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Kenji Watanabe

Publications and source records attributed to Kenji Watanabe.

At least 289 records · Page 16Linked to original sources
arXiv2026

Layer-polarized Transport via Gate-defined 1D and 0D PN Junctions in Double Bilayer Graphene

We fabricate twisted double bilayer graphene devices with zero twist angle and a set of local top and bottom gates aligned perpendicularly to each other. A 1D PN junction can be electrostatically defined when the gate voltages applied to the top gates are the same but different on the bottom gates. Resistance peaks are observed at finite doping instead of at the charge neutrality points, exhibiting an unconventional broken-cross shape that arises from layer polarization of the P and N region, which can be further enhanced with finite magnetic fields. A 0D point junction (PJ) can be electrostatically defined by applying different gate voltages to the top and bottom gates, such that the P and N sides of the device are connected at a single point in the center of the device. As finite magnetic field B increases, the quantum Hall (QH) states are selectively brought into contact or away from each other depending on their layer polarization, leading to unconventional quantum oscillations which characterize the layer-polarized band-crossing. Our work provides new insights into understanding band-structure evolution and layer polarization in twisted bilayers and paves the way for new device functionality based on manipulating layer-polarized electronic states.

cond-mat.mes-hall↗
arXiv2026

Non-equilibrium transport reveals energy level degeneracy

We demonstrate a method to determine energy level degeneracies using non-equilibrium electronic transport through voltage-biased quantum dots. We establish the general validity of this approach using single and double quantum dots in bilayer graphene and GaAs. Unlike established methods based on entropy measurements or time-resolved tunneling statistics, our approach achieves comparable precision without requiring calibrated electron heating or real-time charge detection. We resolve the predicted symmetric shell structure in bilayer graphene quantum dots, including a singlet ground state at half filling and the ground state degeneracies of the first 13 carriers. Extending the method to double quantum dots, we observe degeneracy doubling associated with bonding and antibonding orbitals for a single carrier and a fourfold degeneracy for two carriers, previously inaccessible with existing techniques. These results establish a conceptually general and experimentally straightforward approach for probing energy level degeneracies in complex quantum systems.

cond-mat.mes-hall↗
arXiv2026

Magnetoresistance Oscillations in Few-Layer NbSe2 in Superconducting Fluctuation Regime

Quantum interference phenomena in superconductors, such as Josephson interference and Little-Parks oscillations, serve as powerful probes of phase coherence, symmetry breaking and vortex dynamics. However, they are typically observed in well-defined mesoscopic structures, and their behavior in the two-dimensional limit remains largely unexplored. Here, we report periodic magnetoresistance oscillations, superconducting interference patterns, and interfering diode effect in unpatterned few-layer NbSe2. These phenomena emerge exclusively within the superconducting fluctuation regime of thin samples, consistent with the enhanced anomalous metallic behavior of atomically thin NbSe2. The non-monotonic temperature dependence of both the oscillation amplitude and the diode efficiency can be captured by a model in which thermally activated vortices traverse intrinsic supercurrent loops. Our results reveal that the observed interference phenomena originate from the lost of global phase coherence, providing a new route to accessing interference effects in unpatterned superconductors.

cond-mat.supr-con↗
arXiv2026

Imaging topological polar structures in marginally twisted 2D semiconductors

Moire superlattices formed in van der Waals heterostructures due to twisting, lattice mismatch and strain present an opportunity for creating novel metamaterials with unique properties not present in the individual layers themselves. Ferroelectricity for example, arises due to broken inversion symmetry in twisted and strained bilayers of 2D semiconductors with stacking domains of alternating out-of-plane polarization. However, understanding the individual contributions of twist and strain to the formation of topological polar nanostructures remains to be established and has proven to be experimentally challenging. Inversion symmetry breaking has been predicted to give rise to an in-plane component of polarization along the domain walls, leading to the formation of a network of topologically non-trivial merons (half-skyrmions) that are Bloch-type for twisted and Neel-type for strained systems. Here we utilise angle-resolved, high-resolution vector piezoresponse force microscopy (PFM) to spatially resolve polarization components and topological polar nanostructures in marginally twisted bilayer WSe2, and provide experimental proof for the existence of topologically non-trivial meron/antimeron structures. We observe both Bloch-type and Neel-type merons, allowing us to differentiate between moire superlattices formed due to twist or heterogeneous strain. This first demonstration of non-trivial real-space topology in a twisted van der Waals heterostructure opens pathways for exploring the connection between twist and topology in engineered nano-devices.

