arXiv subjects

Kenji Watanabe

Publications and source records attributed to Kenji Watanabe.

At least 649 records · Page 36Linked to original sources

arXiv2024

Relativistic Mott transition in strongly correlated artificial graphene

The realization of graphene has provided a bench-top laboratory for quantum electrodynamics. The low-energy excitations of graphene are two-dimensional massless Dirac fermions with opposite chiralities at the $\pm$K valleys of the graphene Brillouin zone. It has been speculated that the electron-electron interactions in graphene could spontaneously break the chiral symmetry to induce a finite mass for Dirac fermions, in analogue to dynamical mass generation in elementary particles. The phenomenon is also known as the relativistic Mott transition and has not been observed in pristine graphene because the interaction strength is insufficient. Here, we report the realization of strongly correlated artificial graphene and the observation of the relativistic Mott transition in twisted WSe2 tetralayers. Using magneto transport, we show that the first $Γ$-valley moiré valence band mimics the low-energy graphene band structure. At half-band filling, the system exhibits hallmarks of massless Dirac fermions, including an anomalous Landau fan originated from a $π$-Berry phase and a square-root density dependence of the cyclotron mass. We tune the interaction across the semimetal-insulator transition by reducing the twist angle below about 2.7 degrees. The emergent insulator is compatible with an antiferromagnetic Mott insulator. Our results open the possibility of studying strongly correlated Dirac fermions in a condensed matter system.

cond-mat.mes-hall↗

arXiv2024

Crossover from Conventional to Unconventional Superconductivity in 2M-WS2

Leveraging reciprocal-space proximity effect between superconducting bulk and topological surface states (TSSs) offers a promising way to topological superconductivity. However, elucidating the mutual influence of bulk and TSSs on topological superconductivity remains a challenge. Here, we report pioneering transport evidence of a thickness-dependent transition from conventional to unconventional superconductivity in 2M-phase WS2 (2M-WS2). As the sample thickness reduces, we see clear changes in key superconducting metrics, including critical temperature, critical current, and carrier density. Notably, while thick 2M-WS2 samples show conventional superconductivity, with an in-plane (IP) upper critical field constrained by the Pauli limit, samples under 20 nm exhibit a pronounced IP critical field enhancement, inversely correlated with 2D carrier density. This marks a distinct crossover to unconventional superconductivity with strong spin-orbit-parity coupling. Our findings underscore the crucial role of sample thickness in accessing topological states in 2D topological superconductors, offering pivotal insights into future studies of topological superconductivity.

cond-mat.mes-hall↗

arXiv2024

Real-space study of zero-field correlation in tetralayer rhombohedral graphene

Rhombohedral graphene (RG) has emerged as a promising platform for exploring exotic quantum phenomena, such as quantum magnetism, unconventional superconductivity, and fractional quantum anomalous Hall effects. Despite its potential, atomic-scale investigations of RG remain limited, hindering a detailed microscopic understanding of the origins of these correlated states. In this study, we employ scanning probe microscopy and spectroscopy to probe the intrinsic electronic states in trilayer and tetralayer RG. We identify a correlated insulating state with a 17 meV gap at the charge neutrality point in tetralayer RG, which is absent in the trilayer configuration. This gap is suppressed by applying a perpendicular magnetic field or doping the charge carrier density and does not exhibit inter-valley coherence patterns. We attribute this phenomenon to a symmetry-broken layer antiferromagnetic state, characterized by ferrimagnetic ordering in the outermost layers and antiferromagnetic coupling between them. To further investigate this magnetic correlated state, we conduct local scattering experiments. Within the correlated regime, a bound state emerges around a non-magnetic impurity but is absent near magnetic impurities, suggesting that non-magnetic doping induces a spin texture in the ferrimagnetic surface layers. Outside the correlated regime, Friedel oscillations are observed, allowing precise determination of the band dispersion in tetralayer RG. These findings provide atomic-scale evidences of zero-field correlations in RG and may be extended to study other exotic phases in RG.

cond-mat.mes-hall↗

arXiv2024

A quantized anomalous Hall effect above 4.2 K in stacked topological insulator/magnet bilayers

