arXiv subjects

Katsumi Tanigaki

Publications and source records attributed to Katsumi Tanigaki.

At least 37 records · Page 2Linked to original sources

arXiv2018

Itinerant antiferromagnetic BaMn$_2$Pn$_2$'s showing both negative and positive magnetoresistances

We report the discovery of a novel giant magnetoresistance (GMR) phenomenon in a family of BaMn$_{2}$Pn$_{2}$ antiferromagnets (Pn stands for P, As, Sb, and Bi) with a parity-time symmetry. The resistivities of these materials are reduced by $60$ times in magnetic fields ($\vec{H}$'s), thus yielding the GMR of about $-98\%$. The GMR changes systematically along with the Pn elements, hinting that its origin is the spin orbit coupling (SOC) and/or $d$-$p$ orbital hybridization. A positive MR component emerging on top of the negative GMR at low temperatures suggests an orbital-sensitive magnetotransport as $\vec{H}$ suppresses the conduction of the electron-like carriers in the $d$-like band but enhances those of hole-like ones in the $d$-$p$ hybridized band. The anisotropy of the GMR reveals that the electrical conductivity is extremely sensitive to the minute changes in the direction of the antiferromagnetic moments induced by the parity-time breaking $\vec{H}$, which seems to be associated with a magnetoelectric effect in the dynamic regime of conduction electrons. We attribute the observed GMR to the non-trivial low energy band of BMPn's, which is governed by the parity-time symmetry and an magnetic hexadecapole ordering.

cond-mat.str-el↗

arXiv2018

Manifestation of vibronic dynamics in infrared spectra of Mott insulating fullerides

The fine structure and temperature evolution of infrared spectra have been intensively used to probe the nature of Jahn-Teller dynamics in correlated materials. At the same time, theoretical framework to adequately extract the information on the complicated vibronic dynamics from infrared spectra is still lacking. In this work, the first-principles theory of the infrared spectra of dynamical Jahn-Teller system is developed and applied to the Mott-insulating Cs$_3$C$_{60}$. With the calculated coupling parameters for Jahn-Teller and infrared active vibrational modes, the manifestation of the dynamical Jahn-Teller effect in infrared spectra is elucidated. In particular, the temperature evolution of the infrared line shape is explained. The transformation of the latter into Fano resonance type in metallic fulleride is discussed on the basis of obtained results.

cond-mat.str-el↗

arXiv2018

Universal van der Waals-type interactions in rattler containing cage materials

Rattling motion of fillers in cage materials has been of great interest for their import roles in superconductivity and thermoelectric applications. The standing waves of the rattling oscillations are normally lower in energy than the propagating waves of the acoustic phonons, thus exert large influences on the configuration of phonon dispersions as well as the associated thermal and electrical properties. Although it has been extensively studied, the origin of the low energy soft modes is still not clear. In the present paper, we show that van der Waals-type interactions are predominant between fillers and their surrounding cage frameworks, which explains the origin of the low energy modes in cage materials as a universal rule. Mass, free space and chemical environment of guest atoms are shown to be the most important factors to determine the three dimensional van der Waals-type interactions. The present work is mainly focused on type-I clathrates, skutterudites and pyrochlores.

cond-mat.mtrl-sci↗

arXiv2017

Three-dimensional porous graphene networks expand graphene-based electronic device applications

Graphene with excellent 2D characters has been required to expand their potentials for meeting applicational demands in recent years. As one avenue, several approaches for fablicating 3D porous graphene network structures have been developed to realize multi-functional graphene materials with 2D graphene. Here we overview characteristics of 3D porous graphene for future electronic device applications along with physical insights into "2D to 3D graphene", where the characters of 2D graphene such as massless Dirac fermions are well preserved. The present review thus summarizes recent 3D porous graphene studies with a perspective for providing new and board graphene electronic device applications.

cond-mat.mtrl-sci↗

arXiv2017

Large-Area and Transferred High-Quality Three-Dimensional Topological Insulator Bi2-xSbxTe3-ySey Ultrathin Film by Catalyst-Free Physical Vapor Deposition

Uniform and large area synthesis of bulk insulating ultrathin films is an important subject toward applications of a surface of three dimensional topological insulators (3D-TIs) in various electronic devices. Here we report epitaxial growth of bulk insulating three dimensional topological insulator (3D-TI) Bi2-xSbxTe3-ySey (BSTS) ultrathin films, ranging from a few quintuple to several hundreds of layaers, on mica in a large-area (1 cm2) via catalyst free physical vapor deposition. These films can nondestructively be exfoliated using deionized water and transferred to various kinds of substrates as desired. The transferred BSTS thin films show good ambipolar characteristics as well as well defined quantum oscillations arising from the topological surface states. Carrier mobility of 2500-5100 cm2(Vs)-1 is comparable to the high quality bulk BSTS single crystal. Moreover, tunable electronic states from the massless to the massive Dirac fermion were observed with a decrease in the film thickness. Both the feasible large area synthesis and the reliable film transfer process can promise that BSTS ultrathin films will pave a route to many applications of 3D-TIs.