cond-mat.mes-hall↗
arXiv2026

Pulsed coherent spectroscopy of a quantum emitter in hexagonal Boron Nitride

Defects in solid-state systems constitute a promising platform for the realization of deterministic quantum emitters. Among many candidate materials and emitters, point defects in hexagonal Boron Nitride (hBN) have recently emerged as particularly promising. In this work, we probe the coherence of an individual B center with a zero phonon line at 436 nm, under pulsed resonant excitation. We observe power-dependent Rabi oscillations up to 5π, demonstrating optical coherent control of the transition. We achieve an excellent single photon purity of 93% at π-pulse. Furthermore, we probe the coherence of the two-level system using Ramsey interferometry, revealing an inhomogeneous coherence time of T_2*=0.60 ns. These results establish B centers in hBN as viable candidates for triggered, coherent quantum emitters and represent an important step towards their integration into quantum photonic platforms.

quant-ph↗
arXiv2026

Microwave Imaging of Edge Conductivity in Graphene at Charge Neutrality and Quantum Hall States

We report local conductivity imaging of edge states in monolayer graphene by millikelvin microwave impedance microscopy (MIM). At the charge-neutrality point, as the magnetic field increases, the local conductivity at the edge drops to zero more slowly than in the bulk. This behavior is consistent with the calculated spatial profile of the charge gap in the canted antiferromagnetic phase. For comparison, we also perform microwave imaging of integer quantum Hall states away from neutrality, which host dissipationless chiral edge channels. The evolution of the edge signal as a function of the bulk gap is fundamentally different between the Landau level filling factor $ν= 0$ and $|ν| \ge 1$ integer quantum Hall states, which can be qualitatively explained by numerical simulations and theoretical analysis. Our results provide a comprehensive microscopic picture of the edge and bulk states as the Fermi level moves across the unique Landau-level spectrum of graphene.

cond-mat.str-el↗
arXiv2026

Self-Assembled hBN Wrinkles as Planar Optofluidic Channels

Optically accessible, scalable planar nanofluidic channels are attractive for studying transport and localization under confinement. Two dimensional (2D) materials provide large area, atomically flat interfaces for generating such platforms, yet achieving long range one-dimensional (1D) confinement with top-down nanofabrication remains challenging because it requires reproducible nanoscale feature control over extended distances, high yield, and low nonspecific adsorption of analytes under aqueous conditions. Here we demonstrate that thermally induced wrinkling of exfoliated hexagonal boron nitride (hBN) produces self-assembled, liquid-accessible, channel-like networks through a lithography-free process. By varying flake thickness and substrate choice, we quantify statistical trends in wrinkle density and morphology, thereby establishing a practical fabrication design space. Atomic force microscopy and electron microscopy reveal wrinkle-derived geometries with vertical confinement ranging from <2 nm to >100 nm depending on flake thickness and substrate. We further employ time-sequence optical imaging upon droplet-contact, which together with Raman mapping of the water OH-stretch band and capacitance-gradient mapping (dC/dz) by scanning dielectric microscopy (KPFM-based) measurements, demonstrates liquid infiltration and long-term liquid retention within the wrinkle network for more than 10 h. We finally show a proof-of-concept biomolecule confinement application in which we integrate a graphene overlayer as a background suppression interface, enabling wide-field fluorescence localization of ATTO647N labeled DNA along hBN wrinkle-induced nanochannels. Overall, this work establishes self-assembled hBN wrinkles as a scalable, and optically addressable planar nanofluidic platform for confinement of fluids and biomolecules.

physics.app-ph↗
arXiv2026

Phonon-enhanced strain sensitivity of quantum dots in two-dimensional semiconductors

