arXiv subjects

Kenji Watanabe

Publications and source records attributed to Kenji Watanabe.

At least 631 records · Page 35Linked to original sources

arXiv2024

Electrically pumped h-BN single-photon emission in van der Waals heterostructure

Atomic defects in solids offer a versatile basis to study and realize quantum phenomena and information science in various integrated systems. All-electrical pumping of single defects to create quantum light emission has been realized in several platforms including color centers in diamond and silicon carbide, which could lead to the circuit network of electrically triggered single-photon sources. However, a wide conduction channel which reduces the carrier injection per defect site has been a major obstacle. Here, we realize a device concept to construct electrically pumped single-photon emission using a van der Waals stacked structure with atomic plane precision. Defect-induced tunneling currents across graphene and NbSe2 electrodes sandwiching an atomically thin h-BN layer allow robust and persistent generation of non-classical light from h-BN. The collected emission photon energies range between 1.4 and 2.9 eV, revealing the electrical excitation of a variety of atomic defects. By analyzing the dipole axis of observed emitters, we further confirm that emitters are crystallographic defect structures of h-BN crystal. Our work facilitates implementing efficient and miniaturized single-photon devices in van der Waals platforms toward applications in quantum optoelectronics.

quant-ph↗

arXiv2024

Magnetic Hofstadter cascade in a twisted semiconductor homobilayer

Transition metal dichalcogenide moiré homobilayers have emerged as a platform in which magnetism, strong correlations, and topology are intertwined. In a large magnetic field, the energetic alignment of states with different spin in these systems is dictated by both strong Zeeman splitting and the structure of the Hofstadter's butterfly spectrum, yet the latter has been difficult to probe experimentally. Here we conduct local thermodynamic measurements of twisted WSe$_2$ homobilayers that reveal a cascade of magnetic phase transitions. We understand these transitions as the filling of individual Hofstadter subbands, allowing us to extract the structure and connectivity of the Hofstadter spectrum of a single spin. The onset of magnetic transitions is independent of twist angle, indicating that the exchange interactions of the component layers are only weakly modified by the moiré potential. In contrast, the magnetic transitions are associated with stark changes in the insulating states at commensurate filling. Our work achieves a spin-resolved measurement of Hofstadter's butterfly despite overlapping states, and it disentangles the role of material and moiré effects on the nature of the correlated ground states.

cond-mat.mes-hall↗

arXiv2024

Enhanced Polarizability and Tunable Diamagnetic Shifts from Charged Localized Emitters in WSe2 on a Relaxor Ferroelectric

Strain modulation is a crucial way in engineering nanoscale materials. It is even more important for single photon emitters in layered materials, where strain can create quantum emitters and control their energies. Here we report the localized, charge-enhanced coupling between the charged localized emitters in monolayer tungsten diselenide (WSe2) to the piezoelectric relaxor ferroelectric substrate. In addition to the strain effect, we observe a gigantic polarizability volume with the enhancement factor up to 1010. The enormous polarizability leads to a large Quantum-confined Stark shift under a small variation of electric field, indicating the potential of integrating layered materials with functional substrates for quantum sensing. We further demonstrate the tunable diamagnetic shift and g-factor with strain varying by ~0.05%, which confirms the existence of enhanced interaction between the localized oscillating dipoles and the ferroelectric domains. Our results signify the prospect of charged quantum emitters in layered materials for quantum sciences and technology.

cond-mat.mes-hall↗

arXiv2024

Competing Orbital Magnetism and Superconductivity in electrostatically defined Josephson Junctions of Alternating Twisted Trilayer Graphene

The coexistence of superconductivity and magnetism within a single material system represents a long-standing goal in condensed matter physics. Van der Waals-based moiré superlattices provide an exceptional platform for exploring competing and coexisting broken symmetry states. Alternating twisted trilayer graphene (TTG) exhibits robust superconductivity at the magic angle of 1.57° and 1.3°, with suppression at intermediate twist angles. In this study, we investigate the intermediate regime and uncover evidence of orbital magnetism. As previously reported, superconductivity is suppressed near the charge neutrality point (CNP) and emerges at larger moiré fillings. Conversely, we find orbital magnetism most substantial near the CNP, diminishing as superconductivity develops. This complementary behavior is similarly observed in the displacement field phase space, highlighting a competitive interplay between the two phases. Utilizing gate-defined Josephson junctions, we probe orbital magnetism by electrostatically tuning the weak links into the magnetic phase, revealing an asymmetric Fraunhofer interference pattern. The estimated orbital ferromagnetic ordering temperature is approximately half the superconducting critical temperature, coinciding with the onset of Fraunhofer asymmetry. Our findings suggest that the observed orbital magnetism is driven by valley polarization and is distinct from the anomalous Hall effect reported at integer fillings in twisted graphene systems. These results offer insights into the interplay between superconductivity and magnetism in moiré superlattices.

