arXiv subjects

Keiji Ueno

Publications and source records attributed to Keiji Ueno.

17 recordsLinked to original sources

arXiv2024

Momentum-resolved resonant photoelectron spectroscopic study for 1T-TiSe$_2$: Observation of negative q in the Fano resonance due to inter-atomic interaction in the valence band

The remarkable properties of (1T-)TiSe$_2$ among the transition metal dichalcogenides have attracted the attention of many researchers due to its peculiar behavior during the charge density wave (CDW) transition. Therefore, it is highly desirable to study its electronic structure down to the atomic orbitals. In the present research, we applied momentum-resolved resonant photoelectron spectroscopy to study TiSe$_2$ at the Ti2p-Ti3d absorption edge by using a momentum microscope, which can simultaneously detect the electronic states in a wide $(k_x,k_y)$ range. We have also used constant initial state (CIS) spectroscopy and density functional theory (DFT) calculations to reveal the hybridization between the Ti3d and Se4p orbitals within the valence band at the Gamma point at room temperature. In addition, an interesting result comes from our analysis of the CIS spectrum for the energy band located at a binding energy of 2 eV at the M-point. This band, mainly composed of the Se4p orbital, exhibited a Fano line profile at the Ti2p edge, with a negative value of the parameter "$q$". This is the first clear evidence of the inter-atomic interaction during the valence band photoelectron emission process. This behavior differs significantly from the standard resonant photoelectron emission, which usually involves intra-atomic interactions. It also differs from the multi-atom resonant photoelectron emission (MARPE) observed in the core-level photoelectron emission, as we focus on the photoelectron emission from the valence band in this research.

cond-mat.mtrl-sci↗

arXiv2023

Ultrafast melting of charge-density wave fluctuations at room temperature in ${1T-TiSe_2}$ monitored under non-equilibrium conditions

We investigate the ultrafast lattice dynamics in ${1T-TiSe_2}$ using femtosecond reflection pump-probe and pump-pump-probe techniques at room temperature. The time-domain signals and Fourier-transformed spectra show the $A_{1g}$ phonon mode at 5.9 THz. Moreover, we observe an additional mode at $\approx$ 3 THz, corresponding to the charge-density wave (CDW) amplitude mode, which is generally visible below T$_c \approx 200\ $K. We argue that the emergence of the CDW amplitude mode at room temperature can be a consequence of fluctuations of order parameters, based on the additional experiment using the pump-pump-probe technique, which exhibited suppression of the AM signal within the ultrafast time scale of $\sim$ 0.5 ps.

cond-mat.mtrl-sci↗

arXiv2023

Terahertz emission from transient currents and coherent phonons in layered MoSe$_2$ and WSe$_2$

Terahertz (THz) time-domain emission spectroscopy was performed on layered 2H-MoSe2 and 2H-WSe2. The THz emission shows an initial cycle attributed to surge currents and is followed by oscillations attributed to coherent interlayer phonon modes. To obtain the frequencies of the interlayer vibrations, analysis of the THz emission waveforms were performed, separating the two contributions to the total waveform. Results of the fitting show several vibrational modes in the range of 5.87 to 32.75 cm-1 for the samples, attributed to infrared-active interlayer shear and breathing modes. This study demonstrates that THz emission spectroscopy provides a means of observing these low frequency vibrational modes in layered materials.

cond-mat.mtrl-sci↗

arXiv2022

Emergence of Interlayer Coherence in Twist-Controlled Graphene Double Layers

We report enhanced interlayer tunneling with reduced linewidth at zero interlayer bias in a twist-controlled double monolayer graphene heterostructure in the quantum Hall regime, when the top ($ν_{\mathrm{T}}$) and bottom ($ν_{\mathrm{B}}$) layer filling factors are near $ν_{\mathrm{T}}=\pm1/2, \pm3/2$ and $ν_{\mathrm{B}}=\pm1/2, \pm3/2$, and the total filling factor $ν= \pm1$ or $\pm3$. The zero-bias interlayer conductance peaks are stable against variations of layer filling factor, and signal the emergence of interlayer phase coherence. Our results highlight twist control as a key attribute in revealing interlayer coherence using tunneling.

