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Accumulation and depletion layer thicknesses in organic field effect transistors

Manabu Kiguchi·Manabu Nakayama·Kohei Fujiwara·Keiji Ueno·Toshihiro Shimada·Koichiro Saiki
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Abstract

We present a simple but powerful method to determine the thicknesses of the accumulation and depletion layers and the distribution curve of injected carriers in organic field effect transistors. The conductivity of organic semiconductors in thin film transistors was measured in-situ and continuously with a bottom contact configuration, as a function of film thickness at various gate voltages. Using this method, the thicknesses of the accumulation and depletion layers of pentacene were determined to be 0.9 nm (VG=-15 V) and 5 nm (VG=15 V).

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Manabu Kiguchi, Manabu Nakayama, Kohei Fujiwara, Keiji Ueno, Toshihiro Shimada, Koichiro Saiki. 2003-10-31. Accumulation and depletion layer thicknesses in organic field effect transistors. https://doi.org/10.1143/jjap.42.l1408

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