cond-mat.str-el↗

arXiv2024

Aharonov-Bohm Interference in Even-Denominator Fractional Quantum Hall States

Position exchange of non-Abelian anyons affects the quantum state of their system in a topologically-protected way. Their expected manifestations in even-denominator fractional quantum Hall (FQH) systems offer the opportunity to directly study their unique statistical properties in interference experiments. In this work, we present the observation of coherent Aharonov-Bohm interference at two even-denominator states in high-mobility bilayer graphene-based van der Waals heterostructures by employing the Fabry-Pérot interferometry (FPI) technique. Operating the interferometer at a constant filling factor, we observe an oscillation period corresponding to two flux quanta inside the interference loop, $ΔΦ=2Φ_0$, at which the interference does not carry signatures of non-Abelian statistics. The absence of the expected periodicity of $ΔΦ=4Φ_0$ may indicate that the interfering quasiparticles carry the charge $e^* = \frac{1}{2}e$ or that interference of $e^* = \frac{1}{4}e$ quasiparticles is thermally smeared. Interestingly, at two hole-conjugate states, we also observe oscillation periods of half the expected value, indicating interference of $e^* = \frac{2}{3}e$ quasiparticles instead of $e^* = \frac{1}{3}e$. To probe statistical phase contributions, we operated the FPI with controlled deviations of the filling factor, thereby introducing fractional quasiparticles inside the interference loop. The resulting changes to the interference patterns at both half-filled states indicate that the additional bulk quasiparticles carry the fundamental charge $e^*=\frac{1}{4}e$, as expected for non-Abelian anyons.

cond-mat.mes-hall↗

arXiv2024

Unusual topological polar texture in moiré ferroelectrics

Topological polar textures in ferroelectrics have attracted significant interest for their potential for energy-efficient and high-density data storage and processing. Among these, polar merons and antimerons are predicted in strained and twisted bilayers of inversion symmetry broken systems. However, experimental observation of these polar textures within twisted two-dimensional van der Waals (2D vdW) materials remains challenging. Here, we utilize vector piezoresponse force microscopy (PFM) to reconstruct the polarization fields in R-type marginally twisted hexagonal boron nitride (hBN). We observe alternating out-of-plane (OOP) polarizations at domain regions and in-plane (IP) vortex-like polarization patterns along domain walls (DWs), indicative of a network of polar merons and antimerons. Notably, the OOP polarization exhibits three polarity reversals across a DW. Similar polar textures are identified in marginally twisted MoSe2 and WSe2 homobilayers. Our theoretical simulations attribute these unusual polarization reversals near the DWs to the competition between moiré ferroelectricity and piezoelectricity. These results provide experimental evidence of complex polar textures in moiré ferroelectrics, offering new insights into the electronic band topology in twisted transition metal dichalcogenides (TMDCs).

cond-mat.mtrl-sci↗

arXiv2024

Nanosecond nanothermometry in an electron microscope

Thermal transport in nanostructures plays a critical role in modern technologies. As devices shrink, techniques that can measure thermal properties at nanometer and nanosecond scales are increasingly needed to capture transient, out-of-equilibrium phenomena. We present a novel pump-probe photon-electron method within a scanning transmission electron microscope (STEM) to map temperature dynamics with unprecedented spatial and temporal resolutions. By combining focused laser-induced heating and synchronized time-resolved monochromated electron energy loss spectroscopy (EELS), we track phonon, exciton and plasmon signals in various materials, including silicon nitride, aluminum thin film, and transition metal dichalcogenides. Our results demonstrate the technique's ability to follow temperature changes at the nanometer and nanosecond scales. The experimental data closely matched theoretical heat diffusion models, confirming the method's validity. This approach opens new opportunities to investigate transient thermal phenomena in nanoscale materials, offering valuable insights for applications in thermoelectric devices and nanoelectronics.