cond-mat.mes-hall↗

arXiv2017

Thermoelectric properties of 3D topological insulator: Direct observation of topological surface and its gap opened states

We report thermoelectric (TE) properties of topological surface Dirac states (TSDS) in three-dimensional topological insulators (3D-TIs) purely isolated from the bulk by employing single crystal Bi$_{2-x}$Sb$_x$Te$_{3-y}$Se$_y$ films epitaxially grown in the ultrathin limit. Two intrinsic nontrivial topological surface states, a metallic TSDS (m-TSDS) and a gap-opened semiconducting topological state (g-TSDS), are successfully observed by electrical transport, and important TE parameters (electrical conductivity ($σ$), thermal conductivity ($κ$), and thermopower ($S$)) are accurately determined. Pure m-TSDS gives $S$=-44 μVK$^{-1}$, which is an order of magnitude higher than those of the conventional metals and the value is enhanced to -212 μVK$^{-1}$ for g-TSDS. It is clearly shown that the semi-classical Boltzmann transport equation (SBTE) in the framework of constant relaxation time ($τ$) most frequently used for conventional analysis cannot be valid in 3D-TIs and strong energy dependent relaxation time $τ(E)$ beyond the Born approximation is essential for making intrinsic interpretations. Although $σ$ is protected on the m-TSDS, $κ$ is greatly influenced by the disorder on the topological surface, giving a dissimilar effect between topologically protected electronic conduction and phonon transport.

cond-mat.mtrl-sci↗

arXiv2016

Electric Properties of Dirac Fermions Captured into 3D Nanoporous Graphene Networks

Graphene, as a promising material of post-silicon electronics, opens a new paradigm for the novel electronic properties and device applications. On the other hand, the 2D feature of graphene makes it technically challenging to be integrated into 3D transistors with a sufficient processor capacity. Although there are many attempts to assemble 2D graphene into 3D structures, the characteristics of massless Dirac fermions cannot be well preserved in these materials for transistor applications. Here we report a high-performance graphene transistor by utilizing 3D nanoporous graphene which is comprised of an interconnected single graphene sheet and a commodious open porosity to infuse an ionic liquid for a tunable electronic state by applying electric fields. The 3D nanoporous graphene transistor, with high carrier mobility of 5000-7500 cm$^2$V$^{-1}$s$^{-1}$, exhibits two to three orders of magnitude higher electric conductance and capacitance than those of 2D graphene devices, along with preserved ambipolor electronic nature of Dirac cones. Moreover, the 3D graphene networks with Dirac fermions turn out to exhibit a unique nonlinear Hall resistance in a wide range of the gate voltages. The high quality 3D nanoporous graphene EDLT may open a new field for utilizing Dirac fermions in 3D network structures for various fundamental and practical applications.

cond-mat.mtrl-sci↗

arXiv2016

In-plane Topological p-n Junction in the Three-Dimensional Topological Insulator Bi$_{2-x}$Sb$_x$Te$_{3-y}$Se$_y$

A topological p-n junction (TPNJ) is an important concept to control spin and charge transport on a surface of three dimensional topological insulators (3D-TIs). Here we report successful fabrication of such TPNJ on a surface of 3D-TI Bi$_{2-x}$Sb$_x$Te$_{3-y}$Se$_y$ thin films and experimental observation of the electrical transport. By tuning the chemical potential of n-type topological Dirac surface of BSTS on its top half by employing tetrafluoro-7,7,8,8-tetracyanoquinodimethane as an organic acceptor molecule, a half surface can be converted to p-type with leaving the other half side as the opposite n-type, and consequently TPNJ can be created. By sweeping the back-gate voltage in the field effect transistor structure, the TPNJ was controlled both on the bottom and the top surfaces. A dramatic change in electrical transport observed at the TPNJ on 3D-TI thin films promises novel spin and charge transport of 3D-TIs for future spintronics.

cond-mat.mtrl-sci↗

arXiv2016

Non-Fermi liquid behavior of electrical resistivity close to the nematic critical point in Fe$_{1-x}$Co$_x$Se and FeSe$_{1-y}$S$_y$