cond-mat.mes-hall↗

arXiv2022

Link between Weyl-fermion chirality and spin texture

Topological semimetals have recently attracted great attention due to prospective applications governed by their peculiar Fermi surfaces. Weyl semimetals host chiral fermions that manifest as pairs of non-degenerate massless Weyl points in their electronic structure, giving rise to novel macroscopic quantum phenomena such as the chiral anomaly, an unusual magnetoresistance, and various kinds of Hall effects These properties enable the engineering of non-local electric transport devices, magnetic sensors and memories, and spintronics devices. Nevertheless, little is known about the underlying spin- and orbital-degrees of freedom of the electron wave functions in Weyl semimetals, that govern the electric transport. Here, we give evidence that the chirality of the Weyl points in the Type-II Weyl semimetal MoTe$_2$ is directly linked to the spin texture and orbital angular momentum of the electron wave functions. By means of state-of-the-art spin- and momentum-resolved photoemission spectroscopy the spin- and orbital texture in the Fermi surface is directly resolved. Supported by first-principles calculations, we examined the relationship between the topological chiral charge and spin texture, which significantly contributes to the understanding of the electronic structure in topological quantum materials.

cond-mat.mtrl-sci↗

arXiv2022

Photo-induced Tellurium segregation in $\mathrm{MoTe_2}$

We report on the coherent phonon spectroscopy of polymorphic $\mathrm{MoTe_2}$ single crystals using a femtosecond-pulsed laser to investigate the relationship between structural phase transitions and photo-thermal effects induced by high-density laser excitation. Even when a femtosecond pulsed laser was used, which generally induces fewer heat accumulation effects than the case for a CW laser, tellurium segregation was observed in coherent phonon spectra with increasing excitation density, while no structural phase transition among polymorphs of $\mathrm{MoTe_2}$ was observed. The use of higher photon-energy excitation, however, was found to suppress tellurium segregation.

cond-mat.mtrl-sci↗

arXiv2021

Twist Angle Dependent Interlayer Exciton Lifetimes in van der Waals Heterostructures

In van der Waals (vdW) heterostructures formed by stacking two monolayers of transition metal dichalcogenides, multiple exciton resonances with highly tunable properties are formed and subject to both vertical and lateral confinement. We investigate how a unique control knob, the twist angle between the two monolayers, can be used to control the exciton dynamics. We observe that the interlayer exciton lifetimes in $\text{MoSe}_{\text{2}}$/$\text{WSe}_{\text{2}}$ twisted bilayers (TBLs) change by one order of magnitude when the twist angle is varied from 1$^\circ$ to 3.5$^\circ$. Using a low-energy continuum model, we theoretically separate two leading mechanisms that influence interlayer exciton radiative lifetimes. The shift to indirect transitions in the momentum space with an increasing twist angle and the energy modulation from the moiré potential both have a significant impact on interlayer exciton lifetimes. We further predict distinct temperature dependence of interlayer exciton lifetimes in TBLs with different twist angles, which is partially validated by experiments. While many recent studies have highlighted how the twist angle in a vdW TBL can be used to engineer the ground states and quantum phases due to many-body interaction, our studies explore its role in controlling the dynamics of optically excited states, thus, expanding the conceptual applications of "twistronics".

cond-mat.mes-hall↗

arXiv2020

Understanding the Memory Window Overestimation of 2D Materials Based Floating Gate Type Memory Devices by Measuring Floating Gate Voltage

The memory window of floating gate (FG) type non-volatile memory (NVM) devices is a fundamental figure of merit used not only to evaluate the performance, such as retention and endurance, but also to discuss the feasibility of advanced functional memory devices. However, the memory window of two dimensional (2D) materials based NVM devices is historically determined from round sweep transfer curves, while that of conventional Si NVM devices is determined from high and low threshold voltages (Vths), which are measured by single sweep transfer curves. Here, it is elucidated that the memory window of 2D NVM devices determined from round sweep transfer curves is overestimated compared with that determined from single sweep transfer curves. The floating gate voltage measurement proposed in this study clarifies that the Vths in round sweep are controlled not only by the number of charges stored in floating gate but also by capacitive coupling between floating gate and back gate. The present finding on the overestimation of memory window enables to appropriately evaluate the potential of 2D NVM devices.

cond-mat.mtrl-sci↗

arXiv2020

All 2D Heterostructure Tunnel Field Effect Transistors: Impact of Band Alignment and Heterointerface Quality