cond-mat.mtrl-sci↗

arXiv2024

Optical detection of the sliding ferroelectric switching in hBN with a WSe2 monolayer

When two BN layers are stacked in parallel in an AB or BA arrangement, a spontaneous out-of-plane electric polarization arises due to charge transfer in the out-of-plane B-N bonds. The ferroelectric switching from AB to BA (or BA to AB) can be achieved with a relatively small out-of-plane electric field through the in-plane sliding of one atomic layer over the other. However, the optical detection of such ferroelectric switching in hBN has not yet been demonstrated. In this study, we utilize an adjacent WSe2 monolayer to detect the ferroelectric switching in BN. This dynamic coupling between a 2D ferroelectric and a 2D semiconductor allows for the fundamental investigation of the ferroelectric material using a non-destructive, local optical probe, offering promising applications for compact and non-volatile memory devices.

cond-mat.mtrl-sci↗

arXiv2024

Ferromagnetism and Topology of the Higher Flat Band in a Fractional Chern Insulator

The recent observation of the fractional quantum anomalous Hall effect in moiré fractional Chern insulators provides an opportunity to investigate zero magnetic field anyons. To potentially realize non-Abelian anyons, one approach is to engineer higher flat Chern bands that mimic higher Landau levels. Here, we investigate the interaction, topology, and ferromagnetism of the second moiré miniband in twisted MoTe2 bilayers. At half filling of the second miniband, we observe spontaneous ferromagnetism and an incipient Chern insulator state. The Chern numbers of the top two moiré flat bands exhibit opposite signs for twist angles above 3.1°, but share the same sign near 2.6°, consistent with theoretical predictions. In the 2.6° device, increasing magnetic field induces a topological phase transition via band crossing between opposite valleys, resulting in an emergent state with Chern number C = -2. Additionally, an insulating state at half filling of the second valley-polarized band suggests a charge-ordered state is favored over the fractional Chern insulator state. These findings lay a foundation for understanding the higher flat Chern bands, crucial for the discovery of non-Abelian fractional Chern insulators.

cond-mat.mes-hall↗

arXiv2024

Field-Resilient Supercurrent Diode in a Multiferroic Josephson Junction

The research on supercurrent diodes has surged rapidly due to their potential applications in electronic circuits at cryogenic temperatures. To unlock this functionality, it is essential to find supercurrent diodes that can work consistently at zero magnetic field and under ubiquitous stray fields generated in electronic circuits. However, a supercurrent diode with robust field tolerance is currently lacking. Here, we demonstrate a field-resilient supercurrent diode by incorporating a multiferroic material into a Josephson junction. We first observed a pronounced supercurrent diode effect at zero magnetic field. More importantly, the supercurrent rectification persists over a wide and bipolar magnetic field range beyond industrial standards for field tolerance. By theoretically modeling a multiferroic Josephson junction, we unveil that the interplay between spin-orbit coupling and multiferroicity underlies the unusual field resilience of the observed diode effect. This work introduces multiferroic Josephson junctions as a new field-resilient superconducting device for cryogenic electronics.

cond-mat.supr-con↗

arXiv2024

Switchable Chern insulator, isospin competitions and charge density waves in rhombohedral graphene moire superlattices

Graphene-based moire superlattices provide a versatile platform for exploring novel correlated and topological electronic states, driven by enhanced Coulomb interactions within flat bands. The intrinsic tunability of graphene s multiple degrees of freedom enables precise control over these complex quantum phases. In this study, we observe a range of competing phases and their transitions in rhombohedrally stacked hexalayer graphene on hexagonal boron nitride (r-6G/hBN) moire superlattices. When electrons are polarized away from the moire superlattice, we firstly identify a Chern insulator with reversible Chern numbers at v = 1 (one electron per moire cell), attributed to the competition between bulk and edge magnetizations.Then, we detect transitions between three distinct insulating states at v = 2, driven by vertical displacement field D and vertical magnetic field B. These insulating phases are distinguished as spin-antiferromagnetic, spin-polarized, and valley-polarized insulators, based on their responses to parallel and perpendicular magnetic fields. When electrons are polarized toward the moire superlattice, in a device with large twist angle, insulating states appear at v = 1/3 and 2/3 at zero magnetic field, and v = 1/2 in a magnetic field. Our findings reveal a rich interplay of charge, isospin, topology and magnetic field in rhombohedral graphene moire superlattices.