Temperature dependence of resistivity of single crystals of Fe$_{1-x}$Co$_x$Se and FeSe$_{1-y}$S$_y$ is studied in detail under zero and high magnetic field (magnetoresistance), the latter of which enables to monitor the temperature ($T$) evolution of resistivity below the onset of superconducting transition temperature ($T_{\rm c}$). In FeSe$_{1-y}$S$_y$, $T$-linear dependence of resistivity is prominent in $y$ = 0.160 below 40 K, whereas it changes to a Fermi-liquid(FL)-like $T^2$ one below 10 K in $y$ = 0.212. These suggest that the quantum critical point (QCP) originating from the electronic nematicity resides around $y$ = 0.160 and the fluctuation in QCP gives rise anomalous $T$-linear dependence in resistivity in a wide $T$ range. In Fe$_{1-x}$Co$_x$Se, resistivity gradually changes from linear- to quadratic- $T$-dependent one at low temperatures in the range between $x$ = 0.036 and 0.075. These could be interpreted by scenarios of both the nematic QCP and the crossover in the ground states between the orthorhombic nematic phase and the tetragonal phase. The anomalies found as $T$-linear resistivity are discussed in terms of orbital and spin fluctuation arising from the nematic QCP.

cond-mat.supr-con↗

arXiv2015

Gap Structure of the Overdoped Iron-Pnictide Superconductor Ba(Fe$_{0.942}$Ni$_{0.058}$)$_{2}$As$_{2}$: A Low-Temperature Specific-Heat Study

Low-temperature specific heat (SH) is measured on the postannealed Ba(Fe_{1-x}Ni_x)_2As_2 single crystal with x = 0.058 under different magnetic fields. The sample locates on the overdoped sides and the critical transition temperature is determined to be 14.8 K by both the magnetization and SH measurements. A simple and reliable analysis shows that, besides the phonon and normal electronic contributions, a clear T2 termemerges in the low temperature SH data.Our observation is similar to that observed in the Co-doped system in our previous work and is consistent with the theoretical prediction for a superconductor with line nodes in the energy gap.

cond-mat.supr-con↗

arXiv2015

Competitive interfacial charge transfer to graphene from the electrode contacts and surface adsorbates

Charge transfer (CT) at metal-graphene contacts induces a potential variation from the contact edges that extends to ~1 micrometer. Potential variations with a similar length should be observed around charge-transferring surface adsorbates. Thus, it is expected that a competition exists between these two CT sources when one source is within ~1 micrometer from the other. In this letter, weakly-coupled Ni contacts and 7,7,8,8-tetracyanoquinodimethan molecules are employed as the CT sources to investigate their possible competition. The CT from the molecules adsorbed only in the channel region change the charge density of the graphene in the under-contact regions. The extent of the CT effect in the under-contact region is as long as ~4 micrometers. The considerably long CT is ascribed to the high effective dielectric constant of the graphene under the contacts, resulting from a thin interfacial NiOx layer containing carbon impurities acquired from the graphene.

cond-mat.mtrl-sci↗

arXiv2014

Van der Waals epitaxial growth of topological insulator Bi$_{2-x}$Sb$_x$Te$_{3-y}$Se$_y$ ultrathin nanoplate on electrically insulating fluorophlogopite mica

We report the growth of high quality Bi$_{2-x}$Sb$_x$Te$_{3-y}$Se$_y$ ultrathin nanoplates (BSTS-NPs) on an electrically insulating fluorophlogopite mica substrate using a catalyst-free vapor solid method. Under an optimized pressure and suitable Ar gas flow rate, we control the thickness, the size and the composition of BSTS-NPs. Raman spectra showing systematic change indicate that the thicknesses and compositions of BSTS-NPs are indeed accurately controlled. Electrical transport demonstrates that a robust Dirac cone carrier transport in BSTS-NPs. Since BSTS-NPs provide superior dominant surface transport of the tunable Dirac cone surface states with negligible contribution of the conduction of the bulk states, BSTS-NPs provide an ideal platform to explore intrinsic physical phenomena as well as technological applications of 3-dimensional topological insulators in the future.

cond-mat.mtrl-sci↗

arXiv2014

Path of the current flow at the metal contacts of graphene field-effect transistors with distorted transfer characteristics

Graphene field-effect transistors with source/drain contacts made of metals that can be easily oxidized such as ferromagnetic metals often display a double dip structure in the transfer characteristics because of charge density depinning at the contacts. Generally, transfer characteristics of field-effect transistors show no dependence on the length of the source/drain contacts because charge carrier injection occurs mainly at the edges of the contact. However, the shape of the transfer characteristics of devices fabricated using Ni contacts is found to be dependent on the length of the contact. This peculiar behavior was attributed to charge carrier injection from near the center of the contacts. This is because of oxygen diffusion and the resultant formation of an interfacial oxide layer of non-uniform thickness. The observed contact length dependent transfer characteristics were reproduced using a model calculation that includes charge carrier injection from the center of the electrode and subsequent charge transport underneath the metal contact.