Van der Waals heterostructures are the ideal material platform for tunnel field effect transistors (TFETs) because a band-to-band tunneling (BTBT) dominant current is feasible at room temperature (RT) due to ideal, dangling bond free heterointerfaces. However, achieving subthreshold swing (SS) values lower than 60 mVdec-1 of the Boltzmann limit is still challenging. In this work, we systematically studied the band alignment and heterointerface quality in n-MoS2 channel heterostructure TFETs. By selecting a p+-MoS2 source with a sufficiently high doping level, stable gate modulation to a type III band alignment was achieved regardless of the number of MoS2 channel layers. For the gate stack formation, it was found that the deposition of Al2O3 as the top gate introduces defect states for the generation current under reverse bias, while the integration of an h-BN top gate provides a defect-free, clean interface, resulting in the BTBT dominant current even at RT. All 2D heterostructure TFETs produced by combining the type III n-MoS2/p+-MoS2 heterostructure with the h-BN top gate insulator resulted in low SS values at RT.

cond-mat.mtrl-sci↗

arXiv2020

Flat bands in twisted bilayer transition metal dichalcogenides

The crystal structure of a material creates a periodic potential that electrons move through giving rise to the electronic band structure of the material. When two-dimensional materials are stacked, the twist angle between the layers becomes an additional degree freedom for the resulting heterostructure. As this angle changes, the electronic band structure is modified leading to the possibility of flat bands with localized states and enhanced electronic correlations. In transition metal dichalcogenides, flat bands have been theoretically predicted to occur for long moiré wavelengths over a range of twist angles around 0 and 60 degrees giving much wider versatility than magic angle twisted bilayer graphene. Here we show the existence of a flat band in the electronic structure of 3° and 57.5° twisted bilayer WSe2 samples using scanning tunneling spectroscopy. Direct spatial mapping of wavefunctions at the flat band energy have shown that the flat bands are localized differently for 3° and 57.5°, in excellent agreement with first-principle density functional theory calculations.

cond-mat.str-el↗

arXiv2020

Investigation of laser-induced-metal phase of $\mathrm{MoTe}_{2}$ and its contact property via scanning gate microscopy

Although semiconductor to metal phase transformation of MoTe$_{2}$ by high-density laser irradiation of more than 0.3 MW/cm$^{2}$ has been reported, we reveal that the laser-induced-metal (LIM) phase is not the 1T' structure derived by a polymorphic-structural phase transition but consists instead of semi-metallic Te induced by photo-thermal decomposition of MoTe$_{2}$. The technique is used to fabricate a field effect transistor with a Pd/2H-MoTe$_{2}$/LIM structure having an asymmetric metallic contact, and its contact properties are studied via scanning gate microscopy. We confirm that a Schottky barrier (a diffusion potential) is always formed at the Pd/2H-MoTe$_{2}$ boundary and obstacles a carrier transport while an Ohmic contact is realized at the 2H-MoTe$_{2}$/LIM phase junction for both n- and p-type carriers.

cond-mat.mtrl-sci↗

arXiv2018

Ultrafast Dynamics of Electron-phonon Coupling in Transition-metal Dichalcogenides

Time-domain femtosecond laser spectroscopic measurements of the ultrafast lattice dynamics in 2H-MoTe2 bulk crystals were carried out to understand the carrier-phonon interactions that govern electronic transport properties. An unusually long lifetime coherent A1g phonon mode was observed even in the presence of very large density of photo-excited carriers at room temperature. The decay rate was observed to decrease with increasing excitation laser fluence. Based on the laser fluence dependence including the inducement of significant phonon softening and a peculiar decrease in phonon decay rate, we attribute the long lifetime lattice dynamics to weak anharmonic phonon-phonon coupling and a carrier-density-dependent deformation potential electron-phonon coupling.

cond-mat.mtrl-sci↗

arXiv2018

2D Tunnel Field Effect Transistors (FETs) with a Stable Charge-Transfer-Type p$^+$-WSe$_2$ Source

