arXiv subjects

Katsunori Wakabayashi

Publications and source records attributed to Katsunori Wakabayashi.

At least 73 records · Page 4Linked to original sources

arXiv2016

Thermal Hall conductivity and topological transition in a chiral p-wave superconductor for Sr2RuO4

The interplay between the thermal transport property and the topological aspect is investigated in a spin-triplet chiral p-wave superconductor Sr2RuO4 with the strong two-dimensionality. We show the thermal Hall conductivity is well described by the temperature linear term and the exponential term in the low temperature region. While the former term is proportional to the so-called Chern number directly, the latter is associated with the superconducting gap amplitude of the gamma band. We also demonstrate that the coefficient of the exponential term changes the sign around Lifshitz transition. Our obtained result may enable us access easily the physical quantities and the topological property of Sr2RuO4 in detail.

cond-mat.supr-con↗

arXiv2014

Stacking sequence dependence of electronic properties in double-layer graphene heterostructures

First-principles calculation has been performed to investigate the stability and electronic properties of double-layer graphene heterostructure (DLGH). In this system, two graphene layers are separated by hexagonal boron-nitride (h-BN) layers which work as a insulating barrier. Our results show that the stability of the system is determined by the atomistic configurations between graphene and its adjacent h-BN layer. Among different stacking sequences, Ab-stacking is most stable. Since the inserted h-BN layers modulate the on-site energies for carbon atoms of graphene layers, the electronic states of the system can be classified into metallic or semiconducting by the stacking sequence. And the stacking sequence dependence of the energy band structures of DLGHs are well described by the orbital interaction model.

cond-mat.mtrl-sci↗

arXiv2014

Decomposition into Propagating and Evanescent Modes of Graphene Ribbons

Bulk modes (BM) are basis solutions to the Schrödinger equation and they are useful in a number of physical problems. In the present work, we establish a complete set of BMs for graphene ribbons at arbitrary energy. We derive analytical expressions for these modes and systematically classify them into propagating or evanescent mode. We also demonstrate their uses in efficient electronic transport simulations of graphene-based electronic devices within both the mode-matching method and the Green's function framework. Explicit constructions of Green's functions for infinite and semi-infinite graphene ribbons are presented.

cond-mat.mes-hall↗

arXiv2014

Theory of carrier transport in graphene double-layer structure with carrier imbalance

The carrier mobility of a graphene double-layer system is evaluated on the basis of the Boltzmann transport theory. In this system, two graphene layers are separated by a dielectric barrier layer. We focus on the cases in which there is carrier imbalance between the two layers. It is found that the mobility can be improved by controlling the carrier density polarization between the two layers if we choose an appropriate dielectric environment.

cond-mat.mes-hall↗

arXiv2014

Formation mechanism of bound states in graphene point contacts

Electronic localization in narrow graphene constrictions is theoretically studied, and it is found that long-lived quasibound states (QBSs) can exist in a class of ultrashort graphene quantum point contacts (QPCs). These QBSs are shown to originate from the dispersionless edge states that are characteristic of the electronic structure of generically terminated graphene, in which pseudo-time-reversal symmetry is broken. The QBSs can be regarded as interface states confined between two graphene samples, and their properties can be modified by changing the sizes of the QPC and the interface geometry. In the presence of bearded sites, these QBSs can be converted into bound states. Experimental consequences and potential applications are discussed.

cond-mat.mes-hall↗

arXiv2014

Effect of the RuO6 octahedron rotation at the Sr2RuO4 surface on topological property

We investigate the rotation effect of the RuO$_6$ octahedron around the $c$ axis on the topological and transport properties near the surface of the spin-triplet superconductor Sr$_2$RuO$_4$. While the Fermi level of bulk Sr$_2$RuO$_4$ is near the Lifshitz transition, the RuO$_6$ rotation realized near the surface leads to the change of the Fermi surface topology. The edge current resulting from the time-reversal symmetry breaking in the chiral $p$-wave phase with fully opened excitation gap is less affected around Lifshitz transition. The topological property and the edge state are sensitive to the rotation angle and the amplitude of the nearest neighbor interaction, and the superconducting gap is strongly reduced in the larger next nearest neighbor interaction region. Although the edge state in Sr$_2$RuO$_4$ is topologically protected, it is not robust to the disorder such as impurity or defect.

cond-mat.supr-con↗

arXiv2013

Topological and edge state properties of a three-band model for Sr2RuO4

Modeling the spin-triplet superconductor Sr2RuO4 through a three-orbital tight-binding model we investigate topological properties and edge states assuming chiral p-wave pairing. In concordance with experiments the three Fermi surfaces consist of two electron-like and one hole-like one corresponding to the alpha-, beta- and gamma-band on the level of a two-dimensional system. The quasi-particle spectra and other physical quantities of the superconducting phase are calculated by means of a self-consistent Bogoliubov-de Gennes approach for a ribbon shaped system. While a full quasiparticle excitation gap is realized in the bulk system, at the edges gapless states appear some of which have linear and others nearly flat dispersion around zero energy. This study shows the interplay between spin-orbit coupling induced spin currents, chiral edge currents and correlation driven surface magnetism. The topological nature of the chiral p-wave state manifests itself in the gamma-band characterized by an integer Chern number. As the gamma-band is close to a Lifshitz transition in Sr2RuO4, changing the sign of the Chern number, the topological nature may be rather fragile.