Two-dimensional semiconductors have attracted considerable interest for integration into emerging quantum photonic networks. Strain engineering of monolayer transition-metal dichalcogenides (ML-TMDs) enables the tuning of light-matter interactions and associated optoelectronic properties, and generates new functionalities, including the formation of quantum dots (QDs). Here, we combine spatially resolved micro-photoluminescence ($μ$-PL) spectroscopy from cryogenic (4$\text{-}$94 K) to room temperature with micro-Raman spectroscopy at room temperature to investigate the strain-dependent emission energies of thousands of individual QDs in ML-WS$_2$ and ML-WSe$_2$, integrated across multiple heterostructures and a piezoelectric device. Compared with delocalized excitons, QDs in both materials exhibit enhanced strain sensitivities of their emission energies $-$ approximately fourfold in WS$_2$ and twofold in WSe$_2$ $-$ leading to pronounced broadening of the ensemble emission linewidth. Temperature-dependent $μ$-PL spectroscopy combined with dynamic strain tuning experiments further reveal that the enhanced strain sensitivity of individual QDs originates from strengthened interactions with low-energy phonons induced by quantum confinement. Our results demonstrate a versatile strain-engineering approach with potential for spectral matching across solid-state, atomic, and hybrid quantum photonic networks, and provide new insights into phonon-QD interactions in two-dimensional semiconductors.

quant-ph↗
arXiv2026

Emergence of a symmetry-broken Chern insulator near a moiré Kondo breakdown

Moiré semiconductors built on angle-aligned transition metal dichalcogenide (TMD) heterobilayers provide a physical realization of the Kondo lattice model, in which one TMD layer is prepared in a Mott insulating state supporting a lattice of local magnetic moments and the other layer in a metallic state supporting itinerant carriers. The artificial Kondo lattice enables the exploration of exotic states of matter near a continuously tunable Kondo breakdown. Here we report the emergence of a symmetry-broken Chern insulator at a moiré hole filling factor 4/3 in angle-aligned MoTe2/WSe2 moiré bilayers, which realize a chiral Kondo lattice. The symmetry-broken Chern insulator, which exhibits integer quantized Hall conductance at a fractional moiré filling, breaks the translational symmetry of the lattice spontaneously; it also appears only near a magnetic field-induced Kondo breakdown in the mixed-valence regime of the material. We further demonstrate that the magnetic field required to induce the Kondo breakdown and to stabilize the symmetry-broken Chern insulator is twist angle dependent. The results present new opportunities for exploring the subtle interplay between topology and Kondo interactions in moiré semiconductors.

cond-mat.mes-hall↗
arXiv2026

Electron viscosity and device-dependent variability in four-probe electrical transport in ultra-clean graphene field-effect transistors

Hydrodynamic electrons in high-mobility graphene devices have demonstrated great potential in establishing an electronic analogue of relativistic quantum fluid in solid-state systems. One of the key requirements for observing viscous electron flow in an electronic channel is a large momentum-relaxation path, a process primarily limited by electron-impurity/phonon scattering in graphene. Over the past decade, multiple complex device geometries have been successfully employed to suppress momentum-relaxing scattering mechanisms; however, experimental observations have been found to be sensitive to the device fabrication process and architecture, raising questions about the signature of electron hydrodynamics itself. Here, we present a study on multiple ultra-clean graphene field-effect transistors (FETs) in a simple, rectangular four-terminal device architecture. Using electrical transport measurements, we have characterised the pristine quality of the graphene FETs and examined the variation of electrical resistance in the doped regime as a function of carrier density and temperature. Our results reveal strong device-dependent variability even in the most simple architecture that we attribute to competing momentum-conserving and momentum-relaxing scattering mechanisms, as well as coupling to contacts. Further, we have proposed a phenomenological method for analysing the results, which yields transport parameters in accordance with recent experiments. This simple experimental strategy and analysis can serve as an efficient tool for extracting the viscous electronic contribution in state-of-the-art high-mobility graphene FETs.

cond-mat.mes-hall↗
arXiv2026

Entropy spectroscopy of a bilayer graphene quantum dot

We measure the entropy change of charge transitions in an electrostatically defined quantum dot in bilayer graphene. Entropy provides insights into the equilibrium thermodynamic properties of both ground and excited states beyond transport measurements. For the one-carrier regime, the obtained entropy shows that the ground state has a two-fold degeneracy lifted by an out-of-plane magnetic field. This observation is in agreement with previous direct transport measurements and confirms the applicability of this novel method. For the two-carrier regime, the extracted entropy indicates a non-degenerate ground state at zero magnetic field, contrary to previous studies suggesting a three-fold degeneracy. We attribute the degeneracy lifting to the effect of Kane-Mele type spin--orbit interaction on the two-carrier ground state, which has not been observed before. Our work demonstrates the validity and efficacy of entropy measurements as a unique, supplementary experimental tool to investigate the degeneracy of the ground state in quantum devices build in materials such as graphene. This technique, applied to exotic systems with fractional ground state entropies, will be a powerful tool in the study of quantum matter.

