arXiv subjects

Katie L. Moore

Publications and source records attributed to Katie L. Moore.

3 recordsLinked to original sources

arXiv2026

Rapid Atmospheric Vapor Deposition of H:In2O3 Transparent Conducting Oxide Thin Films

Transparent conducting oxides (TCOs) are essential for the optoelectronics industry, but there is a critical gap in cost-effective methods to rapidly deposit low sheet resistance, high transmittance films without damaging delicate materials, including emerging soft semiconductors like metal-halide perovskites. In this work, atmospheric pressure chemical vapor deposition (AP-CVD) is used to synthesise H:In2O3 films with 7.20+/-0.01 Ohm/sq sheet resistance (0.50+/-0.06 mOhm.cm resistivity) and transmittance up to 89% in the near-infrared (NIR), surpassing commercial sputter-deposited indium tin oxide. The growth rate is 40x higher than atomic layer deposition (ALD), and the AP-CVD films are fully processed under atmospheric conditions at only 140 C. Comparison of secondary ion mass spectrometry and time-of-flight elastic recoil detection analysis with changes in carrier concentration indicate that H dopants are introduced from the water oxidant. There is an increase in mobility form 40+/-10 cm2/Vs to 160+/-30 cm2/Vs when changing from O2 to H2O as the oxidant, which is attributed to H dopants passivating oxygen vacancies that act as carrier scattering centers. This work establishes AP-CVD as a promising method for manufacturing high figure-of-merit TCOs in a rapid, scalable and cost-effective manner, using mild growth conditions compatible with thermally-sensitive materials.

cond-mat.mtrl-sci↗

arXiv2024

Towards establishing best practice in the analysis of hydrogen and deuterium by atom probe tomography

As hydrogen is touted as a key player in the decarbonization of modern society, it is critical to enable quantitative H analysis at high spatial resolution, if possible at the atomic scale. Indeed, H has a known deleterious impact on the mechanical properties (strength, ductility, toughness) of most materials that can hinder their use as part of the infrastructure of a hydrogen-based economy. Enabling H mapping, including local hydrogen concentration analyses at specific microstructural features, is essential for understanding the multiple ways that H affect the properties of materials, including for instance embrittlement mechanisms and their synergies, but also spatial mapping and quantification of hydrogen isotopes is essential to accurately predict tritium inventory of future fusion power plants, ensuring their safe and efficient operation for example. Atom probe tomography (APT) has the intrinsic capabilities for detecting hydrogen (H), and deuterium (D), and in principle the capacity for performing quantitative mapping of H within a material's microstructure. Yet the accuracy and precision of H analysis by APT remain affected by the influence of residual hydrogen from the ultra-high vacuum chamber that can obscure the signal of H from within the material, along with a complex field evaporation behavior. The present article reports the essence of discussions at a focused workshop held at the Max-Planck Institute for Sustainable Materials in April 2024. The workshop was organized to pave the way to establishing best practices in reporting APT data for the analysis of H. We first summarize the key aspects of the intricacies of H analysis by APT and propose a path for better reporting of the relevant data to support interpretation of APT-based H analysis in materials.

cond-mat.mtrl-sci↗

arXiv2023

Highly ${ }^{28} \mathrm{Si}$ Enriched Silicon by Localised Focused Ion Beam Implantation

Solid-state spin qubits within silicon crystals at mK temperatures show great promise in the realisation of a fully scalable quantum computation platform. Qubit coherence times are limited in natural silicon owing to coupling to the isotope ${ }^{29} \mathrm{Si}$ which has a non-zero nuclear spin. This work presents a method for the depletion of ${ }^{29} \mathrm{Si}$ in localised volumes of natural silicon wafers by irradiation using a 45 keV ${ }^{28} \mathrm{Si}$ focused ion beam with fluences above $1 \times 10^{19} \, \mathrm{ions} \, \mathrm{cm}^{-2}$. Nanoscale secondary ion mass spectrometry analysis of the irradiated volumes shows unprecedented quality enriched silicon that reaches a minimal residual ${ }^{29} \mathrm{Si}$ value of 2.3 $\pm$ 0.7 ppm and with residual C and O comparable to the background concentration in the unimplanted wafer. Transmission electron microscopy lattice images confirm the solid phase epitaxial re-crystallization of the as-implanted amorphous enriched volume extending over 200 nm in depth upon annealing. The ease of fabrication, requiring only commercially available natural silicon wafers and ion sources, opens the possibility for co-integration of qubits in localised highly enriched volumes with control circuitry in the surrounding natural silicon for large-scale devices.

cond-mat.mtrl-sci↗