Quantized anomalous Hall effects (QAHEs) occur in remarkable electronic states which possess not only quantized Hall signals but in some cases regions of dissipationless electron transport. The initial demonstrations of a QAHE in a magnetically-doped topological insulator (TI) required temperatures below 100 mK, and since then a major focus of the field has been to increase the temperature scale. Here, we report quantized Hall signals up to 10 K (in what is known as the parity anomaly state) in TI/magnet bilayers made by mechanical assembly, rather than by conventional deposition techniques. This is a factor of 100 higher temperature than any previous realization of a QAHE in a proximity-coupled TI/magnet heterostructure made by deposition, and approximately twice the previous record for any QAHE system.

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arXiv2024

Quantized Landau-level crossing checkerboard in large-angle twisted graphene

When charge transport occurs under conditions like topological protection or ballistic motion, the conductance of low-dimensional systems often exhibits quantized values in units of $e^{2}/h$, where $e$ and $h$ are the elementary charge and Planck's constant. Such quantization has been pivotal in quantum metrology and computing. Here, we demonstrate a novel quantized quantity: the ratio of the displacement field to the magnetic field, $D/B$, in large-twist-angle bilayer graphene. In the high magnetic field limit, Landau level crossings between the top and bottom layers manifest equal-sized checkerboard patterns throughout the $D/B$-$ν$ space. It stems from a peculiar electric-field-driven interlayer charge transfer at one elementary charge per flux quantum, leading to quantized intervals of critical displacement fields, (i.e., $δD$ = $\frac{e}{2πl_{B}^{2}}$, where $l_B$ is the magnetic length). Our findings suggest that interlayer charge transfer in the quantum Hall regime can yield intriguing physical phenomena, which has been overlooked in the past.

cond-mat.mes-hall↗

arXiv2024

Interplay between topology and correlations in the second moiré band of twisted bilayer MoTe2

Topological flat bands formed in two-dimensional lattice systems offer unique opportunity to study the fractional phases of matter in the absence of an external magnetic field. Celebrated examples include fractional quantum anomalous Hall (FQAH) effects and fractional topological insulators. Recently, FQAH effects have been experimentally realized in both the twisted bilayer MoTe2 (tMoTe2) system and the rhombohedral stacked multilayer graphene/hBN moiré systems. To date, experimental studies mainly focus on the first moiré flat band, except a very recent work that studied novel transport properties in higher moiré bands of a 2.1° tMoTe2 device. Here, we present the systematical transport study of approximately 3° tMoTe2 devices, especially for the second moiré band. At ν = -2 and -4, time-reversal-symmetric single and double quantum spin Hall states formed, consistent with the previous observation in 2.1° tMoTe2 device. On the other hand, we observed ferromagnetism in the second moiré band, and a Chern insulator state driven by out-of-plane magnetic fields at ν = -3. At ν = -2.2 to -2.7, finite temperature resistivity minimum with 1/T scaling at low temperatures, and large out-of-plane negative magnetoresistance have been observed. Applying out-of-plane electric field can induce quantum phase transitions at both integer and fractional filling factors. Our studies pave the way for realizing tunable topological states and other unexpected magnetic phases beyond the first moiré flat band based on twisted MoTe2 platform.

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arXiv2024

Facilitating field-free perpendicular magnetization switching with a Berry curvature dipole in a Weyl semimetal

We report the synergy between orbital and spin-orbit torques in WTe2/Fe3GeTe2 heterostructures characterized by a Berry curvature dipole. By applying a current along the a axis in WTe2, we detect an out-of-plane magnetization in the system, which we attribute to nonequilibrium orbital magnetization linked to the Berry curvature dipole based on first-principles calculations, manifesting as the orbital Edelstein effect. This effect generates orbital torques that enable field-free perpendicular magnetization switching. Furthermore, by applying a relatively small current along the a axis and a pulsed current along the b axis in WTe2, we demonstrate controllable field-free magnetization switching of the adjacent Fe3GeTe2 layer, independently manipulating the orbital and spin-orbit torques. Our findings not only enhance the understanding of the collaborative dynamics between these torques but also suggest potential applications in magnetoresistive random-access memory.

