arXiv subjects

Kassem Alassaad

Publications and source records attributed to Kassem Alassaad.

4 recordsLinked to original sources

arXiv2019

Nanodiamond integration with photonic devices

We discuss the progress in integration of nanodiamonds with photonic devices for quantum optics applications. Experimental results in GaP, SiO2 and SiC-nanodiamond platforms show that various regimes of light and matter interaction can be achieved by engineering color center systems through hybrid approaches. We present our recent results on the growth of color center-rich nanodiamond on prefabricated 3C-SiC microdisk resonators. These hybrid devices achieve up to five-fold enhancement of diamond color center light emission and can be employed for integrated quantum photonics.

cond-mat.mes-hall↗

arXiv2014

Visible Photoluminescence from Cubic (3C) Silicon Carbide Microdisks Coupled to High Quality Whispering Gallery Modes

We present the design, fabrication and characterization of cubic (3C) silicon carbide microdisk resonators with high quality factor modes at visible and near infrared wavelengths (600 - 950 nm). Whispering gallery modes with quality factors as high as 2,300 and corresponding mode volumes V ~ 2 (λ/n)^3 are measured using laser scanning confocal microscopy at room temperature. We obtain excellent correspondence between transverse-magnetic (TM) and transverse-electric (TE) polarized resonances simulated using Finite Difference Time Domain (FDTD) method and those observed in experiment. These structures based on ensembles of optically active impurities in 3C-SiC resonators could play an important role in diverse applications of nonlinear and quantum photonics, including low power optical switching and quantum memories.

physics.optics↗

arXiv2014

Ge incorporation inside 4H-SiC during Homoepitaxial growth by chemical vapor deposition

In this work, we report on the addition of GeH4 gas during homoepitaxial growth of 4H-SiC by chemical vapour deposition. Ge introduction does not affect dramatically the surface morphology and defect density though it is accompanied with Ge droplets accumulation at the surface. The Ge incorporation level inside the 4H-SiC matrix, ranging from few 1017 to few 1018 at.cm-3, was found to be mainly affected by the growth temperature and GeH4 flux. Other growth parameters like C/Si ratio, polarity, or off-orientation did not show any significant influence. On the other hand, adding GeH4 led to the increase of the intentional n type doping level by a factor of 2 to 5 depending on the C/Si ratio in the gas phase.

cond-mat.mtrl-sci↗

arXiv2013

Photonic Crystal Cavities in Cubic (3C) Polytype Silicon Carbide Films

We present the design, fabrication, and characterization of high quality factor and small mode volume planar photonic crystal cavities from cubic (3C) thin films (thickness ~ 200 nm) of silicon carbide (SiC) grown epitaxially on a silicon substrate. We demonstrate cavity resonances across the telecommunications band, with wavelengths from 1,250 - 1,600 nm. Finally, we discuss possible applications in nonlinear optics, optical interconnects, and quantum information science.

physics.optics↗