cond-mat.mes-hall↗
arXiv2026

Dynamic twisting and imaging of moiré crystals

Moiré superlattices in stacked 2D crystals are powerful platforms for engineering correlated and topological quantum phases, with twisted graphene and transition metal dichalcogenides (TMDs) as prominent examples. Their angle-sensitive band structures enable rich tunability; however, conventional tear-and-stack methods fix the angle at assembly, limiting systematic exploration of angle-dependent phenomena. Here, we present a scanning-probe-based manipulation scheme that enables in situ, continuous post-fabrication twist control using nanostructured metal rotors. We demonstrate reproducible angle tuning and direct moiré imaging across three platforms: graphene, hBN, and encapsulated, air-sensitive MoTe2. Quantitative piezoresponse force microscopy (PFM) analysis confirms sub-degree precision with minimal induced heterostrain, preserving sample quality even in the marginally twisted regime. Crucially, the device architecture maintains open access to the active region, allowing optical, scanning-probe, and transport measurements. This work enables single-device mapping of the angular phase diagram of moiré materials, including the twisted TMD homobilayers.

cond-mat.mes-hall↗
arXiv2026

Hydrostatic Pressure-enhanced correlated magnetism and Chern insulator in moir'e WSe2

Moiré semiconductors offer flat bands where Coulomb interactions and band topology intertwine, while interlayer coupling plays a central role in forming the moiré potential. However, limited interlayer coupling strength and the lack of efficient tuning methods hinder further exploration of correlated phenomena in moiré semiconductors. Here we introduce a cryogenic dual-gated diamond-anvil platform using helium as a pressure medium, enabling reversible hydrostatic tuning together with magneto-optical spectroscopy in twisted bilayer WSe2. Pressure enhances the moiré potential, redshifts excitons, and stabilizes Stoner ferromagnetism otherwise absent at a 3.1-degree twist. Simultaneously, the half-filled C = 1 Chern insulating state strengthens, exhibiting a reduced saturation field. Moreover, we observe a topological phase transition from a Chern insulator to a Mott insulator at around 2 GPa. First-principles calculations reveal that a Gamma-to-K valence-band-maximum switching drives this transition by converting an Ising-like topological K-valley miniband into a spin-degenerate trivial Gamma miniband. Our findings demonstrate hydrostatic pressure as a powerful, continuous control axis for correlated magnetism and topological band engineering in moiré materials.

cond-mat.mtrl-sci↗
arXiv2026

Electric-field-tuned consecutive topological phase transitions between distinct correlated insulators in moire MoTe2/WSe2 heterobilayer

Consecutive topological phase transitions (TPTs) between strongly correlated electronic phases that differ simultaneously in symmetry breaking and topological order are of fundamental interest in condensed matter physics, yet are rarely realized experimentally. We report two consecutive electric-field-driven TPTs at half filling (nu = 1) in angle-aligned MoTe2/WSe2 moire heterobilayers. With increasing out-of-plane displacement field, a geometrically frustrated Mott insulator evolves into a ferromagnetic quantum anomalous Hall (QAH) Mott insulator, i.e., a spin-polarized topological Mott insulator without an observable charge-gap closure, and subsequently into an antiferromagnetic, valley-coherent Mott insulator (VC-AFM) accompanied by a continuous charge-gap collapse and the emergence of a critical metallic state. Layer-resolved magnetic circular dichroism (MCD), magneto-transport, and compressibility measurements jointly determine the phase diagram. The high-field evolution of the antiferromagnetic state reveals a metamagnetic-like transition at a critical field B*, above which a Chern insulating transport response reappears. Our results establish the MoTe2/WSe2 moire platform as a tunable realization of an extended Kane-Mele-Hubbard model hosting sequential correlation-topology-intertwined transitions.

cond-mat.str-el↗
arXiv2026

Surface defects in carbon-doped hexagonal boron nitride for negative-contrast direct laser writing