cond-mat.supr-con↗

arXiv2013

Thickness-Dependent Interfacial Coulomb Scattering in Atomically Thin Field-Effect Transistors

Two-dimensional semiconductors are structurally ideal channel materials for the ultimate atomic electronics after silicon era. A long-standing puzzle is the low carrier mobility (μ) in them as compared with corresponding bulk structures, which constitutes the main hurdle for realizing high-performance devices. To address this issue, we perform combined experimental and theoretical study on atomically thin MoS2 field effect transistors with varying the number of MoS2 layers (NLs). Experimentally, an intimate relation is observed with a 10-fold degradation in μ for extremely thinned monolayer channels. To accurately describe the carrier scattering process and shed light on the origin of the thinning-induced mobility degradation, a generalized Coulomb scattering model is developed with strictly considering device configurative conditions, i.e., asymmetric dielectric environments and lopsided carrier distribution. We reveal that the carrier scattering from interfacial Coulomb impurities (e.g., chemical residues, gaseous adsorbates and surface dangling bonds) is greatly intensified in extremely thinned channels, resulting from shortened interaction distance between impurities and carriers. Such a pronounced factor may surpass lattice phonons and serve as dominant scatterers. This understanding offers new insight into the thickness induced scattering intensity, highlights the critical role of surface quality in electrical transport and would lead to rational performance improvement strategies for future atomic electronics.

cond-mat.mes-hall↗

arXiv2013

Dielectric Environment Effect on Carrier Mobility of Graphene Double-Layer Structure

We have theoretically studied the dielectric environment effect on the charged-impurity-limited carrier mobility of graphene double-layer structure (GDLS) on the basis of the Boltzmann transport theory. In this system, two graphene layers are separated by a dielectric barrier layer. It is pointed out that the carrier mobility strongly depends on the dielectric constant of the barrier layer when the interlayer distance becomes larger than the inverse of the Fermi wave vector. Moreover, the conditions to improve the charged-impurity-limited carrier mobility of the GDLS are evaluated.

cond-mat.mes-hall↗

arXiv2012

Properties of edge states in spin-triplet two-band superconductor

Motivated by Sr2RuO4 the magnetic properties of edge states in a two-band spin-triplet superconductor with electron- and hole-like Fermi surfaces are investigated assuming chiral p-wave pairing symmetry. The two bands correspond to the alpha-beta-bands of Sr2RuO4 and are modeled within a tight-binding model including inter-orbital hybridization and spin-orbit coupling effects. Including superconductivity the quasiparticle spectrum is determined by means of a self-consistent Bogolyubov-de Gennes calculation. While a full quasiparticle excitation gap appears in the bulk, gapless states form at the edges which produce spontaneous spin and/or charge currents. The spin current is the result of the specific band structure while the charge current originates from the superconducting condensate. Together they induce a small spin polarization at the edge. Furthermore onsite Coulomb repulsion is included to show that the edge states are unstable against the formation of a Stoner-like spin polarization of the edge states. Through spin-orbit coupling the current- and the correlation-induced magnetism are coupled to the orientation of the chirality of the superconducting condensate. We speculate that this type of phenomenon could yield a compensation of the magnetic fields induced by currents and also explain the negative result in the recent experimental search for chiral edge currents.

cond-mat.str-el↗

arXiv2011

Electronic States and Local Density of States in Graphene with a Corner Edge Structure

We study electronic states of semi-infinite graphene with a corner edge, focusing on the stability of edge localized states at zero energy. The 60°, 90°, 120° and 150° corner edges are examined. The 60° and 120° corner edges consist of two zigzag edges, while 90° and 150° corner edges consist of one zigzag edge and one armchair edge. We numerically obtain the local density of states (LDOS) on the basis of a nearest-neighbor tight-binding model by using Haydock's recursion method. We show that edge localized states appear along a zigzag edge of each corner edge structure except for the 120° case. To provide insight into this behavior, we analyze electronic states at zero energy within the framework of an effective mass equation. The result of this analysis is consistent with the behavior of the LDOS.

cond-mat.mes-hall↗

arXiv2011

Edge States and Stacking Effects in Nanographene Systems

Bilayer graphene nanoribbon with zigzag edge is investigated with the tight binding model. Two stacking structures, alpha and beta, are considered. The band splitting is seen in the alpha structure, while the splitting in the wave number direction is found in the beta structure. The local density of states in the beta structure tend to avoid sites where inter-layer hopping interactions are present.