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arXiv2024

Double-edged Role of Interactions in Superconducting Twisted Bilayer Graphene

For the unconventional superconducting phases in moire materials, a critical question is the role played by electronic interactions in the formation of Cooper pairs. In twisted bilayer graphene (tBLG), the strength of electronic interactions can be reduced by increasing the twist angle or screening provided by the dielectric medium. In this work, we place tBLG at 3-4 nm above bulk SrTiO3 substrates, which have a large yet tunable dielectric constant. By raising the dielectric constant in situ in a magic angle device, we observe suppression of both the height and the width of the entire superconducting dome, thus demonstrating that, unlike conventional superconductors, the pairing mechanism in tBLG is strongly dependent on electronic interactions. Interestingly, in contrast to the absence of superconductivity in devices on SiO2 with angle>1.3 deg, we observe a superconducting pocket in a large-angle (angle=1.4 deg) tBLG/STO device while the correlated insulating states are absent. These experimental results are in qualitative agreement with a theoretical model in which the pairing mechanism arises from Coulomb interactions that are screened by plasmons, electron-hole pairs, and longitudinal acoustic phonons. Our results highlight the unconventional nature of the superconductivity in tBLG, the double-edged role played by electronic interactions in its formation, as well as their complex interplay with the correlated insulating states.

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arXiv2024

Moire magnetism in CrBr3 multilayers emerging from differential strain

Interfaces between twisted 2D materials host a wealth of physical phenomena originating from the long-scale periodicity associated with the resulting moire structure. Besides twisting, an alternative route to create structures with comparably long or even longer periodicities is inducing a differential strain between adjacent layers in a van der Waals (vdW) material. Despite recent theoretical efforts analyzing its benefits, this route has not yet been implemented experimentally. Here we report evidence for the simultaneous presence of ferromagnetic and antiferromagnetic regions in CrBr3 _a hallmark of moire magnetism_ from the observation of an unexpected magnetoconductance in CrBr3 tunnel barriers with ferromagnetic Fe3GeTe2 and graphene electrodes. The observed magnetoconductance evolves with temperature and magnetic field as the magnetoconductance measured in small angle CrBr3 twisted junctions, in which moire magnetism occurs. Consistent with Raman measurements and theoretical modeling, we attribute the phenomenon to the presence of a differential strain in the CrBr3 multilayer, which locally modifies the stacking and the interlayer exchange between adjacent CrBr3 layers, resulting in spatially modulated spin textures. Our conclusions indicate that inducing differential strain in vdW multilayers is a viable strategy to create moire-like superlattices, which in the future may offer in-situ continuous tunability even at low temperatures.

cond-mat.mtrl-sci↗

arXiv2024

Built-in Bernal gap in large-angle-twisted monolayer-bilayer graphene

Atomically thin materials offer multiple opportunities for layer-by-layer control of their electronic properties. While monolayer graphene (MLG) is a zero-gap system, Bernal-stacked bilayer graphene (BLG) acquires a finite band gap when the symmetry between the layers' potential energy is broken, usually, via a displacement electric field applied in double-gate devices. Here, we introduce a twistronic stack comprising both MLG and BLG, synthesized via chemical vapor deposition, showing a Bernal gap in the absence of external fields. Although a large ($\sim30^{\circ}$) twist angle decouples the MLG and BLG electronic bands near Fermi level, proximity-induced energy shifts in the outermost layers result in a built-in asymmetry, which requires a displacement field of $0.14$ V/nm to be compensated. The latter corresponds to a $\sim10$ meV intrinsic BLG gap, a value confirmed by our thermal-activation measurements. The present results highlight the role of structural asymmetry and encapsulating environment, expanding the engineering toolbox for monolithically-grown graphene multilayers.

cond-mat.mes-hall↗

arXiv2024

Measurements of absolute bandgap deformation-potentials of optically-bright bilayer WSe$_2$

