arXiv subjects

Katsumi Tanigaki

Publications and source records attributed to Katsumi Tanigaki.

42 records · Page 3Linked to original sources

arXiv2012

Observation of Negative Contact Resistances in Graphene Field-Effect Transistors

The gate-voltage (VG) dependence of the contact resistance (RC) in graphene field-effect transistors is characterized by the transmission line model. The RC-VG characteristics of Ag, Cu, and Au contacts display a dip around the charge neutrality point, and become even negative with Ag contacts. The dip structure is well reproduced by a model calculation that considers a metal-contact-induced potential variation near the metal contact edges. The apparently negative RC originates with the carrier doping from the metal contacts to the graphene channel and appears when the doping effect is more substantial than the actual contact resistance precisely at the contacts. The negative RC can appear at the metal contacts to Dirac-cone systems such as graphene.

cond-mat.mtrl-sci↗

arXiv2011

Evidence for line nodes in the energy gap of the overdoped Ba(Fe$_{1-x}$Co$_{x}$)$_{2}$As$_{2}$ from low-temperature specific heat measurements

Low-temperature specific heat (SH) is measured on Ba(Fe$_{1-x}$Co$_{x}$)$_2$As$_2$ single crystals in a wide doping region under different magnetic fields. For the overdoped sample, we find the clear evidence for the presence of $T^2$ term in the data, which is absent both for the underdoped and optimal doped samples, suggesting the presence of line nodes in the energy gap of the overdoped samples. Moreover, the field induced electron specific heat coefficient $Δγ(H)$ increases more quickly with the field for the overdoped sample than the underdoped and optimal doped ones, giving another support to our arguments. Our results suggest that the superconducting gap(s) in the present system may have different structures strongly depending on the doping regions.

cond-mat.supr-con↗

arXiv2011

Electron and hole Dirac cone states in-pairs in Ba(FeAs)$_2$ confirmed by magnetoresistance

The quantum transport of Dirac cone states in the iron pnictide Ba(FeAs)$_2$ with a d-\,multiband system is studied by using single crystal samples. The transverse magnetoresistance develops linearly against magnetic field at low temperatures. The transport phenomena are interpreted in terms of the 0$^{th}$ Landau level by applying the theory predicted by Abrikosov. The results of the semiclassical analyses of a two carrier system under low magnetic field limit show that both electron and hole reside as the high mobility states, being indicative to the fact that both electron- and hole Dirac cone states should be taken into account in pairs for having the real interpretation of low temperature electronic states in iron pnictides, being in contrast to the previous reports.

cond-mat.str-el↗

arXiv2011

Determination of Carrier Type Doped from Metal Contacts to Graphene by Channel-Length-Dependent Shift of Charge Neutrality Points

A method for determining the type of charge carrier, electron or hole, which is transferred from metal contacts to graphene, is described. The Dirac point is found to shift toward more negative (positive) gate voltages for electron (hole) doping by shortening of the interelectrode spacing. The shift of the Dirac point is accompanied by an enhancement of the electron-hole conductivity asymmetry. Experimentally determined carrier types may be explained in terms of the metal work functions modified by interactions with graphene.

cond-mat.mtrl-sci↗

arXiv2010

Charge-density depinning at metal contacts of graphene field-effect transistors

An anomalous distortion is often observed in the transfer characteristics of graphene field-effect transistors. We fabricate graphene transistors with ferromagnetic metal electrodes, which reproducibly display distorted transfer characteristics, and show that the distortion is caused by metal-graphene contacts with no charge-density pinning effect. The pinning effect, where the gate voltage cannot tune the charge density of graphene at the metal electrodes, has been experimentally observed; however, a pinning-free interface is achieved with easily-oxidizable metals. The distortion should be a serious problem for flexible electronic devices with graphene.

cond-mat.mtrl-sci↗

arXiv2010

Superconductivity induced by doping Platinum in BaFe2As2

By substituting Fe with the 5d-transition metal Pt in BaFe2As2, we have successfully synthesized the superconductors BaFe2-xPtxAs2. The systematic evolution of the lattice constants indicates that the Fe ions were successfully replaced by Pt ions. By increasing the doping content of Pt, the antiferromagnetic order and structural transition of the parent phase is suppressed and superconductivity emerges at a doping level of about x = 0.02. At a doping level of x = 0.1, we get a maximum transition temperature Tc of about 25 K. The synchrotron powder x-ray diffraction shows that the resistivity anomaly is in good agreement with the structural transition. The superconducting transitions at different magnetic fields were also measured at the doping level of about x = 0.1, yielding a slope of -dHc2/dT = 5.4 T/K near Tc. A phase diagram was established for the Pt doped 122 system. Our results suggest that superconductivity can also be easily induced in the FeAs family by substituting the Fe with Pt, with almost the similar maximum transition temperatures as doping Ni, Co, Rh and Ir.

cond-mat.supr-con↗