Radiative defects in hexagonal boron nitride (hBN) are active in a broad spectral range from deep ultraviolet to near-infrared wavelengths. Representatives of these defects act as bright single photon sources, spin-1 systems, and multiproperty atomic-scale sensors. They are predominantly investigated in bulk hBN films, where defects are decoupled from surface and interfacial effects. Here, we demonstrate a novel class of surface defects optically active in the green/yellow visible spectral range, which exhibit photophysical properties distinct from their bulk counterparts. High-power resonant laser illumination quenched the emission from the ensemble of such defects, which was attributed to a light-driven structural reconfiguration. The quenched defects were found to recover their emissive capabilities via a thermal cycling process, revealing an activation energy of 24.5 meV for the structural transition. Alternatively, permanent quenching of the defects was triggered by surface chemistry, involving lithiation-enabled attachment of functional groups. These mechanisms were utilized to realize negative-contrast direct laser writing, designing arbitrary geometric emissive patterns on demand in a microscopic configuration. The surface-active radiative centers in hBN appear particularly attractive for exploring environmental sensitivity, surface science, and coupling to photonic structures or electronic devices by taking unique advantage of the two-dimensional characteristics of the host lattice.

physics.optics↗
arXiv2026

Polariton-mediated binding of anti-aligned dipolar excitons

Interacting bosonic quasiparticles are the cornerstone for exploring many-body physics and nonlinear quantum phenomena in correlated light-matter systems. Strongly interacting dipolar excitons in van der Waals heterostructures have attracted significant interest due to their out-of-plane electric dipole moments and high tunability via the quantum-confined Stark effect (QCSE). However, leveraging these tunable dipolar excitons in strongly coupled exciton-photon systems to explore exotic many-body physics and macroscopic quantum phenomena remains experimentally elusive. Here, we report the strong coupling of dipolar excitons in a gated bilayer MoS2 device integrated with a one-dimensional photonic crystal hosting bound-states-in-continuum (BIC). The resulting polaritons hybridize cavity photons with a coherent superposition of two electrically tunable anti-aligned dipolar excitons, effectively binding them into composite quasiparticle states. By tuning the dipolar excitons into non-degenerate states via the QCSE, we realize in situ reconfiguration of the polariton wavefunction and observe an emergent polariton branch exhibiting non-monotonic Stark shifts. Notably, these tunable polaritons allow for customized control over nonlinear interactions through distinct excitonic hybridization and dipolar configurations. This in situ tunability offers a scalable pathway toward electrically programmable quantum fluids of light and correlated polariton phases in on-chip photonic integrated circuits.

physics.optics↗
arXiv2026

Ferroelectric Quantum Point Contact in Twisted Transition Metal Dichalcogenides

In twisted transition metal dichalcogenides (tTMDs), atomic reconstruction gives rise to moiré domains with alternating ferroelectric polarization, whose domain size and overall electric dipole moment are tunable by an out-of-plane electric field. Previous transport measurements in Hall bar devices have successfully demonstrated the overall ferroelectric behavior of tTMDs from a collective ensemble of ferroelectric moiré domains. To locally probe a single ferroelectric moiré domain, we fabricate and study mesoscopic quantum transport via a gate-defined twisted molybdenum disulfide (tMoS2) quantum point contact (QPC). The local property of a single moiré domain is invulnerable to long-range disorder and twist-angle inhomogeneity, resulting in an unusually long conductance plateau with large electrical hysteresis. The comparison between local and global measurements confirms that antiferroelectricity can emerge from alternating polarization of individual ferroelectric domains. Using a QPC as a single charge sensor, we characterize the nature and time scale of different domain evolution mechanisms with single atomic dipole resolution. Our findings shed new light on the microscopic ferroelectric behavior and dynamics within a single tTMD moiré domain, paving the way toward more advanced ferroelectric quantum devices with tunable local Hamiltonian, such as ferroelectric tTMD quantum dots (QDs).

cond-mat.mes-hall↗
arXiv2026

Ferroelectric switching of interfacial dipoles in $α$-RuCl$_3$/graphene heterostructure

We demonstrate electrically switchable, non-volatile dipoles in graphene/thin hBN/$α$-RuCl$_3$ heterostructures, stabilized purely by interfacial charge transfer across an atomically thin dielectric barrier. This mechanism requires no sliding or twisting to explicitly break inversion symmetry and produces robust ferroelectric-like hysteresis loops that emerge prominently near 30~K. Systematic measurements under strong in-plane and out-of-plane magnetic fields reveal negligible effects on the hysteresis characteristics, confirming that the primary mechanism driving the dipole switching is electrostatic. Our findings establish a distinct and robust route to electrically tunable ferroelectric phenomena in van der Waals heterostructures, opening opportunities to explore the interplay between interfacial charge transfer and temperature-tuned barrier crossing of dipole states at the atomic scale.

cond-mat.mtrl-sci↗