Bilayers of transition-metal dichalcogenides show many exciting features, including long-lived interlayer excitons and wide bandgap tunability using strain. Not many investigations on experimental determinations of deformation potentials relating changes in optoelectronic properties of bilayer WSe$_2$ with the strain are present in the literature. Our experimental study focuses on three widely investigated high-symmetry points, K$_{c}$, K$_{v}$, and Q$_{c}$, where subscript c (v) refers to the conduction (valence) band, in the Brillouin zone of bilayer WSe$_2$. Using local biaxial strains produced by nanoparticle stressors, a theoretical model, and by performing the spatially- and spectrally-resolved photoluminescence measurements, we determine absolute deformation potential of -5.10 $\pm$ 0.24 eV for Q$_{c}$-K$_{v}$ indirect bandgap and -8.50 $\pm$ 0.92 eV for K$_{c}$-K$_{v}$ direct bandgap of bilayer WSe$_2$. We also show that $\approx$0.9% biaxial tensile strain is required to convert an indirect bandgap bilayer WSe$_2$ into a direct bandgap semiconductor. Moreover, we also show that a relatively small amount of localized strain $\approx$0.4% is required to make a bilayer WSe$_2$ as optically bright as an unstrained monolayer WSe$_2$. The bandgap deformation potentials measured here will drive advances in flexible electronics, sensors, and optoelectronic- and quantum photonic- devices through precise strain engineering.

cond-mat.mes-hall↗

arXiv2024

Laterally Extended States of Interlayer Excitons in Reconstructed MoSe$_2$/WSe$_2$ Heterostructures

Heterostructures made from 2D transition-metal dichalcogenides are known as ideal platforms to explore excitonic phenomena ranging from correlated moiré excitons to degenerate interlayer exciton ensembles. So far, it is assumed that the atomic reconstruction appearing in some of the heterostructures gives rise to a dominating localization of the exciton states. We demonstrate that excitonic states in reconstructed MoSe$_2$/WSe$_2$ heterostructures can extend well beyond the moiré periodicity of the investigated heterostructures. The results are based on real-space calculations yielding a lateral potential map for interlayer excitons within the strain-relaxed heterostructures and corresponding real-space excitonic wavefunctions. We combine the theoretical results with cryogenic photoluminescence experiments, which support the computed level structure and relaxation characteristics of the interlayer excitons.

cond-mat.mes-hall↗

arXiv2024

Edge dependece of nonlocal transport in gapped bilayer graphene

The topological properties of gapped graphene have been explored for valleytronics applications. Prior transport experiments indicated their topological nature through large nonlocal resistance in Hall-bar devices, but the origin of this resistance was unclear. This study focused on dual-gate bilayer graphene (BLG) devices with naturally cleaved edges, examining how edge-etching with an oxygen plasma process affects electron transport. Before etching, local resistance at the charge neutral point increased exponentially with the displacement field and nonlocal resistance was well explained by ohmic contribution, which is typical of gapped BLG. After-etching, however, local resistance saturated with increasing displacement field, and nonlocal resistance deviated by three orders of magnitude from ohmic contribution. We suggest that these significant changes in local and nonlocal resistance arise from the formation of edge conducting pathways after the edge-etching, rather than from a topological property of gapped BLG that has been claimed in previous literatures.

cond-mat.mes-hall↗

arXiv2024

Emergent Symmetry and Valley Chern Insulator in Twisted Double-Bilayer Graphene

Theoretical calculations show that twisted double bilayer graphene (TDBG) under a transverse electric field develops a valley Chern number 2 at charge neutrality. Using thermodynamic and thermal activation measurements we report the experimental observation of a universal closing of the charge neutrality gap in the Hofstadter spectrum of TDBG at 1/2 magnetic flux per unit cell, in agreement with theoretical predictions for a valley Chern number 2 gap. Our theoretical analysis of the experimental data shows that the interaction energy, while larger than the flat-band bandwidth in TDBG near 1°does not alter the emergent valley symmetry or the single-particle band topology.

cond-mat.mes-hall↗

arXiv2024

Independently Tunable Flat Bands and Correlations in a Graphene Double Moiré System