cond-mat.str-el↗

arXiv2024

Large trion binding energy in monolayer WS$_2$ via strain-enhanced electron-phonon coupling

Transition metal dichalcogenides and related layered materials in their monolayer and a few layers thicknesses regime provide a promising optoelectronic platform for exploring the excitonic- and many-body physics. Strain engineering has emerged as a potent technique for tuning the excitonic properties favorable for exciton-based devices. We have investigated the effects of nanoparticle-induced local strain on the optical properties of exciton, $X^0$, and trion, $X^\text{-}$, in monolayer WS$_2$. Biaxial tensile strain up to 2.0% was quantified and verified by monitoring the changes in three prominent Raman modes of WS$_2$: E${^1_{2g}}$($Γ$), A$_{1g}$, and 2LA(M). We obtained a remarkable increase of 34 meV in $X^\text{-}$ binding energy with an average tuning rate of 17.5 $\pm$ 2.5 meV/% strain across all the samples irrespective of the surrounding dielectric environment of monolayer WS$_2$ and the sample preparation conditions. At the highest tensile strain of $\approx$2%, we have achieved the largest binding energy $\approx$100 meV for $X^\text{-}$, leading to its enhanced emission intensity and thermal stability. By investigating strain-induced linewidth broadening and deformation potentials of both $X^0$ and $X^\text{-}$ emission, we elucidate that the increase in $X^\text{-}$ binding energy is due to strain-enhanced electron-phonon coupling. This work holds relevance for future $X^\text{-}$-based nano-opto-electro-mechanical systems and devices.

cond-mat.mes-hall↗

arXiv2024

Light-Induced Electron Pairing in a Bilayer Structure

Previous experimental and theoretical work has given evidence of the existence of doubly charged exciton states in strongly screened bilayers of transition metal dichalcogenide (TMD) layers. These complexes are important because they are performed electron pairs that can, in principle, undergo Bose-Einstein condensation (BEC), in which case they would also form a new type of superconductor, consisting of stable bosons with net charges. In this paper, we present key electrostatic and magnetic measurements that definitively confirm the existence of these charged bosons. These measurements include 1) continuous control of the doping density with both positive and negative carriers, showing the expected population dependencies on the free carrier density, and 2) measurement of the dependence on the magnetic field, showing that this new bound state is a spin triplet. These results imply that it is promising to look for BEC and superconductivity in this system.

cond-mat.supr-con↗

arXiv2024

Observation of 1/3 fractional quantum Hall physics in balanced large angle twisted bilayer graphene

Magnetotransport of conventional semiconductor based double layer systems with barrier suppressed interlayer tunneling has been a rewarding subject due to the emergence of an interlayer coherent state that behaves as an excitonic superfluid. Large angle twisted bilayer graphene offers unprecedented strong interlayer Coulomb interaction, since both layer thickness and layer spacing are of atomic scale and a barrier is no more needed as the twist induced momentum mismatch suppresses tunneling. The extra valley degree of freedom also adds richness. Here we report the observation of fractional quantum Hall physics at 1/3 total filling for balanced layer population in this system. Monte Carlo simulations support that the ground state is also an excitonic superfluid but the excitons are composed of fractional rather than elementary charges. The observed phase transitions with an applied displacement field at this and other fractional fillings are also addressed with simulations. They reveal ground states with different topology and symmetry properties.

cond-mat.mes-hall↗

arXiv2024

Strong Inter-valley Electron-Phonon Coupling in Magic-Angle Twisted Bilayer Graphene