cond-mat.mtrl-sci↗

arXiv2014

Mobility spectrum analytical approach for intrinsic band picture of Ba(FeAs)$_2$

Unconventional high temperature superconductivity as well as three-dimensional bulk Dirac cone quantum states arising from the unique d-orbital topology has been a recent priority research area in physics. In iron pnictide compounds, although transport phenomena arisen from this multiple band Fermi surface are intriguing and scientifically important, they still do not give an adequate matching to neither experimental observations on the band picture nor theoretical calculations and a debate continues. Here we describe a new analytical approach of mobility spectrum, in which the carrier number is conveniently described as a function of mobility without any hypothesis about the number of carriers, on both longitudinal and transverse transport of high quality single crystal Ba(FeAs)$_2$ in a wide range of magnetic field. We show that the major numbers of carriers reside in large parabolic hole and electron pockets with very different topology as well as remarkably different mobility spectra, while the minor number of Dirac carriers resides in both hole- and electron- Dirac quantum states with the largest mobility as high as 70,000 cm$^2$(Vs)$^{-1}$.

cond-mat.supr-con↗

arXiv2014

Electron and Hole Injection via Charge Transfer at the Topological-Insulator $Bi_{2-x}Sb_xTe_{3-y}Se_y$/Organic-Molecule Interface

As a methodology for controlling the carrier transport of topological insulators (TI's), a flexible tuning in carrier number on the surface states (SS's) of three dimensional TI's by surface modifications using organic molecules is described. The principle of the carrier tuning and its type conversion of TI's presented in this research are based on the charge transfer of holes or electrons at the TI/organic molecule interface. By employing 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) as an electron acceptor or tetracyanoquinodimethane (TCNQ) as a donor for n- and p- Bi2-xSbxTe3-ySey (BSTS) single crystals, successful carrier conversion from n to p and its reverse mode is demonstrated depending on the electron affinities of the molecules. The present method provides a nondestructive and efficient method for local tuning in carrier density of TI's, and is useful for future applications.

cond-mat.mtrl-sci↗

arXiv2014

Reversible Switching of Charge Injection Barriers at Metal/Organic-Semiconductor Contacts Modified with Structurally Disordered Molecular Monolayers

Metal/semiconductor interfaces govern the operation of semiconductor devices through the formation of charge injection barriers that can be controlled by tuning the metal work function. However, the controlling ability is typically limited to being static. We show that a dynamic nature can be imparted to the interfaces using electrode surface modification with a structurally disordered molecular monolayer. The barrier height at the interfaces is altered significantly in a reversible way by an external electric field. As a result, a dramatic change in the carrier transport properties through the interfaces is observed, such as a reversible polarity reversion of metal/organic-semiconductor/metal diodes.

cond-mat.mtrl-sci↗

arXiv2013

Photo-oxidation of Graphene in the Presence of Water

Oxygen molecules are found to exhibit non-negligible reactivity with graphene under strong light irradiation in the presence of water. The reaction is triggered by the laser Raman spectroscopy measurement itself, and the D band (ca. 1340 cm-1) becomes larger as the laser irradiation is prolonged. The electronic transport properties of the graphene derivative are also investigated and both the electron and hole mobility are found to be reduced. These results are attributed to oxidation of graphene. This primitive modification method can be exploited to manipulate the structural and electronic properties of graphene.

cond-mat.mtrl-sci↗

arXiv2013

A Field-directional Specific Heat Study on the Gap Structure of Overdoped Ba(Fe$_{1-x}$Co$_{x}$)$_{2}$As$_{2}$

Low-temperature specific heat is measured on the overdoped Ba(Fe_{1-x}Co_x)_2As_2 (x = 0.13) single crystal under magnetic fields along three different directions. A clear anisotropy is observed on the field dependent electronic specific heat coefficient γ(H). The value of γ(H) is obviously larger with magnetic field along [001] (c-axis) than that within the ab-plane of the crystal lattice, which cannot be attributed to the effect by anisotropy of the upper critical field. Meanwhile, the data show a rather small difference when the direction of the field is rotated from [100] to [110] direction within the ab-plane. Our results suggest that a considerable part of the line nodes is not excited to contribute to the quasiparticle density of states by the field when the field is within the ab-plane. The constraints on the topology of the gap nodes are discussed based on our observations.

cond-mat.supr-con↗