciton in the quantum dot, couple it out as a photon in the waveguide, and subsequently transfer it to the fiber. The applied out-coupling method is robust, stable over time, and broadband over several tens of nanometers, which makes it a highly promising pathway to increase the efficiency and reliability of planar chip-based single-photon sources.

quant-ph↗

arXiv2016

Acousto-optic and opto-acoustic modulation in piezo-optomechanical circuits

Acoustic wave devices provide a promising chip-scale platform for efficiently coupling radio frequency (RF) and optical fields. Here, we use an integrated piezo-optomechanical circuit platform that exploits both the piezoelectric and photoelastic coupling mechanisms to link 2.4 GHz RF waves to 194 THz (1550 nm) optical waves, through coupling to propagating and localized 2.4 GHz acoustic waves. We demonstrate acousto-optic modulation, resonant in both the optical and mechanical domains, in which waveforms encoded on the RF carrier are mapped to the optical field. We also show opto-acoustic modulation, in which the application of optical pulses gates the transmission of propagating acoustic waves. The time-domain characteristics of this system under both pulsed RF and pulsed optical excitation are considered in the context of the different physical pathways involved in driving the acoustic waves, and modeled through the coupled mode equations of cavity optomechanics.

physics.optics↗

arXiv2015

Imaging Nanophotonic Modes of Microresonators using a Focused Ion Beam

Optical microresonators have proven powerful in a wide range of applications, including cavity quantum electrodynamics, biosensing, microfludics, and cavity optomechanics. Their performance depends critically on the exact distribution of optical energy, confined and shaped by the nanoscale device geometry. Near-field optical probes can image this distribution, but the physical probe necessarily perturbs the near field, which is particularly problematic for sensitive high quality factor resonances. We present a new approach to mapping nanophotonic modes that uses a controllably small and local optomechanical perturbation introduced by a focused lithium ion beam. An ion beam (radius about 50 nm) induces a picometer-scale dynamic deformation of the resonator surface, which we detect through a shift in the optical resonance wavelength. We map five modes of a silicon microdisk resonator (Q > 20,000) with both high spatial and spectral resolution. Our technique also enables in-situ observation of ion implantation damage and relaxation dynamics in a silicon lattice.

physics.optics↗

arXiv2015

Quantum Electromechanics on Silicon Nitride Nanomembranes

We present a platform based upon silicon nitride nanomembranes for integrating superconducting microwave circuits with planar acoustic and optical devices such as phononic and photonic crystals. Utilizing tensile stress and lithographic patterning of a silicon nitride nanomembrane we are able to reliably realize planar capacitors with vacuum gap sizes down to $s \approx 80$nm. In combination with spiral inductor coils of micron pitch, this yields microwave ($\approx 8$GHz) resonant circuits of high impedance ($Z_{0} \approx 3.4$k$Ω$) suitable for efficient electromechanical coupling to nanoscale acoustic structures. We measure an electromechanical vacuum coupling rate of $g_{0}/2π= 41.5$~Hz to the low frequency ($4.48$MHz) global beam motion of a patterned phononic crystal nanobeam, and through parametric microwave driving reach a backaction cooled mechanical mode occupancy as low as $n_{m} = 0.58$.

cond-mat.mes-hall↗

arXiv2015

Efficient and low-noise single-photon-level frequency conversion interfaces using silicon nanophotonics

Optical frequency conversion has applications ranging from tunable light sources to telecommunications-band interfaces for quantum information science. Here, we demonstrate efficient, low-noise frequency conversion on a nanophotonic chip through four-wave-mixing Bragg scattering in compact (footprint < 0.5 x 10^-4 cm^2) Si3N4 microring resonators. We investigate three frequency conversion configurations: (1) spectral translation over a few nanometers within the 980 nm band, (2) upconversion from 1550 nm to 980 nm, and (3) downconversion from 980 nm to 1550 nm. With conversion efficiencies ranging from 25 % for the first process to > 60 % for the last two processes, a signal conversion bandwidth > 1 GHz, < 60 mW of continuous-wave pump power needed, and background noise levels between a few fW and a few pW, these devices are suitable for quantum frequency conversion of single photon states from InAs quantum dots. Simulations based on coupled mode equations and the Lugiato-Lefever equation are used to model device performance, and show quantitative agreement with measurements.

physics.optics↗