We report on a double moiré system consisting of four graphene layers, where the top and bottom pairs form small-twist-angle bilayer graphene, and the middle interface has a large rotational mismatch. This system shows clear signatures of two sets of spatially separated flat bands associated with the top and bottom twisted bilayer graphene (TBG) subsystems, each independently tunable. Thermodynamic analysis reveals weak correlations between layers that allow the chemical potential to be measured as a function of carrier density for each constituent TBG. We find that correlated insulating states at integer number of electrons per moiré unit cell are most robust near magic angle, whereas gapped states at neutrality are more robust at larger twist angles.

cond-mat.mes-hall↗

arXiv2024

Engineering superconducting contacts transparent to a bipolar graphene

Graphene's exceptional electronic mobility, gate-tunability, and contact transparency with superconducting materials make it ideal for exploring the superconducting proximity effect. However, the work function difference between graphene and superconductors causes unavoidable doping of graphene near contacts, forming a p-n junction in the hole-doped regime and reducing contact transparency. This challenges the device implementation that exploits graphene's bipolarity. To address this limitation, we developed a new fabrication scheme for two-dimensional superconducting contacts that allows independent control over charge concentration and polarity for both the graphene in contact with superconductors and the graphene channel. Contact transparency, conductance enhancement, and Josephson coupling were measured to confirm transparent contacts to both polarities of graphene. Moreover, we demonstrated the Andreev process in the quantum Hall edge state at a negative filling factor of ν = -2. This scheme will open avenues for realizing various theoretical propositions utilizing the bipolarity of graphene combined with superconductivity.

cond-mat.mes-hall↗

arXiv2024

Glassy Relaxation Dynamics in the Two-Dimensional Heavy Fermion Antiferromagnet CeSiI

The recent discovery of the van der Waals (vdW) layered heavy fermion antiferromagnetic metal CeSiI offers promising potential for achieving accessible quantum criticality in the two-dimensional (2D) limit. CeSiI exhibits both heavy fermion behavior and antiferromagnetic (AFM) ordering, while the exact magnetic structure and phase diagram have yet to be determined. Here, we investigate magnetic properties of atomically thin CeSiI devices with thicknesses ranging from 2-15 vdW layers. The thickness-dependent magnetotransport measurement reveals an intrinsic 2D nature of heavy fermion behavior and antiferromagnetism. Notably, we also find an isotropic, time-dependent hysteresis in both magnetoresistance and Hall resistance, showing glassy relaxation dynamics. This glassy behavior in magnetic structures may suggest the presence of spin glass phases or multipolar ordering, further establishing CeSiI as an intriguing material system for investigating the interplay between magnetic orders and the Kondo effect.

cond-mat.str-el↗

arXiv2024

Hybrid Frenkel-Wannier excitons facilitate ultrafast energy transfer at a 2D-organic interface

Two-dimensional transition metal dichalcogenides (TMDs) and organic semiconductors (OSCs) have emerged as promising material platforms for next-generation optoelectronic devices. The combination of both is predicted to yield emergent properties while retaining the advantages of their individual components. In OSCs the optoelectronic response is typically dominated by localized Frenkel-type excitons, whereas TMDs host delocalized Wannier-type excitons. However, much less is known about the spatial and electronic characteristics of excitons at hybrid TMD/OSC interfaces, which ultimately determine the possible energy and charge transfer mechanisms across the 2D-organic interface. Here, we use ultrafast momentum microscopy and many-body perturbation theory to elucidate a hybrid exciton at an TMD/OSC interface that forms via the ultrafast resonant Förster energy transfer process. We show that this hybrid exciton has both Frenkel- and Wannier-type contributions: Concomitant intra- and interlayer electron-hole transitions within the OSC layer and across the TMD/OSC interface, respectively, give rise to an exciton wavefunction with mixed Frenkel-Wannier character. By combining theory and experiment, our work provides previously inaccessible insights into the nature of hybrid excitons at TMD/OSC interfaces. It thus paves the way to a fundamental understanding of charge and energy transfer processes across 2D-organic heterostructures.

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