Two-dimensional (2D) materials are highly promising for tunnel field effect transistors (TFETs) with low subthreshold swing and high drive current because the shorter tunnel distance and strong gate controllability can be expected from the van der Waals gap distance and the atomically sharp heterointerface formed independently of lattice matching. However, the common problem for 2D-2D TFETs is the lack of highly doped 2D materials with the high process stability as the sources. In this study, we have found that p+-WSe2 doped by charge transfer from a WOx surface oxide layer can be stabilized by transferring it onto a h-BN substrate. Using this p$^+$-WSe$_2$ as a source, we fabricate all-solid-state 2D-2D heterostructure TFETs with an Al2O3 top gate insulator, i.e., type-II p$^+$-WSe$_2$ /MoS$_2$ and type-III p$^+$-WSe$_2$ /WSe$_2$. The band-to-band tunneling and negative differential resistance trends are clearly demonstrated at low temperatures. This work suggests that high doped 2D crystal of the charge transfer type is an excellent choice as sources for TFETs.

physics.app-ph↗

arXiv2017

Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2

Ferromagnetic van der Waals (vdW) materials are in demand for spintronic devices with all-two-dimensional-materials heterostructures. Here, we demonstrate mechanical exfoliation of magnetic-atom-intercalated transition metal dichalcogenide Cr1/3TaS2 from its bulk crystal; previously such intercalated materials were thought difficult to exfoliate. Magnetotransport in exfoliated tens-of-nanometres-thick flakes revealed ferromagnetic ordering below its Curie temperature TC ~ 110 K as well as strong in-plane magnetic anisotropy; these are identical to its bulk properties. Further, van der Waals heterostructure assembly of Cr1/3TaS2 with another intercalated ferromagnet Fe1/4TaS2 is demonstrated using a dry-transfer method. The fabricated heterojunction composed of Cr1/3TaS2 and Fe1/4TaS2 with a native Ta2O5 oxide tunnel barrier in between exhibits tunnel magnetoresistance (TMR), revealing possible spin injection and detection with these exfoliatable ferromagnetic materials through the vdW junction.

cond-mat.mes-hall↗

arXiv2015

Construction of van der Waals magnetic tunnel junction using ferromagnetic layered dichalcogenide

We investigate the micromechanical exfoliation and van der Waals (vdW) assembly of ferromagnetic layered dichalcogenide Fe0.25TaS2. The vdW interlayer coupling at the Fe-intercalated plane of Fe0.25TaS2 allows exfoliation of flakes. A vdW junction between the cleaved crystal surfaces is constructed by dry transfer method. We observe tunnel magnetoresistance in the resulting junction under an external magnetic field applied perpendicular to the plane, demonstrating spin-polarized tunneling between the ferromagnetic layered material through the vdW junction.

cond-mat.mes-hall↗

arXiv2015

Double resonance Raman modes in mono- and few-layer MoTe$_2$

We study the second-order Raman process of mono- and few-layer MoTe$_2$, by combining {\em ab initio} density functional perturbation calculations with experimental Raman spectroscopy using 532, 633 and 785 nm excitation lasers. The calculated electronic band structure and the density of states show that the electron-photon resonance process occurs at the high-symmetry M point in the Brillouin zone, where a strong optical absorption occurs by a logarithmic Van-Hove singularity. Double resonance Raman scattering with inter-valley electron-phonon coupling connects two of the three inequivalent M points in the Brillouin zone, giving rise to second-order Raman peaks due to the M point phonons. The predicted frequencies of the second-order Raman peaks agree with the observed peak positions that cannot be assigned in terms of a first-order process. Our study attempts to supply a basic understanding of the second-order Raman process occurring in transition metal di-chalcogenides (TMDs) and may provide additional information both on the lattice dynamics and optical processes especially for TMDs with small energy band gaps such as MoTe$_2$ or at high laser excitation energy.

cond-mat.mtrl-sci↗

arXiv2003

Accumulation and depletion layer thicknesses in organic field effect transistors

We present a simple but powerful method to determine the thicknesses of the accumulation and depletion layers and the distribution curve of injected carriers in organic field effect transistors. The conductivity of organic semiconductors in thin film transistors was measured in-situ and continuously with a bottom contact configuration, as a function of film thickness at various gate voltages. Using this method, the thicknesses of the accumulation and depletion layers of pentacene were determined to be 0.9 nm (VG=-15 V) and 5 nm (VG=15 V).

cond-mat.mtrl-sci↗