cond-mat.mes-hall↗

arXiv2010

Berry's Phase for Standing Wave Near Graphene Edge

Standing waves near the zigzag and armchair edges, and their Berry's phases are investigated. It is suggested that the Berry's phase for the standing wave near the zigzag edge is trivial, while that near the armchair edge is non-trivial. A non-trivial Berry's phase implies the presence of a singularity in parameter space. We have confirmed that the Dirac singularity is absent (present) in the parameter space for the standing wave near the zigzag (armchair) edge. The absence of the Dirac singularity has a direct consequence in the local density of states near the zigzag edge. The transport properties of graphene nanoribbons observed by recent numerical simulations and experiments are discussed from the point of view of the Berry's phases for the standing waves.

cond-mat.mes-hall↗

arXiv2010

Soliton Trap in Strained Graphene Nanoribbons

The wavefunction of a massless fermion consists of two chiralities, left-handed and right-handed, which are eigenstates of the chiral operator. The theory of weak interactions of elementally particle physics is not symmetric about the two chiralities, and such a symmetry breaking theory is referred to as a chiral gauge theory. The chiral gauge theory can be applied to the massless Dirac particles of graphene. In this paper we show within the framework of the chiral gauge theory for graphene that a topological soliton exists near the boundary of a graphene nanoribbon in the presence of a strain. This soliton is a zero-energy state connecting two chiralities and is an elementally excitation transporting a pseudospin. The soliton should be observable by means of a scanning tunneling microscopy experiment.

cond-mat.mes-hall↗

arXiv2010

Chiral Gauge Theory for Graphene Edge

An effective-mass theory with a deformation-induced (an axial) gauge field is proposed as a theoretical framework to study graphene edge. Though the gauge field is singular at edge, it can represent the boundary condition and this framework is adopted to solve the scattering problems for the zigzag and armchair edges. Furthermore, we solve the scattering problem in the presence of a mass term and an electromagnetic field. It is shown that the mass term makes the standing wave at the Dirac point avoid the zigzag edge, by which the local density of states disappears, and the lowest and first Landau states are special near the zigzag edge. The (chiral) gauge theory framework provides a useful description of graphene edge.

cond-mat.mes-hall↗

arXiv2009

Kohn Anomalies in Graphene Nanoribbons

The quantum corrections to the energies of the $Γ$ point optical phonon modes (Kohn anomalies) in graphene nanoribbons are investigated. We show theoretically that the longitudinal optical modes undergo a Kohn anomaly effect, while the transverse optical modes do not. In relation to Raman spectroscopy, we show that the longitudinal modes are not Raman active near the zigzag edge, while the transverse optical modes are not Raman active near the armchair edge. These results are useful for identifying the orientation of the edge of graphene nanoribbons by G band Raman spectroscopy, as is demonstrated experimentally. The differences in the Kohn anomalies for nanoribbons and for metallic single wall nanotubes are pointed out, and our results are explained in terms of pseudospin effects.

cond-mat.mes-hall↗

arXiv2009

Control of electric current by graphene edge structure engineering

In graphene nanoribbon junctions, the nearly perfect transmission occurs in some junctions while the zero conductance dips due to anti-resonance appear in others. We have classified the appearance of zero conductance dips for all combinations of ribbon and junction edge structures. These transport properties do not attribute to the whole junction structure but the partial corner edge structure, which indicates that one can control the electric current simply by cutting a part of nanoribbon edge. The ribbon width is expected to be narrower than 10 nm in order to observe the zero conductance dips at room temperature.

cond-mat.mes-hall↗

arXiv2009

Electronic transport properties of graphene nanoribbons

We will present brief overview on the electronic and transport properties of graphene nanoribbons focusing on the effect of edge shapes and impurity scattering. The low-energy electronic states of graphene have two non-equivalent massless Dirac spectrum. The relative distance between these two Dirac points in the momentum space and edge states due to the existence of the zigzag type graphene edges are decisive to the electronic and transport properties of graphene nanoribbons. In graphene nanoribbons with zigzag edges, two valleys related to each Dirac spectrum are well separated in momentum space. The propagating modes in each valley contain a single chiral mode originating from a partially flat band at band center. This feature gives rise to a perfectly conducting channel in the disordered system, if the impurity scattering does not connect the two valleys, i.e. for long-range impurity potentials. On the other hand, the low-energy spectrum of graphene nanoribbons with armchair edges is described as the superposition of two non-equivalent Dirac points of graphene. In spite of the lack of well-separated two valley structures, the single-channel transport subjected to long-ranged impurities is nearly perfectly conducting, where the backward scattering matrix elements in the lowest order vanish as a manifestation of internal phase structures of the wavefunction. Symmetry considerations lead to the classification of disordered zigzag ribbons into the unitary class for long-range impurities, and the orthogonal class for short-range impurities. However, no such crossover occurs in armchair nanoribbons.

cond-mat.mes-hall↗