The unusual properties of superconductivity in magic-angle twisted bilayer graphene (MATBG) have sparked enormous research interest. However, despite the dedication of intensive experimental efforts and the proposal of several possible pairing mechanisms, the origin of its superconductivity remains elusive. Here, utilizing angle-resolved photoemission spectroscopy with micrometer spatial resolution, we have revealed flat band replicas in superconducting MATBG, where MATBG is unaligned with its hexagonal boron nitride (hBN) substrate11. These replicas exhibit uniform energy spacing, approximately 150 +- 15 meV apart, indicative of strong electron-boson coupling. Strikingly, these replicas are absent in non-superconducting twisted bilayer graphene (TBG) systems, either when MATBG is aligned to hBN or when TBG deviates from the magic angle. Calculations suggest that the formation of these flat band replicas in superconducting MATBG are attributed to the strong coupling between flat band electrons and an optical phonon mode at the graphene K point, facilitated by inter-valley scattering. These findings, although do not necessarily put electron phonon coupling as the main driving force for the superconductivity in MATBG, unravel the unique electronic structure inherent in superconducting MATBG, thereby providing crucial information for understanding the unusual electronic landscape from which the superconductivity is derived.

cond-mat.mes-hall↗

arXiv2024

Electron transport in bilayer graphene nano constrictions patterned using AFM nanolithography

Here we report on low temperature transport measurements of encapsulated bilayer graphene nano constrictions fabricated employing electrode-free AFM-based local anodic oxidation (LAO) nanolithography. This technique allows for the creation of constrictions as narrow as 20 nm much smaller than previous studies. In wider constrictions, we observe bulk transport characteristics. However, as the constriction's width is reduced, a transport gap appears. Single quantum dot (QD) formation is observed within the narrowest constriction with addition energies exceeding 100 meV, which surpass previous experiments on patterned QDs. Our results suggest that transport through these narrow constrictions is governed by edge disorder combined with quantum confinement effects. Our findings introduce electrode-free AFM-LAO lithography as an easy and flexible method for creating nanostructures with tunable electronic properties without relying on patterning techniques such as e-beam lithography. The excellent control and reproducibility provided by this technique opens exciting opportunities for carbon-based quantum electronics and spintronics.

cond-mat.mes-hall↗

arXiv2024

Moiré Periodic and Quasiperiodic Crystals in Heterostructures of Twisted Bilayer Graphene and Hexagonal Boron Nitride

Stacking two atomic crystals with a twist between their crystal axes produces moiré potentials that modify the electronic properties. Here we show that double moiré potentials generated by superposing three atomic crystals create a new class of tunable quasiperiodic structures that alter the symmetry and spatial distribution of the electronic wavefunctions. By using scanning tunneling microscopy and spectroscopy to study twisted bilayer graphene on hexagonal boron nitride (hBN), we unveil a moiré phase diagram defined by the lattice constants of the two moiré lattices (graphene-on-graphene and graphene-on-hBN), comprising both commensurate periodic and incommensurate quasiperiodic crystals. Remarkably, the 1:1 commensurate crystal, which should theoretically exist at only one point on this phase diagram, is observed over a wide range, demonstrating an unexpected self-alignment mechanism. The incommensurate crystals include quasicrystals, which are quasiperiodic and feature a Bravais-forbidden dodecagonal symmetry, and intercrystals, which are also quasiperiodic but lack forbidden symmetries. This rich variety of tunable double moiré structures offers a synthetic platform for exploring the unique electronic properties of quasiperiodic crystals, which are rarely found in nature.

cond-mat.mes-hall↗

arXiv2024

Gate-defined single-electron transistors in twisted bilayer graphene

Twisted bilayer graphene (tBLG) near the magic angle is a unique platform where the combination of topology and strong correlations gives rise to exotic electronic phases. These phases are gate-tunable and related to the presence of flat electronic bands, isolated by single-particle band gaps. This enables gate-controlled charge confinement, essential for the operation of single-electron transistors (SETs), and allows to explore the interplay of confinement, electron interactions, band renormalisation and the moiré superlattice, potentially revealing key paradigms of strong correlations. Here, we present gate-defined SETs in near-magic-angle tBLG with well-tunable Coulomb blockade resonances. These SETs allow to study magnetic field-induced quantum oscillations in the density of states of the source-drain reservoirs, providing insight into gate-tunable Fermi surfaces of tBLG. Comparison with tight-binding calculations highlights the importance of displacement-field-induced band renormalisation crucial for future advanced gate-tunable quantum devices and circuits in tBLG including e.g. quantum dots and Josephson junction arrays.

cond-mat.mes-hall↗